JP2002043272A - Substrate cleaning apparatus and substrate processing apparatus - Google Patents

Substrate cleaning apparatus and substrate processing apparatus

Info

Publication number
JP2002043272A
JP2002043272A JP2000229104A JP2000229104A JP2002043272A JP 2002043272 A JP2002043272 A JP 2002043272A JP 2000229104 A JP2000229104 A JP 2000229104A JP 2000229104 A JP2000229104 A JP 2000229104A JP 2002043272 A JP2002043272 A JP 2002043272A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
tank
cleaning tank
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000229104A
Other languages
Japanese (ja)
Other versions
JP2002043272A5 (en
Inventor
Hiroshi Sotozaki
宏 外崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2000229104A priority Critical patent/JP2002043272A/en
Priority to US09/915,289 priority patent/US6616512B2/en
Publication of JP2002043272A publication Critical patent/JP2002043272A/en
Publication of JP2002043272A5 publication Critical patent/JP2002043272A5/ja
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a safe substrate cleaning apparatus which can supply sufficiently the clean air owing to down-flow even when cleaning by chemicals and spin-drying are conducted within a tank, prevent diffusion of atmosphere of chemicals and re-deposition of mist during the drying process in an adequate closed construction, and also maintain the closed construction for a certain period even if an exhaust system is failed and thereby prevent diffusion of the chemicals. SOLUTION: The substrate cleaning apparatus is provided with a suction port 12 at an upper part of a cleaning tank 11, and a exhaust port 17 at the bottom portion to form down-flow within the cleaning tank 11. The apparatus rotates a substrate Wf to be cleaned within the cleaning tank 11 to realize cleaning and drying processes of the substrate to be cleaned within the same cleaning tank 11. Moreover, a door 14 is also provided to close and open the suction port 12. When the pressure in the cleaning tank 11 is defined as PIN, while an outside pressure of the cleaning tank is defined as POUT, the suction port 12 is opened for the condition of PIN<POUT and the suction port 12 is closed for the condition of PIN>=POUT.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体ウエハ等の基
板を薬液による洗浄とスピン乾燥とを同一の洗浄槽内で
行うことができる基板洗浄装置及び該基板洗浄装置を用
いた基板処理装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning apparatus capable of cleaning a substrate such as a semiconductor wafer with a chemical solution and spin drying in the same cleaning tank, and a substrate processing apparatus using the substrate cleaning apparatus. It is.

【0002】[0002]

【従来の技術】半導体ウエハ等の基板を回転させながら
洗浄する枚葉式洗浄装置において、洗浄液に薬液を用い
て洗浄する場合、薬液雰囲気の拡散に対する配慮から洗
浄槽内を排気すると共に、槽内を微少の負圧とするため
に該洗浄槽をクローズド(密閉構造)にする必要があっ
た。このようなクローズド構造の洗浄槽内で基板を高速
回転させ遠心力により洗浄液の液滴を除去して乾燥させ
る所謂スピン乾燥を行うと、クローズド構造のため、ダ
ウンフローにより洗浄槽の頂部から清浄な空気を充分に
導入することができず、薬液雰囲気中での基板の乾燥と
なり、ミストの再付着などにより、基板を清浄すること
が困難であった。
2. Description of the Related Art In a single-wafer cleaning apparatus for cleaning a substrate such as a semiconductor wafer while rotating the substrate, when cleaning is performed using a chemical as a cleaning liquid, the cleaning tank is evacuated in consideration of diffusion of a chemical liquid atmosphere, and the inside of the tank is exhausted. It was necessary to make the washing tank closed (closed structure) in order to make a small negative pressure. When so-called spin drying is performed in which the substrate is rotated at high speed in such a cleaning tank having a closed structure to remove the liquid droplets of the cleaning liquid by centrifugal force and dried, a clean flow is obtained from the top of the cleaning tank by a down flow due to the closed structure. Air could not be sufficiently introduced, the substrate was dried in a chemical solution atmosphere, and it was difficult to clean the substrate due to mist reattachment.

【0003】従って、上記ミストの再付着などをなくす
るためには、薬液洗浄を行う洗浄槽と、スピン乾燥を行
う乾燥槽とを分けて構成する必要があった。しかしなが
ら、洗浄槽と乾燥槽を分けて構成することは、その分大
型となり、設置スペースを広く必要とする上、コスト高
になる。
Therefore, in order to eliminate the re-adhesion of the mist and the like, it is necessary to separately provide a cleaning tank for performing chemical cleaning and a drying tank for performing spin drying. However, when the washing tank and the drying tank are separately provided, the size becomes large, the installation space is required widely, and the cost increases.

【0004】[0004]

【発明が解決しようとする課題】本発明は上述の点に鑑
みてなされたもので、一つの槽内で薬液洗浄及びスピン
乾燥を行っても、ダウンフローにより充分に清浄空気供
給、適度なクローズド構造で薬液雰囲気の拡散防止及び
乾燥時のミストの再付着の防止が可能で、且つ排気系が
故障した場合でもある時間は密閉構造が維持し、薬液雰
囲気の拡散を防止できる安全な基板洗浄装置及び該基板
洗浄装置を用いた基板処理装置を提供することを目的と
する。
DISCLOSURE OF THE INVENTION The present invention has been made in view of the above points. Even when a chemical solution is washed and spin-dried in a single tank, a sufficient amount of clean air can be supplied by a down flow, and a moderate closed Safe substrate cleaning device that can prevent diffusion of chemical solution atmosphere and prevent mist re-adhesion during drying, and maintain a closed structure even when the exhaust system fails, preventing diffusion of chemical solution atmosphere. And a substrate processing apparatus using the substrate cleaning apparatus.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
請求項1に記載の発明は、洗浄槽を具備し、該洗浄槽の
上部に吸気口を設け、底部に排気口を設け該洗浄槽内に
ダウンフローを形成すると共に、該洗浄槽内で被洗浄基
板を回転し、同一洗浄槽内で該被洗浄基板の洗浄及び乾
燥処理ができるようにした基板洗浄装置であって、吸気
口を閉塞及び開放する開閉手段を設け、洗浄槽内の圧力
をPIN、洗浄槽外の圧力をPOUTとし、PIN<POUTの場
合開閉手段で吸気口を開放すると共に、PIN≧POUT
場合吸気口を閉塞することを特徴とする。
According to a first aspect of the present invention, there is provided a cleaning tank provided with a cleaning tank, an intake port provided at an upper portion of the cleaning tank, and an exhaust port provided at a bottom portion. A substrate cleaning apparatus that forms a down flow inside, rotates a substrate to be cleaned in the cleaning tank, and enables cleaning and drying of the substrate to be cleaned in the same cleaning tank. An opening / closing means for closing and opening is provided, and the pressure in the cleaning tank is set to P IN , and the pressure outside the cleaning tank is set to P OUT . When P IN <P OUT , the opening and closing means opens the intake port, and P IN ≧ P OUT In this case, the intake port is closed.

