JPH0527974B2 - - Google Patents

Info

Publication number
JPH0527974B2
JPH0527974B2 JP60045019A JP4501985A JPH0527974B2 JP H0527974 B2 JPH0527974 B2 JP H0527974B2 JP 60045019 A JP60045019 A JP 60045019A JP 4501985 A JP4501985 A JP 4501985A JP H0527974 B2 JPH0527974 B2 JP H0527974B2
Authority
JP
Japan
Prior art keywords
wafers
oxygen
wafer
clusters
semiconductor wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60045019A
Other languages
English (en)
Japanese (ja)
Other versions
JPS618930A (ja
Inventor
Kazukara Bikutooru
Ruruuiyu Josurin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to JP4501985A priority Critical patent/JPS618930A/ja
Publication of JPS618930A publication Critical patent/JPS618930A/ja
Publication of JPH0527974B2 publication Critical patent/JPH0527974B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP4501985A 1984-06-20 1985-03-08 半導体ウエーハの標準化処理方法 Granted JPS618930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4501985A JPS618930A (ja) 1984-06-20 1985-03-08 半導体ウエーハの標準化処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP84430020.2 1984-06-20
JP4501985A JPS618930A (ja) 1984-06-20 1985-03-08 半導体ウエーハの標準化処理方法

Publications (2)

Publication Number Publication Date
JPS618930A JPS618930A (ja) 1986-01-16
JPH0527974B2 true JPH0527974B2 (enrdf_load_stackoverflow) 1993-04-22

Family

ID=12707630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4501985A Granted JPS618930A (ja) 1984-06-20 1985-03-08 半導体ウエーハの標準化処理方法

Country Status (1)

Country Link
JP (1) JPS618930A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3011982B2 (ja) * 1990-09-14 2000-02-21 コマツ電子金属株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167637A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS618930A (ja) 1986-01-16

Similar Documents

Publication Publication Date Title
US4637123A (en) Method of standardizing and stabilizing semiconductor wafers
US7632349B2 (en) Silicon wafer surface defect evaluation method
EP2259291B1 (en) Process for metallic contamination reduction in silicon wafers
JP2735772B2 (ja) シリコンにおける汚染物除去および少数担体寿命の改良
CN112585734A (zh) 用于评估晶片的有缺陷区域的方法
KR102413431B1 (ko) 웨이퍼의 결정 결함 평가 장치 및 방법
JP2680482B2 (ja) 半導体基板、半導体基板と半導体装置の製造方法、並びに半導体基板の検査・評価方法
JP2936916B2 (ja) シリコン単結晶の品質評価方法
US7074271B2 (en) Method of identifying defect distribution in silicon single crystal ingot
JP3080501B2 (ja) シリコンウェーハの製造方法
JPH0527974B2 (enrdf_load_stackoverflow)
JP3933010B2 (ja) シリコン単結晶インゴットの点欠陥分布を測定する方法
KR100384680B1 (ko) 반도체 웨이퍼 결함 검출 방법
JP2002334886A (ja) シリコンウェーハの酸素析出物密度の評価方法及びその評価方法に基づいて製造されたシリコンウェーハ
JP3874255B2 (ja) シリコンウェーハ中のｂｍｄサイズの評価方法
JP2004031845A (ja) ゲッタリング能力の評価方法
JP2004020341A (ja) シリコン単結晶インゴットの点欠陥分布を測定する方法
Barhdadi et al. Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals
US6013556A (en) Method of integrated circuit fabrication
JPH0469422B2 (enrdf_load_stackoverflow)
JP3731553B2 (ja) シリコンウェーハの窒素濃度の評価方法
CN119915773A (zh) 重掺杂p型硅片bmd的量测方法、获取硅片生长bmd热处理最优条件的方法、系统及计算机可读介质
Hahn et al. Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si
JP2025075668A (ja) 金属汚染評価方法
Jastrzebski et al. Advances in gettering of poly‐crystalline PV silicon