CN103227234B - The Etaching device of local without mask, method and system - Google Patents
The Etaching device of local without mask, method and system Download PDFInfo
- Publication number
- CN103227234B CN103227234B CN201210025727.6A CN201210025727A CN103227234B CN 103227234 B CN103227234 B CN 103227234B CN 201210025727 A CN201210025727 A CN 201210025727A CN 103227234 B CN103227234 B CN 103227234B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- local
- etched
- mask
- thing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides without mask local Etaching device, without mask local engraving method and without mask local etch system。Including according to an aspect of the invention, it is provided a kind of without mask local Etaching device: feed pipe, it provides chemical reagent to the surface being etched thing；Discharging tube, its by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And connection member, state feed pipe and the relatively-movable mode of above-mentioned discharging tube above, above-mentioned feed pipe and above-mentioned discharging tube are connected。
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to without mask local Etaching device, without mask local engraving method and without mask local etch system。
Background technology
It is utilize method chemically or physically that local etching (is also called local corrosion or localized etching), some or more than one specific region at material surface, materials different to one or more layers of chemical composition or physical property is removed, this material is made to form specific space or/and material structure, in order to be formed with the device of particular optical performance, electric property and/or photoelectric properties。Existing local etching technique mainly has several。
A. photoetching
Photoetching is a kind of chemical etching having mask; it is first to cover layer protecting film and photoresist at material surface; then the certain area irradiated on this protecting film is used up; the protecting film making irradiated area decomposes; or make the protecting film beyond irradiated area decompose, then use chemical reagent to be etched away by the surfacing that protecting film decomposition region or the region that is not decomposed are exposed。The advantage of the method is mainly: the live width of the etch pit that etching obtains can be only small, can reach 30 nanometers；Etch the damage of remaining material is also only small。But the fatal weakness one of photoetching is that the photoresist used is big for environment pollution；Two is the relatively costly of photoetching process。
B. plasma etching
Plasma etching is to be etched in the cavity of material in placement to pass into one or more working gas, produces plasma under electric field action, and then this plasma bombardment material surface needs the surface of etching, until reaching certain etch depth。The material surface area that need not etch is covered by mask plate, to reach protective effect。The advantage of plasma etching is that mask plate can reuse, but weak point is: the waste gas such as the fluoride discharged after etching are general more difficult, and this waste gas is also relatively big to the pollution of environment, also has, and the speed of etching is also slower。
C. el
El is directly to bombard material surface to need the region of etching with electron beam, makes this region certain bowl configurations occur。The live width that the method advantage is etch structures is minimum, and even up to 10 nanometers, but the method process speed is very slow, and apparatus expensive is costly。
D. laser-induced thermal etching
To in the etching less demanding situation of live width, namely live width can more than 5 microns, and some device etch process can adopt laser ablation method。Laser-induced thermal etching is the laser adopting high-energy-density, irradiate material surface and need the region of etching, the processes such as the surfacing in this region stands to be heated, melts, the physics even chemistry of vaporize, the formed series of complexes such as plasma, volatilization, sputtering, ultimately form the pit of definite shape。The advantage of the method is not need mask, etching speed quickly, but its shortcoming be etching after have damage, damage layer depth to commonly reach more than 10 microns material surface。After laser-induced thermal etching, the region to its damage is also needed to carry out follow-up chemically or physically process, to eliminate these damages。
Summary of the invention
The subject matter of above conventional etching process is: 1. photoetching technique needs photoresist, and this photoresist environmental pollution is relatively big, relatively costly；2. the waste gas environmental pollutions such as plasma etching is also required to mask, produced fluoride are bigger；3. el process speed is very slow, expensive；4. laser-induced thermal etching is very big to being etched material damage。
For the problem existing for traditional engraving method, the present invention proposes a kind of without mask local Etaching device, without mask local engraving method and without mask local etch system, specifically provides following device, method and system。
[1] a kind of without mask local Etaching device, it is characterised in that to include:
Feed pipe, it provides chemical reagent to the surface being etched thing；
Discharging tube, its by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And
