JPH05299700A - Light emitting substrate - Google Patents
Light emitting substrateInfo
- Publication number
- JPH05299700A JPH05299700A JP4129955A JP12995592A JPH05299700A JP H05299700 A JPH05299700 A JP H05299700A JP 4129955 A JP4129955 A JP 4129955A JP 12995592 A JP12995592 A JP 12995592A JP H05299700 A JPH05299700 A JP H05299700A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light emitting
- pattern
- conductive
- conductive pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 239000011810 insulating material Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はLEDを実装した発光基
板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting substrate on which LEDs are mounted.
【0002】[0002]
【従来の技術】導電パターンを形成した基板上に、LE
Dチップを直にマウントしてなる発光基板が、小型化お
よび薄型化が可能であることから、小型機器類の表示用
として実用されている。2. Description of the Related Art LE is formed on a substrate on which a conductive pattern is formed.
A light emitting substrate in which a D chip is directly mounted can be miniaturized and thinned, and thus is practically used for display of small devices.
【0003】ところで、通常LEDチップを発光させる
に際しては、その電気回路中に順方向電流を制御するた
めの抵抗体を直列接続している。図4はこのような従来
の発光基板を示しており、絶縁基板7の表面に互いに独
立して導電パターン71,72,73を形成し、導電パ
ターン71,72間に電流制御のための抵抗体70を接
続し、導電パターン73上にLEDチップを載置すると
共にボンディングワイヤ31で導電パターン72と接続
してなり、導電パターン71,73間に電圧を印加して
LEDチップを発光させるものである。By the way, in order to normally emit light from an LED chip, a resistor for controlling a forward current is connected in series in its electric circuit. FIG. 4 shows such a conventional light emitting substrate, in which conductive patterns 71, 72, 73 are formed on the surface of the insulating substrate 7 independently of each other, and a resistor for current control is provided between the conductive patterns 71, 72. 70 is connected, the LED chip is placed on the conductive pattern 73, and the bonding wire 31 is connected to the conductive pattern 72. A voltage is applied between the conductive patterns 71 and 73 to cause the LED chip to emit light. ..
【0004】[0004]
【発明が解決しようとする課題】しかしながら上記の従
来構造では、抵抗体70を基板に載置させねばならない
分、余分なスペースが必要となり、発光基板のより小型
化を阻害することになる。さらに抵抗体70を実装(通
常はハンダ付け)するので製造の際に工数が増加して作
業性が悪いという問題があった。However, in the above-described conventional structure, since the resistor 70 has to be mounted on the substrate, an extra space is required, which hinders further miniaturization of the light emitting substrate. Further, since the resistor 70 is mounted (usually by soldering), there is a problem that man-hours increase during manufacturing and workability is poor.
【0005】従って本発明は、従来のように抵抗体の搭
載を不要とし、より小型化および薄型化が可能で、製造
も容易な発光基板を提供することを課題とする。Therefore, it is an object of the present invention to provide a light emitting substrate which does not require mounting of a resistor as in the prior art, can be made smaller and thinner, and can be easily manufactured.
【0006】[0006]
【課題を解決するための手段】本発明の発光基板は、互
いに独立した2つの導電パターンを表面に有する第1の
基板と、該第1の基板との接合面に抵抗パターンを有し
他面に導電パターンを有する第2の基板との貼合わせか
ら少なくとも構成される複合基板と、前記第1の基板の
いずれか一方の導電パターン上に載置されるLEDチッ
プとからなり、前記抵抗パターンと前記第1および第2
の基板の各導電パターンとは、それぞれの基板に設けた
スルーホールを介して電気接続されていることを特徴と
するものである。A light emitting substrate of the present invention has a first substrate having on its surface two conductive patterns independent of each other, and a resistance pattern on the bonding surface between the first substrate and the other surface. A composite substrate at least formed by laminating with a second substrate having a conductive pattern, and an LED chip mounted on one of the conductive patterns of the first substrate, and the resistance pattern The first and second
Each of the conductive patterns of the substrate is characterized in that it is electrically connected through a through hole provided in each substrate.
