JPH0573343B2 - - Google Patents
Info
- Publication number
- JPH0573343B2 JPH0573343B2 JP62336117A JP33611787A JPH0573343B2 JP H0573343 B2 JPH0573343 B2 JP H0573343B2 JP 62336117 A JP62336117 A JP 62336117A JP 33611787 A JP33611787 A JP 33611787A JP H0573343 B2 JPH0573343 B2 JP H0573343B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- capillary
- support plate
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78743—Suction holding means
- H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置等のリードフレーム上に形
成された電極もしくはリードフレーム上に固着さ
れた半導体素子又は回路基板上の電極に対するリ
ード細線の接続に好適な超音波利用のワイヤボン
デイング装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to connection of thin lead wires to electrodes formed on lead frames of semiconductor devices, semiconductor elements fixed on lead frames, or electrodes on circuit boards. The present invention relates to a wire bonding device using ultrasonic waves suitable for.
超音波振動を利用したワイヤボンデイングは周
知であり、例えば第４図に示す樹脂封止型パワー
トランジスタの製造にも利用されている。第４図
に示すリードフレーム組立体１は、リードフレー
ム２とパワートランジスタチツプ３とリード細線
４から成る。リードフレーム２は支持板５、支持
板５の一端に配置された外部リード６、外部リー
ド６を平行に連結するタイバー７及び第１の連結
細条８、支持板５の他端に連結された位置決めリ
ード９、位置決めリード９を平行に連係する第２
の連結細条１０から成る。リードフレーム２は図
示のように、複数個の支持板５が平行に連結され
た多素子取り用のリードフレームとなつている。
Wire bonding using ultrasonic vibration is well known, and is also used, for example, in manufacturing a resin-sealed power transistor shown in FIG. The lead frame assembly 1 shown in FIG. 4 consists of a lead frame 2, a power transistor chip 3, and a thin lead wire 4. The lead frame assembly 1 shown in FIG. The lead frame 2 is connected to a support plate 5, an external lead 6 disposed at one end of the support plate 5, a tie bar 7 connecting the external leads 6 in parallel, a first connecting strip 8, and the other end of the support plate 5. The positioning lead 9, the second link which connects the positioning lead 9 in parallel.
It consists of 10 connecting strips. As shown in the figure, the lead frame 2 is a multi-element lead frame in which a plurality of support plates 5 are connected in parallel.
リードフレーム組立体１を作製する際には、リ
ードフレーム２の支持板５上にパワートランジス
タチツプ３を固着し、続いてパワートランジスタ
チツプ３上の電極と外部リード６即ち外部接続電
極とをリード細線４で接続する。ここで、パワー
トランジスタチツプ３の固着及びリード細線４の
接続はそれぞれ周知のダイボンデイング及びワイ
ヤボンデイングにて行われる。しかる後、リード
フレーム組立体１に樹脂封止体１５を周知のトラ
ンスフアモールドにより形成し、所定の工程を施
した後にタイバー７、第１及び第２の連結細条
８，１０及び位置決めリード９を切断除去するこ
とによつて個別化された樹脂封止型トランジスタ
とする。 When manufacturing the lead frame assembly 1, the power transistor chip 3 is fixed on the support plate 5 of the lead frame 2, and then the electrodes on the power transistor chip 3 and the external leads 6, that is, the external connection electrodes are connected with thin lead wires. Connect with 4. Here, fixing of the power transistor chip 3 and connection of the thin lead wires 4 are performed by well-known die bonding and wire bonding, respectively. Thereafter, a resin sealing body 15 is formed on the lead frame assembly 1 by well-known transfer molding, and after performing a predetermined process, the tie bar 7, the first and second connecting strips 8, 10, and the positioning lead 9 are formed. By cutting and removing the resin-sealed transistors, individualized resin-sealed transistors are obtained.
