CN108183147A - A kind of preparation method of MWT silicon solar cells - Google Patents
A kind of preparation method of MWT silicon solar cells Download PDFInfo
- Publication number
- CN108183147A CN108183147A CN201711346984.9A CN201711346984A CN108183147A CN 108183147 A CN108183147 A CN 108183147A CN 201711346984 A CN201711346984 A CN 201711346984A CN 108183147 A CN108183147 A CN 108183147A
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- solar cells
- silicon solar
- mask
- mwt
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000011440 grout Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 235000008216 herbs Nutrition 0.000 claims abstract description 10
- 210000002268 wool Anatomy 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000007711 solidification Methods 0.000 claims abstract description 5
- 230000008023 solidification Effects 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims abstract description 4
- 230000000873 masking effect Effects 0.000 claims abstract description 3
- 238000007641 inkjet printing Methods 0.000 claims description 11
- 238000007650 screen-printing Methods 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000004512 die casting Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims 1
- 239000012774 insulation material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 10
- 239000012634 fragment Substances 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 206010013786 Dry skin Diseases 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a kind of preparation method of MWT silicon solar cells, including：Making herbs into wool：The making herbs into wool on silicon chip forms light trapping surface；Diffusion：Using diffusion source, diffusing, doping forms PN junction on matte；Mask：The mask of etching masking action has been prepared in silicon chip back surface；Etching：Utilize the extra PN junction of chemical liquid removal silicon chip edge and the back side；Remove mask slurry；Remove phosphorosilicate glass；Plated film：Silicon nitride anti-reflection film is plated in silicon chip front surface；Printing：Printed back electrode and front electrode；Sintering；Laser boring：The laser boring on cell piece；Grout：Using conducting medium grout, front gate line and the positive electrode at the back side, last dry solidification is connected.The present invention reduces all fronts fragment rate by the way that laser boring process is put into finishing operation.
Description
Technical field
The present invention relates to solar cell more particularly to a kind of preparation methods of MWT silicon solar cells.
Background technology
At present, crystal silicon solar technology includes heterojunction solar battery (HIT), back electrode contact silicon solar cell
(IBC), emitter circulating break-through silicon solar cell (EWT), buried contaCt solar Cells tilt the evaporated metal contact silicon sun
Energy battery (OECO) and metal piercing winding silicon solar cell (MWT) etc., wherein MWT battery is because of its efficient, shading-area
Small and better appearance characteristics receive more and more attention.
MWT silicon solar cells are that the energy for being collected front by laser drill passes through battery transfer to cell backside,
Achieve the purpose that improve transfer efficiency to reduce shading-area.
The prior art is general to do laser boring using in the first procedure of battery process when preparing MWT solar cells
(patent：CN201410016190.6 laser boring (patent) or after filming process is carried out：CN201310008854.X).Too early
Introducing laser boring process can cause the promotion of all fronts fragment rate, and non-device to hole inner wall is punched after plated film and carries out insulation protection,
So as to show as reverse leakage raising on electrical property.
Invention content
Goal of the invention：To solve the problems of the prior art, the present invention by laser boring process by being put into finishing operation
Reduce all fronts fragment rate.
Technical solution：The preparation method of MWT silicon solar cells of the present invention, including：
(1) making herbs into wool：The making herbs into wool on silicon chip forms light trapping surface；
(2) it spreads：Using diffusion source, diffusing, doping forms PN junction on matte；
(3) mask：The mask of etching masking action has been prepared in silicon chip back surface；
(4) it etches：Utilize the extra PN junction of chemical liquid removal silicon chip edge and the back side；Remove mask slurry；Go dephosphorization
Silica glass；
(5) plated film：Silicon nitride anti-reflection film is plated in silicon chip front surface；
(6) prepared by electrode：Prepare back electrode and positive electrode, back of the body electric field and front gate line；
(7) it is sintered；
(8) laser boring：The laser boring on cell piece；
(9) grout：Using conducting medium grout, front gate line and the positive electrode at the back side, last dry solidification is connected.
