JPH0523058B2 - - Google Patents
Info
- Publication number
- JPH0523058B2 JPH0523058B2 JP58228421A JP22842183A JPH0523058B2 JP H0523058 B2 JPH0523058 B2 JP H0523058B2 JP 58228421 A JP58228421 A JP 58228421A JP 22842183 A JP22842183 A JP 22842183A JP H0523058 B2 JPH0523058 B2 JP H0523058B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- coupled device
- input
- voltage
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58228421A JPS60120567A (ja) | 1983-12-05 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
US06/672,369 US4625322A (en) | 1983-11-18 | 1984-11-16 | Charge coupled device provided with automatic bias-voltage setting means |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58228421A JPS60120567A (ja) | 1983-12-05 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60120567A JPS60120567A (ja) | 1985-06-28 |
JPH0523058B2 true JPH0523058B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-31 |
Family
ID=16876206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58228421A Granted JPS60120567A (ja) | 1983-11-18 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60120567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145368A (en) * | 1979-04-27 | 1980-11-12 | Toshiba Corp | Charge transfer device |
JPS55150281A (en) * | 1979-05-14 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Charge coupled element device |
-
1983
- 1983-12-05 JP JP58228421A patent/JPS60120567A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60120567A (ja) | 1985-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4139784A (en) | CCD Input circuits | |
US5191398A (en) | Charge transfer device producing a noise-free output | |
US4625322A (en) | Charge coupled device provided with automatic bias-voltage setting means | |
US4159430A (en) | Charge transfer device for processing video-frequency signals | |
US4292677A (en) | Self-refreshed capacitor memory cell | |
US6600513B1 (en) | Charge transfer device | |
JPS6233751B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
EP0280097B1 (en) | Charge transfer device with booster circuit | |
US4758741A (en) | Photosensitive device ensuring an anti-blooming effect | |
JPS6065571A (ja) | 半導体装置 | |
JPH0523058B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
CA1101122A (en) | Low noise ccd input circuit | |
US4374334A (en) | Signal comparator apparatus | |
US5306932A (en) | Charge transfer device provided with improved output structure | |
US4280067A (en) | Semiconductor charge transfer device having a decoupling gate for stopping reverse charge flow | |
US4503550A (en) | Dynamic CCD input source pulse generating circuit | |
JP2679450B2 (ja) | 半導体装置 | |
US4360745A (en) | Depletion capacitance compensator | |
JPH041960B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US5132759A (en) | Solid-state imaging device in which reverse bias voltage is automatically set | |
US5224134A (en) | Charge transfer device having circuit for adjusting the high level of the reset pulse | |
US5381177A (en) | CCD delay line capable of automatic adjustment of an input bias voltage to charge transfer regions | |
JPH06215597A (ja) | 電荷結合装置の入力回路 | |
US4524450A (en) | Automatic adjustment of the amplitudes of plural-phase CCD clocking voltages | |
JPH0680689B2 (ja) | バイアス電圧決定装置 |