第５図に示すリード細線４を超音波振動を利用
して接続するためのボンデイング装置は、周知の
自動ワイヤボンダーのキヤピラリ１２と、このキ
ヤピラリ１２の駆動装置１２ａと、載置台１３
と、固定用治具１４と、この固定用治具１４の駆
動装置１４ａと、ガイドピン１１と、このガイド
ピン１１の駆動装置１１ａとから成る。ワイヤボ
ンデイング時には、キヤピラリ１２からリード細
線４を繰り出し、リード細線４をトランジスタチ
ツプ３の電極にキヤピラリ１２で押し付けると共
にキヤピラリ１２に電極の表面と平行な方向に超
音波振動を加える。つまり、リード細線４を電極
に押し付けこすり合わせて接続する。リードフレ
ーム２の外部リード６（外部接続用電極）にワイ
ヤボンデイングをする時はリードフレーム２を載
置台１３の上に置き、固定用治具１４で所定の箇
所を押えつけて行う。 The bonding device shown in FIG. 5 for connecting thin lead wires 4 using ultrasonic vibration includes a capillary 12 of a well-known automatic wire bonder, a drive device 12a for this capillary 12, and a mounting table 13.
, a fixing jig 14, a driving device 14a for the fixing jig 14, a guide pin 11, and a driving device 11a for the guide pin 11. During wire bonding, a thin lead wire 4 is let out from a capillary 12, and the thin lead wire 4 is pressed against the electrode of the transistor chip 3 by the capillary 12, and ultrasonic vibration is applied to the capillary 12 in a direction parallel to the surface of the electrode. That is, the thin lead wire 4 is pressed against the electrode and rubbed together to connect. When wire bonding is performed on the external leads 6 (electrodes for external connection) of the lead frame 2, the lead frame 2 is placed on the mounting table 13, and the fixing jig 14 is used to press the lead frame 2 at a predetermined position.
ところで、この超音波振動法を利用したワイヤ
ボンデイングには以下のような問題がある。
By the way, wire bonding using this ultrasonic vibration method has the following problems.
リード細線４を接続すべき電極（第５図では、
パワートランジスタチツプ３上の電極）にキヤピ
ラリ１２で押し付けると、キヤピラリ１２の超音
波振動が接続部分を通じてリードフレーム２に加
わる。この振動により、リードフレーム２は僅か
ではあるがその振動方向に載置台１３上を滑動す
る。この滑動が生じるとリード細線４の接続部
（ワイヤボンデイング部）に超音波振動が十分に
加らず接続が不十分となる。また、滑動が生じな
い場合であつても、リードフレーム２の変形等に
基づいて載置台１３に対するリードフレーム２の
密着性が悪く、ワイヤボンデイングを良好に行う
ことができないことがある。この種の問題は固定
用治具１４によるリードフレーム２の固定箇所が
ワイヤボンデイング部から離れているために生じ
るので、本発明者は固定用治具１４を多数個設け
て多数箇所でリードフレーム２を固定する方法を
試みた。しかし、キヤピラリ１２の移動を妨害し
ないように多数の固定箇所を設けてリードフレー
ム２を十分に固定することはできなかつた。 The electrode to which the thin lead wire 4 should be connected (in Fig. 5,
When the capillary 12 is pressed against the electrode (on the power transistor chip 3), the ultrasonic vibration of the capillary 12 is applied to the lead frame 2 through the connecting portion. Due to this vibration, the lead frame 2 slides on the mounting table 13 in the direction of the vibration, albeit slightly. When this sliding occurs, sufficient ultrasonic vibration is not applied to the connecting portion (wire bonding portion) of the thin lead wire 4, resulting in insufficient connection. Further, even if no sliding occurs, the adhesion of the lead frame 2 to the mounting table 13 may be poor due to deformation of the lead frame 2, etc., and wire bonding may not be performed satisfactorily. This kind of problem occurs because the fixing location of the lead frame 2 by the fixing jig 14 is far from the wire bonding part, so the inventor provided a large number of fixing jigs 14 to fix the lead frame 2 at multiple locations. I tried a method to fix it. However, it has not been possible to sufficiently fix the lead frame 2 by providing a large number of fixing points so as not to interfere with the movement of the capillary 12.