By taking P-type wafer as an example, crystal silicon solar batteries can spread N-type layer in front, so as to form PN junction, by the light of PN junction
Electrical effect realizes the opto-electronic conversion of crystal silicon solar batteries.For conventional batteries, electrode is prepared respectively in positive N-type, back side p-type
Electric current export can be realized, wherein front, the back side are respectively the cathode and anode of battery.For MWT battery, by cathode from front
The back side is transferred to, so needing to reserve n-type region at the back side of p-type to form cathode, otherwise positive and negative anodes conducting generates leakage
Electricity.Using the technical solution of mask, the n-type region that diffusing procedure can be protected overleaf to be formed.
In step (3), the circle of the mask diametrically 0.01-10mm, 1-50 μm of thickness, with the hole of follow-up laser boring
Hole is the center of circle.It is circle that circular purpose, which is the back of the body silver cathode subsequently printed, Al-BSF Kong Liu areas, so that the former can be most
Realize that electric current export, the latter can realize the maximum Al-BSF covering in the case of mask insulation and ensure battery under low slurry unit consumption
The transfer efficiency of piece only needs the corrosion of energy protective separation etching procedure chemical liquid about thickness, and generally again 20-30 μm can
To meet the requirements.Mask is prepared using silk-screen printing or ink-jet printing.The mask can be parafilm.
Preferably, the aperture of the laser boring is 100-400 μm, and void shape is the center of circle, rectangular or taper etc..
Preferably, before grout, using the hole inner wall of insulator-coating laser boring.The thickness of coating is without strictly will
It asks, ensures insulating properties.
The insulating materials is paraffin, epoxy resin or polyurethane.
The painting method of the insulating materials is silk-screen printing or inkjet printing.
In step (9), conducting medium is packing type conducting resinl or aluminium paste.He specifically may be used in the packing type conducting resinl
Li Shi SOL570, the viscosity of aluminium paste is 350-450pa.s.
In step (9), grout method is silk-screen printing, inkjet printing or die casting.
Compared with prior art, beneficial effects of the present invention are：
(1) present invention has both the advantages of conventional batteries technology and MWT technologies, and preceding working procedure, which is removed, to spread and etching work
Increase outside process masks between sequence, remaining is usual processing route, and the additional conducting resinl grout of laser boring is used after sintering
Process realizes MWT battery technology.By adjusting laser boring process so that can be held substantially with conventional batteries on fragment rate
Flat, the more existing MWT techniques of fragment rate such as patent CN201410016190.6, CN201310008854.X can decline 0.3%-
0.5%.
(2) by using conducting resinl such as packing type conducting resinl or aluminium paste grout, more conventional silver paste is low in cost.
(3) before grout, the hole inner wall of protection insulation protection laser boring is coated using insulation paste, prevents from causing anti-
To electric leakage, component safety is improved.
Description of the drawings
Fig. 1 is the process flow chart of embodiment 1；
Fig. 2 is the process flow chart of embodiment 2.
Specific embodiment
With reference to specific embodiment, the present invention is furture elucidated.
Embodiment 1
The present embodiment provides a kind of MWT silicon solar cells preparation method, as shown in Figure 1,
(1) silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
(2) making herbs into wool：Making herbs into wool is carried out using conventional chemical cleaning and texturing method, forms light trapping surface；
(3) it spreads：POCl is used on matte3Diffusion source carries out high temperature single side diffusion, forms PN junction；
(4) mask：At silicon chip back surface (hole subsequently punched be the center of circle), diameter 0.01-10mm (such as diameters are prepared
For 1,2,4,8,10mm), the round etch layer (such as parafilm) of 1-50 μm of thickness (such as 25 μm of thickness), preparation method is silk
Wire mark brush or ink-jet printing.
(5) it etches：It is performed etching using chemical solution, removes the extra PN junction of silicon chips periphery and the back side, cleaning is organic to be covered
Film, the phosphorosilicate glass that surface of silicon is formed after removal diffusion.
(6) plated film：Using PECVD device silicon nitride anti-reflection film is prepared in silicon chip front surface.
(7) prepared by electrode：Back electrode and positive electrode, back of the body electric field and front gate line are prepared using the method for silk-screen printing.
