JP2000183013A - Nozzle structure of cleaning device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent compounded chemicals from changing in characteristics by a method wherein a nozzle main body is provided above a chuck that sucks a wafer, and chemicals or water is supplied to the nozzles of the nozzle main body through pipings. SOLUTION: A nozzle main body 3 is provided above a chuck 2 which sucks a wafer 1. The nozzle main body 3 is composed of a nozzle 5 for chemicals A4, a nozzle 7 for chemicals B6, and a nozzle 9 for pure water 8. A wafer 1 is chucked by the chuck 2. The wafer 1 is rotated at a constant number of revolutions, and chemicals A4 is discharged out through the nozzle 5 of the nozzle main body 3, and chemicals B6 is discharged out through the nozzle 7 at the same time. After a certain time elapses, the chemicals are stopped from being discharged out, and pure water 8 is discharged out from the nozzle 9 of the nozzle main body 3 to rinse the wafer 1. After a certain time elapses, pure wafer 8 is stopped from being discharged out, the wafer 1 is rotated at a high speed to be dried out, and a cleaning operation is finished. By this setup, chemicals are not compounded with a distant compounding machine, so that chemicals are prevented from changing in characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nozzle structure of a cleaning apparatus for removing and cleaning an organic film, dirt and dust remaining on a wafer in a semiconductor manufacturing process.

[0002]

2. Description of the Related Art FIG. 5 is a view showing a nozzle structure of a conventional semiconductor wafer cleaning apparatus.

A chemical solution (A) 21 and a chemical solution (B) 22 are prepared by a compounding machine 23 and the temperature is adjusted to an appropriate temperature by a temperature controller 24. Apply chemical solution to

[0004] At this time, the wafer 28 is rotated at a constant rotation speed, a chemical solution is applied from the nozzle 26 for a fixed time, and then pure water 29 is discharged from the nozzle 31 via a pipe 30 and rinsed for a fixed time. Thereafter, the wafer 28 is rotated at a high speed and dried, and the cleaning is completed.

[0005]

However, in the above-described structure, there is a distance to a wafer of a cleaning object after compounding or temperature control.
There are problems that it takes time, the temperature is unstable, and the characteristics of the prepared chemical solution change. In addition, when various types of chemicals are used, there is a problem that the number of nozzles increases and the installation space increases.

[0006]

According to the present invention, a chuck for sucking a wafer is disposed, and a nozzle body is provided thereon. The nozzle body is the nozzle port of the chemical (A) and the chemical (B)
Nozzle port and pure water nozzle port. Each nozzle port is connected to a chemical solution (A), a chemical solution (B), and pure water via a pipe, and performs a wafer cleaning process.

[0007]

FIG. 1 is a view showing a first embodiment of the present invention. FIG. 1 (a) is an external view of a nozzle, and FIG. 1 (b) is a sectional view of the nozzle.

In FIG. 1, a chuck 2 for adsorbing a wafer 1 is provided, and a nozzle body 3 is provided thereon.
The nozzle body 3 has a nozzle port 5 for a chemical (A) 4 and a chemical (B).
6 and a nozzle port 9 for pure water 8. Each nozzle port is configured to be connected to a container containing a chemical solution (A) 4, a chemical solution (B) 6, and pure water 8 via a pipe (not shown).

The operation of the first embodiment will be described below.

The wafer 1 is attracted to the chuck 2. The wafer 1 is rotated at a certain rotation speed, and the chemical (A) 4 is discharged from the nozzle port 5 of the nozzle body 3 while simultaneously discharging the chemical (B) 6 from the nozzle port 7. After a certain time, the discharge of each chemical solution is stopped, and pure water 8 is supplied to the nozzle port 9 of the nozzle body 3.
And rinsed.

After a certain period of time, the discharge of the pure water 8 is stopped, the wafer 1 is rotated at a high speed to dry the wafer 1, and the cleaning is completed.

As described above, the chemical liquid is taken out of the point of use without being mixed by a separate dispenser (the ultrapure water introduced from the subsystem via the point of use piping is used for the purpose of cleaning or the like in the wafer processing step). Refers to the location.)
The properties of the drug solution do not change because it is prepared near. Also, the concentration can be changed by changing the amount of each chemical solution.

Further, by increasing the number of nozzle openings, a plurality of chemicals can be used in one nozzle body.
Many types of chemicals can be used. Therefore, a compounding machine is unnecessary. Further, only one nozzle is required, and the space can be effectively utilized.

FIGS. 2A and 2B show a second embodiment of the present invention. FIG. 2A is an external view of a nozzle, and FIG. 2B is a sectional view of the nozzle.

The second embodiment is different from the first embodiment in that a discharge hole 10 is provided in the nozzle port 5 as shown in FIG. Is discharged from the discharge hole 10.

As a result, the dispensing becomes quicker near the point of use, that is, the chemical solution is easily mixed, and the cleaning ability is improved.