そこで、本発明の目的はキヤピラリの移動の自
由度を低下させることなしに良好なワイヤボンデ
イングを行うことができる装置を提供することに
ある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an apparatus that can perform good wire bonding without reducing the degree of freedom of movement of a capillary.
［問題点を解決するための手段］
上記目的を達成するための本発明は、支持板と
外部リードとを有するリードフレームと前記支持
板の表面に固着された電子素子又は回路基板とか
ら成るリードフレーム組立体における前記電子素
子又は回路基板と前記外部リードとをリード細線
で相互に接続するためのワイヤボンデイング装置
であつて、前記リードフレームを載置するための
載置台と、前記載置台に前記リードフレームを吸
引で保持するための吸引手段と、前記リード細線
を前記電子素子又は回路基板と前記外部リードと
に超音波を利用して接続するためのキヤピラリと
を備え、前記載置台の前記支持板を載置する部分
に第１の吸引孔が設けられ、前記載置台の前記外
部リードを載置する部分に複数個の第２の吸引孔
が設けられ、前記第１の吸引孔は前記支持板の底
面の複数箇所を吸引するように構成され、前記支
持板の底面の前記複数箇所は前記キヤピラリの超
音波振動方向において相互に所定間隔を有してお
り、前記複数個の第２の吸引孔は前記キヤピラリ
の超音波振動方向に所定間隔を有して配置され、
前記第１及び第２の吸引孔は前記吸引手段に結合
され、前記載置台には前記キヤピラリの超音波振
動方向における前記リードフレームの一端及び他
端の位置ずれを防ぐ第１及び第２の突出部設けら
れていることを特徴とするワイヤボンデイング装
置に係わるものである。[Means for Solving the Problems] To achieve the above object, the present invention provides a lead comprising a lead frame having a support plate and an external lead, and an electronic element or circuit board fixed to the surface of the support plate. A wire bonding device for mutually connecting the electronic element or circuit board and the external lead in a frame assembly with a thin lead wire, the wire bonding device comprising: a mounting base for mounting the lead frame; The support of the mounting table includes a suction means for holding the lead frame by suction, and a capillary for connecting the thin lead wire to the electronic element or circuit board and the external lead using ultrasonic waves. A first suction hole is provided in a portion where the plate is placed, a plurality of second suction holes are provided in a portion of the mounting base where the external lead is placed, and the first suction hole is connected to the support. The plurality of second suction points are configured to suck a plurality of places on the bottom surface of the plate, and the plurality of places on the bottom surface of the support plate have a predetermined interval from each other in the ultrasonic vibration direction of the capillary. The holes are arranged at predetermined intervals in the ultrasonic vibration direction of the capillary,
The first and second suction holes are coupled to the suction means, and the mounting table has first and second protrusions that prevent displacement of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary. The present invention relates to a wire bonding device characterized in that it is provided with a portion.
なお、第１の吸引孔は、例えば第１図に示す支
持板５を吸引するための複数の吸引孔１６、又は
第６図に示す環状の開口１９を有する吸引孔であ
る。 Note that the first suction hole is, for example, a plurality of suction holes 16 for suctioning the support plate 5 shown in FIG. 1, or a suction hole having an annular opening 19 shown in FIG. 6.
［発明の作用及び効果］ 本発明は次の作用効果を有する。[Action and effect of the invention] The present invention has the following effects.
(イ) 第１の吸引孔は前記支持板の底面の複数箇所
を吸引し、この複数箇所はキヤピラリの超音波
振動方向において所定間隔を有しているので、
超音波ボンデイング時に支持板及び外部リード
を安定的に保持することができる。(a) The first suction hole suctions a plurality of places on the bottom surface of the support plate, and the plurality of places have a predetermined interval in the direction of ultrasonic vibration of the capillary.
The support plate and external leads can be stably held during ultrasonic bonding.