(8) it is sintered：It is dried and is sintered in chain-conveyer furnace.
(9) laser boring：The laser opening on cell piece, hole be N × N array, void shape for the center of circle, it is rectangular or
Taper etc..A kind of preferable selection, the aperture of laser boring is at 100-400 μm, and the diameter of mask circle is in 2-4mm, specifically, swashing
The aperture of light punching can be 400 μm, and the diameter of mask circle can be 4mm.
(10) grout：Using conducting resinl grout, front gate line and the positive electrode at the back side is connected.Conducting resinl can use filler
Type conducting resinl (as congratulated Li Shi SOL570), aluminium paste of high viscosity (viscosity 350-450pa.s) etc..Grout method can use silk
The modes such as wire mark brush, inkjet printing, die casting.
(11) dry solidification：Using chain type baking oven, the processing 1-10min dryings under the conditions of 100-200 DEG C of drying temperature is
Curing.
Embodiment 2
The present embodiment provides a kind of MWT silicon solar cells preparation method, as shown in Fig. 2,
(1) silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
(2) making herbs into wool：Making herbs into wool is carried out using conventional chemical cleaning and texturing method, forms light trapping surface；
(3) it spreads：High temperature single side diffusion is carried out using POCl3 diffusions source on matte, forms PN junction；
(4) mask：At silicon chip back surface (hole subsequently punched be the center of circle), diameter 0.01-10mm (such as diameters are prepared
For 1,2,4,8,10mm), the round etch layer (such as parafilm) of 1-50 μm of thickness (such as 25 μm of thickness), preparation method is silk
Wire mark brush or ink-jet printing.
(5) it etches：It is performed etching using chemical solution, removes the extra PN junction of silicon chips periphery and the back side, cleaning is organic to be covered
Film, the phosphorosilicate glass of surface of silicon after removal diffusion.
(6) plated film：Using PECVD device silicon nitride anti-reflection film is prepared in front side of silicon wafer；
(7) prepared by electrode：Back electrode and positive electrode, back of the body electric field and front gate line are prepared using the method for silk-screen printing.
(8) it is sintered：It is dried and is sintered in chain-conveyer furnace.
(9) laser boring：The laser opening on cell piece, hole be N × N array, void shape for the center of circle, it is rectangular or
Taper etc..A kind of preferable selection, the aperture of laser boring is at 100-400 μm, and the diameter of mask circle is in 2-4mm, specifically, swashing
The aperture of light punching can be 100 μm, and the diameter of mask circle can be 2mm.
(10) it coats：Using non-conducting material (insulating materials) coat laser boring inner wall, using insulating materials such as paraffin,
The high molecular materials such as epoxy resin, polyurethane.Silk-screen printing, inkjet printing etc. can be used in painting method.
(11) grout：Using conducting resinl grout, front gate line and the positive electrode at the back side is connected.Conducting resinl can use filler
Type conducting resinl (as congratulated Li Shi SOL570), highly viscous aluminium paste (viscosity 350-450pa.s) etc..Grout method can use silk
The modes such as wire mark brush, inkjet printing, die casting.
(12) dry solidification：Using chain type baking oven, the processing 1-10min dryings under the conditions of 100-200 DEG C of drying temperature is
Curing.
Above example is used for illustrative purposes only rather than limitation of the present invention, the technology people in relation to technical field
Member, without departing from the spirit and scope of the present invention, made various transformation or modification belong to model of the invention
Farmland.
Claims (9)
1. a kind of preparation method of MWT silicon solar cells, which is characterized in that including：
(1) making herbs into wool：The making herbs into wool on silicon chip forms light trapping surface；
(2) it spreads：Using diffusion source, diffusing, doping forms PN junction on matte；
(3) mask：The mask of etching masking action has been prepared in silicon chip back surface；
(4) it etches：Utilize the extra PN junction of chemical liquid removal silicon chip edge and the back side；Remove mask slurry；Remove dephosphorization silicon glass
Glass；
(5) plated film：Silicon nitride anti-reflection film is plated in silicon chip front surface；
(6) prepared by electrode：Prepare back electrode and positive electrode, back of the body electric field and front gate line；
(7) it is sintered；
(8) laser boring：The laser boring on cell piece；
(9) grout：Using conducting medium grout, front gate line and the positive electrode at the back side, last dry solidification is connected.