Connection member, states feed pipe and the relatively-movable mode of above-mentioned discharging tube above, above-mentioned feed pipe and above-mentioned discharging tube is connected。
[2] Etaching device of local without mask according to above-mentioned [1], it is characterised in that
The above-mentioned thing that is etched includes solar cell or solar module, and above-mentioned surface includes above-mentioned solar cell or the front of solar module, the back side and/or side。
[3] Etaching device of local without mask according to above-mentioned [1] or [2], it is characterised in that
In above-mentioned discharging tube and above-mentioned feed pipe one is interior pipe, and another is outer tube。
[4] Etaching device of local without mask according to above-mentioned [3], it is characterised in that also include:
Seal member between above-mentioned outer tube and above-mentioned surface to be etched。
[5] Etaching device of local without mask according to above-mentioned [3], it is characterised in that
The shape of the etched port of above-mentioned outer tube is corresponding with the pattern being etched place of the above-mentioned thing that is corroded and/or shape。
[6] Etaching device of local without mask according to above-mentioned [5], it is characterised in that
The etched port of above-mentioned outer tube be shaped as groove shapes。
[7] Etaching device of local without mask according to any one of above-mentioned [1]-[6], it is characterised in that
Above-mentioned connection member is in the way of sealing the junction of above-mentioned feed pipe and above-mentioned discharging tube, and just above-mentioned feed pipe and above-mentioned discharging tube connect。
[8] Etaching device of local without mask according to any one of above-mentioned [1]-[7], it is characterised in that
Above-mentioned connection member includes corrugated tube, spring members, screwed part or its combination。
[9] Etaching device of local without mask according to any one of above-mentioned [1]-[8], it is characterised in that
The inside of above-mentioned discharging tube is negative pressure。
[10] Etaching device of local without mask according to any one of above-mentioned [1]-[9], it is characterised in that
Above-mentioned chemical reagent includes H2O、H3PO4、HNO3, HF, NaOH, KOH, organic solvent or its mixture。
[11] a kind of without mask local engraving method, it is characterised in that to comprise the following steps:
Feed pipe is utilized to provide chemical reagent to the surface being etched thing；
Utilize discharging tube by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And
By making above-mentioned feed pipe and above-mentioned discharging tube relative movement, regulate etching speed, etch depth and/or etch profile。
[12] engraving method of local without mask according to above-mentioned [11], it is characterised in that
The above-mentioned thing that is etched includes solar cell or solar module, and above-mentioned surface includes above-mentioned solar cell or the front of solar module, the back side and/or side。
[13] engraving method of local without mask according to above-mentioned [11] or [12], it is characterised in that
In above-mentioned discharging tube and above-mentioned feed pipe one is interior pipe, and another is outer tube。
[14] engraving method of local without mask according to above-mentioned [13], it is characterised in that the step of above-mentioned adjustment etching speed, etch depth and/or etch profile includes:
By making above-mentioned interior pipe vertically move relative to above-mentioned outer tube, regulate etching speed, etch depth and/or etch profile。
[15] engraving method of local without mask according to above-mentioned [13], it is characterised in that
The shape of the etched port of above-mentioned outer tube is corresponding with the pattern being etched place of the above-mentioned thing that is corroded and/or shape。
[16] engraving method of local without mask according to above-mentioned [15], it is characterised in that
The etched port of above-mentioned outer tube be shaped as groove shapes。
[17] engraving method of local without mask according to any one of above-mentioned [11]-[16], it is characterised in that further comprising the steps of:
When above-mentioned be etched thing at the depth direction of etch pit, there is the material of different component, change the composition of above-mentioned chemical reagent, ratio and/or temperature。
[18] engraving method of local without mask according to any one of above-mentioned [11]-[17], it is characterised in that
Above-mentioned chemical reagent includes H2O、H3PO4、HNO3, HF, NaOH, KOH, organic solvent or its mixture。
[19] a kind of without mask local etch system, it is characterised in that to include:
Multiple Etaching devices of local without mask according to any one of above-mentioned [1]-[10]。
[20] etch system of local without mask according to above-mentioned [19], it is characterised in that
Above-mentioned multiple Etaching device of local without mask lines up array。
The Etaching device of local without mask of the present invention, method and system, it is when need not when being etched material surface mask film covering, just can make in-situ materials and the exogenous chemical material generation chemical reaction of the specific region of this material surface, the region that material is consumed in position forms pit, to reach the purpose of etching；This material surface need not etched region, exogenous chemical material does not contact with machined material, thus does not also just occur chemical etching to react。