【0007】[0007]
【作用】本発明の発光基板においては、電流は、第1
の基板の導電パターンおよびスルーホール、抵抗パタ
ーン、第2の基板のスルーホールおよび導電パター
ン、という順に流れ、前記抵抗パターンにより順方向電
流が制御される。かかる発光基板によれば、LEDチッ
プを載置する複合基板内に、電流制御のための抵抗層を
組み込んだことになるので、従来のように抵抗体を基板
上に実装する必要はなく、発光基板の省スペース化に有
効である。In the light emitting substrate of the present invention, the current is the first
The conductive pattern and the through hole of the substrate, the resistance pattern, the through hole and the conductive pattern of the second substrate flow in this order, and the forward current is controlled by the resistance pattern. According to such a light emitting substrate, since the resistance layer for controlling the current is incorporated in the composite substrate on which the LED chip is mounted, it is not necessary to mount the resistor on the substrate as in the conventional case, It is effective in saving the board space.
【0008】[0008]
【実施例】以下図面に基づいて本発明の実施例を詳細に
説明する。図1は本発明の発光基板の一実施例を示す断
面図であり、図2はその斜視図を示している。図におい
て、互いに独立した2つの導電パターン11,12を表
面に有し、絶縁材料から形成された第1の基板10と、
同様に導電パターン21,22を有する第2の基板20
との貼合わせからなる複合基板1上にLEDチップが載
置されている。Embodiments of the present invention will now be described in detail with reference to the drawings. 1 is a sectional view showing an embodiment of a light emitting substrate of the present invention, and FIG. 2 is a perspective view thereof. In the figure, a first substrate 10 having two conductive patterns 11 and 12 independent of each other on the surface and formed of an insulating material;
Similarly, a second substrate 20 having conductive patterns 21 and 22
The LED chip is mounted on the composite substrate 1 which is formed by laminating with.
【0009】第2の基板20の、第1の基板10との接
合面側には抵抗パターンRが設けられており(第1の基
板10の裏面側に設けてももちろん良い)、該抵抗パタ
ーンRと、第1の基板10の導電パターン12とはスル
ーホールを介し、第2の基板20の導電パターン21と
はスルーホール23を介してそれぞれ電気的に接続され
ている。また14は、導電パターン14と導電パターン
22とを電気接続するためのスルーホールであり、必要
に応じて設けられる。該スルーホール14を設ければ、
複合基板1の裏側に位置する導電パターン21,22を
LEDチップ3への給電用電極とでき、給電リードを裏
面側に集中させ得る点で有利である。A resistance pattern R is provided on the bonding surface side of the second substrate 20 with the first substrate 10 (which may of course be provided on the back surface side of the first substrate 10). R and the conductive pattern 12 of the first substrate 10 are electrically connected through a through hole, and the conductive pattern 21 of the second substrate 20 is electrically connected through a through hole 23. Reference numeral 14 is a through hole for electrically connecting the conductive pattern 14 and the conductive pattern 22, and is provided as necessary. If the through hole 14 is provided,
This is advantageous in that the conductive patterns 21 and 22 located on the back side of the composite substrate 1 can be used as power supply electrodes for the LED chip 3, and the power supply leads can be concentrated on the back surface side.
【0010】前記の導電パターン12上には、LEDチ
ップ3が銀ペースト等を介して載置され、該LEDチッ
プ3の電極と他の導電パターン11とがボンディングワ
イヤ31により電気接続されている。そしてLEDチッ
プ3の周辺上には、保護並びにレンズ効果施与のため、
例えばエポキシ樹脂等の透光性樹脂モールド被覆4が施
されている。The LED chip 3 is placed on the conductive pattern 12 via a silver paste or the like, and the electrode of the LED chip 3 and another conductive pattern 11 are electrically connected by a bonding wire 31. And on the periphery of the LED chip 3, for protection and lens effect application,
For example, a translucent resin mold coating 4 such as an epoxy resin is applied.