(ロ) キヤピラリの超音波振動方向におけるリード
フレームの一端及び他端の位置ずれを防ぐ第１
及び第２の突出部を設けたので、リードフレー
ムの超音波振動方向の移動を防いで、ワイヤボ
ンデイングを良好に行うことができる。(b) A first method to prevent misalignment of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary.
Since the second protrusion is provided, movement of the lead frame in the ultrasonic vibration direction can be prevented and wire bonding can be performed satisfactorily.
(ハ) 支持板と外部リードとの両方を吸引するの
で、リードフレームの安定的保持が可能にな
る。(c) Since both the support plate and the external lead are suctioned, the lead frame can be held stably.
［実施例］
次に、本発明の実施例に係わる樹脂封止型パワ
ートランジスタの製造方法を説明する。但し、第
１図〜第３図で符号１〜１４及び８ａ，１１ａ，
１２ａ，１４ａで示す部分は第４図及び第５図で
同一の符号で示す部分と実質的に同一であるの
で、その説明を省略する。[Example] Next, a method for manufacturing a resin-sealed power transistor according to an example of the present invention will be described. However, in FIGS. 1 to 3, the symbols 1 to 14 and 8a, 11a,
Since the parts indicated by 12a and 14a are substantially the same as the parts indicated by the same reference numerals in FIGS. 4 and 5, their explanation will be omitted.
第１図〜第３図において第４図及び第５図と相
違している点は、載置台１３を第１の部分１３ａ
と第２の部分１３ｂに分割し、それぞれに、吸引
孔１６を設け、ここにパイプ１７を介して真空ポ
ンプ１８を結合したことである。なお、吸引孔１
６の開口１９は載置台１３の表面に位置する。 The difference between FIGS. 1 to 3 from FIGS. 4 and 5 is that the mounting table 13 is
and a second part 13b, each of which is provided with a suction hole 16, and a vacuum pump 18 is connected thereto via a pipe 17. In addition, suction hole 1
The opening 19 of 6 is located on the surface of the mounting table 13.
各部を更に詳しく説明すると、載置台１３は支
持板５、位置決めリード９及び連結細条１０を載
せる第１の部分１３ａと、外部リード６及び連結
細条８を載せる第２の部分１３ｂとの組み合せか
ら成り、第２の部分１３ｂを第１の部分１３ａに
相対的に移動することができるように構成されて
いる。 To explain each part in more detail, the mounting table 13 is a combination of a first part 13a on which the support plate 5, positioning leads 9 and connecting strips 10 are placed, and a second part 13b on which the external leads 6 and connecting strips 8 are placed. The second portion 13b is configured to be movable relative to the first portion 13a.
第１の部分１３ａには支持板５が載置される第
１の載置面２０と、位置決めリード９及び連結細
条１０が載置される第２の載置面２１が設けら
れ、第１及び第２の載置面２０，２１の境界に傾
斜面２２が設けられている。即ち、支持板５の肉
厚が位置決めリード９の肉厚よりも大きいために
生じている段差部２３及び支持板５の下面及び位
置決めリード９の下面に対応するように第１の部
分１３ａの上面が形成されている。更に、第１の
部分１３ａは連結細条１０の右方向へのずれを防
ぐための突出部２４を有する。 The first portion 13a is provided with a first mounting surface 20 on which the support plate 5 is mounted, and a second mounting surface 21 on which the positioning lead 9 and the connecting strip 10 are mounted. An inclined surface 22 is provided at the boundary between the second mounting surfaces 20 and 21. That is, the upper surface of the first portion 13a is adjusted so as to correspond to the stepped portion 23 and the lower surface of the supporting plate 5 and the lower surface of the positioning lead 9, which are caused because the thickness of the supporting plate 5 is larger than that of the positioning lead 9. is formed. Furthermore, the first part 13a has a projection 24 for preventing the connecting strip 10 from shifting to the right.