Accompanying drawing explanation
Fig. 1 is the stereoscopic figure of the Etaching device of local without mask of one embodiment of the present of invention。
Fig. 2 is the longitudinal profile perspective view of the Etaching device of local without mask of the present embodiment。
Fig. 3 is the fundamental diagram of the Etaching device of local without the mask etching material surface utilizing the present embodiment。
Fig. 4 is the schematic diagram utilizing the Etaching device of local without mask of the present embodiment to remove solar cell electric leakage。
Fig. 5 is the schematic diagram of the Etaching device etch component of local without mask utilizing the present embodiment。
Fig. 6 is the stereoscopic figure of the variation of the Etaching device of local without mask of the present invention。
Fig. 7 is the decomposing schematic representation utilizing the Etaching device of local without mask of this variation to carry out edge etch。
Fig. 8 is the schematic diagram utilizing the Etaching device of local without mask of this variation to carry out edge etch。
Label declaration:
1 outer tube；Pipe in 2；3 connection members；4 outer tube external connection end；5 are etched thing；6 chemical reagent；7 reaction products and chemical residue；8 gas leakages；9 mixture；10 antireflective films；11 launch sites；12 bases；13 back electrodes；14 front surface glass；15EVA；16 solar cells；17EVA；18 backboards。
Detailed description of the invention
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings。It addition, in the following description, the length of the various piece in accompanying drawing, size, thin and thick, size, ratio etc. are likely to different from reality。
The Etaching device of local without mask of the present embodiment includes: feed pipe, and it provides chemical reagent to the surface being etched thing；Discharging tube, its by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And connection member, state feed pipe and the relatively-movable mode of above-mentioned discharging tube above, above-mentioned feed pipe and above-mentioned discharging tube are connected。
In the present embodiment, the above-mentioned thing that is etched can be solar cell or solar module, and above-mentioned surface includes above-mentioned solar cell or the front of solar module, the back side and/or side。In above-mentioned discharging tube and above-mentioned feed pipe one is interior pipe, and another is outer tube。Connection member is to make outer tube and interior pipe longitudinally can the corrugated tube of relative movement, spring members, screwed part or its combination。In the present invention, except corrugated tube, spring members, screwed part, other all can enable outer tube and interior pipe and longitudinally can the device of relative movement can use, this is not had any restriction by the present invention。It addition, the material that outer tube, interior pipe and connection member are etched by chemically-resistant is formed。
Describe the Etaching device of local without mask of the present embodiment with reference to the accompanying drawings in detail。
Fig. 1 and 2 is the schematic diagram of the Etaching device of local without mask of the present embodiment。Fig. 1 is the stereoscopic figure of the Etaching device of local without mask of one embodiment of the present of invention。Fig. 2 is the longitudinal profile perspective view of the Etaching device of local without mask of the present embodiment。
As it is shown in figure 1, the Etaching device of local without mask of the present embodiment includes outer tube 1, interior pipe 2, outer tube external connection end 4 and connection member 3。
As in figure 2 it is shown, outer tube 1 and interior pipe 2 can be cylindrical shapes in the cross section of vertical tube cavity direction can also be other arbitrary shape。The effect of connection member 3 be make outer tube 1 and interior pipe 2 longitudinally can relative movement, connection member 3 corrugated tube in the example in the figures but it also may be make outer tube 1 and the interior pipe 2 longitudinally can any device of relative movement certain distance。
The operation principle of the Etaching device of local without the mask etching material surface of the present embodiment is as shown in Figure 3。The lower end mouth of pipe of outer tube 1 is contacted and is maintained at the surface being etched thing 5, the lower end mouth of pipe simultaneously making interior pipe 2 has certain space with being etched thing 5 surface, this space can be owing to being etched the space that the lower end mouth of pipe out-of-flatness of thing 5 surface irregularity or interior pipe 2 causes, it is also possible to is be integrated with the space that a segment distance causes owing to being etched the lower end mouth of pipe of the surface of thing 5 and interior pipe 2。In entering from the upper end of interior pipe 2 with the chemical reagent 6 being etched thing 5 surface reaction in the pipe of pipe 2, then react with the surface mass being etched thing 5；Reaction product and chemical residue 7 are drained from the lower end mouth of pipe of interior pipe 2 and the space being etched the formation of thing 5 surface, and enter the space that outer tube 1 is formed with interior pipe 2；Simultaneously outer tube 1 be etched contact position, thing 5 surface due to blow-by, have air and enter in outer tube, form gas leakage 8。Then, gas leakage 8, reaction product and chemical residue 7 mixture 9 formed is discharged from outer tube external connection end 4。So, below interior pipe 2, due to be etched thing 5 surface atom participate in chemical reaction and along with reactant is pulled away, thus forming an etch pit。Outer tube 1, interior pipe 2 and outer tube external connection end 4 are all made up of corrosion resistant stable material, and they do not react to each other with chemical reagent 6, reaction product and chemical residue 7, gas leakage 8 and mixture 9。
