JPH05217984A - Working device and evaluating device for semiconductor - Google Patents

Working device and evaluating device for semiconductor

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Publication number
JPH05217984A
JPH05217984A JP1912092A JP1912092A JPH05217984A JP H05217984 A JPH05217984 A JP H05217984A JP 1912092 A JP1912092 A JP 1912092A JP 1912092 A JP1912092 A JP 1912092A JP H05217984 A JPH05217984 A JP H05217984A
Authority
JP
Japan
Prior art keywords
solution
semiconductor substrate
semiconductor
processing
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1912092A
Other languages
Japanese (ja)
Other versions
JP2924406B2 (en
Inventor
Masaaki Usui
正明 臼井
Yutaka Mihashi
豊 三橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1912092A priority Critical patent/JP2924406B2/en
Publication of JPH05217984A publication Critical patent/JPH05217984A/en
Application granted granted Critical
Publication of JP2924406B2 publication Critical patent/JP2924406B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To obtain a semiconductor working device capable of working the surface of a semiconductor substrate inexpensively and speedy. CONSTITUTION:The device is constituted of working probes 7, capable of supplying the surface of a semiconductor substrate 1 which is to be worked with etching solution, pure water for washing and inert gas for drying, a solutions supplying device 5 supplying said solutions to the working probes 7 through a solution pouring pipe 3, a solutions discharging device 6 discharging the solutions through a solution discharging pipe 4, a moving stage 8 capable of moving the semiconductor substrate 1 freely, a driving unit 9 for the moving stage 8 and a controller 10, connecting these units electrically and carrying the series of operations out smoothly.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体基板表面を任意
の形状に加工する半導体加工装置および半導体評価装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus and a semiconductor evaluation apparatus for processing the surface of a semiconductor substrate into an arbitrary shape.

【0002】[0002]

【従来の技術】図12は現在半導体の加工方法で最も一
般的なレジスト材を用いた写真製版による半導体表面の
加工状況を示す図で、図13はその断面図である。これ
らの図において、1は半導体基板、30はこの半導体基
板1上に塗布し、穴開け加工されたレジスト材である。
2. Description of the Related Art FIG. 12 is a view showing a processing state of a semiconductor surface by photolithography using a resist material most commonly used in a semiconductor processing method at present, and FIG. 13 is a sectional view thereof. In these figures, 1 is a semiconductor substrate, and 30 is a resist material which is applied on the semiconductor substrate 1 and punched.

【0003】次に、その半導体基板1表面が加工される
までの一般的プロセスについて図14(a)〜(f)を
参照して説明する。図14(a)に示す半導体基板(厚
み〜500μm)1上に図14(b)に示すように、レ
ジスト材(エッチングの際にマスクとなるもの)30を
スピン塗布装置で〜数μm厚に塗布した後、このレジス
ト材30を焼成し、乾燥させる。次に、図14(c)に
示すように、写真製版、すなわち加工したい形状のパタ
ーンが形成されたマスクを用い、そのマスクを透過した
光でレジスト材30を化学変化させ除去できるようにす
る。31はこの感光部分である。次に、図14(d)に
示すように、感光部分31を現像,リンス処理により除
去する。このようにパターニングされたレジスト材30
を加工のためのエッチング液(酸やアルカリ)のマスク
として用いる。次に、図14(e)に示すように、任意
の酸またはアルカリ溶液または反応性ガス等と半導体基
板1を反応させ、エッチング除去する。この際、掘られ
る形状および深さは写真製版で形成したレジストマスク
およびエッチング条件(溶液の種類,濃度,温度,時間
等)で決定される。次に、図14(f)に示すように、
所望の形状にエッチングされた半導体基板1上の不要な
レジスト材30を、有機溶剤あるいは反応性ガスを用い
て除去する。上記のように、一連のプロセスを経て、半
導体基板1上に所望のパターンが位置精度をおよそ±1
μm以下、深さ精度を±0.1〜0.2μm(ウエット
エッチング)で形成される。
Next, a general process until the surface of the semiconductor substrate 1 is processed will be described with reference to FIGS. 14 (a) to 14 (f). As shown in FIG. 14B, a resist material (which serves as a mask at the time of etching) 30 is formed on the semiconductor substrate (thickness to 500 μm) 1 shown in FIG. After application, the resist material 30 is baked and dried. Next, as shown in FIG. 14C, photolithography, that is, using a mask on which a pattern having a shape to be processed is formed, the resist material 30 is chemically changed by light transmitted through the mask so that the resist material 30 can be removed. Reference numeral 31 is this photosensitive portion. Next, as shown in FIG. 14D, the photosensitive portion 31 is removed by developing and rinsing. Resist material 30 patterned in this way
Is used as a mask for an etching solution (acid or alkali) for processing. Next, as shown in FIG. 14E, the semiconductor substrate 1 is reacted with an arbitrary acid or alkali solution, reactive gas or the like, and removed by etching. At this time, the shape and depth to be dug are determined by the resist mask formed by photolithography and the etching conditions (type of solution, concentration, temperature, time, etc.). Next, as shown in FIG.
The unnecessary resist material 30 on the semiconductor substrate 1 etched into a desired shape is removed by using an organic solvent or a reactive gas. As described above, a desired pattern has a positional accuracy of about ± 1 on the semiconductor substrate 1 through a series of processes.
It is formed with a depth accuracy of ± 0.1 to 0.2 μm (wet etching).

