CN109860336A - A kind of preparation method of solar battery - Google Patents
A kind of preparation method of solar battery Download PDFInfo
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- CN109860336A CN109860336A CN201910097057.0A CN201910097057A CN109860336A CN 109860336 A CN109860336 A CN 109860336A CN 201910097057 A CN201910097057 A CN 201910097057A CN 109860336 A CN109860336 A CN 109860336A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention provides a kind of preparation methods of solar battery, including first time making herbs into wool, second of making herbs into wool, phosphorus diffusion, exposure mask, etch cleaner, PECVD plated film, electrode preparation, sintering, laser boring, painting insulating layer coating, filling electrocondution slurry, dry solidification.The application increases a making herbs into wool face, and then increase PN junction, the collection of carrier can be improved, improve the transformation efficiency of solar battery by increasing a making herbs into wool process；After laser boring is placed in sintering, fragment rate when laser boring can be reduced, improves the production efficiency of solar battery；Increase the process for applying insulating layer coating in hole inner wall together by before filling electrocondution slurry more, can improve solar battery to avoid reverse leakage and prepare the safety used.
Description
Technical field
The present invention relates to technical field of solar batteries more particularly to a kind of preparation methods of solar battery.
Background technique
Further obvious with greenhouse effects, ecological environment is more and more valued by people.Solar energy industry is as clear
One of clean energy industry, development at full speed at this stage, wherein being most widely used with silion cell, thus its efficiency mentions
Rise the concern for being also constantly subjected to people.
Currently, the way of traditional silicon wafer solar battery is that the side of one piece of silicon semiconductor is doping to P-type semiconductor, separately
Side is doping to N-type semiconductor, will form single special thin layer at the interface of two kinds of semiconductors, that is, forms a PN
Knot, to realize the conversion of solar energy.
But the course of work of silicon wafer solar battery is mainly that Electron absorption luminous energy forms free electron, passes through electrode back pass
Electric current is formed to cathode or is collected, and battery diffusion layer is than relatively thin in traditional silicon wafer solar battery, and forms one
Single PN kink, and sunlight is mixed spectra, therefore, the solar battery that conventional method is prepared will lead to part light cannot be abundant
It utilizes, so that part sunlight is directed through battery and is wasted, to affect the transfer efficiency of solar energy.
It nowadays is that electricity is passed through by the energy that laser drill collects front there are also metal piercing winding solar battery
Pond is transferred to cell backside, achievees the purpose that improve conversion ratio to reduce shading-area.
But prepare general first procedure or the just use before sintering after plated film when metal piercing winding solar battery
Laser boring, the premature laser boring program that introduces can cause the promotion of all fronts fragment rate；Hole inner wall is not carried out after punching
Insulation protection, so that reverse leakage raising is shown as on electrical property, it is dangerous.
Summary of the invention
For overcome it is existing in the prior art how to improve conversion ratio, improve production efficiency, ensure produce and use safety
Problem, the present invention provides a kind of preparation methods of solar battery.
A kind of preparation method of solar battery, comprising:
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, removes the extra PN junction in silicon body periphery and the back side, and cleaning has
Machine exposure mask removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, filling electrocondution slurry: using silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or
Conducting resinl pours into hole；
S11, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
In a preferred embodiment, it when the silicon body is monocrystalline silicon, is etched and is carried out for the first time using laser beam
Making herbs into wool carries out anisotropic etch to silicon body using aqueous slkali, to carry out second of making herbs into wool in silicon body surface face.
In a preferred embodiment, when carrying out second of making herbs into wool to silicon body using aqueous slkali, the aqueous slkali is
NaOH。
In a preferred embodiment, after carrying out second of making herbs into wool to silicon body using aqueous slkali, silicon is removed using HF
Body surface and oil contaminant, and silicon body metallic contaminants from surface is removed using HCl.