第２の部分１３ｂは外部リード６及び連結細条
８を載置する上面２５を有する。この上面２５と
第１の部分１３ａの第１の載置面２０との間に
は、支持板５と外部リード６の段差に応じた段差
がある。第２の部分１３ｂの突出部２６は連結細
条８の左方向へのずれを防ぐように形成されてい
る。但し、第１及び第２の突出部２４，２６の相
互間はリードフレーム２の幅（外部リード６の延
びる方向の幅）方向の移動を許すように設定され
ている。 The second part 13b has an upper surface 25 on which the external leads 6 and the connecting strips 8 rest. Between this upper surface 25 and the first mounting surface 20 of the first portion 13a, there is a step corresponding to the step between the support plate 5 and the external lead 6. The protrusion 26 of the second portion 13b is formed to prevent the connecting strip 8 from shifting to the left. However, the distance between the first and second protrusions 24 and 26 is set to allow movement in the width direction of the lead frame 2 (width in the direction in which the external leads 6 extend).
吸引孔１６の開口１９は、第３図から明らかな
如く、矢印２７で示すキヤピラリ１２の超音波振
動の方向（外部リード６の延びる方向）に直交し
且つリード細線４のワイヤボンデイング部４ａを
通る直線２８を基準にして一方の側の（左側領
域）と他方の側の領域（右側領域）との両方に配
置されている。トランジスタチツプ３のワイヤボ
ンデイング部４ａに対しては、トランジスタチツ
プ３の４つの角にほぼ対応して４つの開口１９が
配置されている。外部リード６のボンデイング部
４ａにおいては、このボンデイング部４ａを通り
且つ矢印２７で示す超音波振動方向に直交する直
線２９の一方の側と他方の側に１個づつ開口１９
が配置されている。この２つの開口１９とワイヤ
ボンデイング部４ａとはほぼ一直線上に位置す
る。 As is clear from FIG. 3, the opening 19 of the suction hole 16 is perpendicular to the direction of ultrasonic vibration of the capillary 12 (the direction in which the external lead 6 extends) indicated by the arrow 27, and passes through the wire bonding portion 4a of the thin lead wire 4. They are arranged on both one side (left side area) and the other side (right side area) with respect to the straight line 28. For the wire bonding portion 4a of the transistor chip 3, four openings 19 are arranged approximately corresponding to the four corners of the transistor chip 3. In the bonding portion 4a of the external lead 6, there are openings 19, one on one side and one on the other side of a straight line 29 passing through the bonding portion 4a and perpendicular to the ultrasonic vibration direction indicated by the arrow 27.
is located. These two openings 19 and the wire bonding portion 4a are located approximately on a straight line.
ワイヤボンデイングする時には、第４図及び第
５図で説明した場合と同様にリードフレーム組立
体１を用意し、リードフレーム２の下面側を載置
台１３に嵌合させるように配置し、真空ポンプ１
８に結合された吸引孔１６によつてリードフレー
ム２の裏面を吸引する。また固定用治具１４によ
つて従来例と同様に支持板５に連結された外部リ
ード６の幅広部を押える。 When performing wire bonding, the lead frame assembly 1 is prepared in the same manner as described in FIGS.
The back surface of the lead frame 2 is sucked by the suction hole 16 connected to the lead frame 8 . Further, the wide part of the external lead 6 connected to the support plate 5 is held down by the fixing jig 14, as in the conventional example.
次に、従来例と同様にキヤピラリ１２に超音波
振動を加えて、パワートランジスタチツプ３上の
電極にリード細線４の一端を接続し、他端を外部
リード６に接続する。この時、リードフレーム２
は開口１９で真空吸引されているので、載置台１
３上を滑動することが抑制され、且つリードフレ
ーム２のワイヤボンデイング部対応領域の載置台
１３に対する密着性が良くなり、リード細線４の
良好なボンデイングが達成される。 Next, as in the conventional example, ultrasonic vibration is applied to the capillary 12 to connect one end of the thin lead wire 4 to the electrode on the power transistor chip 3 and the other end to the external lead 6. At this time, lead frame 2
is vacuumed through the opening 19, so the mounting table 1
3, and the adhesion of the area corresponding to the wire bonding portion of the lead frame 2 to the mounting table 13 is improved, and good bonding of the thin lead wire 4 is achieved.