【0011】かかる発光基板を駆動させるには、図2に
示すように第1の基板10の導電パターン11(導電パ
ターン22でも可)と、第2の基板20の導電パターン
21との間に、リード線51,52を介して電源5を接
続することによりLEDチップ3が発光する。この際、
上記の抵抗パターンRが、LEDチップの順方向電流を
制御する機能を果たすものである。In order to drive such a light emitting substrate, as shown in FIG. 2, between the conductive pattern 11 (which may be the conductive pattern 22) of the first substrate 10 and the conductive pattern 21 of the second substrate 20, The LED chip 3 emits light by connecting the power source 5 via the lead wires 51 and 52. On this occasion,
The resistance pattern R has a function of controlling the forward current of the LED chip.
【0012】上記の第1および第2の基板10,20の
材料としては、例えばセラミックスや耐熱性樹脂からな
る絶縁材料等を使用することができる。また導電ペース
トとしては、金、銀、銀−パラジウム、銀−白金ペース
トの塗布またはスクリーン印刷等で形成することができ
る。さらに抵抗パターンRとしては各種公知のものを使
用でき、例えば抵抗材料の塗布やスクリーン印刷、或い
はエッチング等で形成する方法が挙げられ、特に好まし
い形成手段として酸化ルテニウム等のペーストをスクリ
ーン印刷して形成する方法を例示することができる。As the material of the first and second substrates 10 and 20, for example, an insulating material such as ceramics or heat resistant resin can be used. The conductive paste can be formed by applying gold, silver, silver-palladium, silver-platinum paste, screen printing, or the like. Further, various known patterns can be used as the resistance pattern R, and examples thereof include a method of forming by applying a resistance material, screen printing, or etching, and as a particularly preferable forming means, a paste such as ruthenium oxide is formed by screen printing. The method of doing can be illustrated.
【0013】上記において、第1および第2の基板1
0,20からなる複合基板の厚さは0.2mm〜5mm程度
が適当であり、また導電パターンの厚さは10〜100
μm程度、抵抗パターンRの厚さは5〜20μm程度が
適当である。In the above, the first and second substrates 1
The suitable thickness of the composite substrate composed of 0 and 20 is about 0.2 mm to 5 mm, and the thickness of the conductive pattern is 10 to 100.
It is suitable that the resistance pattern R has a thickness of about 5 μm to about 20 μm.
【0014】本発明において好ましい複合基板1とし
て、低温焼成多層セラミック基板を挙げることができ
る。かかる材料であれば、酸化ルテニウムからなる抵抗
パターンなどを備えた単基板を多層化する際に、比較的
低温(500℃程度)での多層化が可能であり、抵抗パ
ターンを熱で劣化させる恐れがないので好ましい。さら
に複合基板1の形態は本実施例に限定されず、2枚以上
の多層基板としても良く、この場合はいずれかの基板に
抵抗パターンを設け、複合基板1の両面の導電パターン
と該抵抗パターンとを、複数の基板を貫通するスルーホ
ールでそれぞれ電気接続すれば良い。As a preferable composite substrate 1 in the present invention, a low temperature fired multilayer ceramic substrate can be cited. With such a material, when a single substrate having a resistance pattern made of ruthenium oxide or the like is formed into multiple layers, it is possible to form multiple layers at a relatively low temperature (about 500 ° C.), and the resistance pattern may be deteriorated by heat. It is preferable because it does not exist. Furthermore, the form of the composite substrate 1 is not limited to this embodiment, and may be a multilayer substrate of two or more sheets. In this case, a resistance pattern is provided on either substrate, and the conductive patterns on both sides of the composite substrate 1 and the resistance pattern are provided. And may be electrically connected to each other through through holes penetrating a plurality of substrates.