It addition, in order to reduce produced gas leakage 8 as far as possible, it is possible at outer tube 1 and the seal member being etched the port that thing 5 surface contacts and adding such as sealing ring etc.。
Also have, in order to be effectively prevented reaction product and chemical residue 7 from the etched port of outer tube 1 be etched air gap leakage that thing 5 surface formed to outside outer tube 1, the geometry without mask local Etaching device outer tube 1 etched port can be determined according to the pattern feature near the place of being etched and the place of being etched, so that when etching, etched port and the gap being etched between thing 5 surface of outer tube 1 reduce as far as possible。Such as, wanting the relatively thin side being etched thing 5 of etched thickness or before side or/and during position, rear surface, outer tube 1 etched port can adopt groove shapes as shown in Figure 6, but it is not limited to the shape shown in Fig. 6, as long as the shape of the etched port of outer tube 1 is corresponding with the pattern being etched place of the thing 5 that is corroded and/or shape, its objective is, when etching, to reduce the etched port of outer tube 1 and the gap being etched between thing 5 surface。
In the above process, as shown in Figure 3, the flow direction of chemical reagent is to enter from interior pipe 2, flowing out from outer tube external connection end 4, now, the power required for the flowing of each material composition is to be provided by the produced negative pressure such as the negative pressure pump connected with outer tube external connection end 4 or miscellaneous equipment, or at the same time, connecting the positive pressure devices such as positive pressure pump at the external connection end place of interior pipe 2, in order to provide a malleation to the chemical reagent 6 in interior pipe 2, in namely, pipe 2 has a malleation relative to etching place being etched thing 5 surface。
Additionally, the flow direction of chemical composition can also enter from outer tube external connection end 4, flow out from the external connection end of interior pipe 2, now, power required for the flowing of each material composition is to be provided by the produced negative pressure such as the negative pressure pump connected with interior pipe 2 or miscellaneous equipment, or at the same time, connects the positive pressure devices such as positive pressure pump at outer tube external connection end 4 place, provide a malleation to the chemical reagent 6 inside outer tube external connection end 4, namely there is a malleation relative to etching place being etched thing 5 surface in outer tube external connection end 4；These provide negative pressure or/and the device of malleation, are referred to as Dynamic system。That is, the negative pressure that the power of chemical substance flowing is produced by outer tube external connection end 4, or have the malleation that interior pipe 2 external connection end produces to provide simultaneously；The negative pressure that the power of chemical substance flowing can also be produced by interior pipe 2 external connection end, or have the malleation that outer tube external connection end 4 produces to provide simultaneously；These negative pressure and malleation are relative to be etched etching place on thing 5 surface。
When being etched thing 5 surface, etch pit and the intensification along with etch pit occur, the lower end mouth of pipe and the space being etched between thing 5 of interior pipe 2 are strengthened, in order to make chemical reagent 6 contact with needing the surface continuing etching better, by the effect of connection member 3, make the lower end mouth of pipe that the decline of interior pipe 2 reduces interior pipe 2 and the space being etched between thing 5 surface。In etching process, the distance of interior pipe 2 and outer tube 1 relative movement can as a scalar of the etch pit degree of depth obtained。Thus, by the distance of interior pipe 2 with outer tube 1 relative movement, it is possible to control the degree of depth of etch pit。By the lower end mouth of pipe regulating interior pipe 2 and the space being etched between thing 5, it is also possible to control the flowing velocity of chemical reagent 6, in order to reach the etching speed controlling to be etched thing 5 surface。Additionally, when the lower end mouth of pipe of outer tube 1 be positioned at etching be etched diverse location on thing 5 surface time, the fluid field formed in the various chemical compositions on etch pit surface is different, thus continuing the chemical reaction type on etch pit surface of etching and/or response speed is also different, so, by the lower end mouth of pipe regulating interior pipe 2 and the space being etched between thing 5, it is possible to control the pattern on etch pit surface。In a word, the relative movement of interior pipe 2 and outer tube 1 is controlled by connection member 3, it is possible to control the pattern on the etch depth being etched on thing 5 surface, etching speed and etch pit surface and etch profile。Etch pit until depth desired is formed, and just stops chemical reagent 6 in the supply being etched thing 5 surface, and stop etching process。