【0004】[0004]

【発明が解決しようとする課題】従来例においては、半
導体基板表面を加工する場合、以上のようなプロセスを
経て形成されているため、位置精度をそれ程問題にしな
い場合(±数百μm)でも、その加工に多大の時間およ
び加工コストがかかるという問題点があった。また、薄
膜結晶が多層積層された半導体基板の薄膜結晶の品質評
価を各層について行う場合にも上記と同様の工程が必要
で、時間と加工コストがかかるという同様の問題点があ
った。
In the conventional example, when the surface of the semiconductor substrate is processed, it is formed through the above process, so that even if the positional accuracy does not matter so much (± several hundred μm). However, there has been a problem that the processing requires a lot of time and processing cost. Further, when the quality evaluation of the thin film crystal of the semiconductor substrate in which the thin film crystals are laminated in multiple layers is performed for each layer, the same steps as above are required, and there is a similar problem that it takes time and processing cost.

【0005】本発明は、上記のような問題点を解消する
ためになされたもので、半導体基板表面を短時間で簡単
に、かつ低コストで加工できる半導体加工装置を得るこ
とを目的としており、さらに、この装置を応用した半導
体評価装置を提供することを目的とする。
The present invention has been made in order to solve the above problems, and an object thereof is to obtain a semiconductor processing apparatus capable of processing the surface of a semiconductor substrate easily in a short time and at low cost. Furthermore, it aims at providing the semiconductor evaluation apparatus which applied this apparatus.

【0006】[0006]

【課題を解決するための手段】本発明にかかる半導体加
工装置は、半導体基板表面の加工部分のみに前記半導体
基板表面を溶解する溶液を供給し、かつ排出できるよう
にするとともに加工後にこの加工部分を洗浄,乾燥でき
るようにし、さらに、加工してはならない部分を加工し
ない構成としたものである。また、本発明にかかる半導
体評価装置は、洗浄工程中に半導体基板の加工部分に材
料分析用の光ファイバを挿入して光を照射し、他の光フ
ァイバで加工部分の光を受光してこれを分析して評価す
る構成としたものである。
In a semiconductor processing apparatus according to the present invention, a solution that dissolves the surface of a semiconductor substrate can be supplied to and discharged only from a processed portion of the surface of a semiconductor substrate, and the processed portion can be processed after processing. Is designed so that it can be washed and dried, and the portion that should not be processed is not processed. Further, the semiconductor evaluation apparatus according to the present invention is such that an optical fiber for material analysis is inserted into a processed portion of a semiconductor substrate during a cleaning process to irradiate light, and another optical fiber receives the light of the processed portion and receives the light. Is analyzed and evaluated.

