JPH05299410A - Etching mask pattern of dimension measuring cell - Google Patents

Abstract

PURPOSE:To make small the influences of microloading effects at etching and enhance monitor precision in a dimension measuring cell which is formed by etching by a method wherein an arrangement and member in etching patterns of the dimension measuring cell are not changed. CONSTITUTION:An etching mask pattern 11 of a dimension measuring cell is composed of line patterns 12 having three lines or more which are formed on a semiconductor substrate 1 and each of the line patterns 12 is arranged in parallel and in a row. Or, holes arranged as three rows three columns are provided in the mask patterns for etching which are formed on the semiconductor substrate 1. Or, etching mask patterns of two kinds of dimension measuring cell are continuously formed on the semiconductor substrate 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching mask pattern of a dimension measuring cell used for forming a dimension measuring cell of a semiconductor device.

[0002]

2. Description of the Related Art As shown in the layout diagram of FIG. 7, an etching mask pattern 41 of a dimension measuring cell formed in a conventional semiconductor device has a street 3 for dividing a plurality of semiconductor devices 2 mounted on a semiconductor substrate 1. Formed on. Etching mask pattern 41 of this dimension measuring cell
Are formed by one line pattern having a design dimension width of a pattern formed in an element formation region (not shown).

Further, as shown in the layout diagram of FIG. 8, the etching mask pattern 51 of the dimension measuring cell formed in the conventional semiconductor device divides a plurality of semiconductor elements 2 mounted on the semiconductor substrate 1 in the same manner as described above. It is formed on street 3. The etching mask pattern 51 of this dimension measuring cell is used as a mask pattern 52 for the semiconductor device 2
One hole 53 having the same size as the design size of the hole formed in the element forming region (not shown) is provided.

[0004]

However, when the dimension measuring cell is formed by etching using the etching mask pattern of the dimension measuring cell having the line pattern having the above-mentioned structure, the dimension measuring cell is caused by the microloading effect at the time of etching. The cell is formed thicker than the pattern width in the element formation region. Therefore, the pattern width in the element formation region cannot be accurately monitored by the dimension measuring cell.

When the dimension measuring cell is formed by etching using the etching mask pattern of the dimension measuring cell having the above-mentioned structure, the dimension measuring hole of the dimension measuring cell is formed by the microloading effect during etching. It is formed larger than the hole in the element formation region. Therefore, the size of the hole in the element formation region cannot be accurately monitored by the dimension measuring cell.

It is an object of the present invention to provide an etching mask pattern for a dimension measuring cell which is not affected by the microloading effect.

[0007]

The present invention has been made to achieve the above object. That is, it is composed of three or more line patterns formed on a semiconductor substrate, and the line patterns are arranged in parallel and in parallel. Or on the etching mask pattern formed on the semiconductor substrate,
The holes are arranged in three rows and three columns. Alternatively, the etching mask patterns of the above two types of dimension measuring cells are continuously formed on a semiconductor substrate.

[0008]

In the etching mask pattern of the dimension measuring cell having the above structure, three or more line patterns are arranged in parallel, so that the dimension measuring cell formed by using the line pattern arranged at least in the central portion as an etching mask. Line patterns are not affected by the microloading effect.
Therefore, there is almost no difference between the dimension of the line pattern arranged in the center of the dimension measuring cell and the dimension of the line pattern formed in the element formation region. Therefore, the dimension of the pattern in the element formation region is accurately monitored by the dimension measuring cell.

In the etching mask pattern of the dimension measuring cell having the above structure, since the holes arranged in 3 rows and 3 columns are provided, the dimension measuring holes formed at least in the central portion by etching are microscopic. Not affected by loading effect. Therefore, there is almost no difference between the size of the size measuring holes arranged in the center of the size measuring cell and the size of the holes formed in the element forming region.
Therefore, the dimension measuring cell accurately monitors the dimension of the hole in the element formation region.

Further, an etching mask pattern of a dimension measuring cell comprising three or more line patterns arranged in parallel and three
When etching is performed using the etching mask pattern of the dimension measurement cell in which the holes are arranged in three or more rows and the etching mask pattern of the dimension measurement cell is continuously provided, the dimension measurement line pattern and the dimension are measured. A dimension measuring cell is formed with measuring holes. As a result, one dimension measuring cell monitors each dimension of the line pattern and holes formed in the element formation region of the semiconductor device.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to the layout diagram of FIG. As shown in the figure, on the streets 3 that divide the semiconductor device 2 formed on the semiconductor substrate 1,
An etching mask pattern 11 of the dimension measurement cell is formed. The etching mask pattern 11 of this dimension measuring cell is formed by arranging, for example, five line patterns 12 in parallel and at equal intervals.

Although the etching mask pattern 11 of the dimension measuring cell is formed on the street 3 in the above description, it may be formed on the space portion (not shown) of the element forming region in the semiconductor device 2, for example. The number of line patterns 12 is not limited as long as it is three or more.

As shown in FIG. 2, when the etching target film 4 formed on the semiconductor substrate 1 is etched by using the etching mask pattern 11 of the dimension measuring cell having the above-described structure, the etching target film 4 of the etching target film 4 is etched. The dimension measurement cell 13 is formed by removing the portion indicated by the chain double-dashed line. The dimension measuring cell 13 is composed of, for example, five line patterns 14. Line patterns 14 on both sides of the line pattern 14
The line widths of a and 14e become thicker due to the influence of the microloading effect, but the line pattern 14 (14c) in the central portion
Are not affected by the microloading effect. Therefore, there is almost no difference between the size of the line pattern 14c and the size of the line pattern (not shown) formed in the element formation region. Therefore, the line pattern 14c of the dimension measuring cell 13 accurately monitors the pattern dimension in the element formation region.

In the dimension measuring cell 13 formed by using the etching mask pattern 11 of the dimension measuring cell, the line pattern (formed in the element forming region of the semiconductor device (2) is formed in the space portion 15 between the line patterns 14. It is also possible to monitor the size of the space between (not shown).

The etching mask pattern 11 of the dimension measuring cell is formed simultaneously with a pattern (not shown) formed in the element forming region of the semiconductor device (2). Usually, the etching mask pattern 11 of the dimension measurement cell is
Usually formed of resist. This resist may be a positive resist or a negative resist. The method for forming the etching mask pattern 11 of the dimension measurement cell may be any ordinary photolithography method or electron beam direct writing method.

Next, a second embodiment will be described with reference to the layout diagram of FIG. As shown in the drawing, an etching mask pattern 21 of a dimension measuring cell is formed on the street 3 that divides the semiconductor device 2 formed on the semiconductor substrate 1. Etching mask pattern 2 for this dimension measurement cell
In No. 1, the mask pattern 22 is provided with holes 23 arranged in, for example, 5 rows and 5 columns.

Although the etching mask pattern 21 of the dimension measuring cell is formed on the street 3 in the above description, it may be formed on the space portion (not shown) of the element forming region in the semiconductor device 2, for example. In addition, the hole 23
Although the holes 23 are provided in 5 rows, the number of the holes 23 arranged is not limited as long as it is 3 rows and 3 columns or more.

As shown in FIG. 4, when the etching target film 4 formed on the semiconductor substrate 1 is etched using the etching mask pattern 21 of the dimension measuring cell having the above structure, the etching target film 4 of the etching target film 4 is etched. The portion indicated by the chain double-dashed line is removed, and the dimension measuring cell 24 made of the film to be etched 4 is formed. Of the dimension measuring holes 25 of the dimension measuring cell 24, the dimension measuring holes 25 (25c) arranged in at least the central portion are less susceptible to the microloading effect. Therefore, there is almost no difference between the size of the size measuring hole 25c and the size of the hole (not shown) formed in the element formation region. Therefore, the size of the hole in the element formation region is accurately monitored by the size measuring hole 25c of the size measuring cell 24.

The etching mask pattern 21 of the dimension measuring cell is formed simultaneously with a pattern (not shown) formed in the semiconductor device (2). Usually, the etching mask pattern 21 of the dimension measurement cell is usually formed of a resist. This resist may be a positive resist or a negative resist. The method for forming the etching mask pattern 21 of the dimension measuring cell may be any ordinary photolithography method or electron beam direct writing method.

Next, a third embodiment will be described with reference to the layout diagram of FIG. In the figure, the same components as those described in the first and second embodiments are designated by the same reference numerals.