In a preferred embodiment, first time making herbs into wool and second of making herbs into wool are successively carried out respectively to the silicon body,
When the silicon body is polysilicon, to carry out first time making herbs into wool using mechanical grinding, use in the step of forming three making herbs into wool faces
Acid solution carries out anisotropic etch to silicon body, to carry out second of making herbs into wool in silicon body surface face.
In a preferred embodiment, when carrying out second of making herbs into wool to silicon body using acid solution, the acid solution is
The mixed liquor of HNO3, HF, the volume ratio of HNO3 and HF is 1:2.7 in mixed liquor.
In a preferred embodiment, exposure mask made from step S4 is the circle of diameter 0.01-10mm.
In a preferred embodiment, matrix type drilling is carried out to silicon body using laser in step S9, formation
Conductive through holes are round, rectangular or taper etc., and at 100-400 μm, the conductive through holes take the diameter of laser boring with exposure mask
The same center.
In a preferred embodiment, there are one will apply on hole inner wall before step S10 fills electrocondution slurry
The step of insulating layer coating.
In a preferred embodiment, the insulating layer uses insulating materials polytetrafluoroethylene (PTFE) or polyimides.
Compared with prior art, the beneficial effects of the present invention are:
(1) the application increases a making herbs into wool face, and then increase PN junction, load can be improved by increasing a making herbs into wool process
The collection for flowing son, improves the transformation efficiency of solar battery；
(2) after by the way that laser boring is placed in sintering, fragment rate when laser boring can be reduced, improves solar-electricity
The production efficiency in pond；
(3) increase the process for applying insulating layer coating in hole inner wall together by before filling electrocondution slurry more, can keep away
Exempt from reverse leakage, improves the safety of solar battery.
Specific embodiment
With reference to embodiments, the present invention will be described in further detail.It should be appreciated that specific reality described herein
Example is applied only to explain the present invention, is not intended to limit the present invention.
Embodiment 1:
A kind of one preferred embodiment of preparation method of solar battery, takes monocrystalline silicon to prepare solar battery as matrix,
Preparation method includes:
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, removes the extra PN junction in silicon body periphery and the back side, and cleaning has
Machine exposure mask removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, filling electrocondution slurry: using silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or
Conducting resinl pours into hole；
S11, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
In the present embodiment, the production of flannelette is the anisotropic etch using silicon, forms dense distribution in silicon chip surface
Four sides side's cone (also referred to as inverted pyramid), so that incident light is carried out multiple reflections and refraction on surface, increase the absorption of light, thus
It can be improved the transfer efficiency of battery.
Further, in the present embodiment, first time making herbs into wool is carried out using laser beam etching in S1, in silicon body front surface shape
At a making herbs into wool face.
Further, in the present embodiment, anisotropic etch is carried out to silicon body come the using sodium hydroxide solution in S2
Secondary making herbs into wool forms two making herbs into wool faces in silicon body back surface, increases the uniformity of surface inverted pyramid.
Further, in the present embodiment, exposure mask made from S4 is the circle of diameter 0.01-10mm.
Further, in the present embodiment, after carrying out second of making herbs into wool to silicon wafer using aqueous slkali, HF can also be used
Silicon chip surface greasy dirt is removed, and silicon chip surface metal impurities are removed using HCl.
Further, due to foring three making herbs into wool faces, if incident light angle is suitable, incident light is through big etch pit and small
After etch pit, light path can be extended by 4 times or more, to increase the absorption to photon, and had more
Photon generates photo-generated carrier near p-n junction, to increase the collection probability of photo-generated carrier.
The equipment that production PN junction usually utilizes is tubular diffusion furnace, generally uses phosphorus oxychloride liquid source as diffusion source.P
Type silicon wafer is placed in the quartz boat of tubular diffusion furnace, brings phosphorus oxychloride into stone using nitrogen under 850 to 900 celsius temperatures
Ying Zhou is reacted by phosphorus oxychloride and silicon wafer, obtains phosphorus atoms.By certain time, phosphorus atoms enter the table of silicon wafer from surrounding
Surface layer, and spread by the gap between silicon atom to silicon wafer internal penetration, form PN junction.
