JP2007115874A - Structure of bonding pattern, forming method thereof, and light emitting device - Google Patents
Structure of bonding pattern, forming method thereof, and light emitting device Download PDFInfo
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- JP2007115874A JP2007115874A JP2005305375A JP2005305375A JP2007115874A JP 2007115874 A JP2007115874 A JP 2007115874A JP 2005305375 A JP2005305375 A JP 2005305375A JP 2005305375 A JP2005305375 A JP 2005305375A JP 2007115874 A JP2007115874 A JP 2007115874A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
Description
本発明は、高出力型のＬＥＤ（Light Emitting Diode：発光ダイオード）装置に使用して好適な接合用パターンの構造、その形成方法及び発光装置に関する。 The present invention relates to a structure of a bonding pattern suitable for use in a high power LED (Light Emitting Diode) device, a method for forming the same, and a light emitting device.
近年、高出力のＬＥＤ素子の開発が進められてきており、既に数ワットの大出力タイプのものも製品化されている。ＬＥＤ素子は、発熱の少ないことが特徴であるが、高出力（高輝度）タイプのＬＥＤ素子は大電流が流れるため、無視できないレベルの発熱が生じる。このため、例えばセラミックス等の材料からなるパッケージ内にＬＥＤ素子を収容し、ＬＥＤ素子からの発生熱を効果的に放熱してその信頼性を確保することが行われる。 In recent years, development of high-power LED elements has been promoted, and a high-power type of several watts has already been commercialized. The LED element is characterized by low heat generation. However, since a high current (high luminance) type LED element flows a large current, a non-negligible level of heat generation occurs. For this reason, for example, an LED element is accommodated in a package made of a material such as ceramics, and heat generated from the LED element is effectively radiated to ensure its reliability.
従来、この種のＬＥＤ素子を備えた発光装置は、光取出側に開口するケースを有するパッケージと、ケース内に収容されたＬＥＤ素子と、このＬＥＤ素子をケース内で封止する蛍光体含有の封止部材とを備えたものが知られている（例えば特許文献１参照）。 Conventionally, a light-emitting device provided with this type of LED element includes a package having a case opened on the light extraction side, an LED element accommodated in the case, and a phosphor-containing material that seals the LED element in the case. The thing provided with the sealing member is known (for example, refer patent document 1).
このような発光装置におけるパッケージの製造は、焼結前のセラミックスパッケージにスクリーン印刷によって配線・電極パターンを形成してから、セラミックスパッケージを焼結することにより行われる。
しかし、従来の発光装置においては、パッケージの製造時に焼結前のセラミックスパッケージに配線・電極パターンを形成し、セラミックスパッケージを焼結（焼結温度：１５００℃程度）するため、配線・電極パターンの材料としてはＷ（タングステン）等の高融点金属を用いざるを得ず、パターン材料選択上の自由度が低下するという問題があった。 However, in the conventional light emitting device, the wiring / electrode pattern is formed on the ceramic package before sintering at the time of manufacturing the package, and the ceramic package is sintered (sintering temperature: about 1500 ° C.). As a material, a refractory metal such as W (tungsten) must be used, and there is a problem that the degree of freedom in selecting a pattern material is lowered.
また、特許文献１に示す発光装置によると、ＬＥＤ素子がセラミックスパッケージ内の素子搭載面に単に搭載されているに過ぎず、このため高出力型のＬＥＤ素子（発光素子）における十分な電力供給・放熱構造を得ることができないという問題もあった。 Further, according to the light emitting device shown in Patent Document 1, the LED element is simply mounted on the element mounting surface in the ceramic package, and therefore, sufficient power supply / power supply in the high output type LED element (light emitting element) is achieved. There was also a problem that a heat dissipation structure could not be obtained.
従って、本発明の目的は、パターン材料選択上の自由度を高めることができるとともに、高出力型の発光素子における十分な電力供給・放熱構造を得ることができる接合用パターンの構造、その形成方法及び発光装置を提供することにある。 Accordingly, an object of the present invention is to provide a bonding pattern structure capable of increasing the degree of freedom in selecting a pattern material and obtaining a sufficient power supply / heat dissipation structure in a high-power light-emitting element, and a method for forming the same And providing a light emitting device.
（１）本発明は、上記目的を達成するために、発光素子を搭載する素子搭載基板に配設される接合用パターンの構造であって、前記接合用パターンは、前記素子搭載基板の素子搭載面の裏面に形成されたパターン部と、前記パターン部内に埋設された補強部とからなることを特徴とする接合用パターンの構造を提供する。 (1) In order to achieve the above object, the present invention is a structure of a bonding pattern disposed on an element mounting substrate on which a light emitting element is mounted, and the bonding pattern is mounted on the element mounting substrate. There is provided a bonding pattern structure comprising a pattern portion formed on the back surface of a surface and a reinforcing portion embedded in the pattern portion.
（２）本発明は、上記目的を達成するために、光取出側に開口するケースを有するパッケージと、前記ケース内に収容された発光素子と、前記ケース内に充填されて前記発光素子を封止する封止部材とを備えた発光装置において、上記（１）に記載の接合用パターンの構造を備えたことを特徴とする発光装置を提供する。 (2) In order to achieve the above object, the present invention provides a package having a case opened on the light extraction side, a light emitting element accommodated in the case, a case filled in the case and sealing the light emitting element. A light-emitting device including a sealing member to be stopped is provided. The light-emitting device includes the bonding pattern structure described in (1) above.
（３）本発明は、上記目的を達成するために、発光素子を搭載する素子搭載基板に配設される接合用パターンの形成方法であって、前記素子搭載基板の素子搭載面の裏面に補強部を配置する工程と、前記補強部の周囲にパターン部を形成する工程とを含むことを特徴とする接合用パターンの形成方法を提供する。 (3) In order to achieve the above object, the present invention is a method for forming a bonding pattern disposed on an element mounting substrate on which a light emitting element is mounted, and is reinforced on the back surface of the element mounting surface of the element mounting substrate. There is provided a method for forming a bonding pattern, comprising a step of arranging a portion and a step of forming a pattern portion around the reinforcing portion.
本発明によると、パターン材料選択上の自由度を高めることができるとともに、高出力型の発光素子における十分な電力供給・放熱構造を得ることができる。 According to the present invention, the degree of freedom in selecting a pattern material can be increased, and a sufficient power supply / heat dissipation structure in a high-power light-emitting element can be obtained.