次の支持板５のトランジスタチツプ３に対して
ワイヤボンデイングする時には、固定用治具１４
によるリードフレーム２の固定を解除し、且つ真
空ポンプ１８による吸引を中止して、第２の部分
１３ｂを上方向に移動することによつてリードフ
レーム組立体１を第２図に示すように持ち上げ、
支持板５を第１の部分１３ａから浮かせてリード
フレーム組立体１をこの長手方向即ち外部リード
６の並置方向（直線２８の方向）に移動し、キヤ
ピラリ１２の下にワイヤボンデイングすべき次の
トランジスタチツプ３を位置決めする。なお、リ
ードフレーム組立体１の矢印２８の方向の移動は
連結細条８のガイドピン挿入用孔８ａにガイドピ
ン１１を挿入し、ガイドピン駆動装置１１ａによ
つてガイドピン１１を矢印２８の方向に移動する
ことによつて達成する。 When performing wire bonding to the next transistor chip 3 on the support plate 5, the fixing jig 14
The fixation of the lead frame 2 is released, the suction by the vacuum pump 18 is stopped, and the second portion 13b is moved upward, thereby lifting the lead frame assembly 1 as shown in FIG. ,
The support plate 5 is lifted off the first part 13a and the lead frame assembly 1 is moved in this longitudinal direction, that is, in the direction of juxtaposition of the external leads 6 (in the direction of the straight line 28), and the next transistor to be wire bonded is placed under the capillary 12. Position chip 3. To move the lead frame assembly 1 in the direction of the arrow 28, the guide pin 11 is inserted into the guide pin insertion hole 8a of the connecting strip 8, and the guide pin 11 is moved in the direction of the arrow 28 by the guide pin driving device 11a. This is achieved by moving to .
本実施例は次の利点を有する。 This embodiment has the following advantages.
(1) リードフレーム２のワイヤボンデイング部４
ａに対応する領域が開口１９で吸引されるの
で、この領域の載置台１３に対する密着性が良
くなり、良好な超音波ワイヤボンデイングが可
能になる。なお、ワイヤボンデイング部４ａの
直下に開口１９を設けると、キヤピラリ１２に
よるリード細線４の押し付けが弱められるが、
本実施例では直下に開口１９を設けていないの
で、上述の問題が生じない。(1) Wire bonding part 4 of lead frame 2
Since the area corresponding to a is suctioned by the opening 19, the adhesion of this area to the mounting table 13 is improved, and good ultrasonic wire bonding is possible. Note that if the opening 19 is provided directly below the wire bonding part 4a, the pressing of the thin lead wire 4 by the capillary 12 will be weakened;
In this embodiment, since the opening 19 is not provided directly below, the above-mentioned problem does not occur.
(2) リードフレーム２の支持板５を固定用治具で
直接に固定する必要がないので、キヤピラリ１
２の移動の自由度を低下させないでトランジス
タチツプ３に対するワイヤボンデイングを行う
ことができる。(2) Since it is not necessary to directly fix the support plate 5 of the lead frame 2 with a fixing jig, the capillary 1
Wire bonding to the transistor chip 3 can be performed without reducing the degree of freedom of movement of the transistor chip 3.
(3) 開口１９がワイヤボンデイング部４ａを通り
且つキヤピラリ１２の振動方向に直交する直線
２８，２９の両側に配置されているので、キヤ
ピラリ１２の超音波振動方向にリードフレーム
２が滑動することを有効に防止できる。また、
リードフレーム２の変形に基づく載置台１３に
対する密着性の低下の改善が有効に達成され
る。(3) Since the openings 19 are arranged on both sides of the straight lines 28 and 29 that pass through the wire bonding part 4a and are orthogonal to the vibration direction of the capillary 12, it is possible to prevent the lead frame 2 from sliding in the direction of the ultrasonic vibration of the capillary 12. Can be effectively prevented. Also,
The reduction in adhesion to the mounting table 13 due to the deformation of the lead frame 2 is effectively improved.