Without in mask local etching process, when having the material of different component at the depth direction of etch pit, chemical reagent 6 can be replaced with different chemical compositions or/and stoicheiometry is or/and temperature；The state of chemical reagent 6 can also be changed, it is possible to be liquid, gaseous state or vaporific；The device without mask etch that different materials is made can also be changed, to reach the etch effect of the best。
Chemical reagent 6 can be H2O、H3PO4、HNO3, HF, NaOH, KOH, organic solvent etc. one or more mixture, these reagent do not react with the mask local Etaching device channel material flowing through them。When chemical reagent is water, it is possible to the device without mask etch of the present embodiment is used as rinser。
When etch pit reaches deeper, its horizontal area becomes also increasing, outer tube 1 lower end external diametrical extent is even exceeded near the part being etched thing 5 surface, in order to proceed etch process, thing 5 surface level can be etched by being eclipsed and place upward, or/and make the lower end mouth of pipe of outer tube 1 decline, it is eclipsed the pit surface carved to be more nearly, or/and adopt the Etaching device of local without mask with different size or profile, or/and adopt caliber to have wriggling function to change the Etaching device of local without mask of size, these measures can control chemical composition and will not let out from the outer tube 1 lower end mouth of pipe, can also control at the etch depth being etched on thing 5 surface to a certain extent simultaneously, the pattern on etching speed and etch pit surface。
When the pit quantity needing etching is more, it is possible to several are lined up an array without mask local Etaching device and constitutes a system, to realize etching multiple pit being etched material surface simultaneously。
Generally speaking, the present invention also provides for the following engraving method of local without mask。
A kind of without mask local engraving method, it is characterised in that to comprise the following steps: to utilize feed pipe to provide chemical reagent to the surface being etched thing；Utilize discharging tube by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And by making above-mentioned feed pipe and above-mentioned discharging tube relative movement, regulate etching speed, etch depth and/or etch profile。
In the method, it is preferable that the step of above-mentioned adjustment etching speed, etch depth and/or etch profile includes: by making above-mentioned interior pipe vertically move relative to above-mentioned outer tube, etching speed, etch depth and/or etch profile are regulated。
Additionally, it is preferred that, the method is further comprising the steps of: when above-mentioned be etched thing at the depth direction of etch pit, there is the material of different component, change the composition of above-mentioned chemical reagent, ratio and/or temperature。
Specifically, the engraving method of local without mask of the present invention, its substantially technical process comprise the steps:
1. determine the region to etch；
2. the etched port of Etaching device is directed at the region needing etching；
3. start the systems such as chemomotive force to be etched；
4. etch depth stops etching when reaching requirement。
By above description it can be seen that adopt the Etaching device of local without mask of the present invention, method and system, it is possible to when not needing mask, material surface is etched；And the interior pipe of the Etaching device of local without mask owing to adopting can have relative vertically moving with outer tube, it is possible to control the pattern on the etch depth being etched on thing 5 surface, etching speed and etch pit surface；The method has etching speed faster, and process costs is relatively low。It addition, the Etaching device of local without mask of the present invention can repeatedly use, not producing to pollute to environment, the engraving method of local without mask of the present invention is the engraving method of local without mask of a kind of environmental protection。
[application example]
Example 1: the electric leakage of solar cell front or back is removed
Electric leakage is electrical defects very serious in solar cell, and it can make the current distributing that solar cell produces, and fill factor, curve factor reduces, and then reduces battery conversion efficiency；Electric leakage can also produce hot spot, burns out solar module。Fig. 4 removes solar cell electric leakage schematic diagram without mask local engraving method, and for the sake of simplicity, the solar cell shown in Fig. 4 includes antireflective film 10, launch site 11, base 12 and back electrode 13, and front electrode does not draw。The Etaching device of local without mask adopting the present invention is removed electric leakage method and is not limited to the battery of this structure shown in Fig. 4, this can be used for all solar cells with p-n junction or p-i-n junction or solar cell semi-finished product without mask local Etaching device, the electric leakage of removal include all due to conductive material short circuit electric leakage or/and p-n junction electric leakage or/and p-i-n junction electric leakage。