（第１の実施の形態）
図１は、本発明の第１の実施の形態に係る接合用パターンの構造を備えた発光装置を説明するために示す断面図である。
(First embodiment)
FIG. 1 is a cross-sectional view for explaining a light emitting device having a bonding pattern structure according to a first embodiment of the present invention.
（発光装置１の全体構成）
図１において、表面実装型の発光装置１は、素子収容用のパッケージ２と、このパッケージ２に収容されたＬＥＤ素子３と、蛍光体９を含有し、パッケージ２内に充填されることによってＬＥＤ素子３を封止する封止部材８によって大略構成されており、実装用基板４上に搭載されている。実装用基板４は、例えば、ガラスエポキシ基板やセラミックス基板等の絶縁性材料によって形成されている。また、実装用基板４の装置搭載面には、電力供給用の回路パターン４Ｂが形成されている。
(Whole structure of the light emitting device 1)
In FIG. 1, a surface-mount type light emitting device 1 includes a package 2 for housing an element, an LED element 3 housed in the package 2, and a phosphor 9. It is generally constituted by a sealing member 8 that seals the element 3, and is mounted on the mounting substrate 4. The mounting substrate 4 is formed of an insulating material such as a glass epoxy substrate or a ceramic substrate. Further, a circuit pattern 4B for supplying power is formed on the device mounting surface of the mounting substrate 4.
（パッケージ２の構成）
パッケージ２は、ＬＥＤ素子３を収容可能なケース５と、ケース５の下側に設けられる素子搭載基板６とを有している。素子搭載基板６の実装側面（裏面）には、実装用基板４に対する接合用パターン１００，１０１が配設されている。
(Configuration of package 2)
The package 2 includes a case 5 that can accommodate the LED element 3 and an element mounting substrate 6 provided below the case 5. On the mounting side surface (back surface) of the element mounting substrate 6, bonding patterns 100 and 101 for the mounting substrate 4 are disposed.
接合用パターン１００，１０１は、素子搭載基板６の素子搭載面とは反対側の裏面に形成されたパターン部１００Ａ，１０１Ａと、これらパターン部１００Ａ，１０１Ａ内に埋設された補強部１００Ｂ，１０１Ｂとからなり、素子搭載基板６と実装用基板４との間に介装されている。 The bonding patterns 100 and 101 include pattern portions 100A and 101A formed on the back surface opposite to the element mounting surface of the element mounting substrate 6, and reinforcing portions 100B and 101B embedded in the pattern portions 100A and 101A. And is interposed between the element mounting substrate 6 and the mounting substrate 4.
一方の接合用パターン１００は電力供給用経路に配置されている。パターン部１００Ａは、素子搭載基板６の第３配線パターン１６，１７（後述）に接続され、銀（Ａｇ）等の導電性材料によって形成されている。パターン部１００Ａの材料としては、銀（Ａｇ）の他に、銀（Ａｇ）−白金（Ｐｔ）合金や金（Ａｕ）が用いられる。補強部１００Ｂは、円柱状のガラス等からなり、素子搭載基板６の第３配線パターン１６，１７に縦横方向に複数個並列して配置されている。 One joining pattern 100 is arranged in the power supply path. The pattern portion 100A is connected to third wiring patterns 16 and 17 (described later) of the element mounting substrate 6 and is formed of a conductive material such as silver (Ag). As a material of the pattern portion 100A, silver (Ag) -platinum (Pt) alloy or gold (Au) is used in addition to silver (Ag). The reinforcing portion 100B is made of cylindrical glass or the like, and a plurality of reinforcing portions 100B are arranged in parallel in the vertical and horizontal directions on the third wiring patterns 16 and 17 of the element mounting substrate 6.
他方の接合用パターン１０１は放熱用経路に配置されている。パターン部１０１Ａは、素子搭載基板６の第４配線パターン１８（後述）に接続され、全体がＡｇ等の熱伝導性材料によって形成されている。パターン部１０１Ａの材料としては、パターン部１００Ａの材料と同様に、Ａｇの他に、Ａｇ−Ｐｔ合金やＡｕが用いられる。また、パターン部１０１Ａは実装用基板４への熱伝導を高めるために素子搭載基板６に設けられるビアパターン２２の直下に設けられる。補強部１０１Ｂは、円柱状のガラス等からなり、素子搭載基板６の第４配線パターン１８に縦横方向に複数個並列して配置されている。 The other bonding pattern 101 is disposed in the heat dissipation path. The pattern portion 101A is connected to a fourth wiring pattern 18 (described later) of the element mounting substrate 6, and is entirely formed of a thermally conductive material such as Ag. As the material of the pattern portion 101A, Ag—Pt alloy or Au is used in addition to Ag, similarly to the material of the pattern portion 100A. The pattern portion 101 </ b> A is provided immediately below the via pattern 22 provided on the element mounting substrate 6 in order to enhance heat conduction to the mounting substrate 4. The reinforcing portion 101B is made of cylindrical glass or the like, and a plurality of reinforcing portions 101B are arranged in parallel in the vertical and horizontal directions on the fourth wiring pattern 18 of the element mounting substrate 6.
（ケース５の構成）
ケース５は、基板側から光取出側に向かって広がる内部空間を有し、全体が例えばＡｌ2Ｏ3等のセラミックス材料からなる箱体によって形成されている。このケース５を構成する材料としてはＡｌ2Ｏ3の他にシリコン（Ｓｉ）、窒化アルミニウム（ＡｌＮ）、あるいは白色樹脂を用いることもできる。ケース５の内部空間には、ＬＥＤ素子３からの光を光取出側に反射するための傾斜面５ａが設けられている。内部空間には、前述したようにＬＥＤ素子３を封止する封止部材８が充填されている。
(Structure of case 5)
The case 5 has an internal space that widens from the substrate side toward the light extraction side, and is entirely formed of a box made of a ceramic material such as Al 2 O 3 . As a material constituting the case 5, silicon (Si), aluminum nitride (AlN), or white resin can be used in addition to Al 2 O 3 . In the internal space of the case 5, an inclined surface 5 a for reflecting light from the LED element 3 to the light extraction side is provided. The internal space is filled with the sealing member 8 that seals the LED element 3 as described above.
（素子搭載基板６の構成）
素子搭載基板６は、Ａｌ2Ｏ3のセラミックス材料によって形成されている。素子搭載基板６の材料としては、Ａｌ2Ｏ3の他に、ＳｉやＡｌＮあるいは白色樹脂を用いることができる。
(Configuration of element mounting substrate 6)
The element mounting substrate 6 is made of an Al 2 O 3 ceramic material. As the material of the element mounting substrate 6, in addition to the Al 2 O 3, it is possible to use Si or AlN or white resin.