(4) 第２図に示すように支持板５を浮かせてリー
ドフレーム２を移動するので、この移動を円滑
に行うことができる。(4) Since the lead frame 2 is moved with the support plate 5 floating as shown in FIG. 2, this movement can be performed smoothly.
(5) 載置台１３の上面がリードフレーム２の下面
の段差に対応した段差を有し、リードフレーム
２の下面の実質的に全面が載置台１３に接する
ように形成され、更に突出部２４，２６を有す
るので、リードフレーム２の外部リード６の延
びる方向の移動を効果的に抑制することができ
る。(5) The upper surface of the mounting table 13 has a step corresponding to the step on the lower surface of the lead frame 2, and substantially the entire lower surface of the lead frame 2 is formed so as to be in contact with the mounting table 13, and the protrusion 24, 26, the movement of the external leads 6 of the lead frame 2 in the extending direction can be effectively suppressed.
本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。
The present invention is not limited to the above-described embodiments, but can be modified, for example, as follows.
(1) 載置台１３を第１及び第２の部分１３ａ，１
３ｂに分離しない構成にしてもよい。また、載
置台１３を３以上に分割してもよい。(1) Place the mounting table 13 between the first and second parts 13a, 1
It is also possible to adopt a configuration in which it is not separated into 3b. Further, the mounting table 13 may be divided into three or more parts.
(2) リード細線４としてAu線、Al線等の種々の
細線を使用することができる。また、熱圧着法
と超音波振動法とを併用したワイヤボンデイン
グ（ボールボンデイングやステツチボンデイン
グ等）にも適用可能である。(2) Various thin wires such as Au wire and Al wire can be used as the lead thin wire 4. It is also applicable to wire bonding (ball bonding, stitch bonding, etc.) that uses a combination of thermocompression bonding and ultrasonic vibration.
(3) リードフレーム２の裏面及び／又は載置台１
３の上面の一部又は全部を粗面又は凹凸面と
し、両者の係合関係を強めてもよい。(3) Back side of lead frame 2 and/or mounting table 1
A part or all of the upper surface of 3 may be made into a rough surface or an uneven surface to strengthen the engagement relationship between the two.
(4) 第６図に示すようにワイヤボンデイングすべ
き電極を含むトランジスタチツプ３を囲むよう
に吸引用開口１９を設けてもよい。(4) As shown in FIG. 6, a suction opening 19 may be provided to surround the transistor chip 3 containing the electrode to be wire bonded.
第１図は本発明の実施例に係わるリードフレー
ム組立体及びボンデイング装置を示す断面図、第
２図はリードフレーム組立体を移動する状態を示
す断面図、第３図は第１図の載置台及びリードフ
レーム組立体（破線で示す）の平面図、第４図は
リードフレーム組立体の平面図、第５図は従来の
リードフレーム組立体とボンデイング装置を第４
図の−線に対応する部分で示す断面図、第６
図は載置台における吸引開口の変形例を示す平面
図である。
１……リードフレーム組立体、２……リードフ
レーム、３……トランジスタチツプ、４……リー
ド細線、５……支持板、６……外部リード、１２
……キヤピラリ、１３……載置台、１４……固定
用治具、１６……吸引孔、１９……開口。
FIG. 1 is a sectional view showing a lead frame assembly and bonding device according to an embodiment of the present invention, FIG. 2 is a sectional view showing a state in which the lead frame assembly is moved, and FIG. 3 is a mounting table shown in FIG. 1. 4 is a plan view of the lead frame assembly, and FIG. 5 is a plan view of the conventional lead frame assembly and bonding device.