In the present embodiment, PECVD, that is, plasma reinforced chemical vapour deposition in S6, the surface where three PN junctions all
One layer of aluminium oxide is first plated, then plates one layer of silicon nitride, to make antireflective coating.
In the present embodiment, matrix type drilling is carried out to silicon body using laser in S9, the conductive through holes of formation be it is round,
Rectangular or taper etc., for the diameter of laser boring at 100-400 μm, the conductive through holes and exposure mask take the same center.
Embodiment 2:
A kind of one preferred embodiment of preparation method of solar battery, takes monocrystalline silicon to prepare solar battery as matrix,
Preparation method includes:
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, removes the extra PN junction in silicon body periphery and the back side, and cleaning has
Machine exposure mask removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, it applies insulating layer coating: insulating layer coating will be applied on hole inner wall made from S9.
S11, filling electrocondution slurry: using silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or
Conducting resinl pours into hole；
S12, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
Further, in the present embodiment, first time making herbs into wool is carried out using laser beam etching in S1, in silicon body front surface shape
At a making herbs into wool face.
Further, in the present embodiment, anisotropic etch is carried out to silicon body come the using sodium hydroxide solution in S2
Secondary making herbs into wool forms two making herbs into wool faces in silicon body back surface, increases the uniformity of surface inverted pyramid.
Further, in the present embodiment, exposure mask made from S4 is the circle of diameter 0.01-10mm.
Further, in the present embodiment, after carrying out second of making herbs into wool to silicon wafer using aqueous slkali, HF can also be used
Silicon chip surface greasy dirt is removed, and silicon chip surface metal impurities are removed using HCl.
In the present embodiment, matrix type drilling is carried out to silicon body using laser in S9, the conductive through holes of formation be it is round,
Rectangular or taper etc., for the diameter of laser boring at 100-400 μm, the conductive through holes and exposure mask take the same center.
In the present embodiment, insulating layer described in S10 uses insulating materials polytetrafluoroethylene (PTFE).
Embodiment 3:
A kind of one preferred embodiment of preparation method of solar battery, takes polysilicon to prepare solar battery as matrix,
Preparation method includes:
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, removes the extra PN junction in silicon body periphery and the back side, and cleaning has
Machine exposure mask removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, filling electrocondution slurry: using silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or
Conducting resinl pours into hole；
S11, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
In the present embodiment, the production of flannelette is the anisotropic etch using silicon, forms dense distribution in silicon chip surface
Four sides side's cone (also referred to as inverted pyramid), so that incident light is carried out multiple reflections and refraction on surface, increase the absorption of light, thus
It can be improved the transfer efficiency of battery.
Further, in the present embodiment, first time making herbs into wool is carried out using mechanical grinding in S1, is formed in silicon body front surface
One making herbs into wool face.
Further, in the present embodiment, used in S2 volume ratio for HNO3, HF mixed solution of 1:2.5 to silicon body into
Row anisotropic etch carrys out second of making herbs into wool, forms two making herbs into wool faces in silicon body back surface, increases the uniform of surface inverted pyramid
Property.
Further, in the present embodiment, exposure mask made from S4 is the circle of diameter 0.01-10mm.
Further, due to foring three making herbs into wool faces, if incident light angle is suitable, incident light is through big etch pit and small
After etch pit, light path can be extended by 4 times or more, to increase the absorption to photon, and had more
Photon generates photo-generated carrier near p-n junction, to increase the collection probability of photo-generated carrier.
