CN105304758B - A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode - Google Patents
A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode Download PDFInfo
- Publication number
- CN105304758B CN105304758B CN201510728444.1A CN201510728444A CN105304758B CN 105304758 B CN105304758 B CN 105304758B CN 201510728444 A CN201510728444 A CN 201510728444A CN 105304758 B CN105304758 B CN 105304758B
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- Prior art keywords
- hole
- mask
- photovoltaic cell
- back contacts
- perforation electrode
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000005611 electricity Effects 0.000 title claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 238000004080 punching Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000012212 insulator Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of methods leaked electricity at reduction back contacts photovoltaic cell perforation electrode, the cell piece with through-hole is obtained after first passing around cleaning, punching, making herbs into wool, diffusion, it is characterized in that, after being laid with one layer of insulation mask at the through-hole inner surface and cell backside hole.The present invention is easy to operate, is not necessarily to special laser insulator arrangement, and protection mask, the p n knots on effective protection silicon chip back side hole periphery and the p n knots of hole inner wall are formed with lower cost.
Description
Technical field
The present invention relates to a kind of methods leaked electricity at reduction back contacts photovoltaic cell perforation electrode, belong to photovoltaic cell manufacture
Field.
Background technology
MWT and EWT batteries are to be transferred to the electronics that photovoltaic cell front is collected by the perforation electrode made in through-hole
Cell backside, therefore it is not necessarily to make main gate line in battery front side, reduces the area that battery front side is blocked and improves battery effect
Rate.
In practical large-scale production process, photo-generated carrier is possible to when passing through perforation electrode in hole MWT and EWT batteries
There is a phenomenon where leak electricity at hole.Common technical matters use Double side diffusion, laser insulation periphery and hole method, come
The phenomenon that preventing above-mentioned electric leakage.But these techniques need additional laser equipment and Double side diffusion technique, of high cost, production capacity is low,
It is not appropriate for large-scale commercial production.
Invention content
Goal of the invention：The present invention proposes a kind of method for reducing and leaking electricity at back contacts photovoltaic cell perforation electrode, provides low
The perforation electrode earth leakage protective of cost.
Technical solution：The technical solution adopted by the present invention is that a kind of reduce is leaked electricity at back contacts photovoltaic cell perforation electrode
Method obtains the cell piece with through-hole, which is characterized in that in the through-hole after first passing around cleaning, punching, making herbs into wool, diffusion
After being laid with one layer of insulation mask at inner surface and cell backside hole.
Preferably, the insulation mask is paraffin or ink.It is exhausted using one layer of silk screen printing method for producing in the through-hole
Edge mask.In the through-hole one layer of insulation mask is made using ink-jet printing.
Advantageous effect：The present invention is easy to operate, is not necessarily to special laser insulator arrangement, and forming protection with lower cost covers
Film, the p-n junction on effective protection silicon chip back side hole periphery (within the scope of mask) and the p-n junction of hole inner wall.
Description of the drawings
Fig. 1 is cell piece structural schematic diagram when protection mask is full of through-hole；
Cell piece structural schematic diagram when Fig. 2 is protection mask underfill through-hole.
1- substrates, 2- protect mask, 3- diffusion layers.
Specific implementation mode
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after having read the present invention, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
Embodiment 1：
The present embodiment includes following technological process：
1, the preparation of photovoltaic cell
Silicon chip passes through cleaning successively, forms cell piece.
2, it punches
Due to the structure of MWT, multiple through-holes are needed to form on cell piece thickness direction.There are many existing laser type,
Generally use 1064nm Nd：YAG laser is punched.Through-hole aperture is 100-500um, and every piece of cell piece makes a call to 25 through-holes.
3, making herbs into wool
The main purpose of making herbs into wool is to reduce the positive reflectivity of cell piece, and most sunlight can be inhaled by cell piece
It receives.For Monocrystalline silicon cell piece, making herbs into wool process uses alkaline etching, this caustic corrosion liquid to have the property of anisotropic etch,
The uniform Pyramid of pattern can be made.And for polycrystalline silicon battery plate, due to the influence of crystal orientation, generally use acid corrosion
Method, acid corrosion are typically all isotropic etch.
4, it spreads
Diffusion is to prepare the core procedure of photovoltaic cell, and pn-junction is formed on substrate 1 by diffusion technique.MWT electricity at present
Pond is spread usually using liquid source, uses POCl3As phosphorus source, BBr3As boron source, the square resistance on its higher surface of diffusion concentration
It will be smaller.
5, through-hole protection mask is prepared
As shown in Figure 1, protect mask, protection mask to be full of through-hole using ink-jet printing or silk screen printing method for producing,
And also form protection mask covering on the hole periphery of silicon chip back side.Certainly, protection mask can not also be full of through-hole, such as Fig. 2
Shown, protection mask covers through-hole inner surface and silicon chip back side hole periphery.
During subsequent etching removes phosphorosilicate glass (PSG), etching liquid level is usually less than silicon chip, so protection mask can be with
The p-n junction on effective protection silicon chip back side hole periphery (within the scope of mask) and the p-n junction of hole inner wall, protection mask are paraffin
Or ink.