Sectional view shown at the part corresponding to the - line in the figure, No. 6
The figure is a plan view showing a modification of the suction opening in the mounting table. DESCRIPTION OF SYMBOLS 1... Lead frame assembly, 2... Lead frame, 3... Transistor chip, 4... Thin lead wire, 5... Support plate, 6... External lead, 12
... Capillary, 13 ... Mounting table, 14 ... Fixing jig, 16 ... Suction hole, 19 ... Opening.
Claims (1)
ムと前記支持板の表面に固着された電子素子又は
回路基板とから成るリードフレーム組立体におけ
る前記電子素子又は回路基板と前記外部リードと
をリード細線で相互に接続するためのワイヤボン
デイング装置であつて、 前記リードフレームを載置するための載置台
と、前記載置台に前記リードフレームを吸引で保
持するための吸引手段と、前記リード細線を前記
電子素子又は回路基板と前記外部リードとに超音
波を利用して接続するためのキヤピラリとを備
え、 前記載置台の前記支持板を載置する部分に第１
の吸引孔が設けられ、 前記載置台の前記外部リードを載置する部分に
複数個の第２の吸引孔が設けられ、 前記第１の吸引孔は前記支持板の底面の複数箇
所を吸引するように構成され、 前記支持板の底面の前記複数箇所は前記キヤピ
ラリの超音波振動方向において相互に所定間隔を
有しており、 前記複数個の第２の吸引孔は前記キヤピラリの
超音波振動方向に所定間隔を有して配置され、 前記第１及び第２の吸引孔は前記吸引手段に結
合され、 前記載置台には前記キヤピラリの超音波振動方
向における前記リードフレームの一端及び他端の
位置ずれを防ぐ第１及び第２の突出部が設けられ
ていることを特徴とするワイヤボンデイング装
置。[Scope of Claims] 1. The electronic element or circuit board and the external lead in a lead frame assembly comprising a lead frame having a support plate and an external lead, and an electronic element or circuit board fixed to the surface of the support plate. A wire bonding device for mutually connecting the lead frame with a thin lead wire, comprising: a mounting table for mounting the lead frame; a suction means for holding the lead frame on the mounting table by suction; a capillary for connecting a thin lead wire to the electronic element or circuit board and the external lead using ultrasonic waves;
a suction hole is provided, a plurality of second suction holes are provided in a portion of the mounting base on which the external lead is placed, and the first suction hole suctions a plurality of locations on the bottom surface of the support plate. The plurality of locations on the bottom surface of the support plate are spaced apart from each other by a predetermined distance in the direction of ultrasonic vibration of the capillary, and the plurality of second suction holes are arranged in the direction of ultrasonic vibration of the capillary. the first and second suction holes are coupled to the suction means, and the mounting table has a position of one end and the other end of the lead frame in the direction of ultrasonic vibration of the capillary. A wire bonding device characterized in that first and second protrusions are provided to prevent misalignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62336117A JPH01179336A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62336117A JPH01179336A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01179336A JPH01179336A (en) | 1989-07-17 |
| JPH0573343B2 true JPH0573343B2 (en) | 1993-10-14 |
Family
ID=18295867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62336117A Granted JPH01179336A (en) | 1987-12-30 | 1987-12-30 | Wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179336A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5545214B2 (en) * | 1973-04-03 | 1980-11-17 | ||
| JPS6060732A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Tokyo Electronics Co Ltd | Bonding device |
| JPS6173343A (en) * | 1984-09-19 | 1986-04-15 | Hitachi Ltd | Wire bonding device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749388Y2 (en) * | 1978-09-14 | 1982-10-29 |
-
1987
- 1987-12-30 JP JP62336117A patent/JPH01179336A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5545214B2 (en) * | 1973-04-03 | 1980-11-17 | ||
| JPS6060732A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Tokyo Electronics Co Ltd | Bonding device |
| JPS6173343A (en) * | 1984-09-19 | 1986-04-15 | Hitachi Ltd | Wire bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01179336A (en) | 1989-07-17 |
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