【0015】なお基板10,20に設けたスルーホール
13,23は、その内周壁を導電性材料でメッキする
か、スルーホールが小径の場合はホール自体を導電材料
で充填する等の方法で、導電性を具備させることができ
る。The through holes 13 and 23 provided on the substrates 10 and 20 are plated with a conductive material on the inner peripheral wall thereof, or when the through holes have a small diameter, the holes themselves are filled with a conductive material. It can have conductivity.
【0016】図3は本発明の変形実施例を示す断面図で
あり、図1に示した実施例品とは、第1の基板10の導
電パターン12と第2の基板20の導電パターン21と
を電気的に短絡させるスルーホール6を付設した点で異
なる。該スルーホール6部分は、例えば図中一点鎖線C
で切断することにより、図1に示した実施例品と同等の
複合基板とし得るように複合基板1の端部付近に配置さ
れている。FIG. 3 is a sectional view showing a modified embodiment of the present invention. The embodiment product shown in FIG. 1 includes a conductive pattern 12 on a first substrate 10 and a conductive pattern 21 on a second substrate 20. Is different in that a through hole 6 for electrically short-circuiting is provided. The through hole 6 portion is, for example, a chain line C in the figure.
By slicing with, the composite substrate 1 is arranged in the vicinity of the end portion so that a composite substrate equivalent to the embodiment product shown in FIG. 1 can be obtained.
【0017】一般にLED回路には順方向電流を制御す
るために抵抗素子が挿入され、特に電源が電池である場
合、電池の消耗性や発光輝度の安定性を改善するために
抵抗回路は不可欠であるが、このような特性を要求され
ない用途もある。図3に示す実施例品はかかる用途に対
しても対応可能としたものであり、当該発光基板であれ
ば導電パターン11と導電パターン21との間に通電す
ると、スルーホール6が抵抗パターンRの電流経路に対
して並列に付設されているので、抵抗パターンRによっ
て限流されることなく電流が流れることとなる。また抵
抗パターンRに電流を経由させたい場合(順方向電流を
制御したい場合)は、一点鎖線Cで該複合基板1の一部
を切断してスルーホール6部分を除去することにより達
成可能となるものである。Generally, a resistance element is inserted in the LED circuit in order to control the forward current, and especially when the power source is a battery, the resistance circuit is indispensable in order to improve the consumption of the battery and the stability of the light emission brightness. However, there are applications where such characteristics are not required. The product of the embodiment shown in FIG. 3 is also applicable to such applications. In the case of the light emitting substrate, when the conductive pattern 11 and the conductive pattern 21 are energized, the through hole 6 becomes the resistance pattern R. Since it is provided in parallel with the current path, the current flows without being limited by the resistance pattern R. Further, when it is desired to pass a current through the resistance pattern R (when it is desired to control the forward current), it can be achieved by cutting a part of the composite substrate 1 along the alternate long and short dash line C and removing the through hole 6 part. It is a thing.
【0018】[0018]
【発明の効果】以上説明した通りの本発明の発光基板に
よれば、LEDチップの順方向電流を制御する抵抗体を
基板内に抵抗パターンとして具備させたので、従来のよ
うに基板表面に抵抗体を配置するスペースが不要とな
り、より狭所への発光基板の組み込みが可能となり、従
って発光基板を組み込む機器類の小形化および薄型化も
可能となる。さらに抵抗体をハンダ付け等で実装させる
という工程が不要となるので、生産性も向上するという
利点を有するものである。As described above, according to the light emitting substrate of the present invention, the resistor for controlling the forward current of the LED chip is provided in the substrate as a resistance pattern. A space for arranging the body is not required, and the light emitting substrate can be installed in a narrower space. Therefore, it is possible to reduce the size and thickness of the device incorporating the light emitting substrate. Further, since the step of mounting the resistor by soldering or the like is unnecessary, it has an advantage of improving productivity.