素子搭載基板６の光取出側面（表面）には、第１パターン部１０Ａ及び第２パターン部１０Ｂを有するサブマウント１０を搭載する第１配線パターン１１が設けられている。また、素子搭載基板６の表面には、第１パターン部１０Ａ及び第２パターン部１０ＢにそれぞれＡｕからなるボンディングワイヤ１２，１３を介して接続する第２配線パターン１４，１５が設けられている。 A first wiring pattern 11 for mounting the submount 10 having the first pattern portion 10A and the second pattern portion 10B is provided on the light extraction side surface (front surface) of the element mounting substrate 6. Further, on the surface of the element mounting substrate 6, second wiring patterns 14 and 15 connected to the first pattern portion 10A and the second pattern portion 10B via bonding wires 12 and 13 made of Au, respectively, are provided.
素子搭載基板６の裏面には、ＬＥＤ素子３に対して電圧を印加するための第３配線パターン１６，１７が設けられている。また、素子搭載基板６の裏面には第４配線パターン１８が設けられている。 On the back surface of the element mounting substrate 6, third wiring patterns 16 and 17 for applying a voltage to the LED element 3 are provided. A fourth wiring pattern 18 is provided on the back surface of the element mounting substrate 6.
第１配線パターン１１と第４配線パターン１８は、素子搭載基板６を貫通するビアホール１９内に設けられたビアパターン２２で接続されて実装用基板４の回路パターン４Ｂへの放熱経路が設けられている。この第１配線パターン１１と第４配線パターン１８に接続される回路パターン４Ｂは給電用ではなく、放熱用に設けられるパターンである。 The first wiring pattern 11 and the fourth wiring pattern 18 are connected by a via pattern 22 provided in a via hole 19 penetrating the element mounting substrate 6 to provide a heat dissipation path to the circuit pattern 4B of the mounting substrate 4. Yes. The circuit pattern 4B connected to the first wiring pattern 11 and the fourth wiring pattern 18 is a pattern provided not for power feeding but for heat dissipation.
第２配線パターン１４，１５と第３配線パターン１６，１７は、それぞれ素子搭載基板６を貫通するビアホール２０，２１内に設けられたビアパターン２３，２４によって実装用基板４の回路パターン４Ｂに電気的に接続されている。 The second wiring patterns 14 and 15 and the third wiring patterns 16 and 17 are electrically connected to the circuit pattern 4B of the mounting substrate 4 by via patterns 23 and 24 provided in via holes 20 and 21 penetrating the element mounting substrate 6, respectively. Connected.
第１配線パターン１１及び第２配線パターン１４，１５・第３配線パターン１６，１７・第４配線パターン１８は、例えばタングステン（Ｗ），モリブデン（Ｍｏ）、等の高融点金属によりビアパターン２２、２３と一体的に形成されている。なお、第１配線パターン１１、第２配線パターン１４，１５、第３配線パターン１６，１７、第４配線パターン１８の表面には、必要に応じてニッケル（Ｎｉ），アルミニウム（Ａｌ），白金（Ｐｔ），チタン（Ｔｉ）、Ａｕ、Ａｇ、Ｃｕなど単層又は積層あるいは半田材料による金属層が形成される。 The first wiring pattern 11 and the second wiring patterns 14, 15, the third wiring patterns 16, 17, and the fourth wiring pattern 18 are, for example, via patterns 22 made of a high melting point metal such as tungsten (W), molybdenum (Mo), etc. 23 is formed integrally. In addition, nickel (Ni), aluminum (Al), platinum (on the surface of the first wiring pattern 11, the second wiring patterns 14, 15, the third wiring patterns 16, 17, and the fourth wiring pattern 18 as necessary. Pt), titanium (Ti), Au, Ag, Cu, etc., a single layer or a laminated layer or a metal layer made of a solder material is formed.
（封止部材８の構成）
封止部材８は、シリコーン等の樹脂材料によって形成されており、ＬＥＤ素子３からの光（青色光）を受けて励起されることにより、波長変換光（黄色光）を発するＹＡＧ（ＹｔｔｒｉｕｍＡｌｕｍｉｎｕｍ Ｇａｒｎｅｔ）等の蛍光体９を含有している。
(Configuration of sealing member 8)
The sealing member 8 is made of a resin material such as silicone, and is YAG (Yttrium Aluminum Garnet) that emits wavelength-converted light (yellow light) when excited by receiving light (blue light) from the LED element 3. And the like.
（ＬＥＤ素子３の構成）
ＬＥＤ素子３は、ｐ側電極及びｎ側電極（共に図示せず）を有するフリップチップ型の青色ＬＥＤ素子からなり、素子搭載基板６上にサブマウント１０を介して搭載され、かつ、封止部材８によって封止されている。ＬＥＤ素子３は、サファイア基板上にＡｌＮバッファ層と、ｎ−ＧａＮ層と、発光層と、ｐ−ＧａＮ層とを順次結晶成長させることにより形成されている。このＬＥＤ素子３は１ｍｍ角のサイズで形成されている。
(Configuration of LED element 3)
The LED element 3 is composed of a flip-chip type blue LED element having a p-side electrode and an n-side electrode (both not shown), is mounted on the element mounting substrate 6 via the submount 10, and is a sealing member 8 is sealed. The LED element 3 is formed by sequentially growing an AlN buffer layer, an n-GaN layer, a light emitting layer, and a p-GaN layer on a sapphire substrate. This LED element 3 is formed in a 1 mm square size.
（発光装置１の動作）
ＬＥＤ素子３に対して図示しない電源から回路パターン４Ｂ及び接合用パターン１００・第３配線パターン１６，１７・ビアパターン２３，２４・第２配線パターン１４，１５・ボンディングワイヤ１２，１３を介して電圧が印加されると、ＬＥＤ素子３の発光層において発光波長約４７０ｎｍの青色光を発し、この光がＬＥＤ素子３の光取出面から封止部材８に出射される。この場合、ＬＥＤ素子３からの出射光が封止部材８に含まれる蛍光体９に照射される。
(Operation of the light emitting device 1)
A voltage is applied to the LED element 3 from a power source (not shown) through the circuit pattern 4B and the bonding pattern 100, the third wiring patterns 16, 17, the via patterns 23, 24, the second wiring patterns 14, 15 and the bonding wires 12, 13. Is applied, blue light having an emission wavelength of about 470 nm is emitted from the light emitting layer of the LED element 3, and this light is emitted from the light extraction surface of the LED element 3 to the sealing member 8. In this case, the emitted light from the LED element 3 is applied to the phosphor 9 included in the sealing member 8.
