JP2009059883A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2009059883A
JP2009059883A JP2007225694A JP2007225694A JP2009059883A JP 2009059883 A JP2009059883 A JP 2009059883A JP 2007225694 A JP2007225694 A JP 2007225694A JP 2007225694 A JP2007225694 A JP 2007225694A JP 2009059883 A JP2009059883 A JP 2009059883A
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Prior art keywords
pattern
electrode
glass
light emitting
led
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JP2007225694A
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JP2009059883A5 (en
Inventor
Katsunori Arakane
Yoshinobu Suehiro
Koji Takaku
Seiji Yamaguchi
誠治 山口
好伸 末広
浩二 田角
克学 荒金
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Toyoda Gosei Co Ltd
豊田合成株式会社
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Priority to JP2007225694A priority Critical patent/JP2009059883A/en
Publication of JP2009059883A publication Critical patent/JP2009059883A/en
Publication of JP2009059883A5 publication Critical patent/JP2009059883A5/ja
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device capable of reducing a size of a substrate while mounting a plurality of light emitting elements. <P>SOLUTION: The light emitting device comprises LED elements 2, an element mounting substrate 3 for mounting the LED elements 2, a surface pattern 4 discontinuously formed on the element mounting substrate 3 and bump-joined with the LED elements 2, an electrode pattern 5 formed on a rear surface as a mounting surface of the element mounting substrate 3 on an external circuit and electrically connected to electrodes of the plurality of the LED elements 2, a heat radiation pattern 6 formed on the rear surface of the element mounting substrate 3, and a glass sealing part 10 for sealing the LED elements 2 and the surface pattern 4 on the element mounting substrate 3. The heat radiation pattern 6 is formed on the rear surface of the element mounting substrate 3 so as to include joint parts where the plurality of the LED elements 2 are connected to the surface pattern 4 through Au bumps 7. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device in which a light emitting element on a mounting portion is sealed with glass.

  2. Description of the Related Art Conventionally, in a light emitting device using a light emitting element such as a light emitting diode (LED) as a light source, a plate glass is bonded to a substrate on which a plurality of light emitting elements are flip-mounted by hot press processing, whereby the light emitting element The light-emitting device which implement | achieved glass sealing of this is proposed by this inventor (for example, refer patent document 1). In the light emitting device described in Patent Document 1, since the thermal expansion coefficients of the substrate and the sealing glass are equal, after bonding at high temperature, adhesion failure such as peeling and cracking hardly occurs even at room temperature or low temperature. It has a configuration.

In addition, a light-emitting device has been proposed in which a substrate electrode and an n-side electrode and a p-side electrode of a light-emitting element are joined via bumps (for example, see Patent Document 2). The light emitting device described in Patent Document 2 uses a metal and an alloy that do not short-circuit a metal such as a bump when the glass is heated to be softened.
JP 2006-108621 A JP 2006-156668 A

  However, in the conventional light emitting device, if the substrate size is reduced in order to reduce the manufacturing cost, the heat dissipating area of the heat generated by the light emission of the light emitting element also decreases as the size is reduced, and the heat dissipation performance decreases. Therefore, there is a problem that the light emission output of the light emitting element is reduced. In addition, it is important to ensure heat dissipation even in order to achieve high brightness, and various attempts have been made to appropriately provide a heat dissipation structure that promotes heat dissipation to the outside while securing a wiring structure to the light emitting element on the substrate. Has been made. In flip mounting of a light emitting element, three or more bumps are provided and bonded to a wiring pattern on a substrate for stable arrangement of the light emitting element. There is a problem that it is difficult to achieve both the necessary wiring structure and the heat dissipation structure.

  Accordingly, an object of the present invention is to provide a light-emitting device capable of realizing a reduction in substrate size while being able to mount a plurality of light-emitting elements.

  In order to achieve the above object, in the present invention, a plurality of two-point junction light emitting elements each having a first electrode and a second electrode, and the first electrode and the second electrode provided on a first surface. A surface pattern on which the plurality of light emitting elements are mounted so that the electrodes are arranged in the same direction, and a second surface which is a surface opposite to the first surface, the first electrode and A heat dissipating pattern provided so as to include a junction with the surface pattern of the second electrode, and electrically connected to the surface pattern provided on the first surface provided on the second surface; An element mounting substrate having a pair of electrode patterns symmetrically disposed adjacent to the heat dissipation pattern, and a glass sealing portion for sealing the first surface including the plurality of light emitting elements on the surface pattern And a light emitting device characterized by comprising: That.

  According to the light emitting device, the heat radiation path can be secured by including the joint portion of the plurality of light emitting elements mounted on the first surface of the element mounting substrate within the formation range of the heat radiation pattern provided on the second surface. By arranging the pair of electrode patterns symmetrically adjacent to the heat radiation pattern, a wiring structure necessary for supplying power to the light emitting element can be ensured.

  In the light emitting device, the element mounting substrate is formed in a square shape and is joined to the first electrode and the second electrode of the plurality of light emitting elements arranged in a square lattice pattern on the first surface. The heat radiation pattern formed in a rectangular shape having a long side so as to be parallel to the arrangement direction of the first electrode and the second electrode, It is preferable to have the pair of electrode patterns provided on the second surface and symmetrically provided in a direction orthogonal to the arrangement direction of the first electrode and the second electrode with the heat radiation pattern as a center. .

  In the light emitting device, the plurality of light emitting elements may have the same mounting direction of the light emitting elements.

  In the light-emitting device, the plurality of light-emitting elements may be mounted on the surface pattern so that the first electrode and the second electrode of each light-emitting element are arranged on one line.

  In the light-emitting device, the plurality of light-emitting elements are preferably connected in series by joining the first electrode and the second electrode on the surface pattern formed in a discontinuous manner.

  In the light-emitting device, the light-emitting element may be configured by arranging the first electrode and the second electrode in a direction parallel to a side surface of the element.

  In the light emitting device, the light emitting element may be configured by arranging the first electrode and the second electrode in a diagonal direction.

  In the light emitting device, the electrode pattern may be formed in a shape having rotational symmetry with respect to the heat dissipation pattern.

  In the light emitting device, the surface pattern preferably has a surface layer made of Ag.

  In the above light emitting device, the glass sealing portion may be made of a rectangular parallelepiped glass containing a phosphor.

  In order to achieve the above object, in the present invention, a plurality of two-point junction type light emitting elements having a first electrode and a second electrode, and the first electrode and the first electrode provided on a first surface are provided. A surface pattern on which the plurality of light emitting elements are mounted so that the second electrodes are arranged in the same direction, and a second surface which is a surface opposite to the first surface, are provided on the first surface. A heat dissipation pattern provided so as to include a junction between the electrode and the surface pattern of the second electrode, and electrically connected to the surface pattern provided on the second surface and provided on the first surface And a glass seal that seals the first surface including the plurality of light emitting elements on the surface pattern, and an element mounting substrate having a pair of electrode patterns symmetrically disposed adjacent to the heat radiation pattern A glass-sealed LED including a stopper and the glass Is the electrode pattern electrically connected provided in the element mounting substrate of the stop LED, the light emitting device is provided, characterized in that it comprises a metal substrate which is the heat radiation pattern in thermal bonding.