The equipment that production PN junction usually utilizes is tubular diffusion furnace, generally uses phosphorus oxychloride liquid source as diffusion source.P
Type silicon wafer is placed in the quartz boat of tubular diffusion furnace, brings phosphorus oxychloride into stone using nitrogen under 850 to 900 celsius temperatures
Ying Zhou is reacted by phosphorus oxychloride and silicon wafer, obtains phosphorus atoms.By certain time, phosphorus atoms enter the table of silicon wafer from surrounding
Surface layer, and spread by the gap between silicon atom to silicon wafer internal penetration, form PN junction.
In the present embodiment, PECVD, that is, plasma reinforced chemical vapour deposition in S6, the surface where three PN junctions all
One layer of aluminium oxide is first plated, then plates one layer of silicon nitride, to make antireflective coating.
In the present embodiment, matrix type drilling is carried out to silicon body using laser in S9, the conductive through holes of formation be it is round,
Rectangular or taper etc., for the diameter of laser boring at 100-400 μm, the conductive through holes and exposure mask take the same center.
Embodiment 4:
A kind of one preferred embodiment of preparation method of solar battery, takes polysilicon to prepare solar battery as matrix,
Preparation method includes:
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, removes the extra PN junction in silicon body periphery and the back side, and cleaning has
Machine exposure mask removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, it applies insulating layer coating: insulating layer coating will be applied on hole inner wall made from S9.
S11, filling electrocondution slurry: using silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or
Conducting resinl pours into hole；
S12, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
In the present embodiment, first time making herbs into wool is carried out using mechanical grinding in S1, forms a making herbs into wool in silicon body front surface
Face.
Further, in the present embodiment, used in S2 volume ratio for HNO3, HF mixed solution of 1:2.5 to silicon body into
Row anisotropic etch carrys out second of making herbs into wool, forms two making herbs into wool faces in silicon body back surface, increases the uniform of surface inverted pyramid
Property.
Further, in the present embodiment, exposure mask made from S4 is the circle of diameter 0.01-10mm.
In the present embodiment, matrix type drilling is carried out to silicon body using laser in S9, the conductive through holes of formation be it is round,
Rectangular or taper etc., for the diameter of laser boring at 100-400 μm, the conductive through holes and exposure mask take the same center.
In the present embodiment, insulating layer described in S10 uses insulating materials polyimides.
The application increases a making herbs into wool face, and then increase PN junction, carrier can be improved by increasing a making herbs into wool process
Collection, improve the transformation efficiency of solar battery；After laser boring is placed in sintering, when can reduce laser boring
Fragment rate, improve the production efficiency of solar battery；Increased together by before filling electrocondution slurry in hole inner wall more
The process for applying insulating layer coating, can improve the safety of solar battery to avoid reverse leakage.
The preferred embodiment of the present invention has shown and described in above description, as previously described, it should be understood that the present invention is not office
Be limited to form disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations, modification and
Environment, and can be changed within that scope of the inventive concept describe herein by the above teachings or related fields of technology or knowledge
It is dynamic.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be appended by the present invention
In scope of protection of the claims.
Claims (10)
1. a kind of preparation method of solar battery characterized by comprising
S1, first time making herbs into wool: first time making herbs into wool is carried out in silicon body front surface, forms a making herbs into wool face；
S2, second of making herbs into wool: second of making herbs into wool is carried out in silicon body back surface, forms two making herbs into wool faces；
S3, phosphorus diffusion: use phosphorus oxychloride liquid source as diffusion source, diffusing, doping forms PN junction on flannelette；
S4, exposure mask: the exposure mask of etching masking action has been prepared in silicon body back surface；
S5, etch cleaner: being performed etching using chemical solution, is removed the extra PN junction in silicon body periphery and the back side, is cleaned organic covers
Film removes exposure mask slurry, the phosphorosilicate glass that surface of silicon is formed after removal diffusion；
S6, PECVD plated film: first plating one layer of aluminium oxide in silicon body front surface, then plate one layer of silicon nitride, forms antireflective coating；
S7, electrode preparation: upper/lower electrode is made on the surface of silicon body；
S8, sintering: silicon body is sent into sintering furnace sintering；
S9, laser boring: matrix type drilling is carried out to silicon body using laser, forms conductive through holes；
S10, filling electrocondution slurry: use silk-screen printing or the modes such as inkjet printing or die casting by electrocondution slurry or conduction
Glue pours into hole；
S11, dry solidification: constant temperature oven is used, sets drying temperature as 100-200 DEG C, drying time 10 minutes.