【0006】上記のように、PIN<POUTの場合開閉手
段で吸気口を開放すると共に、PIN≧POUTの場合吸気
口を閉塞するので、洗浄槽内の圧力が洗浄槽外の圧力よ
り小さい場合は、洗浄槽内に清浄な空気によるダウンフ
ローが形成され、洗浄液(薬液等)の雰囲気の拡散を防
ぎつつ被洗浄基板の洗浄乾燥を行うことができる。ま
た、排気系の故障等により洗浄槽内の圧力が洗浄槽外の
圧力以上となった場合(PIN≧POUT)、洗浄槽頂部の
吸気口を開閉手段で閉塞するから、洗浄液(薬液等)の
雰囲気が洗浄槽外に拡散することを防止できる。
As described above, when P IN <P OUT , the opening / closing means opens the intake port, and when P IN ≧ P OUT , the intake port is closed. If the diameter is smaller than the above, a downflow due to clean air is formed in the cleaning tank, and the substrate to be cleaned can be cleaned and dried while preventing the diffusion of the atmosphere of the cleaning liquid (chemical solution or the like). If the pressure inside the cleaning tank becomes higher than the pressure outside the cleaning tank due to a failure of the exhaust system (P IN ≧ P OUT ), the suction port at the top of the cleaning tank is closed by the opening / closing means. It is possible to prevent the atmosphere of (3) from diffusing out of the cleaning tank.

【0007】また、請求項2に記載の発明は、請求項1
に記載の基板洗浄装置において、開閉手段はPIN≧P
OUTの時、重力及び洗浄槽内外の圧力差を利用して吸気
口を閉塞し、PIN<POUTの時、前記洗浄槽内外の圧力
差により前記吸気口を開く扉であることを特徴とする。
[0007] The invention described in claim 2 is the first invention.
Wherein the opening and closing means is P IN ≧ P
At the time of OUT , the suction port is closed using gravity and the pressure difference between the inside and outside of the washing tank, and when P IN <P OUT , the door is opened by the pressure difference between inside and outside of the washing tank. I do.

【0008】また、請求項3に記載の発明は、請求項1
に記載の基板洗浄装置において、開閉手段は吸気口を開
閉する扉と、洗浄槽内の圧力PINを検出する槽内圧セン
サと洗浄槽外の圧力POUTを検出する槽外圧センサとを
具備し、PIN<POUTの場合吸気口を開放すると共にP
IN≧POUTの場合吸気口を閉塞するように扉を駆動制御
する扉駆動制御手段を具備することを特徴とする。
[0008] The invention described in claim 3 is the first invention.
Wherein the opening and closing means includes a door that opens and closes an intake port, a tank pressure sensor that detects a pressure P IN in the cleaning tank, and a tank pressure sensor that detects a pressure P OUT outside the cleaning tank. , P IN <P OUT open the intake port and
When INPOUT , door drive control means for controlling the drive of the door so as to close the intake port is provided.

【0009】また、請求項4に記載の発明は、被処理基
板を搬入搬出するロード・アンロード部、被処理基板を
処理する基板処理部、被処理基板を洗浄し乾燥させる基
板洗浄部及び各部に基板を搬送する基板搬送機構を具備
し、基板搬送機構により、ロード・アンロード部から未
処理の被処理基板を取出し基板処理部に搬送し、該基板
処理部で処理された被処理基板を基板洗浄部に搬送し、
該基板洗浄部で洗浄し乾燥させた被処理基板をロード・
アンロード部に搬送し収容する基板処理装置において、
基板洗浄部には少なくとも1台の洗浄装置が設置されて
おり、該洗浄装置の少なくとも1台に請求項1乃至3の
いずれか一つの基板洗浄装置を用いることを特徴とす
る。
According to a fourth aspect of the present invention, there is provided a load / unload section for loading / unloading a substrate to be processed, a substrate processing section for processing a substrate to be processed, a substrate cleaning section for cleaning and drying the substrate to be processed, and various parts. A substrate transport mechanism for transporting the substrate to the substrate processing mechanism. The substrate transport mechanism takes out an unprocessed substrate from the loading / unloading unit, transports the substrate to the substrate processing unit, and processes the substrate processed by the substrate processing unit. Transported to the substrate cleaning section,
The substrate to be processed, which has been cleaned and dried in the substrate cleaning section, is loaded and
In the substrate processing apparatus that is transported and stored in the unloading section,
The substrate cleaning unit is provided with at least one cleaning device, and at least one of the cleaning devices uses the substrate cleaning device according to any one of claims 1 to 3.

【0010】上記基板洗浄部に請求項1乃至3のいずれ
か一つの基板洗浄装置を用いるので、基板洗浄装置の排
気系の故障等により洗浄槽内の圧力が洗浄槽外の圧力以
上となった場合、洗浄槽頂部の吸気口を開閉手段で閉塞
するから、洗浄液(薬液等)の雰囲気が洗浄槽外に拡散
することのない基板処理装置となる。特に、最終段の洗
浄乾燥に請求項1乃至3のいずれか一つの基板洗浄装置
を用いることにより、薬液ミストの再付着による汚染等
を防止することができる。
[0010] Since the substrate cleaning section uses the substrate cleaning apparatus according to any one of claims 1 to 3, the pressure in the cleaning tank becomes higher than the pressure outside the cleaning tank due to a failure of the exhaust system of the substrate cleaning apparatus. In this case, since the intake port at the top of the cleaning tank is closed by the opening / closing means, the substrate processing apparatus does not diffuse the atmosphere of the cleaning liquid (chemical solution or the like) outside the cleaning tank. In particular, by using the substrate cleaning apparatus according to any one of claims 1 to 3 for cleaning and drying in the final stage, contamination or the like due to re-adhesion of the chemical mist can be prevented.

【0011】[0011]

【発明の実施の形態】以下、本発明の実施の形態例を図
面に基づいて説明する。図1は本発明に係る基板洗浄装
置の概略構成を示す断面図である。図において、11は
基板洗浄装置10の洗浄槽であり、該洗浄槽11の頂部
に清浄な空気を導入するための吸気口12が設けられて
いる。該吸気口12の上部は空気導入室13で覆われ、
該空気導入室13の側壁に開口16が設けられ、該開口
16には開閉するための開閉扉14がヒンジ機構15で
回動自在に設けられている。該開閉扉14の先端部には
錘14aが設けられている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a schematic configuration of a substrate cleaning apparatus according to the present invention. In the figure, reference numeral 11 denotes a cleaning tank of the substrate cleaning apparatus 10, and an inlet 12 for introducing clean air is provided at the top of the cleaning tank 11. The upper part of the air inlet 12 is covered with an air introduction chamber 13,
An opening 16 is provided in a side wall of the air introduction chamber 13, and an opening / closing door 14 for opening and closing is provided in the opening 16 so as to be rotatable by a hinge mechanism 15. A weight 14 a is provided at the tip of the door 14.