The Etaching device of local without mask adopting the present invention is removed the electric leakage of solar cell front or back and is included below scheme:
1. determine the region of electric leakage: adopt the technology such as electroluminescent, luminescence generated by light, infrared thermal imagery to determine the position of electric leakage；
2. the etched port without mask local Etaching device is directed at the region needing etching；
3. start the systems such as chemomotive force to be etched；
4. stop etching when etch depth reaches position electric leakage removed。
Example 2: assembly during etching
Fig. 5 is the schematic diagram of the Etaching device of local without mask and the method etch component adopting the present invention, and modular construction includes front surface glass 14, EVA15, solar cell 16, EVA17 and backboard 18。The assembly that the Etaching device of local without mask of the present invention and method are suitable for includes all of assembly being packaged with solar cell, and solar cell therein includes all solar cells with p-n junction or p-i-n junction。The Etaching device of local without mask of the present invention and method can etch any material in solar module and solar cell, and in assembly, the position of etched material includes hot spot, is mingled with, electrically connects the position at places such as coming off。
The Etaching device etch component of local without mask adopting the present invention includes below scheme:
1. determine the position etched in assembly；
2. the etched port without mask local Etaching device is directed at the region needing etching；
3. start the systems such as chemomotive force to be etched；
4. when etch depth reaches to remove when target is removed completely needs to stop etching。
Example 3: solar cell perforation technique
In solar cell technical process, often to use perforation technique, it may be assumed that the solar cell semi-finished product after one or more solar cell techniques are in the direction perforate of vertical silicon plate plane by initial silicon chip or silicon chip, until full through。Such as it is coated with in (EmitterWrapThrough-EWT) solar cell and metallic cover (MetalWrapThrough-MWT) solar cell at emitter stage in technical process, it is necessary to prepare several holes from front surface to rear surface with laser。The Etaching device of local without mask of the present invention and method can be used for including before each processing procedure links of the various solar cells of EWT, MWT solar cell or later perforation technique, through hole from silicon chip, solar cell semifinished or finished goods thickness direction full through。
The processing step that the Etaching device of local without mask adopting the present invention realizes solar cell perforation is as follows:
1. determine, at initial silicon chip or solar cell semi-finished product, the position needing perforation；
2. the etched port without mask local Etaching device is directed at the region needing perforation；
3. start the systems such as chemomotive force to be etched；
4. when after hole is through and reach need pattern after stop etching。
Example 4: solar cell perforate
The existing screen printing crystalline silicon solar cell accounting for market share more than 80%, its efficiency also has the place of very big lifting to be just formed into antapex contact structures, namely good passivating film is had to cover in the major part of the rear surface regions of base, and in other region, i.e. several local areas in dispersed and distributed, base material just forms Ohmic contact with metal electrode。Hole opening technology will be used in these places forming local Ohmic contact, so that the back side of base needs the place forming Ohmic contact with metal exposed, it is not passivated film to cover, then one layer of electrode metal film is directly prepared in this place, afterwards by sintering to form Ohmic contact, namely this solar cell is called back of the body point contact solar cell。
The Etaching device of local without mask of the present invention and method can be used for before each processing procedure link of various solar cells including carrying on the back point contact solar cell or later hole opening technology, and the position of perforate can be the region that solar battery surface be there is a need to be formed pit or groove。
Step required for adopting the Etaching device hole opening technology of local without mask of the present invention is as follows:
1. the position needing perforate is determined at solar cell semi-finished product；
2. the etched port without mask local Etaching device is directed at the region needing perforate；
3. start the systems such as chemomotive force to be etched；
4. when perforate stops etching after reaching the pattern needed。
Example 5: material surface samples
Sometimes, the following certain area in material surface regional area surface or surface needs sampling to carry out certain analysis test, uses the engraving method of local without mask of the present invention can realize the preparation of sample。The engraving method of local without mask can be used for the local sampling of material surface, both may be used for the sampling of skin-material, it is also possible to realize the sampling of material regional area surface layers below material step by step。