【0007】[0007]

【作用】本発明にかかる半導体加工装置は、半導体基板
の所望の位置にこの半導体基板をエッチングする溶液を
供給し、かつそれ以外の部分へ溶液がしみださないよう
になっているため、所望の位置のみ半導体基板表面を加
工することができる。また、溶液を供給するだけでな
く、エッチング後の溶液の排出,エッチング液の洗浄,
洗浄後の乾燥を逐次自動的に行うことができる。さら
に、写真工程を用いずにエッチング加工が行え、かつ必
要な場所に必要最小限のエッチング液を供給することが
できる。
In the semiconductor processing apparatus according to the present invention, the solution for etching the semiconductor substrate is supplied to a desired position of the semiconductor substrate, and the solution does not seep out to other portions. The surface of the semiconductor substrate can be processed only at the position. In addition to supplying the solution, discharging the solution after etching, cleaning the etching solution,
Drying after washing can be sequentially and automatically performed. Furthermore, the etching process can be performed without using a photographic process, and the minimum necessary etching liquid can be supplied to a necessary place.

【0008】また、本発明にかかる半導体評価装置にお
いては、半導体基板表面に薄膜結晶が多数積層されてい
る場合でも、加工プローブ内で測定端子が各層をエッチ
ングしながら逐次評価するため、単時間で複雑な構造を
した半導体基板の深さ方向の材料品質に関する情報を得
ることができる。
Further, in the semiconductor evaluation apparatus according to the present invention, even when a large number of thin film crystals are laminated on the surface of the semiconductor substrate, the measuring terminals sequentially evaluate each layer while etching each layer in the processing probe, so that it takes a single time. It is possible to obtain information on the material quality in the depth direction of a semiconductor substrate having a complicated structure.

【0009】[0009]

【実施例】以下、本発明の一実施例を図について説明す
る。図1は本発明の一実施例を示す半導体加工装置の構
成図であり、図2は図1の加工プローブ7の外観斜視図
である。これらの図において、1は半導体基板、2は溶
液封入器で、半導体基板1上にエッチングのための溶
液,洗浄液,乾燥用の不活性ガス等を供給する溶液注入
管3の先端を囲んでおり、半導体基板1表面に供給され
た溶液が所望の位置以外をエッチングするのを防ぐた
め、溶液を閉じ込めるものである。4は前記溶液封入器
2の内部に挿入され、半導体基板1と溶液封入器2に囲
まれた空間の溶液を排出する溶液排出管、5は前記溶液
注入管3の一端に取り付けられ、溶液,洗浄液,不活性
ガス等を溶液注入管3に供給する溶液類供給装置、6は
前記溶液排出管4の一端に取り付けられ、溶液封入器2
内部の溶液および不活性ガス等を排出する溶液類排出装
置、7は前記した加工プローブで、溶液封入器2,溶液
注入管3,溶液排出管4から構成されている。8は前記
半導体基板1をのせ加工プローブ7の位置に半導体基板
1を移動させる移動ステージ、9はこの移動ステージ8
を上下左右に移動させる駆動部、10はこの駆動部9,
溶液類供給装置5,溶液類排出装置6と電気的に接続さ
れ、これら各部を連動して動かすための制御信号を出す
コントローラである。なお、溶液封入器2は実際には微
小なものであるが、構造を分かり易くするため拡大して
示している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a block diagram of a semiconductor processing apparatus showing an embodiment of the present invention, and FIG. 2 is an external perspective view of the processing probe 7 of FIG. In these figures, 1 is a semiconductor substrate, 2 is a solution enclosure, and surrounds the tip of a solution injection pipe 3 for supplying a solution for etching, a cleaning liquid, an inert gas for drying, etc. onto the semiconductor substrate 1. In order to prevent the solution supplied to the surface of the semiconductor substrate 1 from etching other than a desired position, the solution is confined. 4 is a solution discharge pipe which is inserted into the solution enclosure 2 and discharges the solution in the space surrounded by the semiconductor substrate 1 and the solution enclosure 2. 5 is attached to one end of the solution injection pipe 3, A solution supply device for supplying a cleaning liquid, an inert gas, etc. to the solution injection pipe 3, 6 is attached to one end of the solution discharge pipe 4, and the solution enclosure 2
The solution discharge device for discharging the internal solution, the inert gas and the like, 7 is the above-mentioned processing probe, and is composed of the solution enclosure 2, the solution injection pipe 3, and the solution discharge pipe 4. 8 is a moving stage for placing the semiconductor substrate 1 and moving the semiconductor substrate 1 to the position of the processing probe 7, and 9 is this moving stage 8
Drive unit 10 for moving the up, down, left and right
The controller is electrically connected to the solution supply device 5 and the solution discharge device 6, and outputs a control signal for moving these parts in conjunction with each other. Although the solution encapsulator 2 is actually a very small one, it is shown enlarged in order to make the structure easy to understand.

