JPH0525953B2 - - Google Patents
Info
- Publication number
- JPH0525953B2 JPH0525953B2 JP18027783A JP18027783A JPH0525953B2 JP H0525953 B2 JPH0525953 B2 JP H0525953B2 JP 18027783 A JP18027783 A JP 18027783A JP 18027783 A JP18027783 A JP 18027783A JP H0525953 B2 JPH0525953 B2 JP H0525953B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- heating
- processed
- etching
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 23
- 238000000992 sputter etching Methods 0.000 claims description 17
- 230000007246 mechanism Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18027783A JPS6075588A (ja) | 1983-09-30 | 1983-09-30 | 加熱機構付のスパツタエツチング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18027783A JPS6075588A (ja) | 1983-09-30 | 1983-09-30 | 加熱機構付のスパツタエツチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6075588A JPS6075588A (ja) | 1985-04-27 |
JPH0525953B2 true JPH0525953B2 (enrdf_load_html_response) | 1993-04-14 |
Family
ID=16080405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18027783A Granted JPS6075588A (ja) | 1983-09-30 | 1983-09-30 | 加熱機構付のスパツタエツチング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6075588A (enrdf_load_html_response) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0425229U (enrdf_load_html_response) * | 1990-06-21 | 1992-02-28 | ||
JP5764780B2 (ja) * | 2011-06-07 | 2015-08-19 | 株式会社ユーテック | ポーリング処理方法及び圧電体の製造方法 |
-
1983
- 1983-09-30 JP JP18027783A patent/JPS6075588A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6075588A (ja) | 1985-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4430547A (en) | Cleaning device for a plasma etching system | |
JPH0525953B2 (enrdf_load_html_response) | ||
JPH11111829A (ja) | 静電吸着ホットプレート、真空処理装置、及び真空処理方法 | |
JP2004216321A5 (enrdf_load_html_response) | ||
JP6722466B2 (ja) | 成膜装置及び基板判別方法 | |
CN114231933A (zh) | 一种利用离子束溅射沉积制备薄膜的方法 | |
JP3949304B2 (ja) | スパッタリング処理方法と装置 | |
JPH0634244U (ja) | マイクロ波プラズマ処理装置 | |
JPH11204626A (ja) | 真空処理装置 | |
JPH0831751A (ja) | プラズマ処理装置 | |
JPH05306466A (ja) | プラズマcvd装置 | |
JPH088227A (ja) | 半導体製造方法および装置 | |
JPH04116165A (ja) | ウエハホルダのガス除去装置およびガス除去方法 | |
JP2001345308A (ja) | アッシング装置 | |
JPS6383261A (ja) | スパツタリング装置 | |
JPS6146017A (ja) | 薄膜生成装置 | |
JPH03207861A (ja) | 加熱装置 | |
JP3067180B2 (ja) | 単結晶シリコン膜形成方法およびその装置 | |
JPH01205066A (ja) | 真空成膜装置 | |
JPH01292813A (ja) | プラズマcvd装置 | |
JPH07258831A (ja) | 光ファイバ伝送式レーザ蒸着装置及び蒸着方法 | |
JP2003029112A (ja) | 基板保持装置および成膜方法 | |
JPS58136763A (ja) | プラズマ化学気相生成装置 | |
JPH05206009A (ja) | 半導体装置の製造装置 | |
JPH05156432A (ja) | 電子サイクロトロン共鳴装置 |