It is as follows that the Etaching device of local without mask adopting the present invention carries out material surface sampling process:
1. determine the region, surface of sampling；
2. the etched port without mask local Etaching device is directed at the region needing sampling；
3. start the systems such as chemomotive force to be etched, and collect the composition after after chemical reaction, if multilayer material, it is possible to every layer material is collected respectively；
4. stop etching after sampling amount reaches requirement。
Example 6: solar cell edge current leakage is removed
The position of solar cell edge current leakage is in the side of battery or from the front of lateral distance close (being generally less than 2mm) or/and reverse side, as shown in Figure 6, in order to be effectively prevented reaction product and chemical residue 7 from the etched port of outer tube 1 be etched air gap leakage that thing 5 surface formed to outside outer tube 1, outer tube 1 etched port can adopt shape as shown in Figure 6, but it is not limited to the shape shown in Fig. 6, its objective is when etching, outer tube 1 etched port of minimizing and the gap being etched between thing 5 surface。
The Etaching device of local without mask adopting the present invention is removed solar cell edge current leakage and is comprised the following steps (such as Fig. 6-8):
1. determine the region of edge current leakage；
2. select outer tube etched port with the device without mask etch of slit opening；
2. solar cell piece is embedded slit opening, make interior pipe 2 etched port just to the region (such as Fig. 8) to etch；
3. start the systems such as chemomotive force to be etched；
4. stop etching when etch depth reaches degree of depth electric leakage removed。
Although above by some exemplary embodiments to the Etaching device of local without mask of the present invention, be described in detail without mask local engraving method and without mask local etch system, but the above embodiment is not exhaustive, those skilled in the art can realize variations and modifications within the spirit and scope of the present invention。Therefore, the present invention is not limited to these embodiments, and the scope of the present invention is only as the criterion with appended claims。
Claims (14)
1. one kind without mask local Etaching device, it is characterised in that including:
Feed pipe, it provides chemical reagent to the surface being etched thing；
Discharging tube, its by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；
Wherein, above-mentioned discharging tube and in above-mentioned feed pipe one are interior pipe, and another is outer tube；
Seal member between above-mentioned outer tube and above-mentioned surface to be etched；
The shape of the etched port of above-mentioned outer tube is corresponding with the above-mentioned pattern being etched place being etched thing and/or shape；
And
Connection member, states feed pipe and the relatively-movable mode of above-mentioned discharging tube above, above-mentioned feed pipe and above-mentioned discharging tube is connected；
Wherein, the above-mentioned thing that is etched includes solar cell or solar module, and the inside of above-mentioned discharging tube is negative pressure。
2. the Etaching device of local without mask according to claim 1, it is characterised in that
Described surface includes above-mentioned solar cell or the front of solar module, the back side and/or side。
3. the Etaching device of local without mask according to claim 1 and 2, it is characterised in that
The etched port of above-mentioned outer tube be shaped as groove shapes。
4. the Etaching device of local without mask according to claim 1 and 2, it is characterised in that
Above-mentioned feed pipe and above-mentioned discharging tube, in the way of being sealed the junction of above-mentioned feed pipe and above-mentioned discharging tube, are connected by above-mentioned connection member。
5. the Etaching device of local without mask according to claim 1 and 2, it is characterised in that
Above-mentioned connection member includes corrugated tube, spring members, screwed part or its combination。
6. the Etaching device of local without mask according to claim 1 and 2, it is characterised in that
Above-mentioned chemical reagent includes H2O、H3PO4、HNO3, HF, NaOH, KOH, organic solvent or its mixture。
7. one kind without mask local engraving method, it is characterised in that comprise the following steps:
Feed pipe is utilized to provide chemical reagent to the surface being etched thing；
Utilize discharging tube by above-mentioned chemical reagent with the above-mentioned reacted material of thing that is etched from above-mentioned surface removal；And
By making above-mentioned feed pipe and above-mentioned discharging tube relative movement, regulate etching speed, etch depth and/or etch profile；
In above-mentioned discharging tube and above-mentioned feed pipe one is interior pipe, and another is outer tube；The shape of the etched port of above-mentioned outer tube is corresponding with the above-mentioned pattern being etched place being etched thing and/or shape；Wherein, the above-mentioned thing that is etched includes solar cell or solar module。
8. the engraving method of local without mask according to claim 7, it is characterised in that
Above-mentioned surface includes above-mentioned solar cell or the front of solar module, the back side and/or side。
