JPS60120567A - 電荷結合装置のバイアス電荷決定装置 - Google Patents
電荷結合装置のバイアス電荷決定装置Info
- Publication number
- JPS60120567A JPS60120567A JP58228421A JP22842183A JPS60120567A JP S60120567 A JPS60120567 A JP S60120567A JP 58228421 A JP58228421 A JP 58228421A JP 22842183 A JP22842183 A JP 22842183A JP S60120567 A JPS60120567 A JP S60120567A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- coupled device
- bias
- input
- input section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58228421A JPS60120567A (ja) | 1983-12-05 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
US06/672,369 US4625322A (en) | 1983-11-18 | 1984-11-16 | Charge coupled device provided with automatic bias-voltage setting means |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58228421A JPS60120567A (ja) | 1983-12-05 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60120567A true JPS60120567A (ja) | 1985-06-28 |
JPH0523058B2 JPH0523058B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-31 |
Family
ID=16876206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58228421A Granted JPS60120567A (ja) | 1983-11-18 | 1983-12-05 | 電荷結合装置のバイアス電荷決定装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60120567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145368A (en) * | 1979-04-27 | 1980-11-12 | Toshiba Corp | Charge transfer device |
JPS55150281A (en) * | 1979-05-14 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Charge coupled element device |
-
1983
- 1983-12-05 JP JP58228421A patent/JPS60120567A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145368A (en) * | 1979-04-27 | 1980-11-12 | Toshiba Corp | Charge transfer device |
JPS55150281A (en) * | 1979-05-14 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Charge coupled element device |
Also Published As
Publication number | Publication date |
---|---|
JPH0523058B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-31 |
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