【0012】洗浄槽11の底部には排気口17、17が
設けられ、該排気口17、17は図示しない排気系に接
続されている。洗浄槽11の内部には、半導体ウエハ等
の被洗浄基板Wfを保持して回転する基板保持回転機構
18が配置されている。基板保持回転機構18は被洗浄
基板Wfの外周部を挟持するための複数本(図では4
本)の挟持部材19を具備し、該複数本の挟持部材19
は基台20に取付けられ、該基台20は回転軸21に支
持され、洗浄槽11外に配置された回転駆動機構(図示
せず)で矢印A方向に回転できるようになっている。な
お、回転軸21が洗浄槽11の底部を貫通する部分には
シール機構22が設けられている。なお、25はドレン
孔である。
Exhaust ports 17, 17 are provided at the bottom of the cleaning tank 11, and the exhaust ports 17, 17 are connected to an exhaust system (not shown). A substrate holding / rotating mechanism 18 that holds and rotates a substrate to be cleaned Wf such as a semiconductor wafer is disposed inside the cleaning tank 11. A plurality of substrate holding / rotating mechanisms 18 (4 in FIG.
) Of the plurality of holding members 19.
Is mounted on a base 20, which is supported by a rotating shaft 21 and is rotatable in the direction of arrow A by a rotary drive mechanism (not shown) arranged outside the washing tank 11. Note that a seal mechanism 22 is provided at a portion where the rotating shaft 21 passes through the bottom of the cleaning tank 11. In addition, 25 is a drain hole.

【0013】基板保持回転機構18で保持され回転する
被洗浄基板Wfの上下面に洗浄液として薬液を噴射する
ための薬液ノズル23、23が被洗浄基板Wfの上下方
向に設けられている。また、被洗浄基板Wfの上下面に
洗浄液として超純水を噴射するための純水ノズル24、
24が上下方向に設けられている。なお、図示は省略す
るが、基板保持回転機構18には、複数本の挟持部材1
9を開閉するための開閉機構が設けられ、搬送ロボット
で搬入された被洗浄基板Wfを挟持し、洗浄乾燥された
被洗浄基板Wfを搬送ロボットで搬出できるようになっ
ている。
Chemical solution nozzles 23, 23 for spraying a chemical solution as a cleaning liquid on the upper and lower surfaces of the substrate Wf to be cleaned held by the substrate holding and rotating mechanism 18 are provided in the vertical direction of the substrate Wf to be cleaned. A pure water nozzle 24 for injecting ultrapure water as a cleaning liquid onto the upper and lower surfaces of the substrate Wf to be cleaned;
24 are provided in the up-down direction. Although not shown, the substrate holding and rotating mechanism 18 includes a plurality of holding members 1.
An opening / closing mechanism for opening and closing the cleaning substrate 9 is provided so that the substrate to be cleaned Wf carried in by the transport robot can be held therebetween, and the substrate to be cleaned Wf that has been washed and dried can be carried out by the transport robot.

【0014】上記構成の基板洗浄装置において、洗浄槽
11内の圧力をPIN、洗浄槽11外の圧力をPOUT
し、PIN=POUTの場合は開閉扉14はその錘14aに
より、図2に示すように、空気導入室13の側壁の開口
16を閉じている。この状態で排気口17、17を通し
て洗浄槽11内を排気し、PIN<POUTとなると、この
圧力差により開閉扉14が図1の矢印B方向に回動し
て、開口16を開放する。これにより開口16及び吸気
口12を通って清浄空気が洗浄槽11に導入され、槽内
でダウンフローを形成して排気口17、17から排出さ
れる。
[0014] In the substrate cleaning apparatus having the above structure, the pressure in the cleaning tank 11 P IN, the pressure outside the cleaning tank 11 and P OUT, the P IN = For P OUT door 14 that mass 14a, FIG. As shown in FIG. 2, the opening 16 on the side wall of the air introduction chamber 13 is closed. In this state, the inside of the cleaning tank 11 is exhausted through the exhaust ports 17, 17, and when P IN <P OUT , the pressure difference causes the opening / closing door 14 to rotate in the direction of arrow B in FIG. . As a result, clean air is introduced into the cleaning tank 11 through the opening 16 and the intake port 12, forms a downflow in the tank, and is discharged from the exhaust ports 17, 17.

【0015】このダウンフローの雰囲気中で、薬液ノズ
ル23、23から薬液として希フッ酸(DHF)液等を
基板保持回転機構18で保持され回転している被洗浄基
板Wfの上下面に噴射し、被洗浄基板Wfを薬液洗浄す
る。続いて純水ノズル24、24から被洗浄基板Wfの
上下面に超純水を噴射し、被洗浄基板Wfを純水洗浄す
る。続いて、基板保持回転機構18の高速回転により被
洗浄基板Wfを高速回転し、その遠心力により表面に付
着している液滴を除去して被洗浄基板Wfをスピン乾燥
させる。この薬液洗浄、純水洗浄及びスピン乾燥を通し
て洗浄槽11内は清浄な空気のダウンフローが形成され
ているから、薬液や純水のミストが外部に飛散すること
なく排気され、ミストの再付着などにより被洗浄基板W
fが汚染されることもない。
In this down-flow atmosphere, a diluted hydrofluoric acid (DHF) solution or the like is ejected from the solution nozzles 23, 23 as a solution onto the upper and lower surfaces of the substrate Wf to be cleaned which is held and rotated by the substrate holding and rotating mechanism 18. Then, the substrate Wf to be cleaned is cleaned with a chemical solution. Subsequently, ultrapure water is sprayed from the pure water nozzles 24 onto the upper and lower surfaces of the substrate Wf to be cleaned, and the substrate Wf to be cleaned is cleaned with pure water. Subsequently, the substrate to be cleaned Wf is rotated at a high speed by the high-speed rotation of the substrate holding / rotating mechanism 18, and the centrifugal force removes droplets adhering to the surface to spin dry the substrate to be cleaned Wf. Through this chemical cleaning, pure water cleaning and spin drying, a clean air downflow is formed in the cleaning tank 11, so that the chemical and pure water mist are exhausted without scattering to the outside, and the mist is re-attached. To be cleaned W
f is not contaminated.

【0016】排気系の故障等により、PIN≧POUTとな
った場合、図2に示すように開閉扉14は錘14aによ
り、空気導入室13の開口16を閉じるから、洗浄槽1
1内を密閉状態にするから、希フッ酸(DHF)液等の
洗浄雰囲気が洗浄槽11に拡散することなく、ある時間
は安全に保つことができる。
If P IN ≧ P OUT due to a failure of the exhaust system, the opening / closing door 14 closes the opening 16 of the air introduction chamber 13 by the weight 14a as shown in FIG.
Since the inside is sealed, the cleaning atmosphere such as a diluted hydrofluoric acid (DHF) solution does not diffuse into the cleaning tank 11 and can be kept safe for a certain time.

【0017】図3は本発明に係る基板洗浄装置の概略構
成を示す断面図である。図3において、図1と同一符号
を付した部分は同一又は相当部分を示す。本基板洗浄装
置は、洗浄槽11の頂部に設けた吸気口12を開閉する
回転扉26を設け、該回転扉26は駆動機構27により
回転駆動されるようになっている。回転駆動機構27は
制御部28により制御されるようになっている。制御部
28には洗浄槽11の内部圧力PINを検出する内圧セン
サ29の出力と洗浄槽11の外部圧力POUTを検出する
外圧センサ29’の出力が入力されるようになってい
る。
FIG. 3 is a sectional view showing a schematic configuration of a substrate cleaning apparatus according to the present invention. In FIG. 3, portions denoted by the same reference numerals as those in FIG. 1 indicate the same or corresponding portions. This substrate cleaning apparatus is provided with a rotating door 26 for opening and closing the air inlet 12 provided on the top of the cleaning tank 11, and the rotating door 26 is driven to rotate by a driving mechanism 27. The rotation drive mechanism 27 is controlled by a control unit 28. The output of the internal pressure sensor 29 for detecting the internal pressure P IN of the cleaning tank 11 and the output of the external pressure sensor 29 ′ for detecting the external pressure P OUT of the cleaning tank 11 are input to the control unit 28.