次に、蛍光体９は入射した光（青色光）を受けて励起されることにより黄色の波長変換光を発する。このため、ＬＥＤ素子３から発せられる青色の放射光と蛍光体９から発せられる黄色の波長変換光とが混合されて白色光となる。そして、この白色光が封止部材８を透過し、その光出射面から外部に出射される。 Next, the phosphor 9 emits yellow wavelength-converted light when excited by receiving incident light (blue light). For this reason, the blue radiation light emitted from the LED element 3 and the yellow wavelength-converted light emitted from the phosphor 9 are mixed to form white light. Then, the white light passes through the sealing member 8 and is emitted to the outside from the light emission surface.
一方、ＬＥＤ素子３において発生する熱がサブマウント１０を介して第１配線パターン１１及びビアパターン２２・第４配線パターン１８・接合用パターン１０１を介して実装用基板４の回路パターン４Ｂに放散される。 On the other hand, heat generated in the LED element 3 is dissipated through the submount 10 to the circuit pattern 4B of the mounting substrate 4 through the first wiring pattern 11, the via pattern 22, the fourth wiring pattern 18, and the bonding pattern 101. The
次に、本実施の形態に係る発光装置における接合用パターンの形成方法につき、図２（ａ）〜（ｅ）を用いて説明する。 Next, a method for forming a bonding pattern in the light emitting device according to this embodiment will be described with reference to FIGS.
図２（ａ）〜（ｅ）は、本発明の第１の実施の形態に係る接合用パターンの形成方法を説明するために示す図である。図２（ａ）はグリーンシートの孔あけ工程を、図２（ｂ）はビアパターンの形成工程を、図２（ｃ）は補強部の形成工程を、図２（ｄ）は焼成工程を、図２（ｅ）はパターン部の形成工程をそれぞれ説明するために示す断面図である。 FIGS. 2A to 2E are views for explaining a bonding pattern forming method according to the first embodiment of the present invention. 2A shows a green sheet drilling step, FIG. 2B shows a via pattern forming step, FIG. 2C shows a reinforcing portion forming step, and FIG. 2D shows a firing step. FIG. 2E is a cross-sectional view for explaining the pattern portion forming process.
本実施の形態に示す接合用パターンの形成方法は、「グリーンシートの孔あけ」及び「ビアパターンの形成」・「補強部の形成」・「焼成」・「パターン部の形成」の各工程が順次実施されるため、これら各工程を順次説明する。 The bonding pattern forming method shown in the present embodiment includes the steps of “drilling a green sheet” and “forming a via pattern”, “forming a reinforcing part”, “firing”, and “forming a pattern part”. Since these steps are performed sequentially, each of these steps will be described sequentially.
「グリーンシートの孔あけ」
先ず、素子搭載基板用のグリーンシート（厚さ１０〜５００μｍ程度のＡｌ2Ｏ3）Ｓにビアーホール１９〜２１となるパターン形成用の貫通孔を設ける。次に、孔あけ済みのグリーンシートＳに１５００℃余で熱処理を施す（焼成）。この場合、焼成後には、図２（ａ）に示すように、ビアホール１９〜２１（ビアホール１９のみ図示）を有する素子搭載基板６が形成される。なお、予めビアホール１９〜２１を有する素子搭載基板６を用意すれば、「グリーンシートの孔あけ」工程は不要である。
"Drilling green sheets"
First, through holes for pattern formation to be via holes 19 to 21 are provided in a green sheet (Al 2 O 3 having a thickness of about 10 to 500 μm) S for an element mounting substrate. Next, the perforated green sheet S is subjected to heat treatment at 1500 ° C. (firing). In this case, as shown in FIG. 2A, the element mounting substrate 6 having via holes 19 to 21 (only the via holes 19 are shown) is formed after firing. If the element mounting substrate 6 having the via holes 19 to 21 is prepared in advance, the “green sheet drilling” step is unnecessary.
「ビアパターンの形成」
先ず、素子搭載基板６のビアホール１９〜２１にビアパターン２２〜２４に応じてＡｇペーストをスクリーン印刷する。次に、Ａｇペーストが印刷された素子搭載基板６に８５０℃余で熱処理を施す。この場合、素子搭載基板６に熱処理が施されると、図２（ｂ）に示すようにビアパターン２２〜２４（ビアパターン２２のみ図示）を有する素子搭載基板６が形成される。
"Forming via patterns"
First, Ag paste is screen-printed in the via holes 19 to 21 of the element mounting substrate 6 according to the via patterns 22 to 24. Next, the element mounting substrate 6 on which the Ag paste is printed is subjected to heat treatment at about 850 ° C. In this case, when the element mounting substrate 6 is heat-treated, the element mounting substrate 6 having via patterns 22 to 24 (only the via pattern 22 is shown) is formed as shown in FIG.
「補強部の形成」
先ず、接合用パターン１００，１０１の補強部１００Ｂ，１０１Ｂに応じて補強部形成用の貫通孔が複数個配設されたハードマスクＭを素子搭載基板６の裏面に配置する。次に、図２（ｃ）に示すように、ハードマスクＭの各貫通孔ｍに補強部１００Ｂ，１０１Ｂに応じてガラスペーストＰをスクリーン印刷する。
“Formation of reinforcement”
First, a hard mask M in which a plurality of through holes for forming reinforcing portions are arranged in accordance with the reinforcing portions 100B and 101B of the bonding patterns 100 and 101 is disposed on the back surface of the element mounting substrate 6. Next, as shown in FIG. 2C, a glass paste P is screen-printed in each through hole m of the hard mask M in accordance with the reinforcing portions 100B and 101B.
「焼成」
素子搭載基板６からハードマスクを離脱し、素子搭載基板６に８５０℃余で熱処理を施す（焼成）。この場合、焼成後には、図２（ｄ）に示すように、ガラスからなる円柱状の補強部１００Ｂ，１０１Ｂ（補強部１００Ｂのみ図示）（高さ２μｍ程度）が縦横方向に複数個並列して接着される。
"Baking"
The hard mask is removed from the element mounting substrate 6, and the element mounting substrate 6 is heat-treated at 850 ° C. (firing). In this case, after firing, as shown in FIG. 2 (d), a plurality of columnar reinforcing portions 100B, 101B made of glass (only the reinforcing portion 100B is shown) (about 2 μm high) are arranged in parallel in the vertical and horizontal directions. Glued.