9. the engraving method of local without mask according to claim 7 or 8, it is characterised in that the step of above-mentioned adjustment etching speed, etch depth and/or etch profile includes:
By making above-mentioned interior pipe vertically move relative to above-mentioned outer tube, regulate etching speed, etch depth and/or etch profile。
10. the engraving method of local without mask according to claim 7 or 8, it is characterised in that
The etched port of above-mentioned outer tube be shaped as groove shapes。
11. the engraving method of local without mask according to claim 7 or 8, it is characterised in that further comprising the steps of:
When above-mentioned be etched thing at the depth direction of etch pit, there is the material of different component, change the composition of above-mentioned chemical reagent, ratio and/or temperature。
12. the engraving method of local without mask according to claim 7 or 8, it is characterised in that
Above-mentioned chemical reagent includes H2O、H3PO4、HNO3, HF, NaOH, KOH, organic solvent or its mixture。
13. one kind without mask local etch system, it is characterised in that including:
Multiple Etaching devices of local without mask according to any one of claim 1-6。
14. the etch system of local without mask according to claim 13, it is characterised in that
Above-mentioned multiple Etaching device of local without mask lines up array。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210025727.6A CN103227234B (en) | 2012-01-31 | 2012-01-31 | The Etaching device of local without mask, method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210025727.6A CN103227234B (en) | 2012-01-31 | 2012-01-31 | The Etaching device of local without mask, method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103227234A CN103227234A (en) | 2013-07-31 |
| CN103227234B true CN103227234B (en) | 2016-06-22 |
Family
ID=48837604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210025727.6A Active CN103227234B (en) | 2012-01-31 | 2012-01-31 | The Etaching device of local without mask, method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103227234B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05217984A (en) * | 1992-02-04 | 1993-08-27 | Mitsubishi Electric Corp | Working device and evaluating device for semiconductor |
| CN101397667A (en) * | 2007-09-26 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Wet etching apparatus and method |
| CN202633359U (en) * | 2012-01-31 | 2012-12-26 | 张陆成 | Maskless local etching apparatus and maskless local etching system |
-
2012
- 2012-01-31 CN CN201210025727.6A patent/CN103227234B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05217984A (en) * | 1992-02-04 | 1993-08-27 | Mitsubishi Electric Corp | Working device and evaluating device for semiconductor |
| CN101397667A (en) * | 2007-09-26 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Wet etching apparatus and method |
| CN202633359U (en) * | 2012-01-31 | 2012-12-26 | 张陆成 | Maskless local etching apparatus and maskless local etching system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103227234A (en) | 2013-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102009011371B4 (en) | A device for etching a substrate, gas supply device for the same and method for etching a substrate using the same | |
| CN104737363B (en) | Method and diffraction optical element for patterned film electrochemical appliance | |
| GB2446838A (en) | Photovoltaic device and manufacturing method | |
| CN101817108A (en) | Method and device for realizing photoelectrochemical micro-etch processing of masked electrode | |
| KR102524214B1 (en) | Thick damage buffer for foil-based metallization of solar cells | |
| JP2009141056A (en) | Method and device for manufacturing solar cell module | |
| CN102854429A (en) | Failure point positioning method for semiconductor power device failure analysis | |
| CN102124572A (en) | Method for producing a solar cell having a two-stage doping | |
| US9899555B2 (en) | Method for producing a rear-side contact system for a silicon thin-layer solar cell | |
| CN103227234B (en) | The Etaching device of local without mask, method and system | |
| CN202633359U (en) | Maskless local etching apparatus and maskless local etching system | |
| CN103258914A (en) | MWT solar battery and manufacturing method thereof | |
| JP2014112600A (en) | Method for manufacturing back-electrode-type solar cell and back-electrode-type solar cell | |
| CN102593257A (en) | Preparation method for double-faced power generation metal wrap through (MWT) solar cell | |
| JP2007505486A (en) | Mask adjustment by reflow | |
| CN108183147A (en) | A kind of preparation method of MWT silicon solar cells | |
| KR20100123338A (en) | Manufacturing method of the solar cell | |
| Gensowski et al. | Selective seed layer patterning of PVD metal stacks by electrochemical screen printing for solar cell applications | |
| CN104521002B (en) | The manufacture method of solaode | |
| CN102915848A (en) | Dye-sensitized solar cell | |
| Gebhardt et al. | Laser structuring of flexible organic solar cells: manufacturing of polymer solar cells in a cost‐effective roll‐to‐roll process | |
| Li et al. | Patterned masking using polymers: insights and developments from silicon photovoltaics | |
| CN109411565A (en) | Solar battery sheet and preparation method thereof, photovoltaic module | |
| CN113488377A (en) | Manufacturing method of semiconductor device | |
| NO20100616A1 (en) | Method and apparatus for removing a defect from a solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |