JPH0529636B2 - - Google Patents
Info
- Publication number
- JPH0529636B2 JPH0529636B2 JP25665884A JP25665884A JPH0529636B2 JP H0529636 B2 JPH0529636 B2 JP H0529636B2 JP 25665884 A JP25665884 A JP 25665884A JP 25665884 A JP25665884 A JP 25665884A JP H0529636 B2 JPH0529636 B2 JP H0529636B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- laser
- present
- changing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012159 carrier gas Substances 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000001182 laser chemical vapour deposition Methods 0.000 claims description 6
- -1 alkyl compound Chemical class 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000007068 beta-elimination reaction Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/121—Coherent waves, e.g. laser beams
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25665884A JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25665884A JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61136682A JPS61136682A (ja) | 1986-06-24 |
| JPH0529636B2 true JPH0529636B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-06 |
Family
ID=17295668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25665884A Granted JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61136682A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY107475A (en) * | 1990-05-31 | 1995-12-30 | Canon Kk | Semiconductor device and method for producing the same. |
| GB2264957B (en) * | 1992-03-12 | 1995-09-20 | Bell Communications Res | Deflected flow in a chemical vapor deposition cell |
| US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
-
1984
- 1984-12-05 JP JP25665884A patent/JPS61136682A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61136682A (ja) | 1986-06-24 |
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