【0018】制御部28は内部圧力PINと外部圧力P
OUTを比較し、PIN<POUTの場合回転扉26を矢印C方
向に回転し、吸気口12を開放する。逆にPIN≧POUT
の場合は回転扉26を矢印Cとは反対方向に回転させ、
図4に示すように吸気口12を閉じる。
The control unit 28 controls the internal pressure P IN and the external pressure P
OUT is compared, and if P IN <P OUT , the revolving door 26 is rotated in the direction of arrow C to open the air inlet 12. Conversely, P IN ≧ P OUT
In the case of, the revolving door 26 is rotated in the direction opposite to the arrow C,
The intake port 12 is closed as shown in FIG.

【0019】上記構成の基板洗浄装置において、PIN
OUTの場合は上記のように回転扉26は、図4に示す
ように、吸気口12を閉じている。この状態で排気口1
7、17を通して洗浄槽11内を排気し、PIN<POUT
となると、制御部28は回転駆動機構27により回転扉
26を矢印C方向に回転させ、吸気口12を開放する。
これにより吸気口12を通って清浄空気が洗浄槽11に
導入され、槽内でダウンフローを形成して排気口17、
17から排出される。
In the substrate cleaning apparatus having the above structure, P IN =
In the case of P OUT , as described above, the revolving door 26 closes the intake port 12 as shown in FIG. In this state, the exhaust port 1
The inside of the washing tank 11 is evacuated through 7 and 17, and P IN <P OUT
Then, the control unit 28 rotates the revolving door 26 in the direction of arrow C by the rotation driving mechanism 27 to open the air inlet 12.
As a result, clean air is introduced into the cleaning tank 11 through the intake port 12 and forms a downflow in the tank to form the exhaust port 17.
It is discharged from 17.

【0020】このダウンフローの雰囲気中で、薬液ノズ
ル23、23から薬液として希フッ酸(DHF)液等を
基板保持回転機構18で保持され回転している被洗浄基
板Wfの上下面に噴射し、被洗浄基板Wfを薬液洗浄す
る。続いて純水ノズル24、24から被洗浄基板Wfの
上下面に超純水を噴射し、被洗浄基板Wfを純水洗浄す
る。続いて、基板保持回転機構18の高速回転により被
洗浄基板Wfを高速回転し、その遠心力により表面に付
着している液滴を除去して被洗浄基板Wfをスピン乾燥
させる。この薬液洗浄、純水洗浄及びスピン乾燥を通し
て洗浄槽11内は清浄な空気のダウンフローが形成され
ているから、薬液や純水のミストが外部に飛散すること
なく、ミストの再付着などにより被洗浄基板Wfが汚染
されることもない。
In this down-flow atmosphere, a diluted hydrofluoric acid (DHF) solution or the like is ejected from the solution nozzles 23, 23 as the solution onto the upper and lower surfaces of the substrate Wf to be cleaned, which is held and rotated by the substrate holding and rotating mechanism 18. Then, the substrate Wf to be cleaned is cleaned with a chemical solution. Subsequently, ultrapure water is sprayed from the pure water nozzles 24 onto the upper and lower surfaces of the substrate Wf to be cleaned, and the substrate Wf to be cleaned is cleaned with pure water. Subsequently, the substrate to be cleaned Wf is rotated at a high speed by the high-speed rotation of the substrate holding / rotating mechanism 18, and the centrifugal force removes droplets adhering to the surface to spin dry the substrate to be cleaned Wf. Through the chemical cleaning, the pure water cleaning and the spin drying, a clean air downflow is formed in the cleaning tank 11, so that the chemical or pure water mist does not scatter to the outside and the mist is re-adhered to the mist. The cleaning substrate Wf is not contaminated.

【0021】なお、上記例では、基板洗浄装置の洗浄機
構は、基板保持回転機構で回転保持する被洗浄基板Wf
の上下面に薬液ノズル23、23から薬液、純水ノズル
24、24から超純水を噴射して洗浄する洗浄機構を示
したが,これに限定されるものではなく、例えば図5に
示すように、揺動回転軸110に支持された揺動アーム
111を有し、該揺動アーム111の先端下方に回転軸
112を取付け、該回転軸112の先端にスポンジ材等
の多孔質材からなる洗浄部材113aを有するペンシル
型洗浄具113を取付けた構成のものでもよい。
In the above example, the cleaning mechanism of the substrate cleaning apparatus uses the substrate Wf to be cleaned which is rotated and held by the substrate holding and rotating mechanism.
A cleaning mechanism for jetting a chemical solution from the chemical solution nozzles 23 and 23 and ultrapure water from the pure water nozzles 24 and 24 for cleaning is shown on the upper and lower surfaces, but is not limited thereto. For example, as shown in FIG. Has a swing arm 111 supported by a swing rotation shaft 110, and a rotation shaft 112 is attached below the tip of the swing arm 111, and the tip of the rotation shaft 112 is made of a porous material such as a sponge material. A configuration in which a pencil-type cleaning tool 113 having a cleaning member 113a is attached may be used.

【0022】この洗浄機構では、洗浄具113の洗浄部
材113aを基板保持回転機構18で回転保持される被
洗浄基板Wfの上面に当接し、図5では省略している
が、図1に示すように、被洗浄基板Wfの上下面に薬液
ノズル23、23から薬液、純水ノズル24、24から
超純水を噴射しながら、薬液洗浄、純水洗浄を行う。そ
の後、揺動アーム111を移動させ、被洗浄基板Wfを
スピン乾燥する。
In this cleaning mechanism, the cleaning member 113a of the cleaning tool 113 is brought into contact with the upper surface of the substrate to be cleaned Wf which is rotated and held by the substrate holding and rotating mechanism 18, and is omitted in FIG. 5, but as shown in FIG. Then, chemical solution cleaning and pure water cleaning are performed while jetting a chemical solution from the chemical solution nozzles 23 and 23 and ultrapure water from the pure water nozzles 24 and 24 onto the upper and lower surfaces of the substrate Wf to be cleaned. Thereafter, the swing arm 111 is moved, and the substrate to be cleaned Wf is spin-dried.

【0023】図6及び図7は本発明に係る基板洗浄装置
を用いる基板研磨装置の構成を示す図であり、図6は平
面図、図7は断面図である。基板研磨装置は全体が隔壁
100によって囲まれており、研磨部30、洗浄部5
0、ロード・アンロード部70とから構成されている。
研磨部30と洗浄部50の間には隔壁101が設置さ
れ、洗浄部50とロード・アンロード部70との間には
隔壁102が設置されている。隣接する各部間の被研磨
基板の授受は、隔壁101、102に設けられた開口を
通して行うようになっている。
FIGS. 6 and 7 show the structure of a substrate polishing apparatus using the substrate cleaning apparatus according to the present invention. FIG. 6 is a plan view and FIG. 7 is a sectional view. The substrate polishing apparatus is entirely surrounded by a partition 100, and includes a polishing section 30, a cleaning section 5
0, a load / unload unit 70.
A partition 101 is provided between the polishing unit 30 and the cleaning unit 50, and a partition 102 is provided between the cleaning unit 50 and the load / unload unit 70. The transfer of the substrate to be polished between the adjacent parts is performed through openings provided in the partition walls 101 and 102.

【0024】基板研磨装置のロード・アンロード部70
は、クリーンルームCRに連通しており、それ以外の部
分はパーティションで仕切られたメンテナンスルームM
Rに設置されている。研磨部30はターンテーブル31
と、被研磨基板を保持しつつターンテーブル31に押し
付けるトップリング32を有するトップリングユニット
33とを具備している。ターンテーブル31は駆動部3
8により軸中心回りに回転可能となっている。また、タ
ーンテーブル31の上面に研磨クロス34が貼設されて
いる。
Load / unload section 70 of substrate polishing apparatus
Is connected to the clean room CR, and the other parts are separated from the maintenance room M by partitions.
It is installed at R. The polishing section 30 is a turntable 31
And a top ring unit 33 having a top ring 32 that presses against the turntable 31 while holding the substrate to be polished. The turntable 31 is a driving unit 3
8 enables rotation about the axis center. A polishing cloth 34 is attached to the upper surface of the turntable 31.

【0025】トップリングユニット33は揺動可能にな
っており,トップリング32を被研磨基板を受け渡すた
めのプッシャー37の上方の受渡し位置とのターンテー
ブル31上の研磨位置と待機位置に配置させるようにな
っている。トップリング32は、モータ及びシリンダ
(図示せず)に連結されている。これによって、トップ
リング32は昇降可能かつその軸心回りに回転可能にな
っており、被研磨基板を研磨クロス34に対して任意の
圧力で押圧できるようになっている。また被研磨基板は
トップリング32の下端面に真空等によって吸着される
ようになっている。ターンテーブル31の上方には砥液
供給ノズル(図示せず)が設置されており、砥液供給ノ
ズルによりターンテーブル31上の研磨クロス34に研
磨砥液が供給されるようになっている。研磨部にはさら
に研磨クロス34のコンディショニングを行うドレッサ
35を有するドレッサユニット36が配置されている。
The top ring unit 33 is swingable, and is disposed at a polishing position on the turntable 31 between a transfer position above the pusher 37 for transferring the substrate to be polished and a standby position. It has become. The top ring 32 is connected to a motor and a cylinder (not shown). Thus, the top ring 32 can move up and down and rotate around its axis, so that the substrate to be polished can be pressed against the polishing cloth 34 with an arbitrary pressure. The substrate to be polished is attracted to the lower end surface of the top ring 32 by vacuum or the like. A polishing liquid supply nozzle (not shown) is provided above the turntable 31 so that the polishing liquid is supplied to the polishing cloth 34 on the turntable 31 by the polishing liquid supply nozzle. The dressing unit further includes a dresser unit 36 having a dresser 35 for conditioning the polishing cloth 34.

【0026】洗浄部50は、中央部に設置され、矢印G
に示す方向に移動できる2基の搬送ロボット51、52
と、1次洗浄機53と、2次洗浄機54と、3次洗浄機
55と、被研磨基板を反転する反転機56、57を備え
ている。また、洗浄部50に隣接して設置されたロード
・アンロード部70には、被研磨基板を収納するカセッ
ト71が載置されている。カセット71内の被研磨基板
は搬送ロボット52によって受取られ、反転機56に移
送され、ここで反転された後、搬送ロボット51によっ
て研磨部30のプッシャー37に移送される。
The cleaning unit 50 is installed at the center,
Two transfer robots 51 and 52 that can move in the directions shown in FIG.
, A primary cleaning machine 53, a secondary cleaning machine 54, a tertiary cleaning machine 55, and reversing machines 56 and 57 for reversing a substrate to be polished. A cassette 71 for accommodating a substrate to be polished is placed on the loading / unloading section 70 installed adjacent to the cleaning section 50. The substrate to be polished in the cassette 71 is received by the transfer robot 52 and transferred to the reversing device 56, where it is turned over, and then transferred to the pusher 37 of the polishing section 30 by the transfer robot 51.

【0027】研磨部30で研磨された被研磨基板は、搬
送ロボット51によって反転機57に移送され,ここで
反転された後に1次洗浄機53と、2次洗浄機54と、
3次洗浄機55とに順次送られる。3次洗浄機55で洗
浄しスピン乾燥させた後、搬送ロボット52によりロー
ド・アンロード部70のカセットに戻される。図6に示
すように洗浄部50の隔壁には、洗浄部50内の空気を
外部に放出するための排気ダクト58が設置されてい
る。排気ダクト58は外部に連通されるようになってい
る。なお、図7においては、排気ダクト58を示すた
め、3次洗浄機55を省略している。
The substrate to be polished by the polishing section 30 is transferred by a transfer robot 51 to a reversing machine 57, where the substrate is reversed, and then a primary cleaning machine 53, a secondary cleaning machine 54,
It is sequentially sent to the tertiary washing machine 55. After being washed by the tertiary washing machine 55 and spin-dried, the transfer robot 52 returns the cassette to the loading / unloading unit 70. As shown in FIG. 6, an exhaust duct 58 for discharging the air in the cleaning unit 50 to the outside is provided on the partition wall of the cleaning unit 50. The exhaust duct 58 communicates with the outside. In FIG. 7, the tertiary washing machine 55 is omitted to show the exhaust duct 58.

【0028】被研磨基板の研磨中に研磨部30で発生し
た砥液ミストや発生ガスは、ターンテーブル31の駆動
部38の駆動ベルトの塵埃とともに排気ダクト39から
排気される。また、1次洗浄機53と、2次洗浄機54
と、3次洗浄機55で発生した洗浄水のミストは排気ダ
クト58’より排気されるようになっている。これらの
排気に見合う空気は、カセット受渡口72から、クリー
ンルームCR内の清浄空気が洗浄部50内に流入し、更
にフィルタブロック80の吸気口90から流入した空気
が洗浄部50内に吹出し、隔壁101に設けた被研磨基
板受渡口101aから研磨部30内に供給される。
The polishing liquid mist and generated gas generated in the polishing section 30 during polishing of the substrate to be polished are exhausted from the exhaust duct 39 together with dust on the drive belt of the drive section 38 of the turntable 31. Also, a primary cleaning machine 53 and a secondary cleaning machine 54
Then, the mist of the washing water generated in the tertiary washing machine 55 is exhausted from the exhaust duct 58 '. As for the air corresponding to these exhausts, the clean air in the clean room CR flows into the cleaning section 50 from the cassette transfer port 72, and the air flowing from the suction port 90 of the filter block 80 blows out into the cleaning section 50, and the partition wall. The substrate is supplied into the polishing section 30 through a substrate-to-be-polished delivery port 101 a provided in the substrate 101.