「パターン部の形成」
先ず、素子搭載基板６の裏面にパターン部１００Ａ，１０１Ａに応じてＡｇペーストをスクリーン印刷する。次に、Ａｇペーストが印刷された素子搭載基板６に８５０℃余で熱処理を施す。この場合、素子搭載基板６に熱処理が施されると、図２（ｅ）に示すようにパターン部１００Ａ，１０１Ａ（パターン部１００Ａのみ図示）を有する素子搭載基板６が形成される。そして、パターン部１００Ａは電力供給用経路に、またパターン部１０１Ａは放熱用経路にそれぞれ配置される。
このようにして、素子搭載基板６の裏面に接合用パターン１００，１０１を形成することができる。
"Formation of pattern part"
First, Ag paste is screen-printed on the back surface of the element mounting substrate 6 according to the pattern portions 100A and 101A. Next, the element mounting substrate 6 on which the Ag paste is printed is subjected to heat treatment at about 850 ° C. In this case, when the element mounting substrate 6 is subjected to heat treatment, the element mounting substrate 6 having the pattern portions 100A and 101A (only the pattern portion 100A is shown) is formed as shown in FIG. The pattern portion 100A is disposed on the power supply path, and the pattern portion 101A is disposed on the heat dissipation path.
In this way, the bonding patterns 100 and 101 can be formed on the back surface of the element mounting substrate 6.
なお、本実施の形態では、単一組の接合用パターン１００，１０１を形成する場合について説明したが、実際の接合用パターンは複数組形成される。このため、複数組の接合用パターンは、上述した接合用パターンの形成方法において、「パターン部の形成」の工程後にダイサーによって素子搭載基板毎に分離される。 In the present embodiment, the case where a single set of bonding patterns 100 and 101 is formed has been described. However, a plurality of actual bonding patterns are formed. Therefore, a plurality of sets of bonding patterns are separated for each element mounting substrate by a dicer after the “pattern portion formation” step in the bonding pattern forming method described above.
（第１の実施の形態の効果）
上記した第１の実施の形態によれば、次に示す効果が得られる。
(Effects of the first embodiment)
According to the first embodiment described above, the following effects can be obtained.
（１）素子搭載基板６にＷ等の高融点金属以外の金属を用いて容易に接合用パターン１００，１０１等のパターンを厚膜で形成することができるため、接合用パターン１００、１０１の材料選択の自由度が向上する。 (1) Since the element mounting substrate 6 can be easily formed with a thick film such as the bonding patterns 100 and 101 using a metal other than a refractory metal such as W, the material of the bonding patterns 100 and 101 The degree of freedom of selection is improved.
（２）接合用パターン１００，１０１のパターン部１００Ａ，１０１Ａ内には補強部１００Ｂ，１０１Ｂが埋設されているため、膜厚の大なる接合用パターン１００，１０１を形成してもパターン部１００Ａ，１０１Ａのだれ発生を防止し、パターンの剥がれや導電不良、放熱不良を防ぐことができる。このため、パターン部１００Ａ，１０１Ａを種々の厚さで容易に形成することができ、凹凸が存在するような接合面に対してもパターンの膜厚調整によって対応できるので、パターン部１００Ａ，１０１Ａの設計に自由度が向上する。 (2) Since the reinforcing portions 100B and 101B are embedded in the pattern portions 100A and 101A of the bonding patterns 100 and 101, the pattern portions 100A and 101B are formed even when the bonding patterns 100 and 101 having a large film thickness are formed. It is possible to prevent the occurrence of dripping of 101A and prevent peeling of the pattern, poor conductivity, and poor heat dissipation. For this reason, the pattern portions 100A and 101A can be easily formed with various thicknesses, and it is possible to cope with a bonding surface where unevenness exists by adjusting the film thickness of the pattern. Increased design freedom.
なお、第１の実施の形態では、サブマウント１０を介してＬＥＤ素子３を素子搭載基板６にフリップ実装した発光装置１を説明したが、サブマウント１０を設けずにＬＥＤ素子３を素子搭載基板６に実装する発光装置１であっても良い。 In the first embodiment, the light emitting device 1 in which the LED element 3 is flip-mounted on the element mounting substrate 6 via the submount 10 has been described. However, the LED element 3 is mounted on the element mounting substrate without providing the submount 10. 6 may be the light emitting device 1 to be mounted on.
（第２の実施の形態）
図３は、本発明の第２の実施の形態に係る発光装置の断面図である。
(Second Embodiment)
FIG. 3 is a cross-sectional view of a light emitting device according to the second embodiment of the present invention.
この発光装置１は、第１の実施の形態で説明した素子搭載基板６上に熱伝導性に優れるＡｇペースト等の接着剤３０によってフェイスアップ型のＬＥＤ素子３を固定し、ＬＥＤ素子３の電極を第２配線パターン１５および第３配線パターン１６にボンディングワイヤ１２，１３で接合している構成において第１の実施の形態と相違している。 In the light emitting device 1, the face-up type LED element 3 is fixed on the element mounting substrate 6 described in the first embodiment with an adhesive 30 such as an Ag paste having excellent thermal conductivity, and the electrode of the LED element 3 is fixed. Is different from the first embodiment in the configuration in which the second wiring pattern 15 and the third wiring pattern 16 are bonded by the bonding wires 12 and 13.
（第２の実施の形態の効果）
上記した第２の実施の形態によれば、フェイスアップ型のＬＥＤ素子３を熱伝導性に優れる接着剤３０で素子搭載基板６に固定することにより、部品点数の削減を図りながらもＬＥＤ素子３の発光に伴う熱をビアパターン２２を介して接合用パターン１０１のパターン部１０１Ａに熱伝導させることができ、放熱性の良好な発光装置１を安価に提供できる。
(Effect of the second embodiment)
According to the second embodiment described above, the face-up type LED element 3 is fixed to the element mounting substrate 6 with the adhesive 30 having excellent thermal conductivity, so that the LED element 3 can be reduced while reducing the number of components. The heat associated with the light emission can be conducted to the pattern portion 101A of the bonding pattern 101 via the via pattern 22, and the light emitting device 1 with good heat dissipation can be provided at low cost.