【図1】本発明の発光基板の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of a light emitting substrate of the present invention.
【図2】図1に示した発光基板の斜視図である。FIG. 2 is a perspective view of the light emitting substrate shown in FIG.
【図3】本発明の他の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the present invention.
【図4】従来の発光基板を示す断面図である。FIG. 4 is a cross-sectional view showing a conventional light emitting substrate.
1 複合基板 10 第1の基板 11,12 第1の基板の導電パターン 20 第2の基板 21,22 第2の基板の導電パターン 13,23 スルーホール 3 LEDチップ 31 ボンディングワイヤ R 抵抗パターン DESCRIPTION OF SYMBOLS 1 Composite substrate 10 1st substrate 11,12 Conductive pattern of 1st substrate 20 2nd substrate 21,22 Conductive pattern of 2nd substrate 13,23 Through hole 3 LED chip 31 Bonding wire R Resistance pattern
Claims (2)
面に有する第1の基板と、該第1の基板との接合面に抵
抗パターンを有し他面に導電パターンを有する第2の基
板との貼合わせから少なくとも構成される複合基板と、
前記第1の基板のいずれか一方の導電パターン上に載置
されるLEDチップとからなり、前記抵抗パターンと前
記第1および第2の基板の各導電パターンとは、それぞ
れの基板に設けたスルーホールを介して電気接続されて
いることを特徴とする発光基板。1. A first substrate having on its surface two conductive patterns independent of each other, and a second substrate having a resistance pattern on a joint surface with the first substrate and a conductive pattern on the other surface. A composite substrate composed at least of laminated,
An LED chip mounted on one of the conductive patterns of the first substrate, and the resistance pattern and the conductive patterns of the first and second substrates are provided on the respective substrates. A light emitting substrate, which is electrically connected through a hole.
基板の導電パターンとを短絡するスルーホールを前記抵
抗パターン経路と並列に付設し、該スルーホール部のみ
を必要に応じて切除可能としたことを特徴とする請求項
1記載の発光基板。2. A through hole that short-circuits the conductive pattern of the first substrate and the conductive pattern of the second substrate is provided in parallel with the resistance pattern path, and only the through hole portion can be cut off if necessary. The light emitting substrate according to claim 1, wherein
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4129955A JP2717903B2 (en) | 1992-04-22 | 1992-04-22 | Light emitting board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4129955A JP2717903B2 (en) | 1992-04-22 | 1992-04-22 | Light emitting board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05299700A true JPH05299700A (en) | 1993-11-12 |
JP2717903B2 JP2717903B2 (en) | 1998-02-25 |
Family
ID=15022570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4129955A Expired - Lifetime JP2717903B2 (en) | 1992-04-22 | 1992-04-22 | Light emitting board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2717903B2 (en) |
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JP2001352102A (en) * | 2000-06-07 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Optical semiconductor device |
JP2003017754A (en) * | 2001-07-04 | 2003-01-17 | Rohm Co Ltd | Surface mount semiconductor device |
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WO2006003563A2 (en) * | 2004-06-29 | 2006-01-12 | Koninklijke Philips Electronics N.V. | Light emitting diode module |
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JP2007115874A (en) * | 2005-10-20 | 2007-05-10 | Toyoda Gosei Co Ltd | Structure of bonding pattern, forming method thereof, and light emitting device |
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JP2009076949A (en) * | 2009-01-15 | 2009-04-09 | Nichia Corp | Led display device, and usage therefor |
JP2010187031A (en) * | 2010-05-31 | 2010-08-26 | Rohm Co Ltd | Chip type light emitting element |
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JP2001352102A (en) * | 2000-06-07 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Optical semiconductor device |
JP2003017754A (en) * | 2001-07-04 | 2003-01-17 | Rohm Co Ltd | Surface mount semiconductor device |
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JP2009076949A (en) * | 2009-01-15 | 2009-04-09 | Nichia Corp | Led display device, and usage therefor |
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Also Published As
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