JPH0530055B2 - - Google Patents

Info

Publication number
JPH0530055B2
JPH0530055B2 JP59033528A JP3352884A JPH0530055B2 JP H0530055 B2 JPH0530055 B2 JP H0530055B2 JP 59033528 A JP59033528 A JP 59033528A JP 3352884 A JP3352884 A JP 3352884A JP H0530055 B2 JPH0530055 B2 JP H0530055B2
Authority
JP
Japan
Prior art keywords
layer
silicide
silicon
melting point
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59033528A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60178642A (ja
Inventor
Yoshimi Shiotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3352884A priority Critical patent/JPS60178642A/ja
Publication of JPS60178642A publication Critical patent/JPS60178642A/ja
Publication of JPH0530055B2 publication Critical patent/JPH0530055B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP3352884A 1984-02-24 1984-02-24 半導体装置の製造方法 Granted JPS60178642A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3352884A JPS60178642A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3352884A JPS60178642A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60178642A JPS60178642A (ja) 1985-09-12
JPH0530055B2 true JPH0530055B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=12389045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3352884A Granted JPS60178642A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60178642A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6315418A (ja) * 1986-07-08 1988-01-22 Fujitsu Ltd 半導体装置の製造方法
US4737474A (en) * 1986-11-17 1988-04-12 Spectrum Cvd, Inc. Silicide to silicon bonding process
JPS63260052A (ja) * 1987-04-03 1988-10-27 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698872A (en) * 1980-01-07 1981-08-08 Nec Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS60178642A (ja) 1985-09-12

Similar Documents

Publication Publication Date Title
JP7721439B2 (ja) タングステン用モリブデンテンプレート
CN110731003B (zh) 含钼的低电阻率的膜
EP0070751B1 (en) Method for lpcvd co-deposition of metal and silicon to form metal silicide
US5252518A (en) Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane
US6399490B1 (en) Highly conformal titanium nitride deposition process for high aspect ratio structures
US6309713B1 (en) Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
EP0288754B1 (en) High rate tungsten cvd process for stress-free films
JPH0573254B2 (enrdf_load_stackoverflow)
JPH01172572A (ja) 基板上に超硬金属の層を付着させる方法及び装置
JPH0529317A (ja) シリコン半導体素子のタングステン窒化薄膜蒸着法及びこれを利用した二層構造の金属配線形成法
US6436820B1 (en) Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å
JPH08222569A (ja) 銅配線製造方法、半導体装置、及び銅配線製造装置
US4985371A (en) Process for making integrated-circuit device metallization
WO1998028783A1 (en) Method of nucleation used in semiconductor devices
US7033939B2 (en) Chemistry for chemical vapor deposition of titanium containing films
JPH0530055B2 (enrdf_load_stackoverflow)
JPH09260306A (ja) 薄膜形成方法
KR0161889B1 (ko) 반도체장치의 배선 형성방법
JPH0410219B2 (enrdf_load_stackoverflow)
KR100477813B1 (ko) 반도체장치의텅스텐금속배선형성방법
JPS59169129A (ja) 高融点金属あるいは高融点金属シリサイドの成膜方法
JPH10223556A (ja) 半導体装置の製造方法
JPS587821A (ja) 金属とシリコンとの化合物層の形成方法
KR19980060642A (ko) 타이타늄질화막 형성방법
KR100190076B1 (ko) 반도체 장치의 금속 배선층 형성 방법