As shown in the drawing, the etching mask pattern 31 of the dimension measuring cell is formed on the street 3 which divides the semiconductor device 2 formed on the semiconductor substrate 1 into the dimension measuring cell described in the first embodiment. The etching mask pattern 11 and the etching mask pattern 21 of the dimension measuring cell described in the second embodiment are continuously formed. That is, the etching mask pattern 31 of the dimension measuring cell is composed of, for example, five line patterns 12 arranged in parallel and a mask pattern 22 connected to each line pattern 12. The mask pattern 22 is provided with holes 23 arranged in, for example, 5 rows and 5 columns.

When the etching target film 4 formed on the semiconductor substrate 1 is etched as shown in FIG. 6 using the etching mask pattern 31 of the dimension measuring cell having the above-mentioned structure, the first embodiment In the same manner as described above, the portion indicated by the chain double-dashed line of the film-to-be-etched 4 is removed to form the dimension measuring cell 32 made of the film-to-be-etched 4.
The line pattern (not shown) arranged on both sides of the line pattern 14 of the dimension measuring cell 32 has a large line width due to the influence of the microloading effect, but the line pattern 14 (14c) arranged in the central portion. Are not affected by the microloading effect. Therefore, the line pattern 14c
And the dimension of the line pattern (not shown) formed in the element formation region of the semiconductor device (2) are almost eliminated.

Further, as described in the second embodiment, the dimension measuring hole 25 (25c) arranged in the center among the dimension measuring holes 25 of the dimension measuring cell 32 is also affected by the microloading effect. I do not receive it. Therefore, there is almost no difference between the size of the size measuring hole 25c and the size of the hole (not shown) formed in the element formation region of the semiconductor device (2). Therefore, the dimension measuring cell 32 accurately monitors the dimension of the line pattern or the dimension of the hole in the element formation region of the semiconductor device (2).

The etching mask pattern 31 of the dimension measuring cell is formed at the same time as a pattern (not shown) formed in the element forming region in the semiconductor device 2. Normal,
The etching mask pattern 31 of the dimension measurement cell is usually formed of a resist. This resist may be a positive resist or a negative resist. The method for forming the etching mask pattern 31 of the dimension measuring cell may be any ordinary photolithography method or electron beam direct writing method.

[0025]

As described above, according to the first aspect of the present invention, by arranging three or more line patterns in parallel, the line pattern arranged in the central portion is used as an etching mask. The line pattern of the dimensioning cell is not affected by the microloading effect. Therefore, it becomes possible to accurately monitor the dimension of the line pattern formed in the element formation region. Therefore, the quality control of the semiconductor element can be accurately performed.

According to the second aspect of the present invention, since the holes arranged in three rows and three columns are provided, the size measuring hole of the size measuring cell formed by the holes arranged in the central portion by etching is: Not affected by microloading effect. Therefore, it becomes possible to accurately monitor the size of the hole formed in the element formation region. Therefore, the quality control of the semiconductor element can be accurately performed.

According to the third aspect of the present invention, the etching mask pattern of the dimension measuring cell is formed of a line pattern in which three or more lines are arranged in parallel, and the etching mask of the dimension measuring cell in which holes are arranged in three rows and three columns. By continuously forming the pattern, the dimension measuring cell formed by etching can simultaneously monitor the dimension of the line pattern and the dimension of the hole formed in the element formation region.

[Brief description of drawings]

FIG. 1 is a layout diagram of a first embodiment.

FIG. 2 is an explanatory diagram of an operation of the first embodiment.

FIG. 3 is a layout diagram of a second embodiment.

FIG. 4 is an explanatory view of the operation of the second embodiment.

FIG. 5 is a layout diagram of a third embodiment.

FIG. 6 is an explanatory view of the operation of the third embodiment.

FIG. 7 is a layout diagram of a conventional example.

FIG. 8 is a layout diagram of another conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 11 Etching mask pattern of dimension measuring cell 12 Line pattern 21 Etching mask pattern of dimension measuring cell 23 Hole 31 Etching mask pattern of dimension measuring cell

Claims (3)

[Claims] 1. An etching mask pattern for a dimension measuring cell, which comprises three or more line patterns formed on a semiconductor substrate, each line pattern being arranged in parallel and in parallel. 2. An etching mask pattern for a dimension measuring cell, characterized in that the etching mask pattern formed on a semiconductor substrate is provided with holes arranged in three rows and three columns. 3. A dimension measuring cell, wherein the etching mask pattern of the dimension measuring cell according to claim 1 and the etching mask pattern of the dimension measuring cell according to claim 2 are continuously formed on a semiconductor substrate. Etching mask pattern.