JPH0524665B2 - - Google Patents
Info
- Publication number
- JPH0524665B2 JPH0524665B2 JP62336118A JP33611887A JPH0524665B2 JP H0524665 B2 JPH0524665 B2 JP H0524665B2 JP 62336118 A JP62336118 A JP 62336118A JP 33611887 A JP33611887 A JP 33611887A JP H0524665 B2 JPH0524665 B2 JP H0524665B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- support plate
- wire bonding
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000696 magnetic material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置等のリードフレーム上に形
成された電極もしくはリードフレーム上に固着さ
れた半導体素子又は回路基板上の電極に対するリ
ード細線の接続に好適な超音波利用のワイヤボン
デイング装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to connection of thin lead wires to electrodes formed on lead frames of semiconductor devices, semiconductor elements fixed on lead frames, or electrodes on circuit boards. The present invention relates to a wire bonding device using ultrasonic waves suitable for.
超音波振動を利用したワイヤボンデイングは周
知であり、例えば第４図に示す樹脂封止型パワー
トランジスタの製造にも利用されている。第４図
に示すリードフレーム組立体１は、リードフレー
ム２とパワートランジスタチツプ３とリード細線
４から成る。リードフレーム２は支持板５、支持
板５の一端に配置された外部リード６、外部リー
ド６を平行に連結するタイバー７及び第１の連結
細条８、支持板５の他端に連結された位置決めリ
ード９、位置決めリード９を平行に連結する第２
の連結細条１０から成る。リードフレーム２は図
示のように、複数個の支持板５が平行に連結され
た多素子取り用のリードフレームとなつている。
Wire bonding using ultrasonic vibration is well known and is also used, for example, in manufacturing a resin-sealed power transistor shown in FIG. The lead frame assembly 1 shown in FIG. 4 consists of a lead frame 2, a power transistor chip 3, and a thin lead wire 4. The lead frame assembly 1 shown in FIG. The lead frame 2 is connected to a support plate 5, an external lead 6 disposed at one end of the support plate 5, a tie bar 7 connecting the external leads 6 in parallel, a first connecting strip 8, and the other end of the support plate 5. The positioning lead 9 and the second positioning lead 9 that connects the positioning lead 9 in parallel.
It consists of 10 connecting strips. As shown in the figure, the lead frame 2 is a multi-element lead frame in which a plurality of support plates 5 are connected in parallel.
リードフレーム組立体１を作製する際には、リ
ードフレーム２の支持板５上にパワートランジス
タチツプ３を固着し、続いてパワートランジスタ
チツプ３上の電極と外部リード６即ち外部接続電
極とをリード細線４で接続する。ここで、パワー
トランジスタチツプ３の固着及びリード細線４の
接続はそれぞれ周知のダイボンデイング及びワイ
ヤボンデイングにて行われる。しかる後、リード
フレーム組立体１に樹脂封止体１５を周知のトラ
ンスフアモールドにより形成し、所定の工程を施
した後にタイバー７、第１及び第２の連結細条
８，１０及び位置決めリード９を切断除去するこ
とによつて個別化された樹脂封止型トランジスタ
とする。 When manufacturing the lead frame assembly 1, the power transistor chip 3 is fixed on the support plate 5 of the lead frame 2, and then the electrodes on the power transistor chip 3 and the external leads 6, that is, the external connection electrodes are connected with thin lead wires. Connect with 4. Here, fixing of the power transistor chip 3 and connection of the thin lead wires 4 are performed by well-known die bonding and wire bonding, respectively. Thereafter, a resin sealing body 15 is formed on the lead frame assembly 1 by well-known transfer molding, and after performing a predetermined process, the tie bar 7, the first and second connecting strips 8, 10, and the positioning lead 9 are formed. By cutting and removing the resin-sealed transistors, individualized resin-sealed transistors are obtained.