  According to this light-emitting device, electricity is supplied to the light-emitting element mounted on the surface pattern provided on the element-mounting substrate of the glass-sealed LED, and heat generated due to light emission of the light-emitting element is performed through the metal substrate. Thus, it is possible to realize a stable operation of the high-luminance glass-sealed LED with excellent element mountability.

  In the light emitting device, the metal substrate may be made of aluminum.

  In the light emitting device, the metal substrate may be made of copper or a copper alloy.

  In the light emitting device, the metal substrate may be one in which the electrode pattern of the glass-sealed LED is bonded to a wiring layer formed on a metal surface via an insulating layer.

  In the light emitting device, the metal substrate may be one in which the heat dissipation pattern of the glass-sealed LED is bonded to a heat dissipation layer formed on a metal surface via an insulating layer.

  In the light emitting device, the metal substrate may be one in which the heat dissipation pattern is bonded to a surface where a metal surface is exposed.

  According to the present invention, it is possible to reduce the substrate size while enabling mounting of a plurality of light emitting elements.

  FIG. 1 is a perspective view of a glass-sealed LED which is a light-emitting device showing a first embodiment of the present invention.

  As shown in FIG. 1, the glass-sealed LED 1 includes a plurality of LED elements 2 as light emitting elements made of a flip-chip GaN-based semiconductor material, and an element mounting substrate as a mounting portion on which the plurality of LED elements 2 are mounted. 3, a surface pattern 4 for supplying power to the plurality of LED elements 2 formed on the surface to be an element mounting surface of the element mounting substrate 3, and a back surface to be a mounting surface to the external circuit of the element mounting substrate 3 The electrode pattern 5 electrically connected to the electrodes of the plurality of LED elements 2, the heat radiation pattern 6 formed on the back surface of the element mounting substrate 3, and the LED elements 2 and the surface pattern 4 are arranged on the element mounting substrate 3. And a glass sealing portion 10 to be sealed.

  FIG. 2 is a plan view of the glass-sealed LED according to the first embodiment of the present invention. In FIG. 2, for ease of explanation, the glass sealing portion provided on the element mounting substrate 3 is not shown, and the LED element 2 is shown with respect to the outer shape and the position of the Au bump.

The LED element 2 as a light emitting element is obtained by epitaxially growing a group III nitride semiconductor on the surface of a growth substrate made of sapphire (Al 2 O 3 ), whereby a buffer layer, an n-type layer, an MQW layer, p The mold layer is formed in this order. The LED element 2 is epitaxially grown at 700 ° C. or higher, and has a heat resistant temperature of 600 ° C. or higher, which is stable with respect to a processing temperature in a sealing process using a low-melting-point heat-sealing glass described later. The LED element 2 includes a p-side electrode provided on the surface of the p-type layer and a p-side pad electrode formed on the p-side electrode, and a part thereof is etched from the p-type layer to the n-type layer. The n-side electrode is formed on the exposed n-type layer. The LED element 2 of the present embodiment has a configuration in which one p-side pad electrode and one n-side electrode are provided, and the p-side pad electrode and the n-side electrode are arranged in a direction parallel to the side surface of the element. .

The LED element 2 has a thickness of 100 μm and a 346 μm square, and has a thermal expansion coefficient of 7 × 10 −6 / ° C. Here, although the thermal expansion coefficient of the GaN layer of the LED element 2 is 5 × 10 −6 / ° C., the thermal expansion coefficient of the growth substrate made of sapphire occupying most is 7 × 10 −6 / ° C., The thermal expansion coefficient of the LED element 2 body is equal to the thermal expansion coefficient of the growth substrate. In addition, in each figure, in order to clarify the structure of each part of the LED element 2, each part is shown by the size different from an actual size. When a voltage is applied to the p-side pad electrode and the n-side electrode, blue light having a peak wavelength of, for example, 460 nm is emitted from the MQW layer of the LED element 2.

The element mounting substrate 3 is made of a polycrystalline sintered material of alumina (Al 2 O 3 ), is formed in a 2.6 mm square with a thickness of 0.25 mm, and has a thermal expansion coefficient α of 7 × 10 −6 / ° C. It is. As shown in FIG. 2, the element mounting substrate 3 has a surface pattern 4 formed on the front surface and connecting a plurality of LED elements 2 in series, and an electrode pattern 5 and a heat radiation pattern 6 formed on the back surface. is doing. The surface pattern 4 includes a W layer patterned in accordance with the electrode shape of the LED element 2, a thin film Ni layer covering the surface of the W layer, and a thin film Ag layer covering the surface of the Ni layer. It is out. The electrode pattern 5 and the heat radiation pattern 6 provided on the back surface of the element mounting substrate 3 also have the same layer structure as the surface pattern 4, except that a thin Au layer is provided on the surface. The electrode pattern 5 is provided outside the back surface of the element mounting portion 40 on which the plurality of LED elements 2 are mounted, and is electrically connected to the surface pattern 4 by a through hole 42 penetrating the element mounting substrate 3 in the thickness direction. Has been. A heat radiation pattern 6 is provided on the back surface of the element mounting portion 40 and is formed so as to dissipate heat generated by light emission of the LED element 2.

  The heat radiation pattern 6 is formed on the back surface of the element mounting substrate 3 so as to include a joint portion where the plurality of LED elements 2 are connected to the surface pattern 4 via the Au bumps 7. It is formed in a rectangular shape having long sides so as to be parallel to the arrangement direction of the bump bonding portion. The electrode pattern 5 symmetrically forms a pair of electrode patterns 5 corresponding to the cathode side and the anode side in a direction perpendicular to the arrangement direction of the LED elements 2 with the heat radiation pattern 6 as the center. Thereby, the element mounting substrate 3 has a configuration in which a heat dissipation path provided in the center on the back surface and a wiring structure for supplying power to the LED element 2 are provided on both sides of the heat dissipation path.

  The surface pattern 4 has element mounting patterns 40A to 40C formed in a broken line shape, and is provided so that the mounting direction of the LED elements 2 and the electrode arrangement direction are the same between the element mounting patterns 40A to 40C. It is connected so as to be folded back at the folded-back portion 40E with a straight line portion 40D interposed therebetween. The broken-line element mounting patterns 40 </ b> A to 40 </ b> C are discontinuous in the pattern length direction and have a size larger than the bonding width of the Au bump 7. Accordingly, the nine LED elements 2 mounted on the surface of the element mounting substrate 3 are mounted on the element mounting substrate 3 in a square lattice pattern based on the pattern shapes of the element mounting patterns 40A, 40B, and 40C. The arrangement directions of the p-side pad electrode and the n-side electrode are all the same direction. Further, with respect to the mounting position of the LED element 2 that is joined at two points on the same line by the Au bump 7, the positional displacement with respect to the extending direction of the element mounting patterns 40A to 40C is allowed within a certain range, and the total area becomes small. It is formed as follows. In the vicinity of one of the through holes 42, an identification portion 41 is provided for positioning when mounting the LED element.

The glass sealing portion 10 is made of ZnO—B 2 O 3 —SiO 2 —Nb 2 O 5 —Na 2 O—Li 2 O-based heat fusion glass. The composition of the glass is not limited to this. For example, the heat-sealing glass may not contain Li 2 O, or may contain ZrO 2 , TiO 2 or the like as an optional component. Good. As shown in FIG. 1, the glass sealing portion 10 is formed in a rectangular parallelepiped shape on the element mounting substrate 3, and the thickness from the element mounting substrate 3 is 0.7 mm. The side surface 10 a of the glass sealing part 10 is formed by cutting a plate glass bonded to the element mounting substrate 3 by hot pressing together with the element mounting substrate 3 with a dicer. Moreover, the upper surface 10b of the glass sealing part 10 is one surface of the plate glass bonded to the element mounting substrate 3 by hot pressing. This heat-sealing glass has a glass transition temperature (Tg) of 490 ° C. and a yield point (At) of 520 ° C., and the glass transition temperature (Tg) is sufficiently higher than the formation temperature of the epitaxial growth layer of the LED element 2. It is low. Moreover, the coefficient of thermal expansion (α) at 100 ° C. to 300 ° C. of the heat-fusible glass is 6 × 10 −6 / ° C. When the thermal expansion coefficient (α) exceeds the glass transition temperature (Tg), a larger numerical value is obtained. As a result, the heat-sealing glass is bonded to the element mounting substrate 3 at about 600 ° C. and can be hot pressed. Moreover, the refractive index of the heat sealing | fusion glass of the glass sealing part 10 is 1.7.

FIG. 3 is a cross-sectional view of the glass-sealed LED taken along line AA in FIG.
In the glass sealing portion 10, the phosphor 11 is dispersed, and the LED element 2 mounted at the pitch L1 on the element mounting pattern 40B of the surface pattern 4 composed of the W layer 4a, the Ni layer 4b, and the Ag layer 4c. Is sealed with glass. The phosphor 11 is a yellow phosphor that emits yellow light having a peak wavelength in a yellow region when excited by blue light emitted from the MQW layer of the LED element 2. In the present embodiment, a YAG (Yttrium Aluminum Garnet) phosphor is used as the phosphor 11. The phosphor 11 has an average particle diameter of 10 μm and is contained in the glass sealing part 10 by 2.2% by weight. The phosphor 11 may be a silicate phosphor or a mixture of YAG and silicate phosphor at a predetermined ratio.

The composition of the heat-sealing glass is arbitrary as long as the glass transition temperature (Tg) is lower than the heat resistant temperature of the LED element 2 and the coefficient of thermal expansion (α) is equivalent to that of the element mounting substrate 3. Examples of the glass having a relatively low glass transition temperature and a relatively low coefficient of thermal expansion include, for example, a ZnO—SiO 2 —R 2 O system (where R is at least one selected from Group I elements such as Li, Na, and K). ) Glass, phosphate glass and lead glass. Of these glasses, ZnO—SiO 2 —R 2 O glass is preferable because it has better moisture resistance than phosphoric acid glass and does not cause environmental problems like lead glass. is there.

  FIGS. 4A and 4B show an element mounting board before LED element mounting in the first embodiment, FIG. 4A is a plan view showing a back surface of the board, and FIG. 4B is a partially enlarged view of FIG. is there. This element mounting substrate 30 is a substrate before being divided into individual glass-sealed LEDs, and a pair of electrode patterns 5 and one heat radiation pattern 6 formed wider than the pair of electrode patterns 5 are sealed with glass. 121 patterns are formed as one stop LED. A surface pattern 4 on which the LED element 2 is mounted is provided on the surface side (not shown).

  FIG. 5 is a partially enlarged view showing a state in which LED elements are mounted on the surface of the element mounting substrate before division. The element mounting substrate 30 on which the plurality of LED elements 2 are mounted is divided into individual glass-sealed LEDs 1 after being glass-sealed by hot pressing of the sealing glass.

A method for manufacturing the glass-sealed LED 1 will be described below.
An element mounting substrate 30 in which the through holes 42 are formed is prepared, and W paste is screen printed on the surface of the element mounting substrate 30 according to the surface pattern. Next, the element mounting substrate 30 on which the W paste is printed is heat-treated at a temperature of about 1000 ° C. to burn W on the element mounting substrate 30, and further, Ni is plated on W. Forms the surface pattern 4 by applying Au plating.

  Next, the plurality of LED elements 2 are electrically joined by the Au bumps 7 to the surface pattern 4 formed on the surface of the element mounting substrate 30. In the present embodiment, bump bonding is performed at a total of two points, one point on the p side and one point on the n side.

  Then, the element mounting substrate 30 on which each LED element 2 is mounted is set in the lower mold, and the plate-like heat-sealing glass is set in the upper mold. The phosphor is dispersed in advance in the plate-like heat-sealed glass. A heater is disposed in each of the lower mold and the upper mold, and the temperature is adjusted independently in each mold. Next, each mold is moved, a plate-like heat-sealing glass is stacked on the surface (mounting surface) of the substantially flat element mounting substrate 30, and the lower mold and the upper mold are pressurized while being heated, so that nitrogen is added. Perform hot pressing in an atmosphere. As a result, the plate-like heat-sealing glass is bonded to the element mounting substrate 30 on which the LED elements 2 are mounted, and the LED elements 2 are sealed on the element mounting substrate 30 with the heat-sealing glass. Hot pressing may be performed in an inert atmosphere with respect to each member, and may be performed in, for example, a vacuum in addition to a nitrogen atmosphere. As a result, the heat-fusible glass is bonded to the element mounting substrate 30 via the oxide contained therein.

  Through the above steps, an intermediate body in which a plurality of glass-sealed LEDs 1 are connected vertically and horizontally is produced. Thereafter, the element mounting substrate 30 integrated with the glass sealing portion 10 is set on a dicer and diced to divide each glass-sealed LED 1. In addition, the division | segmentation method of each glass-sealed LED1 is arbitrary, For example, you may make it divide | segment using a laser.

  In the glass-sealed LED 1 configured as described above, when a voltage is applied to the LED element 2 through the pair of electrode patterns 5, blue light is emitted from the nine LED elements 2. A part of the blue light is converted to yellow by the phosphor 11, and white light by a combination of blue and yellow is extracted from the glass sealing portion 10. According to this glass-sealed LED 1, the plurality of LED elements 2 are arranged in a square lattice pattern on the element mounting portion 40 on the first surface of the element mounting substrate 3, and the arrangement direction of the p-side pad electrode and the n-side electrode is Since it is mounted on the element mounting patterns 40A to 40C constituting the surface pattern 4 so as to be all in the same direction, a uniform light distribution of the light emitted from the plurality of LED elements 2 is obtained, and a square lattice shape is obtained. Since the plurality of LED elements 2 arranged in the same manner are sealed by the rectangular parallelepiped phosphor-containing glass sealing portion 10, excitation unevenness of the phosphor 11 does not occur, and color unevenness can be reduced.

  Further, the heat generated due to the light emission of the plurality of LED elements 2 is transmitted to the heat radiation pattern 6 provided on the back surface of the element mounting substrate 3 through the joint portion of the Au bump 7, and to the outside through the heat radiation pattern 6. Heat is dissipated.

  Thus, the element mounting patterns 40A to 40C in the element mounting part 40 are formed in a broken line shape, and the two-point junction type LED element 2 is mounted on one line across the discontinuous portions of the element mounting patterns 40A to 40C. Therefore, even if the LED element 2 is misaligned with respect to the length direction of the pattern when the element is mounted, the electrical bondability is not impaired and the mass productivity can be improved. Further, since the heat dissipation structure and the wiring structure are provided independently on the back surface of the element mounting substrate 3 while arranging the plurality of LED elements 2 in a square lattice pattern, the heat dissipation pattern 6 can be achieved even if the element mounting substrate 3 is downsized. An effective heat radiation area can be ensured. In addition, when a two-point junction type LED element 2 having a rectangular shape or the like is mounted instead of the square LED element 2 described above, a degree of freedom for element mounting can be provided.