2. the preparation method of MWT silicon solar cells according to claim 1, which is characterized in that described in step (3)
The circle of mask diametrically 0.01-10mm, 1-50 μm of thickness, using the hole of follow-up laser boring as the center of circle.
3. the preparation method of MWT silicon solar cells according to claim 1, which is characterized in that mask uses screen printing
It is prepared by brush or ink-jet printing.
4. the preparation method of MWT silicon solar cells according to claim 1, which is characterized in that before grout, using insulation
Material coats the hole inner wall of laser boring.
5. the preparation method of MWT silicon solar cells according to claim 4, which is characterized in that insulating materials for paraffin,
Epoxy resin or polyurethane.
6. the preparation method of MWT silicon solar cells according to claim 4, which is characterized in that painting method is silk screen
Printing or inkjet printing.
7. the preparation method of MWT silicon solar cells according to claim 1, which is characterized in that conducting medium is filler
Type conducting resinl or aluminium paste.
8. the preparation method of MWT silicon solar cells according to claim 7, which is characterized in that the packing type is conductive
For glue to congratulate Li Shi SOL570, the viscosity of aluminium paste is 350-450pa.s.
9. the preparation method of MWT silicon solar cells according to claim 1, which is characterized in that grout method is silk screen
Printing, inkjet printing or die casting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711346984.9A CN108183147A (en) | 2017-12-15 | 2017-12-15 | A kind of preparation method of MWT silicon solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711346984.9A CN108183147A (en) | 2017-12-15 | 2017-12-15 | A kind of preparation method of MWT silicon solar cells |
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| Publication Number | Publication Date |
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| CN108183147A true CN108183147A (en) | 2018-06-19 |
Family
ID=62546117
Family Applications (1)
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| CN201711346984.9A Pending CN108183147A (en) | 2017-12-15 | 2017-12-15 | A kind of preparation method of MWT silicon solar cells |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659399A (en) * | 2018-12-29 | 2019-04-19 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of the small exposure mask solar battery of MWT |
| CN109860336A (en) * | 2019-01-31 | 2019-06-07 | 欧贝黎新能源科技股份有限公司 | A kind of preparation method of solar battery |
| CN113814570A (en) * | 2021-01-20 | 2021-12-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Laser marking method of silicon wafer and manufacturing method of heterojunction battery |
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| CN103258915A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | MWT solar battery piece and manufacturing method thereof |
| CN103413858A (en) * | 2013-06-08 | 2013-11-27 | 中山大学 | Preparation method of MWT crystalline silicon solar cell |
| CN103618021A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | MWT battery manufacturing method |
| CN103746040A (en) * | 2014-01-14 | 2014-04-23 | 南京日托光伏科技有限公司 | Low-cost back-contact cell production method suitable for mass production |
| CN106876491A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | A kind of P-type crystal silicon back contact battery structure and preparation method without front gate line |
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| CN102610666A (en) * | 2011-01-20 | 2012-07-25 | 无锡尚德太阳能电力有限公司 | MWT (metal wrap through) back-contact solar cell, preparation method and module thereof |
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| CN103413858A (en) * | 2013-06-08 | 2013-11-27 | 中山大学 | Preparation method of MWT crystalline silicon solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659399A (en) * | 2018-12-29 | 2019-04-19 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of the small exposure mask solar battery of MWT |
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| CN113814570A (en) * | 2021-01-20 | 2021-12-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Laser marking method of silicon wafer and manufacturing method of heterojunction battery |
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Address after: 214028 Xishi Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Jiangsu Rituo Photovoltaic Technology Co., Ltd. Address before: 211800 No. 29 Buyue Road, Pukou Economic Development Zone, Nanjing City, Jiangsu Province Applicant before: Nanjing day care PV Polytron Technologies Inc |
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Application publication date: 20180619 |