第５図に示すリード細線４を超音波振動を利用
して接続するためのボンデイング装置は、周知の
自動ワイヤボンダーのキヤピラリ１２と、このキ
ヤピラリ１２の駆動装置１２ａと、載置台１３
と、固定用治具１４と、この固定用治具１４の駆
動装置１４ａと、ガイドピン１１と、このガイド
ピン１１の駆動装置１１ａとから成る。ワイヤボ
ンデイング時には、キヤピラリ１２からリード細
線４を繰り出し、リード細線４をトランジスタチ
ツプ３の電極にキヤピラリ１２で押し付けると共
にキヤピラリ１２に電極の表面と平行な方向に超
音波振動を加える。つまり、リード細線４を電極
に押し付けこすり合わせて接続する。リードフレ
ーム２の外部リード６（外部接続用電極）にワイ
ヤボンデイングをする時はリードフレーム２を載
置台１３の上に置き、固定用治具１４で所定の箇
所を押えつけて行う。 The bonding device shown in FIG. 5 for connecting thin lead wires 4 using ultrasonic vibration includes a capillary 12 of a well-known automatic wire bonder, a drive device 12a for this capillary 12, and a mounting table 13.
, a fixing jig 14, a driving device 14a for the fixing jig 14, a guide pin 11, and a driving device 11a for the guide pin 11. During wire bonding, a thin lead wire 4 is let out from a capillary 12, and the thin lead wire 4 is pressed against the electrode of the transistor chip 3 by the capillary 12, and ultrasonic vibration is applied to the capillary 12 in a direction parallel to the surface of the electrode. That is, the thin lead wire 4 is pressed against the electrode and rubbed together to connect. When wire bonding is performed on the external leads 6 (electrodes for external connection) of the lead frame 2, the lead frame 2 is placed on the mounting table 13, and the fixing jig 14 is used to press the lead frame 2 at a predetermined position.
ところで、この超音波振動法を利用したワイヤ
ボンデイングには以下のような問題がある。
By the way, wire bonding using this ultrasonic vibration method has the following problems.
リード細線４を接続すべき電極（第５図では、
パワートランジスタチツプ３上の電極）にキヤピ
ラリ１２で押し付けると、キヤピラリ１２の超音
波振動が接続部分を通じてリードフレーム２に加
わる。この振動により、リードフレーム２は僅か
ではあるがその振動方向に載置台１３上を滑動す
る。この滑動が生じるとリード細線４の接続部
（ワイヤボンデイング部）に超音波振動が十分に
加らず接続が不十分となる。また、滑動が生じな
い場合であつても、リードフレーム２の変形等に
基づいて載置台１３に対するリードフレーム２の
密着性が悪く、ワイヤボンデイングを良好に行う
ことができないことがある。この種の問題は固定
用治具１４によるリードフレーム２の固定箇所が
ワイヤボンデイング部から離れているために生じ
るので、本発明者は固定用治具１４を多数個設け
て多数箇所でリードフレーム２を固定する方法を
試みた。しかし、キヤピラリ１２の移動を妨害し
ないように多数の固定箇所を設けてリードフレー
ム２を十分に固定することはできなかつた。 The electrode to which the thin lead wire 4 should be connected (in Fig. 5,
When the capillary 12 is pressed against the electrode (on the power transistor chip 3), the ultrasonic vibration of the capillary 12 is applied to the lead frame 2 through the connecting portion. Due to this vibration, the lead frame 2 slides on the mounting table 13 in the direction of the vibration, albeit slightly. When this sliding occurs, sufficient ultrasonic vibration is not applied to the connecting portion (wire bonding portion) of the thin lead wire 4, resulting in insufficient connection. Further, even if no sliding occurs, the adhesion of the lead frame 2 to the mounting table 13 may be poor due to deformation of the lead frame 2, etc., and wire bonding may not be performed satisfactorily. This kind of problem occurs because the fixing location of the lead frame 2 by the fixing jig 14 is far from the wire bonding part, so the inventor provided a large number of fixing jigs 14 to fix the lead frame 2 at multiple locations. I tried a method to fix it. However, it has not been possible to sufficiently fix the lead frame 2 by providing a large number of fixing points so as not to interfere with the movement of the capillary 12.