【0010】次に、本発明の動作を図3を参照して説明
する。なお、(1)〜(22)は各ステップを示す。ま
ず、加工する半導体基板1が搬送装置または手動により
移動させられ(1)、移動ステージ8上の所定の位置に
セットされる(2)。次に移動ステージ8が半導体基板
1上の加工位置に加工プローブ7が接するように移動す
る(3)。次に半導体基板1上の加工位置と加工プロー
ブ7の先端が一致したら(4)、溶液類供給装置5から
純水を供給する(5)。また、溶液封入器2内部の純水
の液量が一定量になるように溶液類排出装置6が動作す
る(6)。タイマにより設定時間処理を行い(7)、そ
の後純水の供給をストップする(8)。溶液封入器2内
が空になったら溶液類排出装置6がストップし(9)、
溶液類供給装置5からエッチング液を供給し(10)、
エッチング液量が一定となるように溶液類排出装置6が
動作する(11)。その後、タイマ設定時間に従って処
理され(12)、エッチングが終了したらエッチング液
の供給をストップし(13)、溶液封入器2内が空にな
たっら溶液類排出装置6をストップし(14)、純水を
供給する(15)。設定時間洗浄処理を行った後(1
6)、純水供給をストップし(17)、溶液類供給装置
5より不活性ガスを供給し(18)、設定時間乾燥処理
を行い(19)、溶液封入器2内部へ送り込まれた不活
性ガスにより加工部分が乾燥したところで不活性ガスの
供給をストップし(20)、一点の加工が完了する。そ
の後、設定場所すべての加工が完了したか判定し(2
1)、他の加工場所があれば移動ステージ8が移動し、
ステップ(2)に戻り同様な加工を開始する。すべての
加工ポイントが完了したら半導体基板1をステージ8か
らもとの場所、例えばウエハバスケット等へもどし(2
2)、1枚の半導体基板1の加工が終了となる。半導体
基板1が多数ある場合は、この動作が繰り返される。
Next, the operation of the present invention will be described with reference to FIG. Note that (1) to (22) indicate each step. First, the semiconductor substrate 1 to be processed is moved by a transfer device or manually (1) and set at a predetermined position on the moving stage 8 (2). Next, the moving stage 8 moves so that the processing probe 7 contacts the processing position on the semiconductor substrate 1 (3). Next, when the processing position on the semiconductor substrate 1 and the tip of the processing probe 7 coincide with each other (4), pure water is supplied from the solution supply device 5 (5). Further, the solution discharge device 6 operates so that the amount of pure water in the solution enclosure 2 becomes constant (6). The set time is processed by the timer (7), and then the pure water supply is stopped (8). When the inside of the solution enclosure 2 becomes empty, the solution discharge device 6 stops (9),
The etching liquid is supplied from the solution supplying device 5 (10),
The solution discharging device 6 operates so that the amount of the etching liquid becomes constant (11). After that, it is processed according to the timer setting time (12), when the etching is finished, the supply of the etching solution is stopped (13), and the solution ejecting device 6 is stopped even if the inside of the solution enclosure 2 is empty (14), Pure water is supplied (15). After cleaning for a set time (1
6), the pure water supply is stopped (17), an inert gas is supplied from the solution supply device 5 (18), and a drying process is performed for a set time (19), and the inert gas fed into the solution enclosure 2 is inactivated. When the processed portion is dried by the gas, the supply of the inert gas is stopped (20), and the processing of one point is completed. After that, it is judged whether the processing at all the set locations is completed (2
1) If there is another processing place, the moving stage 8 moves,
Returning to step (2), similar processing is started. When all the processing points are completed, the semiconductor substrate 1 is returned from the stage 8 to the original position, for example, a wafer basket (2
2) The processing of one semiconductor substrate 1 is completed. When there are many semiconductor substrates 1, this operation is repeated.