  In addition, positioning control for mounting the LED elements 2 on the element mounting patterns 40A to 40C of the element mounting substrate 3 can be applied uniformly to all the LED elements 2, and there can be no variation in element mounting accuracy.

  Moreover, since the sealing material of the LED element 2 is glass, the sealing material is not deteriorated by heat generated by light emission of the LED element 2 as in the case where the sealing material is a resin. A relatively large current can be allowed to flow through the LED element 2 without considering deterioration of the LED.

  Further, by providing the Ag layer 4c on the surface layer of the surface pattern 4, the metal reflection absorption loss at the emission wavelength of the LED element 2 can be reduced as compared with the case where Au is provided on the surface layer. Although Ag has a problem of causing blackening by reacting with moisture containing sulfur-based odorous substances in the air, ozone and sulfur dioxide, in the glass-sealed LED 1 of this embodiment, the element mounting substrate 3 and glass-sealed. Since it has strong bondability that does not cause peeling due to the difference in thermal expansion coefficient of the portion 10, moisture or air does not enter the interface between the element mounting substrate 3 and the glass sealing portion 10, and the Ag layer 4c is used as the surface layer. The surface pattern 4 does not change over a long period of time. Thereby, good light reflectivity is maintained. Further, even if the surface pattern 4 is formed in a size equivalent to the width of the Au bump 7, since the metal reflection absorption loss is small, it is excellent in the reflection of light emitted from the LED element 2 to the substrate side, and the light extraction property. In addition, it is excellent in cost saving due to the fact that the formation area of the surface pattern 4 can be reduced.

Moreover, since ZnO—B 2 O 3 —SiO 2 —Nb 2 O 5 —Na 2 O—Li 2 O-based heat-sealing glass was used as the glass sealing portion 10, the stability of the glass sealing portion 10 and The weather resistance can be improved. Accordingly, even when the glass-sealed LED 1 is used over a long period of time in a harsh environment or the like, the deterioration of the glass-sealed portion 10 is suppressed, and the temporal decrease in light extraction efficiency is effectively suppressed. be able to. Furthermore, since the glass sealing part 10 has a high refractive index and a high transmittance characteristic, it is possible to realize both high reliability and high light emission efficiency.

  In addition, for glass, a refractive index of n = 1.6 or more, which is difficult with a transparent resin material, can be selected. Further, as an LED element 2, an LED element using a GaN substrate as the same refractive index member as that of a light emitting layer epitaxially grown with GaN is used. By selecting, the light emitted in the LED element 2 can be efficiently incident on the glass. And since the refractive index n of glass is 1.6 or more, what tends to contain light in glass can be radiated outside as much as possible.

  Moreover, since glass has a thermal conductivity that is 10 times or more superior to that of transparent resin, it is possible to radiate heat generated from the glass-sealed LED element 2 from the glass surface to the atmosphere.

  Moreover, in this embodiment, since plate-shaped glass can be collectively sealed with respect to the plurality of LED elements 2, the glass-sealed LED 1 having the plurality of LED elements 2 can be easily mass-produced by dicer cutting. In addition, since heat-sealing glass is processed in a highly viscous state, it is not necessary to take measures to prevent the material from flowing out like a sealing resin.

  Moreover, the LED element 2 can be flip-mounted to form a small and high-brightness glass-sealed LED 1 in which nine LED elements 2 are mounted in a 2.6 mm square area. This is because the glass sealing portion 10 and the element mounting substrate 3 having the same thermal expansion coefficient are selected without using a wire bonding space, and a small space is obtained by the strong bonding at the interface based on the chemical bond. This is because no interfacial delamination occurs even with adhesion at.

  Furthermore, since the thermal expansion coefficients of the LED element 2 and the glass sealing part 10 are equivalent, the thermal expansion coefficients of the members including the element mounting substrate 3 are equivalent, and in the temperature difference between the high temperature processing and normal temperature in glass sealing. However, the internal stress is extremely small, and stable workability without causing cracks can be obtained. In addition, since the internal stress can be reduced, the glass-sealed LED 1 is excellent in reliability with no bump peeling even when flip mounting is performed using two-point bumps. The fact that bump peeling does not occur even when flip mounting is performed using two-point bumps is the same as when glass sealing with alkoxide is performed instead of low-melting glass. When an epoxy resin or silicon resin is used as the sealing material, the difference in thermal expansion coefficient from the LED element 2 or the element mounting substrate 3 becomes large, and the bump peeling or peeling at the interface of the element mounting substrate 3 due to the thermal stress based on the difference. Therefore, the above-described two-point junction type LED element 2 cannot be resin-sealed on the element mounting substrate 3. On the other hand, when the sealing material is the glass described in the present embodiment as described above, the difference in thermal expansion coefficient between the LED element 2, the element mounting substrate 3, and the glass sealing portion 10 becomes small, and bumps caused by thermal stress No peeling or peeling at the interface of the element mounting substrate 3 occurs. From this, it becomes possible to seal the two-point junction type LED element 2 while allowing the positional deviation.

  Further, in the element mounting patterns 40A to 40C on which the two-point junction type LED element 2 is mounted, the pattern formation width can be narrowed to a size equivalent to the bump diameter size. The contact area between the first surface, which is a surface, and the glass sealing portion 10 is increased, the glass adhesive strength is improved, and a preferable configuration for heat dissipation from the glass sealing portion 10 is obtained.

  In addition, by dividing the element mounting substrate 3 integrated with the glass sealing portion 10 with a dicer or the like, a small number and a large number can be collectively produced, and the glass-sealed LED 10 that is inexpensive and excellent in mass productivity can be obtained. .

  Furthermore, by using the element mounting substrate 3 made of alumina, it is possible to reduce the member cost and it is easy to obtain, so that it is possible to realize mass productivity and reduction of the apparatus cost. In addition, since alumina is excellent in thermal conductivity, it can be constructed with a margin for increasing the amount of light and increasing the output, and is optically advantageous because the light absorption of alumina is small.

  In the first embodiment, the glass-sealed LED 1 using the GaN-based semiconductor material as the LED element 2 has been described. However, the LED element is not limited to the GaN-based LED element 2, and for example, a ZnSe-based or A light emitting element made of another semiconductor material such as SiC may be used. Further, the LED element 2 may not have a peak wavelength in a blue region, but may have a peak wavelength in an ultraviolet region, a green region, a red region, or the like. Moreover, the fluorescent substance 11 may not be contained in the glass sealing part 10, and all of the light emitted from the LED element 2 may be extracted without wavelength conversion.

  Also, the number of LED elements 2 to be mounted is not limited to the above nine, and one or a plurality of LED elements 2 can be mounted within a mountable range.

  FIG. 6 is a plan view of another glass-sealed LED according to the first embodiment of the present invention. In FIG. 6, the glass sealing portion provided on the element mounting substrate 3 is not shown for ease of explanation, and the outer shape and the position of the Au bump are shown for the LED element 2. In this glass-sealed LED 1, a plurality of (9) LED elements 2 having a rectangular shape of 480 μm × 240 μm are mounted on the surface pattern 4 of the element mounting substrate 3 instead of the 346 μm square LED elements 2 shown in FIG. It is a thing. About another structure, it is the same as that of glass sealing LED1 shown in FIG.1 and FIG.2.