そこで、本発明の目的はキヤピラリの移動の自
由度を低下させることなしに良好なワイヤボンデ
イングを行うことができる装置を提供することに
ある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an apparatus that can perform good wire bonding without reducing the degree of freedom of movement of a capillary.
上記目的を達するための本発明は、支持板と外
部リードとを有するリードフレームと前記支持板
の表面に固着された電子素子又は回路基板とから
成るリードフレーム組立体における前記電子素子
又は回路基板と前記外部リードとをリード細線で
相互に接続するためのワイヤボンデイング装置で
あつて、前記リードフレームを載置するための載
置台と、前記リード細線を前記電子素子又は回路
基板と前記外部リードとに超音波を利用して接続
するためのキヤピラリと、前記載置台の前記リー
ドフレームの前記支持板が載置された領域に配置
された第１の磁石と、前記載置台の前記リードフ
レームの前記外部リードが載置される領域に配置
された第２の磁石とを備え、且つ前記リードフレ
ームは前記第１及び第２の磁石で吸引されるよう
に磁性材料から成り、且つ前記第１及び第２の磁
石は前記キヤピラリの超音波振動方向に所定間隔
を有して配置され、且つ前記載置台には前記キヤ
ピラリの超音波振動方向における前記リードフレ
ームの一端及び他端の位置ずれを防ぐ第１及び第
２の突出部が設けられていることを特徴とするワ
イヤボンデイング装置に係わるものである。
To achieve the above object, the present invention provides a lead frame assembly comprising a lead frame having a support plate and an external lead, and an electronic element or circuit board fixed to the surface of the support plate. A wire bonding device for interconnecting the external leads with thin lead wires, the device comprising: a mounting table on which the lead frame is placed; and the thin lead wires are connected to the electronic element or circuit board and the external leads. a capillary for connection using ultrasonic waves; a first magnet disposed in a region where the support plate of the lead frame of the mounting base is placed; and the outside of the lead frame of the mounting base. a second magnet disposed in a region on which the lead is placed; the lead frame is made of a magnetic material so as to be attracted by the first and second magnets; The magnets are arranged at predetermined intervals in the direction of ultrasonic vibration of the capillary, and the mounting table includes first and second magnets for preventing displacement of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary. The present invention relates to a wire bonding device characterized by being provided with a second protrusion.
本発明は次の作用効果を有する。 The present invention has the following effects.
(イ) キヤピラリの超音波振動方向におけるリード
フレームの一端及び他端の位置ずれを防ぐ第１
及び第２の突出部を設けたので、リードフレー
ムの超音波振動方向の移動を防いで、ワイヤボ
ンデイングを良好に行うことができる。(b) The first part that prevents misalignment of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary.
Since the second protrusion is provided, movement of the lead frame in the ultrasonic vibration direction can be prevented and wire bonding can be performed satisfactorily.
(ロ) 支持板と外部リードとの両方を第１及び第２
の磁石で吸引し、且つ第１及び第２の磁石が超
音波振動方向に所定の間隔を有して配置されて
いるので、リードフレームを安定的に保持し、
ワイヤボンデイングを良好に達成することが可
能になる。(b) Connect both the support plate and the external lead to the first and second
Since the lead frame is attracted by a magnet, and the first and second magnets are arranged at a predetermined interval in the ultrasonic vibration direction, the lead frame is stably held.
It becomes possible to achieve good wire bonding.
次に、本発明の実施例に係わる樹脂封止型パワ
ートランジスタの製造方法を説明する。但し、第
１図〜第３図で符号１〜１４及び８ａ，１１ａ，
１２ａ，１４ａで示す部分は第４図及び第５図で
同一の符号で示す部分と実質的に同一であるの
で、その説明を省略する。
Next, a method for manufacturing a resin-sealed power transistor according to an embodiment of the present invention will be described. However, in FIGS. 1 to 3, the symbols 1 to 14 and 8a, 11a,
Since the parts indicated by 12a and 14a are substantially the same as the parts indicated by the same reference numerals in FIGS. 4 and 5, their explanation will be omitted.