【0029】フィルタブロック80にはファン81が内
蔵され,該ファン81の出口側には濾過精度0.1μm
のHEPAフィルタ82が、またファン81の入口側に
は有害なガスを吸着除去するケミカルフィルタ83が取
付けられている。HEPAフィルタ82からの清浄な空
気は搬送ロボット51、52の移動範囲と1次洗浄機5
3と、2次洗浄機54と、3次洗浄機55を含む範囲、
つまり被研磨基板の移動範囲に吹き降ろされ、吹き降ろ
された空気の一部は前述した研磨部30へ流れ、大部分
は装置床面へ降下する。
The filter block 80 has a built-in fan 81. The outlet of the fan 81 has a filtration accuracy of 0.1 μm.
The HEPA filter 82 is attached, and a chemical filter 83 for adsorbing and removing harmful gas is attached to the inlet side of the fan 81. The clean air from the HEPA filter 82 is transferred to the moving range of the transfer robots 51 and 52 and the primary cleaning machine 5.
3, a range including the secondary cleaning machine 54 and the tertiary cleaning machine 55,
In other words, the air is blown down into the moving range of the substrate to be polished, and a part of the air blown down flows to the polishing section 30 described above, and most of the air descends to the floor of the apparatus.

【0030】床面には偏平な箱状の管であるダクトヘッ
ダ59が取付けられ、このダクトヘッダ59には多数の
穴60が設けられ、穴60には開口面積を変化できるよ
うに羽根(図示せず)が付いている。ダクトヘッダ59
はダクト61でフィルタブロック80に接続されてい
る。装置床面に降下した空気は、前記穴60から吸い込
まれ、ダクトヘッダ59に集められ、ダクト61を通っ
てケミカルフィルタ83に吸い込まれる。
A duct header 59, which is a flat box-shaped tube, is mounted on the floor surface. The duct header 59 is provided with a large number of holes 60, and the holes 60 have blades (FIG. (Not shown). Duct header 59
Are connected to a filter block 80 by a duct 61. The air that has descended to the floor of the apparatus is sucked through the hole 60, collected in the duct header 59, and drawn into the chemical filter 83 through the duct 61.

【0031】1次洗浄機53、2次洗浄機54、3次洗
浄機55の少なくとも1つには図1又は図3に示す構成
の基板洗浄装置10が用いられており(図では図1に示
す基板洗浄装置)、その排気口17、17からの排気は
排気ダクト58’に流れるようになっている。これによ
り、洗浄槽11内の圧力PINが洗浄槽11外(洗浄部5
0内)圧力POUTより小さい場合、即ちPIN<POUTとな
ると、この圧力差により開閉扉14が図1の矢印B方向
に回動して、開口16を開放する。これにより開口16
及び吸気口12を通って清浄空気が洗浄槽11に導入さ
れ、槽内でダウンフローを形成して排気口17、17か
ら排出され、排気ダクト58’に排出される。
A substrate cleaning apparatus 10 having the structure shown in FIG. 1 or FIG. 3 is used for at least one of the primary cleaning machine 53, the secondary cleaning machine 54, and the tertiary cleaning machine 55 (in FIG. 1, FIG. (Substrate cleaning apparatus shown), the exhaust from the exhaust ports 17 and 17 flows to an exhaust duct 58 '. As a result, the pressure P IN in the cleaning tank 11 becomes outside the cleaning tank 11 (the cleaning section 5).
If the pressure P OUT is smaller than the pressure P OUT , that is, if P IN <P OUT , the pressure difference causes the opening / closing door 14 to rotate in the direction of arrow B in FIG. As a result, the opening 16
Then, clean air is introduced into the cleaning tank 11 through the suction port 12, forms a downflow in the tank, is discharged from the exhaust ports 17, 17, and is discharged to the exhaust duct 58 '.

【0032】このダウンフローの雰囲気中で、薬液ノズ
ル23、23から薬液として希フッ酸(DHF)液等を
基板保持回転機構18で保持され回転している被洗浄基
板Wfの上下面に噴射し、被洗浄基板Wfを薬液洗浄す
る。続いて純水ノズル24、24から被洗浄基板Wfの
上下面に超純水を噴射し、被洗浄基板Wfを純水洗浄す
る。続いて、基板保持回転機構18の高速回転により被
洗浄基板Wfを高速回転し、その遠心力により表面に付
着している液滴を除去して被洗浄基板Wfをスピン乾燥
させる。
In this down-flow atmosphere, a diluted hydrofluoric acid (DHF) solution or the like is injected as a chemical from the chemical nozzles 23 onto the upper and lower surfaces of the rotating substrate Wf held and rotated by the substrate holding / rotating mechanism 18. Then, the substrate Wf to be cleaned is cleaned with a chemical solution. Subsequently, ultrapure water is sprayed from the pure water nozzles 24 onto the upper and lower surfaces of the substrate Wf to be cleaned, and the substrate Wf to be cleaned is cleaned with pure water. Subsequently, the substrate to be cleaned Wf is rotated at a high speed by the high-speed rotation of the substrate holding / rotating mechanism 18, and the centrifugal force removes droplets adhering to the surface to spin dry the substrate to be cleaned Wf.

【0033】排気ダクト58’に接続されている排気系
の故障等により、PIN≧POUTとなった場合、図2に示
すように開閉扉14は錘14aにより、空気導入室13
の開口16を閉じるから、洗浄槽11内を密閉状態にす
るから、希フッ酸(DHF)液等の洗浄雰囲気が洗浄槽
11に拡散することなく、ある時間は安全に保つことが
できる。
When P IN ≧ P OUT due to a failure of the exhaust system connected to the exhaust duct 58 ′, as shown in FIG.
Since the opening 16 of the cleaning tank 11 is closed, the cleaning atmosphere such as dilute hydrofluoric acid (DHF) is not diffused into the cleaning tank 11 and the cleaning tank 11 can be kept safe for a certain time.

【0034】上記基板研磨装置の洗浄部50に図3に示
す構成の基板洗浄装置を用いた場合は、制御部28は内
部圧力PINと外部圧力POUTを比較し、PIN<POUTの場
合回転扉26を矢印C方向に回転し、吸気口12を開放
する。逆にPIN≧POUTの場合は回転扉26を矢印Cと
は反対方向に回転させ、図4に示すように吸気口12を
閉じるから、上記と同様になる。
When a substrate cleaning apparatus having the structure shown in FIG. 3 is used as the cleaning section 50 of the substrate polishing apparatus, the control section 28 compares the internal pressure P IN with the external pressure P OUT and determines that P IN <P OUT . In this case, the revolving door 26 is rotated in the direction of arrow C to open the air inlet 12. Conversely, when P IN ≧ P OUT , the revolving door 26 is rotated in the direction opposite to the arrow C to close the intake port 12 as shown in FIG.

【0035】なお、上記例では本発明に係る基板処理装
置として、基板を研磨処理する基板研磨装置を例に説明
したが、基板に何等かの処理を施した後、該処理した基
板を洗浄する洗浄部を有する基板処理装置であれば、本
発明に係る基板洗浄装置が利用できることは当然であ
る。
In the above example, a substrate polishing apparatus for polishing a substrate has been described as an example of a substrate processing apparatus according to the present invention. However, after performing some processing on the substrate, the processed substrate is cleaned. It is a matter of course that the substrate cleaning apparatus according to the present invention can be used as long as the substrate processing apparatus has a cleaning unit.