（素子搭載基板６の他の構成）
図４は、素子搭載基板の他の形成方法を示す断面図である。第１及び第２の実施の形態では、表面に第１配線パターン１１及び第４配線パターン１８を有したグリーンシートＳを用いたが、基板形成時に配線パターンを導電ペーストで形成することもできる。
(Other configuration of element mounting substrate 6)
FIG. 4 is a cross-sectional view showing another method for forming an element mounting substrate. In the first and second embodiments, the green sheet S having the first wiring pattern 11 and the fourth wiring pattern 18 on the surface is used, but the wiring pattern can also be formed with a conductive paste when the substrate is formed.
まず、図４（ａ）に示すように、未加工のグリーンシートＳを用意し、図４（ｂ）に示すように孔あけ加工によりビアホール１９〜２１（ビアホール１９のみ図示）を形成する。次に、図４（ｃ）に示すように素子搭載基板６の実装面側にＡｇペーストを膜状に塗布しつつビアホール１９〜２１を埋めた後、４００℃余で熱処理を施してＡｇペーストを乾燥させることにより第１配線パターン１１及びビアパターン２２〜２４（ビアパターン２４のみ図示）を形成する。次に、第１及び第２の実施の形態と同様に補強部形成用の貫通孔が複数個配設されたハードマスクを第１配線パターン１１上に配置し、ガラスペーストをスクリーン印刷し、ハードマスクを除去してガラスを固化させることによって、図４（ｄ）に示すように第１配線パターン１１上にマスクパターンに応じた間隔で補強部１００Ｂ、１０１Ｂ（補強部１０１Ｂのみ図示）を形成する。次に、補強部１００Ｂの形成面にＡｇペーストをスクリーン印刷し、素子搭載基板６に４００℃余で熱処理を施すことによってパターン部１００Ａ，１０１Ａ（パターン部１００Ａのみ図示）が形成される。このようにすることによっても、図４（ｅ）に示すように、パターン部１００Ａ、１０１Ａ及び補強部１００Ｂ、１０１Ｂからなる接合用パターン１００を有する素子搭載基板６を形成することができる。図４（ｅ）に示す素子搭載基板６は、サブマウント搭載面側に配線パターンを設けないものであるが、Ａｇペーストで形成することも可能である。 First, as shown in FIG. 4A, an unprocessed green sheet S is prepared, and via holes 19 to 21 (only the via hole 19 is shown) are formed by drilling as shown in FIG. 4B. Next, as shown in FIG. 4C, after filling the via holes 19 to 21 while applying the Ag paste on the mounting surface side of the element mounting substrate 6 as a film, heat treatment is performed at 400 ° C. and the Ag paste is applied. By drying, the first wiring pattern 11 and the via patterns 22 to 24 (only the via pattern 24 is shown) are formed. Next, similarly to the first and second embodiments, a hard mask in which a plurality of through holes for forming reinforcing portions are arranged is arranged on the first wiring pattern 11, and glass paste is screen-printed, By removing the mask and solidifying the glass, as shown in FIG. 4D, reinforcing portions 100B and 101B (only the reinforcing portion 101B is shown) are formed on the first wiring pattern 11 at intervals according to the mask pattern. . Next, Ag paste is screen-printed on the formation surface of the reinforcing portion 100B, and the element mounting substrate 6 is heat-treated at a temperature of about 400 ° C. to form the pattern portions 100A and 101A (only the pattern portion 100A is shown). Also by doing in this way, as shown in FIG.4 (e), the element mounting substrate 6 which has the pattern 100 for joining which consists of pattern part 100A, 101A and reinforcement part 100B, 101B can be formed. The element mounting substrate 6 shown in FIG. 4 (e) has no wiring pattern on the submount mounting surface side, but can also be formed with an Ag paste.
（素子搭載基板６の更に他の構成）
図５は、素子搭載基板の更に他の形成方法を示す断面図である。上記した素子搭載基板６の他の構成において補強部１００Ｂ、１０１Ｂを設ける際に、補強部１００Ｂ、１０１Ｂの形状が図５（ｄ）に示すように拡大されたものであっても良い。その他の工程については図４に示した基板形成工程と同様である。このような形状とした場合には、実装用基板への放熱性を確保しながらも補強部１００Ｂの強度をより高めることができる。
(Still another structure of the element mounting substrate 6)
FIG. 5 is a cross-sectional view showing still another method of forming the element mounting substrate. When the reinforcing portions 100B and 101B are provided in the other configuration of the element mounting substrate 6 described above, the shapes of the reinforcing portions 100B and 101B may be enlarged as shown in FIG. Other steps are the same as those of the substrate forming step shown in FIG. When it is set as such a shape, the intensity | strength of the reinforcement part 100B can be raised more, ensuring the heat dissipation to the board | substrate for mounting.
（第３の実施の形態）
図６は、本発明の第３の実施の形態に係る接合用パターンの構造を備えた発光装置を説明するために示す断面図である。図６において、図１と同一の部材については同一の符号を付し、詳細な説明は省略する。
(Third embodiment)
FIG. 6 is a cross-sectional view for explaining a light emitting device having a bonding pattern structure according to the third embodiment of the present invention. 6, the same members as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
図６に示すように、第３の実施の形態に示す発光装置４１は、電力供給用経路のみに配置された接合用パターン４２を備えた点に特徴がある。 As shown in FIG. 6, the light-emitting device 41 shown in the third embodiment is characterized in that it includes a bonding pattern 42 arranged only in the power supply path.
このため、接合用パターン４２のパターン部４２Ａは、素子搭載基板６の第３配線パターン１６，１７に接続され、Ａｇ等の高導電性材料によって形成されている。パターン部４２Ａの材料としては、Ａｇの他に、Ａｇ−Ｐｔ合金やＡｕが用いられる。パターン部４２Ａの厚さは、後述する凸部３００の高さに応じて適宜設定される。接合用パターン４２の補強部４２Ｂは、円柱状のガラス等からなり、素子搭載基板６の第３配線パターン１６，１７に縦横方向に複数個並列して配置されている。 For this reason, the pattern portion 42A of the bonding pattern 42 is connected to the third wiring patterns 16 and 17 of the element mounting substrate 6 and is formed of a highly conductive material such as Ag. As a material of the pattern portion 42A, Ag—Pt alloy or Au is used in addition to Ag. The thickness of the pattern portion 42A is appropriately set according to the height of the convex portion 300 described later. The reinforcing portions 42B of the bonding pattern 42 are made of columnar glass or the like, and a plurality of reinforcing portions 42B are arranged in parallel in the vertical and horizontal directions on the third wiring patterns 16 and 17 of the element mounting substrate 6.