2. a kind of preparation method of solar battery according to claim 1, it is characterised in that: when the silicon body is monocrystalline
It when silicon, is etched using laser beam and carries out first time making herbs into wool, anisotropic etch is carried out to silicon body using aqueous slkali, in silicon body surface
Face carries out second of making herbs into wool.
3. a kind of preparation method of solar battery according to claim 2, it is characterised in that: using aqueous slkali to silicon body
When carrying out second of making herbs into wool, the aqueous slkali is NaOH.
4. a kind of preparation method of solar battery according to claim 3, it is characterised in that: using aqueous slkali to silicon body
After carrying out second of making herbs into wool, silicon body surface and oil contaminant is removed using HF, and silicon body metallic contaminants from surface is removed using HCl.
5. a kind of preparation method of solar battery according to claim 1, it is characterised in that: to the silicon body respectively according to
Secondary progress first time making herbs into wool and second of making herbs into wool, when the silicon body is polysilicon, are adopted in the step of three making herbs into wool faces of formation
First time making herbs into wool is carried out with mechanical grinding, anisotropic etch is carried out to silicon body using acid solution, to carry out the in silicon body surface face
Secondary making herbs into wool.
6. a kind of preparation method of solar battery according to claim 5, it is characterised in that: using acid solution to silicon body
When carrying out second of making herbs into wool, the acid solution is HNO3, HF mixed liquor, the volume ratio of HNO3 and HF is 1:2.7 in mixed liquor.
7. a kind of preparation method of solar battery according to claim 1, it is characterised in that: exposure mask made from step S4
For the circle of diameter 0.01-10mm.
8. a kind of preparation method of solar battery according to claim 1, it is characterised in that: use laser in step S9
Device carries out matrix type drilling to silicon body, and the conductive through holes of formation are round, rectangular or taper etc., and the diameter of laser boring exists
100-400 μm, the conductive through holes and exposure mask take the same center.
9. a kind of preparation method of solar battery according to claim 1, it is characterised in that: step S10 filling is conductive
The step of before slurry there are one by insulating layer coating is applied on hole inner wall.
10. a kind of preparation method of solar battery according to claim 9, it is characterised in that: the insulating layer uses
Insulating materials polytetrafluoroethylene (PTFE) or polyimides.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115020538A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | P-type IBC single crystal solar cell and preparation method thereof |
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| CN102956730A (en) * | 2011-08-29 | 2013-03-06 | 比亚迪股份有限公司 | Solar cell back sheet, preparation method thereof and solar cell |
| CN107833931A (en) * | 2017-11-02 | 2018-03-23 | 晶科能源有限公司 | Preparation method of solar battery |
| CN108183147A (en) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | A kind of preparation method of MWT silicon solar cells |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202111105U (en) * | 2011-07-15 | 2012-01-11 | 肖柏愚 | Novel solar battery structure adopting capacitor structure |
| CN102956730A (en) * | 2011-08-29 | 2013-03-06 | 比亚迪股份有限公司 | Solar cell back sheet, preparation method thereof and solar cell |
| CN107833931A (en) * | 2017-11-02 | 2018-03-23 | 晶科能源有限公司 | Preparation method of solar battery |
| CN108183147A (en) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | A kind of preparation method of MWT silicon solar cells |
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| CN115020538A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | P-type IBC single crystal solar cell and preparation method thereof |
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Application publication date: 20190607 |