  FIG. 7 is a longitudinal sectional view of another glass-sealed LED according to the first embodiment shown in FIG. In this glass-sealed LED 1, since the rectangular LED element 2 is mounted, it is mounted on the element mounting pattern 40B at a pitch L2 different from the pitch L1 when mounting the LED element 2 of 346 μm square shown in FIG. ing.

  Thus, even if the LED element 2 is a rectangular LED element having a large size in the length direction of the element mounting pattern 40B formed in a broken line shape, the Au bump can be obtained by using the two-point junction type LED element 2. 7, the plurality of rectangular LED elements 2 can be mounted at a desired pitch. Further, it is possible to secure the wiring structure by the electrode pattern 5 and the effective heat radiation area by the heat radiation pattern 6.

  FIG. 8 is a plan view of a glass-sealed LED showing a second embodiment of the present invention. In the following description, the same elements as those described above are denoted by the same reference numerals, and overlapping descriptions are omitted as appropriate.

  As shown in FIG. 8, the glass-sealed LED 1 is different from that of the first embodiment in the shape of the surface pattern 4 provided on the surface of the element mounting substrate 3. The direction of the LED element 2 is different.

  The surface pattern 4 is configured by connecting element mounting patterns 40A to 40C formed in a broken line shape with respect to the length direction by a folded portion 40D. The surface pattern 4 of the LED elements 2 mounted on the element mounting patterns 40A and 40C. The electrode arrangement direction is different from the electrode arrangement direction of the LED element 2 mounted on the element mounting pattern 40B.

  FIG. 9 is a plan view showing the back surface of the element mounting board before LED element mounting in the second embodiment. In this element mounting substrate 30, the electrode pattern 5 and the heat radiation pattern 6 are arranged in a strip shape on the back surface of the substrate, and a plurality of LED elements are mounted on a surface pattern provided on the surface (not shown), and glass sealing is performed. Later, by separating the glass-sealed LEDs individually by dicing or the like, the strip-shaped electrode pattern 5 and the heat radiation pattern 6 are cut according to the size of the glass-sealed LED. Thereby, as shown in FIG. 8, the structure which arrange | positions the thermal radiation pattern 6 in the center in the back surface of the element mounting substrate 3, and a pair of electrode pattern 5 is provided in the both sides is obtained.

  FIG. 10 is a partially enlarged view showing an element mounting substrate surface after LED element mounting in the second embodiment. The element mounting substrate 30 on which the plurality of LED elements 2 are mounted is divided into individual glass-sealed LEDs 1 after being glass-sealed by hot pressing of the sealing glass.

  Even in such a configuration, since the interval between the adjacent LED elements 2 is appropriately maintained, the light loss due to absorption of light emitted from the adjacent LED elements 2 is small, and the total length of the surface pattern 4 is reduced to the first. The surface pattern 4 of the embodiment can be made smaller and cheaper. Moreover, about the preferable heat dissipation structure which radiates the heat | fever accompanying the light emission of LED element 2 via the heat dissipation pattern 6 provided in the back surface of the element mounting part 40, it is the same as that of 1st Embodiment.

  FIG. 11 is a plan view of a glass-sealed LED showing a third embodiment of the present invention. In FIG. 11, for ease of explanation, a glass sealing portion provided on the element mounting substrate 3 is not shown, and the LED element 2 is shown with respect to the outer shape and the position of the Au bump.

  As shown in FIG. 11, the glass-sealed LED 1 is provided with a surface pattern 4 having four through holes 42A and 42B penetrating in the thickness direction of the element mounting substrate 3 in the vicinity of the corner of the substrate. The through holes 42A and 42B are electrically connected to electrode patterns 5A and 5B provided on the back surface of the element mounting substrate 3. In addition, the surface pattern 4 is integrally provided with an identification portion 41 used as a positioning mark when the element is mounted in the vicinity of the through holes 42A and 42B. The surface pattern 4 is formed so that the p-side element mounting patterns 40A to 40C connected to the through-hole 42A are connected in parallel to the n-side pattern 40F connected to the through-hole 42B. Three LED elements 2 are mounted in series on each of the formed element mounting patterns 40A to 40C.

  As described above, the element mounting patterns 40A to 40C in which the plurality of LED elements 2 are mounted in series are arranged in parallel so that the electrode arrangement direction is the same and electrically connected in parallel. Therefore, the glass-sealed LED 1 having a high degree of freedom in device mounting can be obtained. In the second embodiment, the configuration in which the square LED element 2 is mounted has been described. However, it is also possible to mount the rectangular LED element 2.

  FIG. 12 is a plan view of a glass-sealed LED showing a fourth embodiment of the present invention. In FIG. 12, the glass sealing portion provided on the element mounting substrate 3 is not shown for ease of explanation, and the outer shape of the LED element 2 and the position of the Au bump are shown.

  As shown in FIG. 12, this glass-sealed LED 1 is an element described in the first embodiment of a two-point junction type square LED element 2 in which a p-side pad electrode and an n-side electrode are arranged in a diagonal direction. Nine LEDs are mounted and formed on the surface of the mounting substrate 3, whereby the LED elements 2 are mounted with an inclination of 45 degrees with respect to the element mounting patterns 40A to 40C formed in a broken line shape. .

  As described above, the two-point junction type LED element 2 in which the p-side pad electrode and the n-side electrode are arranged diagonally is also tolerant in the pattern length direction for positioning when the LED element is mounted. A glass-sealed LED 1 having a high degree of freedom in mounting property can be obtained. Further, even when the LED element 2 is mounted with an inclination with respect to the element mounting patterns 40A to 40C, the heat generated by the light emission is efficiently removed by the heat radiation pattern 6 provided on the back surface of the element mounting substrate 3. can do.

  FIG. 13 is a plan view of a glass-sealed LED showing a fifth embodiment of the present invention. In FIG. 13, the glass sealing portion for sealing the surface of the element mounting substrate 3 is not shown, and the LED element 2 is shown with respect to the outer shape and the position of the Au bump.

  As shown in FIG. 13, this glass-sealed LED 1 has a two-point junction type rectangular LED element 2 in which a p-side pad electrode and an n-side electrode are arranged on one line on the surface of a rectangular element mounting substrate 3. It is formed by mounting three and sealing the glass by hot press processing of the sealing glass. The element mounting substrate 3 has a surface pattern 4 that connects the LED elements 2 in series on the front surface, and has an electrode pattern 5 and a heat radiation pattern 6 on the back surface. The electrode pattern 5 is disposed on both sides of the heat dissipation pattern 6 provided in the center of the element mounting substrate 3 and is electrically connected to the via pattern forming portion 43 of the surface pattern 4 via the via pattern provided in the substrate thickness direction. It is connected.

  The LED element 2 has a size of 480 μm × 240 μm × 100 μm, and the long side of the LED element is arranged perpendicular to the long side direction of the element mounting substrate 3.

  The surface pattern 4 is formed discontinuously while being folded back in an L shape with respect to the length direction from one via pattern forming portion 43 to the other via pattern forming portion 43, and electrically connects the LED elements 2. The bonding portion of the Au bump 7 is formed so as to have a length in the long side direction of the element mounting substrate 3, thereby having a degree of freedom of the element bonding position.