実装用基板４の裏面には、放熱用経路に位置し、かつ第４配線パターン１８に接続する凸部３００が突設されている。この凸部３００は、銅合金等の高熱伝導性を有する金属材料によって形成される。凸部３００は、実装用基板４の図示しない面との間に貫通状に設けられるビアホール４０２のビアパターン４０３と接続された回路パターン４Ｂに半田接合されている。 On the back surface of the mounting substrate 4, a protrusion 300 is provided so as to be located on the heat dissipation path and connected to the fourth wiring pattern 18. The convex portion 300 is formed of a metal material having high thermal conductivity such as a copper alloy. The convex portion 300 is soldered to the circuit pattern 4B connected to the via pattern 403 of the via hole 402 provided in a penetrating manner with the surface (not shown) of the mounting substrate 4.
（第３の実施の形態の効果）
上記した第３の実施の形態によれば、接合用パターン４２のパターン部４２Ａ内に補強部４２Ｂが埋設されているため、膜厚の大なる接合用パターン４２を形成しても第１の実施の形態と同様にパターン部４２Ａのだれ発生を防止し、パターンの剥がれや導電不良を防ぐことができる。このため、パターン部４２Ａの厚さを比較的大きい寸法に設定することができ、高出力型のＬＥＤ素子（発光素子）における十分な電力供給構造を得ることができる。
(Effect of the third embodiment)
According to the third embodiment described above, since the reinforcing portion 42B is embedded in the pattern portion 42A of the bonding pattern 42, the first embodiment is performed even if the bonding pattern 42 having a large film thickness is formed. Similarly to the embodiment, it is possible to prevent the sagging of the pattern portion 42A and to prevent peeling of the pattern and poor conductivity. For this reason, the thickness of the pattern part 42A can be set to a relatively large dimension, and a sufficient power supply structure in a high-power LED element (light emitting element) can be obtained.
また、第３の実施の形態では、凸部３００の底面がビアパターン４０３と接続された回路パターン４Ｂと接続されているので、実装用基板４の裏面側にＬＥＤ素子３の発光に伴う熱を効率良く伝えることができ、放熱性に優れる。なお、熱伝導性を高めるために凸部３００の底面と実装用基板４の表面にＡｕのフラッシュめっきによるめっき層又はＡｕ−Ｓｎ半田層を設け、このめっき層又はＡｕ−Ｓｎ半田層形成部分に半田リフローによる凸部３００と実装用基板４との半田接合を行うことがより好ましい。また、半田接合に代えてＡｇペーストで凸部３００と実装用基板４とを接合しても良い。 In the third embodiment, since the bottom surface of the convex portion 300 is connected to the circuit pattern 4B connected to the via pattern 403, the heat associated with the light emission of the LED element 3 is applied to the back surface side of the mounting substrate 4. It can transmit efficiently and has excellent heat dissipation. In order to improve thermal conductivity, a plating layer or Au—Sn solder layer by Au flash plating is provided on the bottom surface of the convex portion 300 and the surface of the mounting substrate 4, and this plating layer or Au—Sn solder layer forming portion is provided. It is more preferable to perform solder bonding between the convex portion 300 and the mounting substrate 4 by solder reflow. Further, instead of solder bonding, the convex portion 300 and the mounting substrate 4 may be bonded with Ag paste.
（第４の実施の形態）
図７は、本発明の第４の実施の形態に係る接合用パターンの構造を備えた発光装置を説明するために示す断面図である。図７において、図１と同一の部材については同一の符号を付し、詳細な説明は省略する。
(Fourth embodiment)
FIG. 7 is a cross-sectional view for explaining a light emitting device having a bonding pattern structure according to the fourth embodiment of the present invention. 7, the same members as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
図７に示すように、第４の実施の形態に示す発光装置５１は、放熱用経路のみに配置された接合用パターン５２を備えた点に特徴がある。 As shown in FIG. 7, the light emitting device 51 shown in the fourth embodiment is characterized in that it includes a bonding pattern 52 disposed only in a heat dissipation path.
このため、接合用パターン５２のパターン部５２Ａは、素子搭載基板６の第４配線パターン１８に接続され、Ａｇ等の高熱伝導性材料によって形成されている。パターン部４２Ａの材料としては、Ａｇの他に、Ａｇ−Ｐｔ合金やＡｕが用いられる。パターン部５２Ａの厚さは、後述する凹部４００の深さに応じて適宜設定される。接合用パターン５２の補強部５２Ｂは、円柱状のガラス等からなり、素子搭載基板６の第４配線パターン１８に縦横方向に複数個並列して配置されている。 For this reason, the pattern portion 52A of the bonding pattern 52 is connected to the fourth wiring pattern 18 of the element mounting substrate 6 and is formed of a highly thermally conductive material such as Ag. As a material of the pattern portion 42A, Ag—Pt alloy or Au is used in addition to Ag. The thickness of the pattern portion 52A is appropriately set according to the depth of the recess 400 described later. The reinforcing portions 52 </ b> B of the bonding pattern 52 are made of columnar glass or the like, and a plurality of reinforcing portions 52 </ b> B are arranged in parallel in the vertical and horizontal directions on the fourth wiring pattern 18 of the element mounting substrate 6.
実装用基板４は、熱伝導性に優れる金属材料からなるグランド層４０１が積層されており、発光装置１の実装面には、放熱用経路に位置し、かつ接合用パターン５２に接続する接触面４００Ａを有する凹部４００が設けられている。この凹部４００の接触面４００Ａにはグランド層４０１が露出しており、接合用パターン５２が半田接合されている。 The mounting substrate 4 is formed by laminating a ground layer 401 made of a metal material having excellent thermal conductivity. The mounting surface of the light emitting device 1 is located on the heat dissipation path and is connected to the bonding pattern 52. A recess 400 having 400A is provided. The ground layer 401 is exposed on the contact surface 400A of the recess 400, and the bonding pattern 52 is soldered.
（第４の実施の形態の効果）
上記した第４の実施の形態によれば、接合用パターン５２のパターン部５２Ａ内には補強部５２Ｂが埋設されているため、膜厚の大なる接合用パターン５２を形成しても第１及び第２の実施の形態と同様にパターン部５２Ａのだれ発生を防止し、パターンの剥がれや放熱不良を防ぐことができる。このため、パターン部５２Ａの厚さを比較的大きい寸法に設定することができ、高出力型のＬＥＤ素子（発光素子）における十分な放熱構造を得ることができる。
(Effect of the fourth embodiment)
According to the fourth embodiment described above, since the reinforcing portion 52B is embedded in the pattern portion 52A of the bonding pattern 52, the first and second bonding patterns 52 are formed even if the bonding pattern 52 having a large film thickness is formed. As in the second embodiment, the occurrence of sagging of the pattern portion 52A can be prevented, and peeling of the pattern and poor heat dissipation can be prevented. For this reason, the thickness of the pattern part 52A can be set to a relatively large dimension, and a sufficient heat dissipation structure in the high-power LED element (light emitting element) can be obtained.