【0036】[0036]

【発明の効果】以上説明したように請求項1乃至3に記
載の発明によれば、下記のような優れた効果が期待でき
る。
As described above, according to the first to third aspects of the present invention, the following excellent effects can be expected.

【0037】(1)洗浄槽内の圧力PINが洗浄槽外の圧
力POUTより小さい場合、即ちPIN<POUTの場合、開閉
手段で吸気口を開放し、吸気口から清浄な空気を導入
し、洗浄槽底部の排気口から排出するので、洗浄槽内に
清浄な空気によりダウンフローが形成され、洗浄液(薬
液等)の雰囲気の拡散を防ぎつつ被洗浄基板の洗浄乾燥
を行うことができるから、一つの槽内で薬液洗浄及びス
ピン乾燥を行っても、薬液雰囲気の拡散防止及び乾燥時
のミストの再付着の防止ができる基板洗浄装置を提供で
きる。また、一つの槽内で薬液洗浄及びスピン乾燥を行
えるので装置が小型となる。
(1) When the pressure P IN in the cleaning tank is smaller than the pressure P OUT outside the cleaning tank, that is, when P IN <P OUT , the opening / closing means opens the intake port, and clean air is supplied from the intake port. Since it is introduced and discharged from the exhaust port at the bottom of the cleaning tank, a downflow is formed by clean air in the cleaning tank, and the substrate to be cleaned can be cleaned and dried while preventing the diffusion of the atmosphere of the cleaning liquid (chemical solution, etc.). Therefore, even if the chemical solution is washed and spin-dried in one tank, it is possible to provide a substrate cleaning apparatus capable of preventing the diffusion of the chemical solution atmosphere and preventing the mist from reattaching during drying. In addition, since the chemical cleaning and spin drying can be performed in one tank, the size of the apparatus can be reduced.

【0038】(2)また、排気系の故障等により洗浄槽
内の圧力が洗浄槽外の圧力以上となった場合(PIN≧P
OUT)、洗浄槽上部の吸気口を開閉手段で閉塞するか
ら、ある時間は密閉構造が維持でき、薬液雰囲気の拡散
を防止できる安全な基板洗浄装置を提供できる。
(2) Further, when the pressure inside the cleaning tank becomes higher than the pressure outside the cleaning tank due to a failure of the exhaust system or the like (P IN ≧ P
OUT ), since the intake port at the top of the cleaning tank is closed by the opening / closing means, a sealed structure can be maintained for a certain time, and a safe substrate cleaning apparatus capable of preventing diffusion of the chemical solution atmosphere can be provided.

【0039】請求項4に記載の発明によれば、基板洗浄
部に請求項1乃至3のいずれか一つの基板洗浄装置を用
いるので、洗浄部からの薬液雰囲気の拡散の防止及び洗
浄部での基板乾燥時にミストの再付着の防止ができる基
板処理装置を提供できる。また、基板洗浄装置の排気系
の故障等により洗浄槽内の圧力が洗浄槽外の圧力以上と
なった場合、洗浄槽上部の吸気口を開閉手段で閉塞する
から、洗浄液(薬液等)の雰囲気が洗浄槽外に拡散する
ことのない基板処理装置が提供できる。
According to the fourth aspect of the present invention, since the substrate cleaning apparatus according to any one of the first to third aspects is used in the substrate cleaning section, the diffusion of the chemical solution atmosphere from the cleaning section is prevented and the cleaning section is used. It is possible to provide a substrate processing apparatus capable of preventing mist from re-adhering when the substrate is dried. Further, when the pressure in the cleaning tank becomes higher than the pressure outside the cleaning tank due to a failure of the exhaust system of the substrate cleaning apparatus or the like, the intake port at the top of the cleaning tank is closed by the opening / closing means, so that the atmosphere of the cleaning liquid (chemical solution, etc.) A substrate processing apparatus can be provided that does not diffuse out of the cleaning tank.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る基板洗浄装置の概略構成例を示す
図である。
FIG. 1 is a diagram showing a schematic configuration example of a substrate cleaning apparatus according to the present invention.

【図2】図1の基板洗浄装置の空気導入室部の開閉扉の
動作例を示す図である。
FIG. 2 is a diagram illustrating an operation example of an opening / closing door of an air introduction chamber of the substrate cleaning apparatus of FIG. 1;

【図3】本発明に係る基板洗浄装置の概略構成例を示す
図である。
FIG. 3 is a diagram showing a schematic configuration example of a substrate cleaning apparatus according to the present invention.

【図4】図3の基板洗浄装置の吸気口の開閉扉の動作例
を示す図である。
FIG. 4 is a diagram illustrating an operation example of an opening / closing door of an intake port of the substrate cleaning apparatus of FIG. 3;

【図5】本発明に係る基板洗浄装置の洗浄機構の構成例
を示す図である。
FIG. 5 is a diagram illustrating a configuration example of a cleaning mechanism of the substrate cleaning apparatus according to the present invention.

【図6】本発明に係る基板研磨装置の概略構成例を示す
平面図である。
FIG. 6 is a plan view showing a schematic configuration example of a substrate polishing apparatus according to the present invention.

【図7】本発明に係る基板研磨装置の概略構成例を示す
断面図である。
FIG. 7 is a cross-sectional view illustrating a schematic configuration example of a substrate polishing apparatus according to the present invention.

【符号の説明】 10 基板洗浄装置 11 洗浄槽 12 吸気口 13 空気導入室 14 開閉扉 15 ヒンジ機構 16 開口 17 排気口 18 基板保持回転機構 19 挟持部材 20 基台 21 回転軸 22 シール機構 23 薬液ノズル 24 純水ノズル 25 ドレン孔 26 回転扉 27 回転駆動機構 28 制御部 29 内圧センサ 29’ 外圧センサ 30 研磨部 50 洗浄部 70 ロード・アンロード部 80 フィルタブロックDESCRIPTION OF SYMBOLS 10 Substrate cleaning device 11 Cleaning tank 12 Intake port 13 Air introduction chamber 14 Opening / closing door 15 Hinge mechanism 16 Opening 17 Exhaust port 18 Substrate holding and rotating mechanism 19 Nipping member 20 Base 21 Rotating shaft 22 Sealing mechanism 23 Chemical liquid nozzle 24 Pure water nozzle 25 Drain hole 26 Rotating door 27 Rotation drive mechanism 28 Control unit 29 Internal pressure sensor 29 'External pressure sensor 30 Polishing unit 50 Cleaning unit 70 Load / unload unit 80 Filter block