第１図〜第３図において第４図及び第５図と相
違している点は、載置台１３に電磁石１６を配設
したこと、更に載置台１３を第１及び第２の部分
１３ａ，１３ｂに分割すると共に、この上面をリ
ードフレーム２の下面に対応するように形成した
ことである。 1 to 3 are different from FIG. 4 and FIG. The upper surface of the lead frame 2 is formed to correspond to the lower surface of the lead frame 2.
各部を更に詳しく説明すると、載置台１３は支
持板５、位置決めリード９及び連結細条１０を載
せる第１の部分１３ａと、外部リード６及び連結
細条８を載せる第２の部分１３ｂとの組み合せか
ら成り、第２の部分１３ｂを第１の部分１３ａに
相対的に移動することができるように構成されて
いる。 To explain each part in more detail, the mounting table 13 is a combination of a first part 13a on which the support plate 5, positioning leads 9 and connecting strips 10 are placed, and a second part 13b on which the external leads 6 and connecting strips 8 are placed. The second portion 13b is configured to be movable relative to the first portion 13a.
第１の部分１３ａには支持板５が載置される第
１の載置面１７と、位置決めリード９及び連結細
条１０が載置される第２の載置面１８とが設けら
れ、第１及び第２の載置面１７，１８の境界に傾
斜面１９が設けられている。即ち、支持板５の肉
厚が位置決めリード９の肉厚よりも大きいために
生じている段差部２０及び支持板５の下面及び位
置決めリード９の下面に対応するように第１の部
分１３ａの上面が形成されている。更に、第１の
部分１３ａは連結細条１０の右方向へのずれを防
ぐための突出部２１を有する。 The first portion 13a is provided with a first mounting surface 17 on which the support plate 5 is mounted, a second mounting surface 18 on which the positioning lead 9 and the connecting strip 10 are mounted, and a second mounting surface 18 on which the positioning lead 9 and the connecting strip 10 are mounted. An inclined surface 19 is provided at the boundary between the first and second mounting surfaces 17 and 18. That is, the upper surface of the first portion 13a is adjusted so as to correspond to the stepped portion 20 and the lower surface of the supporting plate 5 and the lower surface of the positioning lead 9, which are caused because the thickness of the supporting plate 5 is larger than that of the positioning lead 9. is formed. Furthermore, the first part 13a has a protrusion 21 to prevent the connecting strip 10 from shifting to the right.
第２の部分１３ｂは外部リード６及び連結細条
８を載置する上面２２を有する。この上面２２と
第１の部分１３ａの第１の載置面１７との間に
は、支持板５と外部リード６との段差に応じた段
差がある。第２の部分１３ｂの突出部２３は連結
細条８の左方向へのずれを防ぐように形成されて
いる。一対の突出部２１，２３の相互間隔はリー
ドフレーム２の長手方向（外部リード６の並置方
向）の移動を妨げないように決定されている。 The second part 13b has an upper surface 22 on which the external leads 6 and the connecting strips 8 rest. Between this upper surface 22 and the first mounting surface 17 of the first portion 13a, there is a step corresponding to the step between the support plate 5 and the external lead 6. The protrusion 23 of the second portion 13b is formed to prevent the connecting strip 8 from shifting to the left. The mutual spacing between the pair of protrusions 21 and 23 is determined so as not to impede movement of the lead frame 2 in the longitudinal direction (direction in which the external leads 6 are arranged side by side).
磁石１６は第３図に示す如くトランジスタチツ
プ３の下部に対応する載置台１３の上面１７の領
域に配設されていると共に、外部リード６のワイ
ヤボンデイング部４ａの下部対向領域に配設され
ている。なお、磁石１６は電磁石であるので、コ
イルと磁心とから成るが、１つのブロツクで説明
的に示されている。 As shown in FIG. 3, the magnet 16 is disposed in an area of the upper surface 17 of the mounting table 13 corresponding to the lower part of the transistor chip 3, and is also disposed in an area facing the lower part of the wire bonding part 4a of the external lead 6. There is. Since the magnet 16 is an electromagnet, it consists of a coil and a magnetic core, but it is shown as one block for explanatory purposes.