【0011】なお、上記実施例では、溶液封入器2の先
端部分には何の工夫もないが、図4,図5に示すよう
に、先端部分にシール材11を設けることにより、さら
に、溶液の外部への漏れを防ぐ効果が高まる。また、溶
液封入器2内部の溶液注入管3と溶液排出管4の配置
を、図4,図5に示すように溶液注入管3を中心として
その周りを溶液排出管4で囲むように配置することによ
って、より効果的に溶液を排出することが可能である。
これも溶液封入器2の外部に溶液が漏れるのを防ぐ効果
を高めるのに有効である。
In the above embodiment, the tip portion of the solution encapsulator 2 is not devised. However, as shown in FIGS. The effect of preventing leakage to the outside increases. Further, the solution injection pipe 3 and the solution discharge pipe 4 inside the solution encapsulator 2 are arranged such that the solution injection pipe 3 is centered and surrounded by the solution discharge pipe 4 as shown in FIGS. 4 and 5. Thus, the solution can be discharged more effectively.
This is also effective in enhancing the effect of preventing the solution from leaking to the outside of the solution enclosure 2.

【0012】また、上記実施例では、半導体基板1の上
部から溶液を供給するように移動ステージ8および加工
プローブ7を配置しているが、図6,図7に示すように
半導体基板1表面が下に向くように加工プローブ7,移
動ステージ8を配置した場合、供給溶液が半導体基板1
表面にたまらず、すぐ下方へ流れる構造になるので、加
工精度制御性が向上する構造となる。
Further, in the above embodiment, the moving stage 8 and the processing probe 7 are arranged so as to supply the solution from above the semiconductor substrate 1. However, as shown in FIGS. When the processing probe 7 and the moving stage 8 are arranged so as to face downward, the supply solution is the semiconductor substrate 1
Since the structure is such that it does not accumulate on the surface and flows immediately downward, it is a structure in which the processing accuracy controllability is improved.