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 洗浄槽を具備し、該洗浄槽の上部に吸気
口を設け、底部に排気口を設け該洗浄槽内にダウンフロ
ーを形成すると共に、該洗浄槽内で被洗浄基板を回転
し、同一洗浄槽内で該被洗浄基板の洗浄及び乾燥処理が
できるようにした基板洗浄装置であって、 前記吸気口を閉塞及び開放する開閉手段を設け、 前記洗浄槽内の圧力をPIN、前記洗浄槽外の圧力をP
OUTとし、PIN<POUTの場合前記開閉手段で前記吸気口
を開放すると共に、PIN≧POUTの場合前記吸気口を閉
塞することを特徴とする基板洗浄装置。
1. A cleaning tank is provided, an intake port is provided at an upper part of the cleaning tank, an exhaust port is provided at a bottom part, a down flow is formed in the cleaning tank, and a substrate to be cleaned is rotated in the cleaning tank. A substrate cleaning apparatus capable of cleaning and drying the substrate to be cleaned in the same cleaning tank, provided with opening / closing means for closing and opening the suction port, and setting the pressure in the cleaning tank to PIN. , The pressure outside the washing tank
The substrate cleaning apparatus is characterized in that the opening is opened by the opening / closing means when P IN <P OUT and the intake port is closed when P IN ≧ P OUT .
【請求項2】 請求項1に記載の基板洗浄装置におい
て、 前記開閉手段はPIN≧POUTの時、重力及び前記洗浄槽
内外の圧力差を利用して前記吸気口を閉塞し、PIN<P
OUTの時前記洗浄槽内外の圧力差により前記吸気口を開
く扉であることを特徴とする基板洗浄装置。
In the substrate cleaning apparatus according to the claim 1, wherein the switching means when the P IN ≧ P OUT, by utilizing a pressure difference of gravity and the cleaning tank and out to close the air inlet, P IN <P
A substrate cleaning apparatus characterized in that the substrate cleaning apparatus is a door that opens the intake port by a pressure difference between the inside and outside of the cleaning tank at the time of OUT .
【請求項3】 請求項1に記載の基板洗浄装置におい
て、 前記開閉手段は前記吸気口を開閉する扉と、前記洗浄槽
内の圧力PINを検出する槽内圧センサと前記洗浄槽外の
圧力POUTを検出する槽外圧センサとを具備し、PIN
OUTの場合前記吸気口を開放すると共にPIN≧POUT
場合前記吸気口を閉塞するように前記扉を駆動制御する
扉駆動制御手段を具備することを特徴とする基板洗浄装
置。
3. The substrate cleaning apparatus according to claim 1, wherein the opening / closing means includes a door that opens and closes the intake port, a tank pressure sensor that detects a pressure P IN in the cleaning tank, and a pressure outside the cleaning tank. ; and a Sogaiatsu sensor for detecting a P OUT, P IN <
Substrate cleaning apparatus characterized by comprising a door driving control means for controlling driving the door so as to close the case of the P IN ≧ P OUT the intake port while opening the case of P OUT the intake port.
【請求項4】 被処理基板を搬入搬出するロード・アン
ロード部、被処理基板を処理する基板処理部、被処理基
板を洗浄し乾燥させる基板洗浄部及び各部に基板を搬送
する基板搬送機構を具備し、前記基板搬送機構により、
前記ロード・アンロード部から未処理の被処理基板を取
出し前記基板処理部に搬送し、該基板処理部で処理され
た被処理基板を前記基板洗浄部に搬送し、該基板洗浄部
で洗浄し乾燥させた被処理基板を前記ロード・アンロー
ド部に搬送し収容する基板処理装置において、 前記基板洗浄部には少なくとも1台の洗浄装置が設置さ
れており、該洗浄装置の少なくとも1台に請求項1乃至
3のいずれか一つの基板洗浄装置を用いることを特徴と
する基板処理装置。
4. A load / unload section for loading and unloading a substrate to be processed, a substrate processing section for processing a substrate to be processed, a substrate cleaning section for cleaning and drying the substrate to be processed, and a substrate transport mechanism for transporting the substrate to each section. Comprising, by the substrate transfer mechanism,
Take out the unprocessed substrate from the loading / unloading unit, transport the substrate to the substrate processing unit, transport the substrate to be processed in the substrate processing unit to the substrate cleaning unit, and clean the substrate in the substrate cleaning unit. In a substrate processing apparatus that transports and stores a dried substrate to be loaded and unloaded in the loading / unloading section, at least one cleaning apparatus is installed in the substrate cleaning section, and at least one of the cleaning apparatuses is charged. A substrate processing apparatus using the substrate cleaning apparatus according to any one of Items 1 to 3.
JP2000229104A 2000-07-28 2000-07-28 Substrate cleaning apparatus and substrate processing apparatus Pending JP2002043272A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000229104A JP2002043272A (en) 2000-07-28 2000-07-28 Substrate cleaning apparatus and substrate processing apparatus
US09/915,289 US6616512B2 (en) 2000-07-28 2001-07-27 Substrate cleaning apparatus and substrate polishing apparatus with substrate cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000229104A JP2002043272A (en) 2000-07-28 2000-07-28 Substrate cleaning apparatus and substrate processing apparatus

Publications (2)

Publication Number Publication Date
JP2002043272A true JP2002043272A (en) 2002-02-08
JP2002043272A5 JP2002043272A5 (en) 2005-08-04

Family

ID=18722278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000229104A Pending JP2002043272A (en) 2000-07-28 2000-07-28 Substrate cleaning apparatus and substrate processing apparatus

Country Status (1)

Country Link
JP (1) JP2002043272A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059795A (en) * 2007-08-30 2009-03-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2011043584A (en) * 2009-08-19 2011-03-03 Shin-Etsu Chemical Co Ltd Cleaning apparatus and cleaning method for substrate
JP5223091B2 (en) * 2006-03-20 2013-06-26 高橋金属株式会社 Cleaning device using aqueous cleaning solution
WO2014103523A1 (en) * 2012-12-28 2014-07-03 大日本スクリーン製造株式会社 Treatment device, exhaust switching device therefor, exhaust switching unit and switching valve box
JP2015204322A (en) * 2014-04-11 2015-11-16 株式会社ディスコ Cleaning device
KR20170108272A (en) * 2016-03-17 2017-09-27 주성엔지니어링(주) Substrate disposition apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5223091B2 (en) * 2006-03-20 2013-06-26 高橋金属株式会社 Cleaning device using aqueous cleaning solution
JP2009059795A (en) * 2007-08-30 2009-03-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2011043584A (en) * 2009-08-19 2011-03-03 Shin-Etsu Chemical Co Ltd Cleaning apparatus and cleaning method for substrate
WO2014103523A1 (en) * 2012-12-28 2014-07-03 大日本スクリーン製造株式会社 Treatment device, exhaust switching device therefor, exhaust switching unit and switching valve box
JPWO2014103523A1 (en) * 2012-12-28 2017-01-12 株式会社Screenホールディングス Processing device, exhaust gas switching device, exhaust gas switching unit and switching valve box
US10471479B2 (en) 2012-12-28 2019-11-12 SCREEN Holdings Co., Ltd. Treatment device and exhaust switching device therefor, and exhaust switching unit and switching valve box
JP2015204322A (en) * 2014-04-11 2015-11-16 株式会社ディスコ Cleaning device
KR20170108272A (en) * 2016-03-17 2017-09-27 주성엔지니어링(주) Substrate disposition apparatus
KR102478902B1 (en) 2016-03-17 2022-12-20 주성엔지니어링(주) Substrate disposition apparatus

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