FIG. 14 is a cross-sectional view of the glass-sealed LED taken along the line BB in FIG. The element mounting substrate 3 is made of an alumina polycrystalline sintered material, is 0.25 mm thick and is formed by 1.0 × 2.4 mm, and has a thermal expansion coefficient α of 7 × 10 −6 / ° C. The surface pattern 4 provided on the surface of the element mounting substrate 3 and the LED element 2 mounted on the element mounting portion 40 are glass-sealed by the glass sealing portion 10.

  The surface pattern 4 includes a W layer 4a patterned according to the electrode shape of the LED element 2, a thin Ni layer 4b covering the surface of the W layer 4a, and a thin Ag layer covering the surface of the Ni layer 4b. 4c. The electrode pattern 5 and the heat radiation pattern 6 provided on the back surface of the element mounting substrate 3 also have the same layer structure as the surface pattern 4, except that a thin Au layer is provided on the surface. The electrode pattern 5 is electrically connected to the surface pattern 4 by a via pattern 4 d made of W filled in a via hole 3 a formed in the element mounting substrate 3 in the via pattern forming portion 43 of the surface pattern 4.

The glass sealing portion 10 is made of ZnO—B 2 O 3 —SiO 2 —Nb 2 O 5 —Na 2 O—Li 2 O-based heat fusion glass, and is formed in a rectangular parallelepiped shape on the element mounting substrate 3. The thickness from the element mounting substrate 3 is 0.7 mm. The side surface 10 a of the glass sealing portion 10 is formed by cutting a plate glass bonded to the element mounting substrate 3 by hot press processing together with the element mounting substrate 3 with a dicer. Moreover, the upper surface 10b of the glass sealing part 10 is one surface of the plate glass bonded to the element mounting substrate 3 by hot pressing. Moreover, the refractive index of the heat sealing | fusion glass of the glass sealing part 10 is 1.7.

  Further, in the glass sealing part 10, a phosphor 11 is dispersed, and a YAG phosphor is used as the phosphor 11. The phosphor 11 has an average particle diameter of 10 μm and is contained in the glass sealing part 10 by 2.2% by weight. The phosphor 11 may be a silicate phosphor or a mixture of YAG and silicate phosphor at a predetermined ratio.

  Thus, even when the LED element 2 is mounted so that the long side direction of the element is arranged at a right angle with respect to the surface pattern 4 provided on the rectangular element mounting substrate 3, the two-point junction type By using this LED element 2, it is possible to increase the tolerance of the mounting position, and the glass-sealed LED 1 having excellent mass productivity can be obtained. In addition, the heat radiation pattern 6 provided so as to cover the electrode joint portion of the LED element 2 on the back surface of the element mounting substrate 3 can efficiently remove heat generated by light emission of the plurality of LED elements 2.

  FIG. 15 is a plan view of a glass-sealed LED showing a sixth embodiment of the present invention. In FIG. 15, a glass sealing portion for sealing the surface of the element mounting substrate 3 is not shown.

  As shown in FIG. 15, this glass-sealed LED 1 includes a two-point junction type rectangular LED element 2 in which a p-side pad electrode and an n-side electrode are arranged on one line on the surface of a rectangular element mounting substrate 3. It is formed by mounting three and sealing the glass by hot press processing of the sealing glass. The element mounting substrate 3 has a surface pattern 4 that connects the LED elements 2 in series on the front surface, and has an electrode pattern 5 and a heat radiation pattern 6 on the back surface. The electrode pattern 5 is disposed on both sides of the heat radiation pattern 6 provided in the center of the element mounting substrate 3.

  The surface pattern 4 is formed discontinuously while being folded back in an L shape in the length direction from one through hole 42 to the other through hole 42.

16 is a cross-sectional view of the glass-sealed LED in the CC section of FIG.
The electrode pattern 5 is electrically connected to the surface pattern 4 through a through hole 42 penetrating the element mounting substrate 3 in the thickness direction. About another structure, it is the same as that of glass-sealed LED1 of 5th Embodiment.

  Thus, the structure by which the surface pattern 4 and the electrode pattern 5 are electrically joined by the through hole 42 may be sufficient. Since the glass sealing portion 10 provided on the surface of the element mounting substrate 3 is hot-pressed in a high viscosity state, the glass sealing portion 10 does not flow out from the through hole 42 to the back side of the substrate, and has good bonding properties.

  FIG. 17 is a plan view of a glass-sealed LED showing a seventh embodiment of the present invention. In FIG. 17, a glass sealing portion that seals the surface of the element mounting substrate 3 is not shown.

  As shown in FIG. 17, the glass-sealed LED 1 includes a two-point junction type square LED element 2 in which a p-side pad electrode and an n-side electrode are arranged diagonally, and a surface of a rectangular element mounting substrate 3. The three are mounted and are sealed with glass by hot pressing of the sealing glass. The element mounting substrate 3 has a surface pattern 4 that connects the LED elements 2 in series on the front surface, and has an electrode pattern 5 and a heat radiation pattern 6 on the back surface.

  The surface pattern 4 is formed discontinuously while being folded back in a saw blade shape in the length direction from one via pattern forming portion 43 to the other via pattern forming portion 43.

  The electrode pattern 5 is disposed on both sides of the heat radiation pattern 6 provided in the center of the element mounting substrate 3, and the side adjacent to the parallelogram-shaped heat radiation pattern 6 provided in the center of the substrate has a predetermined angle, and A pair of electrode patterns 5 are formed so as to have rotational symmetry with respect to the heat radiation pattern 6. This predetermined angle is determined so as to include the bonding portion of the Au bump 7 in the surface pattern 4. The electrode pattern 5 is electrically connected to the via pattern forming portion 43 of the surface pattern 4 via a via pattern provided in the substrate thickness direction. The surface pattern 4 has an angle with respect to the long side of the element mounting substrate 3 so that the p-side pad electrode and the n-side electrode of the adjacent LED element 2 are connected in series. Even if a displacement occurs, it is formed so as to ensure electrical bondability. About another structure, it is the same as that of glass-sealed LED1 of 5th Embodiment. The shape of the surface pattern 4 is not limited to that shown in the figure.

  Thus, even in the case of the two-point junction type square LED element 2 in which the p-side pad electrode and the n-side electrode are arranged diagonally, the positional deviation in the long side direction of the substrate when the element is mounted is within a certain range. Thus, a glass-sealed LED 1 having excellent mass productivity can be obtained. Further, by providing the heat radiation pattern 6 on the back surface of the element mounting substrate 3 corresponding to the mounting portion of the LED element 2, the heat dissipation can be improved.

  FIG. 18 is a plan view of a glass-sealed LED showing a seventh embodiment of the present invention. In FIG. 18, a glass sealing portion for sealing the surface of the element mounting substrate 3 is not shown.

  As shown in FIG. 18, the glass-sealed LED 1 includes a two-point junction type square LED element 2 in which a p-side pad electrode and an n-side electrode are arranged on one line, and the center of the surface of the square element mounting substrate 3. And the glass is sealed by hot pressing of the sealing glass. The element mounting substrate 3 has a surface pattern 4 connected to the via pattern forming portion 43 on the front surface, and has an electrode pattern 5 and a heat radiation pattern 6 on the back surface.