【0013】次に、上記実施例の半導体加工装置に設け
た半導体評価装置の一実施例について説明する。図8は
本発明の半導体評価装置の一実施例の構成を示す図で、
図1と同一符号は同一構成部分を示し、12は前記加工
プローブ7内部に挿入され、レーザ光をエッチング加工
したい半導体基板1表面に照射するための光ファイバ、
13は前記加工プローブ7内部に挿入され、半導体基板
1で発光する光を受光する光ファイバ、14は前記光フ
ァイバ12の一端に接続され、光ファイバ12内にレー
ザ光を導入するためのレーザ光源、15は前記光ファイ
バ13の一端に接続され、光ファイバ13で受光した光
を分光するための分光器、16は前記移動ステージ8の
駆動部9,溶液類供給装置5,溶液類排出装置6,レー
ザ光源14,および分光器15と電気的に接続され、各
装置をコントロールする制御信号を出すとともに、分光
器15で測定した測定データを分析し、その結果をディ
スプレイおよびプリンタ等で出力する機能を有するコン
トローラコンピュータである。図9は、図8中の加工プ
ローブ7の構造断面図である。図10は半導体基板1を
精密に動かすことにより、加工プローブ7が描画加工し
ながら評価している様子を示した概略斜視図である。ま
た、図8の半導体評価装置の動作フローチャートを図1
1に示す。なお、この図における(1)〜(26)は各
ステップを示す。この動作は図3と同様の動作を行う
が、エッチング後の純水洗浄工程中に評価フロー(1
6)〜(19)が入っていることが特徴となっている。
すなわち、純水洗浄工程中に(15)、レーザ光源14
から光ファイバ12を介して半導体基板1上にレーザ光
を照射し(16)、半導体基板1表面からの光を光ファ
イバ13で受光し(17)、これらのデータをコントロ
ーラコンピュータ16に入力して処理を行い(18)、
その結果をディスプレイまたはプリンタにより出力する
(19)。
Next, an embodiment of the semiconductor evaluation apparatus provided in the semiconductor processing apparatus of the above embodiment will be described. FIG. 8 is a diagram showing the configuration of an embodiment of the semiconductor evaluation device of the present invention.
The same reference numerals as those in FIG. 1 indicate the same components, and 12 is an optical fiber which is inserted into the processing probe 7 and irradiates the surface of the semiconductor substrate 1 to be etched with laser light.
Reference numeral 13 denotes an optical fiber which is inserted into the processing probe 7 to receive light emitted from the semiconductor substrate 1, and 14 is connected to one end of the optical fiber 12 and is a laser light source for introducing laser light into the optical fiber 12. Reference numeral 15 denotes a spectroscope connected to one end of the optical fiber 13 for dispersing the light received by the optical fiber 13, and 16 a driving unit 9 of the moving stage 8, a solution supplying device 5, a solution discharging device 6 , A laser light source 14 and a spectroscope 15 are electrically connected to each other to output a control signal for controlling each device, analyze the measurement data measured by the spectroscope 15, and output the result on a display or a printer. Is a controller computer having. FIG. 9 is a structural cross-sectional view of the processing probe 7 in FIG. FIG. 10 is a schematic perspective view showing how the processing probe 7 evaluates while drawing and processing by precisely moving the semiconductor substrate 1. In addition, an operation flowchart of the semiconductor evaluation device of FIG. 8 is shown in FIG.
Shown in 1. In addition, (1) to (26) in this figure indicate each step. This operation is similar to that of FIG. 3, but the evaluation flow (1
It is characterized by containing 6) to (19).
That is, during the pure water cleaning step (15), the laser light source 14
Laser light is irradiated onto the semiconductor substrate 1 from the optical fiber 12 through the optical fiber 12 (16), the light from the surface of the semiconductor substrate 1 is received by the optical fiber 13 (17), and these data are input to the controller computer 16. Processing (18),
The result is output by a display or a printer (19).

【0014】[0014]

【発明の効果】以上説明したように、本発明にかかる半
導体加工装置によれば、半導体基板表面の加工したい部
分にのみエッチング液を供給できるので、従来の写真製
版を用いた加工と比較し工程数が少ない安価に、かつス
ピーディに加工することができる半導体加工装置が得ら
れる効果がある。
As described above, according to the semiconductor processing apparatus of the present invention, the etching liquid can be supplied only to the portion of the surface of the semiconductor substrate to be processed. There is an effect that a small number of semiconductor processing devices that can be processed inexpensively and speedily are obtained.

【0015】また、本発明にかかる半導体評価装置によ
れば、半導体基板表面からの深さ方向の品質評価を簡
単、かつスピーディに行うことができる半導体評価装置
が得られる効果がある。
Further, according to the semiconductor evaluation apparatus of the present invention, it is possible to obtain a semiconductor evaluation apparatus capable of easily and speedily performing quality evaluation in the depth direction from the surface of the semiconductor substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す半導体加工装置の構成
図である。
FIG. 1 is a configuration diagram of a semiconductor processing apparatus showing an embodiment of the present invention.

【図2】図1中の加工プローブの外観斜視図である。FIG. 2 is an external perspective view of the processing probe shown in FIG.

【図3】図1の動作を説明するフローチャートである。FIG. 3 is a flowchart illustrating the operation of FIG.