6, PSG is removed
In diffusion process, phosphorus source reacts with oxygen to form phosphorous oxide, and phosphorous oxide can be deposited on silicon chip surface.Oxidation
Phosphorus generates silica and phosphorus atoms with pasc reaction again.Thus one layer of titanium dioxide containing P elements is formed on cell piece surface
Silicon, referred to as phosphorosilicate glass (PSG).
PSG is removed usually using hydrofluoric acid, it is particularly important because hydrofluoric acid has weaker acidity and very strong corrosivity
To be it can dissolve silica.PSG can be removed using this characteristic of hydrofluoric acid by cleaning etching process.
7, protection mask is washed
What usually protection mask was selected is acidproof and is soluble in lye or the material of other solvents, so follow-up cleaning is logical
Often lye or other solvent materials (such as butyl) is selected to carry out cleaning protection mask.
8, coated with antireflection layer and passivation
People make one layer of antireflective coating in order to improve the efficiency of battery, in cell piece front, to reduce the anti-of incident light
It penetrates, increases the absorption of light, to increase the quantity of photo-generated carrier.It is heavy usually using low temperature (250-450 degrees Celsius) PECVD
Product silicon nitride film.Meanwhile the surface state in crystal silicon photovoltaic cell leads to the compound of minority carrier, so as to cause battery efficiency
Reduction.Surface state is sunk in PECVD caused by the defects of crystalline silicon especially unsaturated dangling bonds of some silicon atoms
During product silicon nitride, reaction product hydrogen atom can play silicon chip the effect of surface passivation and body passivation.
9, printing, sintering and testing, sorting
The anode and cathode of MWT battery are all located at cell backside.The mode of generally use silk-screen printing in actual production will
Positive thin grid line, positive and negative electrode are printed onto battery surface, and electrode print while realizes prepared by perforation electrode.It is few to reduce simultaneously
The compound probability in the number carrier back side, improves battery efficiency, and cell backside silk-screen printing Al-BSF is finally sintering, test, divides
Choosing.
The present embodiment can also be used for the manufacture of EWT batteries.
Claims (4)
1. a kind of reducing the method leaked electricity at back contacts photovoltaic cell perforation electrode, cleaning, punching, making herbs into wool, diffusion are first passed around
The cell piece with through-hole is obtained afterwards, which is characterized in that one layer is laid at the through-hole inner surface and cell backside hole absolutely
Edge mask, the insulation mask are materials that is acidproof and being soluble in lye；Then phosphorosilicate glass is removed, then falls insulation with caustic dip
Mask.
2. according to claim 1 reduce the method leaked electricity at back contacts photovoltaic cell perforation electrode, which is characterized in that institute
It is paraffin or ink to state insulation mask.
3. according to claim 1 reduce the method leaked electricity at back contacts photovoltaic cell perforation electrode, which is characterized in that
One layer of insulation mask of silk screen printing method for producing is used in the through-hole.
4. according to claim 1 reduce the method leaked electricity at back contacts photovoltaic cell perforation electrode, which is characterized in that
In the through-hole one layer of insulation mask is made using ink-jet printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728444.1A CN105304758B (en) | 2015-10-30 | 2015-10-30 | A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728444.1A CN105304758B (en) | 2015-10-30 | 2015-10-30 | A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105304758A CN105304758A (en) | 2016-02-03 |
| CN105304758B true CN105304758B (en) | 2018-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510728444.1A Active CN105304758B (en) | 2015-10-30 | 2015-10-30 | A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode |
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| CN (1) | CN105304758B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198874A (en) * | 2017-12-28 | 2018-06-22 | 南京日托光伏科技股份有限公司 | A kind of processing method of MWT battery silk-screen printing defective products |
| CN109768120A (en) * | 2018-12-29 | 2019-05-17 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of the MWT without exposure mask solar battery |
| CN117174776B (en) * | 2023-11-02 | 2024-03-22 | 金阳(泉州)新能源科技有限公司 | Back contact battery and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102800740B (en) * | 2011-05-27 | 2014-12-31 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of back contact crystalline silicon solar cell |
| CN102800741B (en) * | 2011-05-27 | 2015-04-15 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar battery piece |
| CN102694069B (en) * | 2012-05-27 | 2015-05-20 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N-type double-sided back-contact crystalline silicon solar battery |
| CN103746040A (en) * | 2014-01-14 | 2014-04-23 | 南京日托光伏科技有限公司 | Low-cost back-contact cell production method suitable for mass production |
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| CN105304758A (en) | 2016-02-03 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: 214028 Xishi Road, Xinwu District, Nanjing City, Jiangsu Province, 20 Patentee after: Jiangsu Rituo Photovoltaic Technology Co., Ltd. Address before: No. 18 Buyue Road, Qiaolin Street, Pukou District, Nanjing City, Jiangsu Province, 210000 Patentee before: Nanjing Rituo Photovoltaic Technology Co., Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190325 Address after: No. 12 Xinhua Road, Xinhua District, Wuxi City, Jiangsu Province, 214028 Patentee after: Wuxi Ritong Photovoltaic Technology Co., Ltd. Address before: 214028 Xishi Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu Rituo Photovoltaic Technology Co., Ltd. |