  As described above, even when one two-point junction type square LED element 2 in which the p-side pad electrode and the n-side electrode are arranged on one line is used, the position in the long side direction of the substrate when the element is mounted. The deviation can be allowed within a certain range, and the glass-sealed LED 1 excellent in mass productivity can be obtained. Moreover, it can be set as the solid element device which has the electrode pattern 5 and the heat radiation pattern 6 in the back surface on the opposite side to the surface in which the glass sealing part of the element mounting substrate 3 is provided, and electrical connection and ensuring of a heat radiation path are carried out on the same surface. Can be realized. The LED element 2 mounted on the element mounting substrate 3 may be a two-point junction type square LED element 2 in which the p-side pad electrode and the n-side electrode are arranged diagonally, as described above. A rectangular LED element 2 may be used instead of the square LED element 2.

  FIG. 19 is a cross-sectional view showing a light emitting device using a glass-sealed LED according to an eighth embodiment of the present invention.

  In the light emitting device 50 shown in FIG. 19, the glass-sealed LED 1 is mounted on an aluminum base substrate 9 made of aluminum as a metal substrate. The aluminum base substrate 9 has an insulating layer 9a on the surface of an aluminum plate having a thickness of 1.0 mm, and a wiring layer 9b and a heat dissipation layer 9c patterned with copper foil on the insulating layer 9a. Is joined to the electrode pattern 5 of the glass-sealed LED 1 by solder 8. This aluminum base substrate 9 is more excellent in heat dissipation performance of the glass-sealed LED 1 than a resin base substrate such as a glass epoxy substrate. The heat dissipating layer 9c is joined to the heat dissipating pattern 6 provided immediately below the element mounting portion 40 of the glass-sealed LED 1 by the solder 8, and the heat transmitted through the element mounting substrate 3 is made of aluminum base via the insulating layer 9a. Heat is radiated to the substrate 9.

  The insulating layer 9a is not particularly limited as long as it is an insulating material. For example, the insulating layer 9a may be formed of a resin material such as an epoxy resin or polyimide containing an inorganic filler.

  In this way, by mounting the glass-sealed LED 1 on the aluminum base substrate 9 as a metal substrate having excellent thermal conductivity, the heat generated with the light emission of the plurality of LED elements 2 is only from the surface of the glass-sealed portion 10. In addition, the heat radiation pattern 6 can be heated to the aluminum base substrate 9 through the element mounting substrate 3, and the light emitting device 50 in which the light emitting state of the LED element 2 is stable even when used for a long time or driven with a large current is realized. it can.

  FIG. 20 is a sectional view showing a light emitting device using a glass-sealed LED according to the ninth embodiment of the present invention.

  In the light emitting device 51 shown in FIG. 20, the glass-sealed LED 1 is mounted on a copper base substrate 9A made of copper or a copper alloy as a metal substrate. The copper base substrate 9A has an insulating layer 9a made of polyimide on the surface of a copper plate having a thickness of 1.0 mm, and a wiring layer 9b patterned with a copper foil on the insulating layer 9a. It is joined to the electrode pattern 5 of the glass-sealed LED 1 by solder 8. This copper base substrate 9A is more excellent in heat dissipation performance of the glass-sealed LED 1 than the aluminum base substrate described in the eighth embodiment. The insulating layer 9a has a portion where the heat radiation pattern 6 of the glass-sealed LED 1 is provided removed, and the heat radiation pattern 6 of the glass-sealed LED 1 is solder-bonded to the surface of the copper base substrate 9A via a portion where the insulating layer 9a is not present. Has been. As a result, the heat transmitted through the element mounting board 3 is thermally conducted to the copper base board 9 </ b> A through the solder 8.

  As described above, by mounting the glass-sealed LED 1 on the copper base substrate 9A as a metal substrate having more excellent thermal conductivity, the heat dissipation pattern 6 of the glass-sealed LED 1 and the copper base substrate 9A can be soldered. Thus, the light emitting device 50 with higher thermal conductivity can be realized. When the LED element 2 is driven with a large current, the heat generated in the LED element 2 also increases. However, since this heat can be dissipated to the copper base substrate 9A via the heat dissipating pattern 6 provided on the back surface of the element mounting substrate 3, a high-luminance and high-output light emitting device 51 can be realized.

  Moreover, in each said embodiment, although the glass sealing part 10 showed what shows a rectangular parallelepiped shape, the shape of a glass sealing part is not limited to this, For example, even if what shows a hemispherical shape Of course it is good. Furthermore, for example, the glass sealing part 10 may contain diffusing particles, and other specific details such as a detailed structure can be appropriately changed.

FIG. 1 is a perspective view of a glass-sealed LED which is a light-emitting device showing a first embodiment of the present invention. FIG. 2 is a plan view of the glass-sealed LED according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the glass-sealed LED taken along line AA in FIG. FIGS. 4A and 4B show an element mounting board before LED element mounting in the first embodiment, FIG. 4A is a plan view showing a back surface of the board, and FIG. 4B is a partially enlarged view of FIG. is there. FIG. 5 is a partially enlarged view showing a state in which LED elements are mounted on the surface of the element mounting substrate before division. FIG. 6 is a plan view of another glass-sealed LED according to the first embodiment of the present invention. FIG. 7 is a longitudinal sectional view of another glass-sealed LED according to the first embodiment shown in FIG. FIG. 8 is a plan view of a glass-sealed LED showing a second embodiment of the present invention. FIG. 9 is a plan view showing the back surface of the element mounting board before LED element mounting in the second embodiment. FIG. 10 is a partially enlarged view showing an element mounting substrate surface after LED element mounting in the second embodiment. FIG. 11 is a plan view of a glass-sealed LED showing a third embodiment of the present invention. FIG. 12 is a plan view of a glass-sealed LED showing a fourth embodiment of the present invention. FIG. 13 is a plan view of a glass-sealed LED showing a fifth embodiment of the present invention. FIG. 14 is a cross-sectional view of the glass-sealed LED taken along the line BB in FIG. FIG. 15 is a plan view of a glass-sealed LED showing a sixth embodiment of the present invention. 16 is a cross-sectional view of the glass-sealed LED in the CC section of FIG. FIG. 17 is a plan view of a glass-sealed LED showing a seventh embodiment of the present invention. FIG. 18 is a plan view of a glass-sealed LED showing a seventh embodiment of the present invention. FIG. 19 is a cross-sectional view showing a light emitting device using a glass-sealed LED according to an eighth embodiment of the present invention. FIG. 20 is a sectional view showing a light emitting device using a glass-sealed LED according to the ninth embodiment of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Glass sealing LED, 2 ... LED element, 3 ... Element mounting substrate, 3a ... Via hole, 4 ... Surface pattern, 4a ... W layer, 4b ... Ni layer, 4c ... Ag layer, 4d ... Via pattern, 5 ... Electrode 5A, 5B ... Electrode pattern, 6 ... Radiation pattern, 7 ... Au bump, 8 ... Solder, 9 ... Aluminum base substrate, 9a ... Insulating layer, 9A ... Copper base substrate, 9a ... Insulating layer, 9b ... Wiring layer, 9c ... Radiating layer, 9A ... Copper base substrate, 10 ... Glass sealing part, 10a ... Side face, 10b ... Upper surface, 11 ... Phosphor, 30 ... Element mounting substrate, 40 ... Element mounting part, 40A-40C ... Element mounting pattern , 40D ... straight line part, 40E ... folded part, 40F ... n-side pattern, 41 ... identification part, 42, 42A, 42B ... through hole, 43 ... via pattern formation part, 50 ... light emitting device, 51 ... light emitting device

Claims (16)

  1. A plurality of two-point junction type light emitting elements each having a first electrode and a second electrode;
    A surface pattern on which the plurality of light emitting elements are mounted so that the first electrode and the second electrode are arranged in the same direction on the first surface; and on the opposite side of the first surface A heat dissipating pattern provided on the second surface, the heat dissipating pattern provided so as to include a joint between the first electrode and the surface pattern of the second electrode, and provided on the second surface. An element mounting substrate having a pair of electrode patterns electrically connected to the surface pattern provided on the first surface and disposed symmetrically adjacent to the heat dissipation pattern;
    And a glass sealing portion that seals the first surface including the plurality of light emitting elements on the surface pattern.
  2.   The element mounting substrate includes a junction of the first electrode and the second electrode of the plurality of light emitting elements formed in a square shape and arranged in a square lattice pattern on the first surface. The heat radiation pattern provided on the second surface and formed in a rectangular shape having long sides so as to be parallel to the arrangement direction of the first electrode and the second electrode, and on the second surface 2. The pair of electrode patterns provided symmetrically in a direction orthogonal to an arrangement direction of the first electrode and the second electrode with the heat radiation pattern as a center. The light emitting device according to 1.
  3.   The light emitting device according to claim 1, wherein the plurality of light emitting elements have the same mounting direction of each light emitting element.
  4.   The plurality of light-emitting elements are mounted on the surface pattern so that the first electrode and the second electrode of each light-emitting element are arranged in a line. The light emitting device according to claim 1.
  5.   The plurality of light emitting elements are connected in series by joining the first electrode and the second electrode on the surface pattern formed discontinuously. 5. The light emitting device according to any one of 4 above.
  6.   6. The light emitting device according to claim 1, wherein the light emitting element is configured by arranging the first electrode and the second electrode in a direction parallel to a side surface of the element.
  7.   The light-emitting device according to claim 1, wherein the light-emitting element includes the first electrode and the second electrode arranged in a diagonal direction.
  8.   The light emitting device according to claim 5, wherein the electrode pattern is formed in a shape having rotational symmetry with respect to the heat dissipation pattern.
  9.   The light emitting device according to claim 1, wherein the surface pattern has a surface layer made of Ag.
  10.   The light emitting device according to claim 3, wherein the glass sealing portion is formed of a rectangular parallelepiped glass containing a phosphor.
  11. A plurality of two-point junction type light emitting elements each having a first electrode and a second electrode;
    A surface pattern on which the plurality of light emitting elements are mounted so that the first electrode and the second electrode are arranged in the same direction on the first surface; and on the opposite side of the first surface A heat dissipating pattern provided on the second surface, the heat dissipating pattern provided so as to include a joint between the first electrode and the surface pattern of the second electrode, and provided on the second surface. An element mounting substrate having a pair of electrode patterns electrically connected to the surface pattern provided on the first surface and symmetrically disposed adjacent to the heat radiation pattern; A glass-sealed LED comprising a glass-sealed portion that seals the first surface containing a light-emitting element;
    A light emitting device comprising: a metal substrate electrically connected to the electrode pattern provided on the element mounting substrate of the glass-sealed LED and thermally bonded to the heat dissipation pattern.
  12.   The light emitting device according to claim 11, wherein the metal substrate is made of aluminum.
  13.   The light emitting device according to claim 11, wherein the metal substrate is made of copper or a copper alloy.
  14.   14. The light emitting device according to claim 12, wherein the electrode pattern of the glass-sealed LED is bonded to a wiring layer formed on the metal surface through an insulating layer on the metal substrate.
  15.   The heat dissipation pattern of the glass-sealed LED is bonded to a heat dissipation layer formed on the metal surface via an insulating layer on the metal substrate. Light-emitting device.
  16.   The light emitting device according to claim 13, wherein the heat dissipation pattern is bonded to a surface of the metal substrate where a metal surface is exposed.
JP2007225694A 2007-08-31 2007-08-31 Light emitting device Pending JP2009059883A (en)

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104558A1 (en) 2008-02-19 2009-08-27 日本電気株式会社 Optical interconnection device
JP2010010682A (en) * 2008-06-24 2010-01-14 Samsung Electronics Co Ltd Submount, light emitting device including submount, and method of manufacturing submount
JP2011030463A (en) * 2009-07-30 2011-02-17 Toyoda Gosei Co Ltd Underwater lighting, and culture device using the same
JP2011101054A (en) * 2009-07-03 2011-05-19 Sharp Corp Substrate for mounting semiconductor light emitting element, backlight chassis, display device, and television receiver
JP2011129862A (en) * 2009-11-19 2011-06-30 Toyoda Gosei Co Ltd Light-emitting device, method of manufacturing light-emitting device, method of mounting light-emitting device, and light source device
JP2012124248A (en) * 2010-12-07 2012-06-28 Toppan Printing Co Ltd Lead frame substrate for mounting led chip, method for manufacturing the same and led package
US8426884B2 (en) 2010-09-01 2013-04-23 Hitachi Cable, Ltd. Light emitting diode with supporting substrate side electrodes and wiring structures
JP2013096020A (en) * 2011-10-28 2013-05-20 Sumita Optical Glass Inc Helmet
CN103427010A (en) * 2012-05-14 2013-12-04 欧姆龙株式会社 UV irradiation apparatus and ultraviolet irradiation head
US8669568B2 (en) 2010-10-13 2014-03-11 Interlight Optotech Corporation Light emitting device usable for variable driving voltages
JP2014216493A (en) * 2013-04-25 2014-11-17 スタンレー電気株式会社 Semiconductor light-emitting element and semiconductor light-emitting device
JP5635495B2 (en) * 2009-04-16 2014-12-03 株式会社光波 Light source module and planar light emitting device
JP2014229626A (en) * 2013-05-17 2014-12-08 スタンレー電気株式会社 Semiconductor light emitting element array
JP2015019090A (en) * 2014-08-22 2015-01-29 シャープ株式会社 Light emitting device
US9093357B2 (en) 2010-01-22 2015-07-28 Sharp Kabushiki Kaisha Light emitting device
US9231023B2 (en) 2009-11-13 2016-01-05 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
JP2016072269A (en) * 2014-09-26 2016-05-09 日亜化学工業株式会社 Light emission device and board for the same
WO2017159129A1 (en) * 2016-03-15 2017-09-21 ソニー株式会社 Glass wiring substrate and method for producing same, component mounted glass wiring substrate and method for producing same, and substrate for display devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
JP2006303396A (en) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd Surface-mounting light-emitting device
JP2007103917A (en) * 2005-09-07 2007-04-19 Toyoda Gosei Co Ltd Solid state element device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
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US8426884B2 (en) 2010-09-01 2013-04-23 Hitachi Cable, Ltd. Light emitting diode with supporting substrate side electrodes and wiring structures
US8669568B2 (en) 2010-10-13 2014-03-11 Interlight Optotech Corporation Light emitting device usable for variable driving voltages
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