【図4】図1中の加工プローブの先端にシール材を設け
た実施例の要部を断面とした構成図である。
FIG. 4 is a configuration diagram showing a cross section of a main part of an embodiment in which a sealing material is provided at the tip of the processing probe in FIG.

【図5】図4の加工プローブの外観斜視図である。5 is an external perspective view of the processing probe of FIG. 4. FIG.

【図6】本発明の半導体加工装置の他の実施例を示す加
工プローブ部分の断面図である。
FIG. 6 is a sectional view of a processing probe portion showing another embodiment of the semiconductor processing apparatus of the present invention.

【図7】図6の外観斜視図である。FIG. 7 is an external perspective view of FIG.

【図8】本発明の半導体加工装置を応用した半導体評価
装置の一実施例を示す概略構成図である。
FIG. 8 is a schematic configuration diagram showing an embodiment of a semiconductor evaluation device to which the semiconductor processing device of the present invention is applied.

【図9】図8の加工プローブ部分の断面図である。9 is a cross-sectional view of the processing probe portion of FIG.

【図10】半導体基板の評価状態を示す要部の斜視図で
ある。
FIG. 10 is a perspective view of a main part showing an evaluation state of a semiconductor substrate.

【図11】本発明の半導体評価装置の動作を説明するフ
ローチャートである。
FIG. 11 is a flowchart illustrating an operation of the semiconductor evaluation device of the present invention.

【図12】従来の半導体基板表面の加工状態を示す斜視
図である。
FIG. 12 is a perspective view showing a processed state of a conventional semiconductor substrate surface.

【図13】図12の断面図である。13 is a cross-sectional view of FIG.

【図14】従来の半導体基板への加工プロセスを示す断
面図である。
FIG. 14 is a cross-sectional view showing a conventional process for processing a semiconductor substrate.

【符号の説明】[Explanation of symbols]