また、実装用基板４に積層されたグランド層４０１に接合用パターン５２が半田接合されているので、グランド層４０１にＬＥＤ素子３の発光に伴う熱を逃がすことができ、放熱性に優れる。 Further, since the bonding pattern 52 is solder-bonded to the ground layer 401 laminated on the mounting substrate 4, heat associated with light emission of the LED element 3 can be released to the ground layer 401, and the heat dissipation is excellent.
以上、本発明の発光装置を上記の実施の形態に基づいて説明したが、本発明は上記の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能であり、例えば次に示すような変形も可能である。 As mentioned above, although the light-emitting device of this invention was demonstrated based on said embodiment, this invention is not limited to said embodiment, It implements in a various aspect in the range which does not deviate from the summary. For example, the following modifications are possible.
（１）各実施の形態では、素子搭載基板６にビアパターン２２〜２４を形成し、これらビアパターン２２〜２４を介してＬＥＤ素子３と接合用パターンとが接続される場合について説明したが、本発明はこれに限定されず、図８に示すように素子搭載基板６の表裏両面及び側面にかけて回路パターン６１を形成し、この回路バターン６１を介して接合用パターン１００とＬＥＤ素子３（図１に示す）とを接続することも可能である。 (1) In each embodiment, although the via patterns 22-24 were formed in the element mounting substrate 6, and the LED element 3 and the pattern for joining were connected via these via patterns 22-24, it demonstrated. The present invention is not limited to this, and as shown in FIG. 8, a circuit pattern 61 is formed on both the front and back surfaces and side surfaces of the element mounting substrate 6, and the bonding pattern 100 and the LED element 3 (FIG. 1) are formed via the circuit pattern 61. Can also be connected.
（２）各実施の形態では、ＬＥＤ素子２から発せられる光（青色光）を受けて励起されることにより黄色の波長変換光を発する蛍光体９を用いる場合について説明したが、本発明はこれに限定されず、紫外ＬＥＤ素子から発せられる紫色光（波長３７０〜３９０ｎｍ）を受けて励起されることにより白色の波長変換光を発する蛍光体９であってもよい。 (2) In each embodiment, the case where the phosphor 9 that emits yellow wavelength-converted light by being excited by receiving light (blue light) emitted from the LED element 2 has been described. The phosphor 9 that emits white wavelength-converted light by receiving violet light (wavelength 370 to 390 nm) emitted from the ultraviolet LED element and being excited may be used.
１，４１，５１…発光装置、２…パッケージ、３…ＬＥＤ素子、４…実装用基板、４Ｂ…回路パターン、５…ケース、５ａ…傾斜面、６…素子搭載基板、８…封止部材、９…蛍光体、１０…サブマウント、１０Ａ…第１パターン部、１０Ｂ…第２パターン部、１１…第１配線パターン、１２，１３…ボンディングワイヤ、１４，１５…第２配線パターン、１６，１７…第３配線パターン、１８…第４配線パターン、１９〜２１…ビアホール、２２〜２４…ビアパターン、３０…接着剤、４２，５２，１００，１０１…接合用パターン、４２Ａ，４５Ａ，１００Ａ，１０１Ａ…パターン部、４２Ｂ，５２Ｂ，１００Ｂ，１０１Ｂ…補強部、６１…回路パターン、３００…凸部、４００…凹部，４００Ａ…接触面、４０１…グランド層、４０２…ビアホール、４０３…ビアパターン、Ｍ…ハードマスク、ｍ…貫通孔、Ｐ…ガラスペースト DESCRIPTION OF SYMBOLS 1,41,51 ... Light-emitting device, 2 ... Package, 3 ... LED element, 4 ... Mounting substrate, 4B ... Circuit pattern, 5 ... Case, 5a ... Inclined surface, 6 ... Element mounting substrate, 8 ... Sealing member, DESCRIPTION OF SYMBOLS 9 ... Phosphor, 10 ... Submount, 10A ... 1st pattern part, 10B ... 2nd pattern part, 11 ... 1st wiring pattern, 12, 13 ... Bonding wire, 14, 15 ... 2nd wiring pattern, 16, 17 ... 3rd wiring pattern, 18 ... 4th wiring pattern, 19-21 ... Via hole, 22-24 ... Via pattern, 30 ... Adhesive, 42, 52, 100, 101 ... Pattern for joining, 42A, 45A, 100A, 101A ... Pattern part, 42B, 52B, 100B, 101B ... Reinforcement part, 61 ... Circuit pattern, 300 ... Convex part, 400 ... Concave part, 400A ... Contact surface, 401 ... Ground layer, 402 ... Via hole, 403 ... via pattern, M ... hard mask, m ... through hole, P ... glass paste
Claims (9)
前記接合用パターンは、前記素子搭載基板の素子搭載面の裏面に形成されたパターン部と、前記パターン部内に埋設された補強部とからなることを特徴とする接合用パターンの構造。 A structure of a bonding pattern disposed on an element mounting substrate on which a light emitting element is mounted,
The bonding pattern structure includes a pattern portion formed on a back surface of an element mounting surface of the element mounting substrate, and a reinforcing portion embedded in the pattern portion.
前記ケース内に収容された発光素子と、
前記ケース内に充填されて前記発光素子を封止する封止部材とを備えた発光装置において、
請求項１乃至７のいずれかに記載の接合用パターンの構造を備えたことを特徴とする発光装置。 A package having a case opening on the light extraction side;
A light emitting device housed in the case;
In a light emitting device provided with a sealing member filled in the case and sealing the light emitting element,
A light-emitting device comprising the bonding pattern structure according to claim 1.
前記素子搭載基板の素子搭載面の裏面に補強部を配置する工程と、
前記補強部の周囲にパターン部を形成する工程とを含むことを特徴とする接合用パターンの形成方法。 A method for forming a bonding pattern disposed on an element mounting substrate on which a light emitting element is mounted,
Arranging a reinforcing portion on the back surface of the element mounting surface of the element mounting substrate;
And a step of forming a pattern portion around the reinforcing portion.
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