The other basic configuration and operation are the same as in the first embodiment.

FIGS. 3A and 3B are views showing a third embodiment of the present invention. FIG. 3A is an external view of a nozzle, and FIG. 3B is a sectional view of the nozzle.

In the third embodiment, the nozzle body 3 is divided into a nozzle port 5 for the chemical solution (A) 4, a nozzle port 7 for the chemical solution (B) 6, a nozzle port 9 for pure water 8, and a nozzle port 12 for the vacuum 11. . Each nozzle opening is chemical solution (A) 4, chemical solution (B)
6, connected to a container containing pure water 8 and a suction part of the vacuum 11 via a pipe.

The operation of the third embodiment will be described below.

The wafer 1 is attracted to the chuck 2. The wafer 1 is rotated at a certain rotation speed, and the chemical (A) 4 is discharged from the nozzle port 5 of the nozzle body 3 while simultaneously discharging the chemical (B) 6 from the nozzle port 7. At the same time, the drug solution prepared by the vacuum 11 is sucked from the nozzle port 12.

At this time, the prepared chemical solution is discharged from the nozzle opening and hits the wafer 1, but the chemical solution is sucked because it is pulled by the vacuum 11 from the center of the nozzle. At the same time, the chemical liquid has a tornado shape because the wafer 1 is rotating. After a certain time, the discharge of each chemical solution and the vacuum 11 are stopped, and pure water 8 is discharged from the nozzle port 9 of the nozzle body 3 to perform rinsing.

After a predetermined time, the discharge of the pure water 8 is stopped, the wafer 1 is rotated at a high speed to dry the wafer 1, and the cleaning is completed.

Providing a vacuum nozzle as described above is useful for removing particles (fine particles).

FIGS. 4A and 4B show a fourth embodiment of the present invention, wherein FIG. 4A is an external view of a nozzle, and FIG. 4B is a sectional view of the nozzle.

In the fourth embodiment, the nozzle body 3 is divided into a nozzle port 5 for the chemical (A) 4, a nozzle port 7 for the chemical (B) 6, and a nozzle port 9 for the pure water 8. Each nozzle port is connected to a container containing the chemical solution (A) 4, the chemical solution (B) 6, and pure water 8 via a pipe, and a heater 13 is provided at each nozzle port.

The operation of the fourth embodiment will be described below.

The wafer 1 is attracted to the chuck 2. The wafer 1 is rotated at a certain rotation speed, and the chemical (A) 4 is discharged from the nozzle port 5 of the nozzle body 3 while simultaneously discharging the chemical (B) 6 from the nozzle port 7. At the same time, the temperature of the chemical solution is kept constant by the heater 13. After a certain time, the discharge of each chemical solution is stopped, and pure water 8 is discharged from the nozzle port 9 of the nozzle body 3 to perform rinsing.

At this time, depending on the type of the chemical, the heater 1
In some cases, the temperature of the pure water 8 may be increased by 3 to discharge hot water. After a certain period of time, the discharge of the pure water 8 is stopped, the wafer 1 is rotated at a high speed, and the wafer 1 is dried.

As described above, by providing a heater at each nozzle port, a temperature controller for controlling the temperature of the chemical solution becomes unnecessary, and various temperatures can be set by combining the temperatures of the respective heaters.

The temperature is stable because it is near the use point. In addition, heat-resistant piping for utilities (such as externally required power supply and cooling water required for system operation) is not required, and cost reduction can be expected.

[0032]

As described above in detail, according to the present invention, the chemical solution is prepared near the point of use without being prepared by a separate blender, so that the characteristics of the chemical solution do not change. Also, the concentration can be changed by changing the amount of each chemical solution.

Further, by increasing the number of nozzle openings, a plurality of chemicals can be used in one nozzle body.
Many types of chemicals can be used. Therefore, a compounding machine is unnecessary. Further, only one nozzle is required, and the space can be effectively utilized.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram showing a second embodiment of the present invention.

FIG. 3 is a diagram showing a third embodiment of the present invention.

FIG. 4 is a diagram showing a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a nozzle structure of a conventional cleaning apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Chuck 3 Nozzle body 4 Chemical solution (A) 5, 7, 9, 12 Nozzle port 6 Chemical solution (B) 8 Pure water 10 Discharge hole 11 Vacuum 13 Heater

Claims (4)

[Claims] 1. A chuck for adsorbing a wafer is disposed,
A nozzle structure of a cleaning device, wherein a nozzle body provided at an upper portion thereof includes a plurality of nozzle ports in one nozzle, and a chemical solution is prepared in the nozzle. 2. A nozzle structure for a cleaning apparatus according to claim 1, wherein a plurality of discharge holes are provided in one of said nozzle openings. 3. The nozzle structure of a cleaning apparatus according to claim 1, wherein a nozzle port for drawing a vacuum is provided at the center of the nozzle. 4. The nozzle structure according to claim 1, wherein a heater is provided between the plurality of nozzle openings.