1 半導体基板 2 溶液封入器 3 溶液注入管 4 溶液排出管 5 溶液類供給装置 6 溶液類排出装置 7 加工プローブ 8 移動ステージ 9 駆動部 10 コントローラ 11 シール材 12 光ファイバ 13 光ファイバ 14 レーザ光源 15 分光器 16 コントローラコンピュータ 1 Semiconductor Substrate 2 Solution Encapsulator 3 Solution Injection Pipe 4 Solution Discharge Pipe 5 Solution Discharge Device 6 Solution Discharge Device 7 Processing Probe 8 Moving Stage 9 Drive Unit 10 Controller 11 Sealing Material 12 Optical Fiber 13 Optical Fiber 14 Laser Light Source 15 Spectroscopy 16 controller computer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板を自在に移動できる移動ステ
ージと;前記半導体基板表面の加工部分のみにエッチン
グ液,洗浄用の純水,および乾燥用の不活性ガス等の溶
液類を収容する溶液封入器と;この溶液封入器に前記エ
ッチング液,洗浄用の純水,および乾燥用の不活性ガス
を注入する溶液注入管と;前記溶液封入器内に注入され
た溶液類を一定の量にするための溶液排出管とからなる
加工プローブと;前記溶液注入管を介して前記溶液類を
供給する溶液類供給装置と;前記溶液排出管を介して前
記溶液類を排出する溶液類排出装置と;これらの一連の
動作をコントロールするコントローラと;からなること
を特徴とする半導体加工装置。
1. A movable stage capable of freely moving a semiconductor substrate; a solution encapsulation containing a solution such as an etching solution, pure water for cleaning, and an inert gas for drying only in a processed portion of the surface of the semiconductor substrate. A container; a solution injection pipe for injecting the etching solution, pure water for cleaning, and an inert gas for drying into the solution enclosure; and a constant amount of the solutions injected into the solution enclosure. A processing probe including a solution discharge pipe for supplying the solution; a solution supply device that supplies the solution through the solution injection pipe; a solution discharge device that discharges the solution through the solution discharge pipe; A semiconductor processing apparatus comprising: a controller that controls a series of these operations.
【請求項2】 半導体基板を自在に移動できる移動ステ
ージと;前記半導体基板表面の加工部分のみにエッチン
グ液,洗浄用の純水,および乾燥用の不活性ガス等の溶
液類を収容する溶液封入器と;この溶液封入器に前記エ
ッチング液,洗浄用の純水,および乾燥用の不活性ガス
を注入する溶液注入管と;前記溶液封入器内に注入され
た溶液類を一定の量にするための溶液排出管とからなる
加工プローブと;前記溶液注入管を介して前記溶液類を
供給する溶液類供給装置と;前記溶液排出管を介して前
記溶液類を排出する溶液類排出装置と;これらの一連の
動作をコントロールするコントローラと;前記加工プロ
ーブ内において前記純水による洗浄工程中に前記半導体
基板上にレーザ光を照射する光ファイバと;前記半導体
基板からの光を受光する光ファイバと;前記レーザ光を
出射するレーザ光源と;前記光ファイバで受光した光を
分光する分光器と;この分光器で測定した測定データを
分析し、その結果を表示する表示手段を備えたコントロ
ーラコンピュータと;からなることを特徴とする半導体
評価装置。
2. A moving stage capable of freely moving a semiconductor substrate; a solution encapsulation containing a solution such as an etching solution, pure water for cleaning, and an inert gas for drying only in a processed portion of the surface of the semiconductor substrate. A container; a solution injection pipe for injecting the etching solution, pure water for cleaning, and an inert gas for drying into the solution enclosure; and a constant amount of the solutions injected into the solution enclosure. A processing probe including a solution discharge pipe for supplying the solution; a solution supply device that supplies the solution through the solution injection pipe; a solution discharge device that discharges the solution through the solution discharge pipe; A controller for controlling these series of operations; an optical fiber for irradiating the semiconductor substrate with a laser beam during the cleaning process with the pure water in the processing probe; receiving light from the semiconductor substrate An optical fiber, a laser light source that emits the laser light, a spectroscope that disperses the light received by the optical fiber, and a display unit that analyzes the measurement data measured by the spectroscope and displays the result. 2. A semiconductor evaluation device comprising: a controller computer;
JP1912092A 1992-02-04 1992-02-04 Semiconductor processing equipment and semiconductor evaluation equipment Expired - Fee Related JP2924406B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1912092A JP2924406B2 (en) 1992-02-04 1992-02-04 Semiconductor processing equipment and semiconductor evaluation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1912092A JP2924406B2 (en) 1992-02-04 1992-02-04 Semiconductor processing equipment and semiconductor evaluation equipment

Publications (2)

Publication Number Publication Date
JPH05217984A true JPH05217984A (en) 1993-08-27
JP2924406B2 JP2924406B2 (en) 1999-07-26

Family

ID=11990612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1912092A Expired - Fee Related JP2924406B2 (en) 1992-02-04 1992-02-04 Semiconductor processing equipment and semiconductor evaluation equipment

Country Status (1)

Country Link
JP (1) JP2924406B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092784A (en) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp Wafer treatment equipment and wafer treatment method
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
JP2000183013A (en) * 1998-12-14 2000-06-30 Oki Electric Ind Co Ltd Nozzle structure of cleaning device
JP2002208563A (en) * 2001-01-09 2002-07-26 Ebara Corp Equipment and method for processing workpiece
CN103227234A (en) * 2012-01-31 2013-07-31 张陆成 Maskless local etching device, maskless local eteching method and maskless local eteching system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092784A (en) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp Wafer treatment equipment and wafer treatment method
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
JP2000183013A (en) * 1998-12-14 2000-06-30 Oki Electric Ind Co Ltd Nozzle structure of cleaning device
JP2002208563A (en) * 2001-01-09 2002-07-26 Ebara Corp Equipment and method for processing workpiece
CN103227234A (en) * 2012-01-31 2013-07-31 张陆成 Maskless local etching device, maskless local eteching method and maskless local eteching system
CN103227234B (en) * 2012-01-31 2016-06-22 张陆成 The Etaching device of local without mask, method and system

Also Published As

Publication number Publication date
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