ワイヤボンデイングする時には、第４図及び第
５図で説明した場合と同様にリードフレーム組立
体１を用意し、リードフレーム２の下面側を載置
台１３に嵌合させるように配置し、磁石１６を作
動させ、磁石１６でリードフレーム２を吸着す
る。また固定用治具１４によつて従来例と同様に
支持板５に連結された外部リード６の幅広部を押
える。 When wire bonding is performed, the lead frame assembly 1 is prepared in the same manner as described in FIGS. The magnet 16 is activated to attract the lead frame 2. Further, the wide part of the external lead 6 connected to the support plate 5 is held down by the fixing jig 14, as in the conventional example.
次に、従来例と同様にキヤピラリ１２に超音波
振動を加えて、パワートランジスタチツプ３上の
電極にリード細線４の一端を接続し、他端を外部
リード６に接続する。この時、リードフレーム２
は磁石１６で吸着されているので、載置台１３上
を滑動することが抑制され、且つリードフレーム
２のワイヤボンデイング部対応領域の載置台１３
に対する密着性が良くなり、リード細線４の良好
なボンデイングが達成される。 Next, as in the conventional example, ultrasonic vibration is applied to the capillary 12 to connect one end of the thin lead wire 4 to the electrode on the power transistor chip 3 and the other end to the external lead 6. At this time, lead frame 2
Since it is attracted by the magnet 16, it is prevented from sliding on the mounting table 13, and the mounting table 13 in the area corresponding to the wire bonding part of the lead frame 2 is prevented from sliding on the mounting table 13.
The adhesion to the thin lead wire 4 is improved, and good bonding of the thin lead wire 4 is achieved.
次の支持板５のトランジスタチツプ３に対して
ワイヤボンデイングする時には、固定用治具１４
によるリードフレーム２の固定を解除し、且つ磁
石１６による吸着を解除し、第２の部分１３ｂを
上方向に移動することによつてリードフレーム組
立体１を第２図に示すように持ち上げ、支持板５
を第１の部分１３ａから浮かせてリードフレーム
組立体１をこの長手方向即ち外部リード６の並置
方向に移動してキヤピラリ５の下にワイヤボンデ
イングすべき次のトランジスタチツプ３を位置決
めする。なお、リードフレーム組立体１の移動は
連結細条８のガイドピン挿入用孔８ａにガイドピ
ン１１を挿入し、ガイドピン駆動装置１１ａによ
つてガイドピン１１を移動することによつて達成
する。 When performing wire bonding to the next transistor chip 3 on the support plate 5, the fixing jig 14
The lead frame assembly 1 is lifted and supported as shown in FIG. Board 5
is lifted from the first portion 13a and the lead frame assembly 1 is moved in this longitudinal direction, ie, in the direction of juxtaposition of the external leads 6, to position the next transistor chip 3 to be wire bonded under the capillary 5. The movement of the lead frame assembly 1 is achieved by inserting the guide pin 11 into the guide pin insertion hole 8a of the connecting strip 8 and moving the guide pin 11 by the guide pin driving device 11a.
本実施例は次の利点を有する。 This embodiment has the following advantages.
(1) 支持板５を磁石１６によつて吸着するので、
超音波振動時の支持板５即ちリードフレーム２
の滑動が制限され、且つ支持板５が載置台１３
に安定的に支持される。従つて、既存のリード
フレーム及び自動ワイヤボンダーを大幅に変え
ることなしに、超音波ワイヤボンデイングを良
好に行うことができる。(1) Since the support plate 5 is attracted by the magnet 16,
Support plate 5 during ultrasonic vibration, ie lead frame 2
sliding is restricted, and the support plate 5 is placed on the mounting table 13.
is stably supported. Therefore, ultrasonic wire bonding can be performed satisfactorily without significantly changing the existing lead frame and automatic wire bonder.
(2) 支持板５を固定用治具で直接に固定する必要
がないので、キヤピラリ１２の移動の自由度が
低下しない。(2) Since it is not necessary to directly fix the support plate 5 with a fixing jig, the degree of freedom of movement of the capillary 12 is not reduced.
(3) 磁石１６をワイヤボンデイング部に対応して
局所的に配設したので、リードフレーム２の変
形に基づいてワイヤボンデイング部が載置台１
３から浮き上るような状態が生じようとして
も、この浮き上りが磁石１６による吸着によつ
て阻止され、リードフレーム２のワイヤボンデ
イング部対応領域が載置台１３に良好に密着
し、電極（被ボンデイング部分）の良好な固定
状態が得られる。(3) Since the magnets 16 are locally arranged corresponding to the wire bonding parts, the wire bonding parts are aligned with the mounting table 1 based on the deformation of the lead frame 2.
3, this lifting is prevented by the adsorption by the magnet 16, and the area corresponding to the wire bonding part of the lead frame 2 is in close contact with the mounting table 13, and the electrode (to be bonded) A good fixing state of the parts) can be obtained.
(4) 載置台１３の上面がリードフレーム２の下面
の段差に対応した段差を有し、リードフレーム
２の下面の実質的に全面が載置台１３に接する
ように形成され、更に突出部２１，２３を有す
るので、リードフレーム２の外部リード６の延
びる方向の移動を効果的に抑制することができ
る。(4) The upper surface of the mounting table 13 has a step corresponding to the step on the lower surface of the lead frame 2, and substantially the entire lower surface of the lead frame 2 is formed so as to be in contact with the mounting table 13, and the protruding portion 21, 23, the movement of the external leads 6 of the lead frame 2 in the extending direction can be effectively suppressed.
本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。
The present invention is not limited to the above-described embodiments, but can be modified, for example, as follows.
(1) 磁石１６を永久磁石で構成してもよい。そし
て、この永久磁石を載置台１３に移動自在に装
着し、リードフレーム２を吸着することが不要
な時には、リードフレーム２から離間させるよ
うにしてもよい。(1) The magnet 16 may be composed of a permanent magnet. The permanent magnet may be movably mounted on the mounting table 13 and moved away from the lead frame 2 when it is not necessary to attract the lead frame 2.
(2) 磁石１６を載置台１３の上面のほぼ全部に配
置してもよい。(2) The magnet 16 may be arranged on almost the entire upper surface of the mounting table 13.
(3) リードフレーム２の磁石１６で吸着される部
分のみを磁性材料で形成してもよい。(3) Only the portion of the lead frame 2 that is attracted by the magnet 16 may be formed of a magnetic material.
(4) 第６図に示す如く矢印２４を超音波振動方向
とする場合に、この方向に沿つて複数の磁石１
６を配置してもよい。即ちワイヤボンデイング
部を含むトランジスタチツプ３の両側に磁石１
６を配置してもよい。(4) When the arrow 24 is the direction of ultrasonic vibration as shown in FIG.
6 may be placed. That is, magnets 1 are placed on both sides of the transistor chip 3 including the wire bonding part.
6 may be placed.
(5) 載置台１３を例えば３以上に分割し、支持板
５の下部のみを上下に移動するようにしてもよ
い。(5) The mounting table 13 may be divided into, for example, three or more parts, and only the lower part of the support plate 5 may be moved up and down.
(6) リード細線４としてAu線、Al線等の種々の
細線を使用することができる。また、熱圧着法
と超音波振動法とを併用したワイヤボンデイン
グ（ボールボンデイングやステツチボンデイン
グ等）にも適用可能である。(6) Various thin wires such as Au wire and Al wire can be used as the lead thin wire 4. It is also applicable to wire bonding (ball bonding, stitch bonding, etc.) that uses a combination of thermocompression bonding and ultrasonic vibration.
第１図は本発明の実施例に係わるリードフレー
ム組立体及びボンデイング装置を示す断面図、第
２図はリードフレームの移動の状態を示す断面
図、第３図は第１図の載置台とリードフレーム組
立体（破線で示す）の平面図、第４図はリードフ
レーム組立体の平面図、第５図は従来のリードフ
レーム組立体とボンデイング装置を第４図のＶ−
Ｖ線に対応する部分で示す断面図、第６図は磁石
の配置の変形例を示す平面図である。
１……リードフレーム組立体、２……リードフ
レーム、３……トランジスタチツプ、４……リー
ド細線、５……支持板、６……外部リード、１２
……キヤピラリ、１３……載置台、１４……固定
用治具、１６……磁石。
FIG. 1 is a cross-sectional view showing a lead frame assembly and bonding device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the state of movement of the lead frame, and FIG. A plan view of the frame assembly (indicated by broken lines), FIG. 4 is a plan view of the lead frame assembly, and FIG. 5 shows the conventional lead frame assembly and bonding device shown in FIG.
FIG. 6 is a cross-sectional view showing a portion corresponding to the V line, and a plan view showing a modification of the arrangement of the magnets. DESCRIPTION OF SYMBOLS 1... Lead frame assembly, 2... Lead frame, 3... Transistor chip, 4... Thin lead wire, 5... Support plate, 6... External lead, 12
... Capillary, 13 ... Mounting table, 14 ... Fixing jig, 16 ... Magnet.
Claims (1)
ムと前記支持板の表面に固着された電子素子又は
回路基板とから成るリードフレーム組立体におけ
る前記電子素子又は回路基板と前記外部リードと
をリード細線で相互に接続するためのワイヤボン
デイング装置であつて、 前記リードフレームを載置するための載置台
と、 前記リード細線を前記電子素子又は回路基板と
前記外部リードとに超音波を利用して接続するた
めのキヤピラリと、 前記載置台の前記リードフレームの前記支持板
が載置された領域に配置された第１の磁石と、 前記載置台の前記リードフレームの前記外部リ
ードが載置される領域に配置された第２の磁石と
を備え、且つ前記リードフレームは前記第１及び
第２の磁石で吸引されるように磁性材料から成
り、 且つ前記第１及び第２の磁石は前記キヤピラリ
の超音波振動方向に所定間隔を有して配置され、 且つ前記載置台には前記キヤピラリの超音波振
動方向における前記リードフレームの一端及び他
端の位置ずれを防ぐ第１及び第２の突出部が設け
られていることを特徴とするワイヤボンデイング
装置。[Scope of Claims] 1. The electronic element or circuit board and the external lead in a lead frame assembly comprising a lead frame having a support plate and an external lead, and an electronic element or circuit board fixed to the surface of the support plate. A wire bonding device for mutually connecting the lead frame with a thin lead wire, the wire bonding device comprising: a mounting table for mounting the lead frame; and a wire bonding device for connecting the lead wire to the electronic element or circuit board and the external lead by applying ultrasonic waves. a first magnet disposed in an area where the support plate of the lead frame of the mounting base is mounted; and a first magnet disposed in the area where the support plate of the lead frame of the mounting base is mounted; a second magnet disposed in a region where the lead frame is placed, and the lead frame is made of a magnetic material so as to be attracted by the first and second magnets, and the first and second magnets are first and second leads arranged at a predetermined interval in the direction of ultrasonic vibration of the capillary, and on the mounting base to prevent misalignment of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary; A wire bonding device characterized by being provided with a protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62336118A JPH01179337A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62336118A JPH01179337A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01179337A JPH01179337A (en) | 1989-07-17 |
| JPH0524665B2 true JPH0524665B2 (en) | 1993-04-08 |
Family
ID=18295878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62336118A Granted JPH01179337A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179337A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113438A (en) * | 1983-11-24 | 1985-06-19 | Nec Corp | Base ribbon holding mechanism |
| JPS61296730A (en) * | 1985-06-26 | 1986-12-27 | Hitachi Ltd | Wire bonder |
-
1987
- 1987-12-30 JP JP62336118A patent/JPH01179337A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113438A (en) * | 1983-11-24 | 1985-06-19 | Nec Corp | Base ribbon holding mechanism |
| JPS61296730A (en) * | 1985-06-26 | 1986-12-27 | Hitachi Ltd | Wire bonder |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01179337A (en) | 1989-07-17 |
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