CN202633359U - Maskless local etching apparatus and maskless local etching system - Google Patents
Maskless local etching apparatus and maskless local etching system Download PDFInfo
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- CN202633359U CN202633359U CN2012200322514U CN201220032251U CN202633359U CN 202633359 U CN202633359 U CN 202633359U CN 2012200322514 U CN2012200322514 U CN 2012200322514U CN 201220032251 U CN201220032251 U CN 201220032251U CN 202633359 U CN202633359 U CN 202633359U
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Abstract
The utility model provides a maskless local etching apparatus and a maskless local etching system. The maskless local etching apparatus comprises a feed pipe that provides chemical reagents to the surface of the to-be-etched object, and a drain pipe that removes the substance generated by reaction of the chemical reagent mentioned above with the to-be-etched object from the surface, wherein one of the drain pipe and the feed pipe is an inner pipe while the other is an outer pipe; and the shape of the etching port of the outer pipe is matched to the feature and/or shape of the to-be-etched portion of the to-be-etched object.
Description
Technical field
The utility model belongs to technical field of solar cells, is specifically related to not have mask local Etaching device and no mask local etch system.
Background technology
Local etching (being called local corrosion or local etching again) is a method of utilizing chemistry or physics; Some or more than one specific regions at material surface; One or more layers of chemical composition or physical property material different are removed; Make this material form specific space or/and material structure, so that be formed with the device of particular optical performance, electric property and/or photoelectric properties.Existing local etching technique mainly contains several kinds.
A. photoetching
Photoetching is a kind of chemical etching that mask is arranged; It is to be photoresist at material surface covering layer protecting film earlier; Then with the certain zone on this diaphragm of rayed; The diaphragm of irradiated area is decomposed, or the diaphragm beyond the irradiated area is decomposed, the surfacing that uses chemical reagent that diaphragm decomposition region or the zone that is not decomposed are exposed then etches away.The advantage of this method mainly is: the live width of the etch pit that etching obtains can be very little, can reach 30 nanometers; Etching is also very little to the damage of remaining material.But the photoresist that the fatal weakness one of photoetching is to use is big for environment pollution; The 2nd, the cost of photoetching process is higher.
B. plasma etching
Plasma etching is in placement is etched the cavity of material, to feed one or more working gass, under electric field action, produces plasma, and then this plasma bombardment material surface need etched surface, up to reaching certain etch depth.Do not need etched material surface zone to be covered, to reach protective effect by mask plate.The advantage of plasma etching is that mask plate can reuse, but weak point is: waste gas such as the fluoride of discharging after the etching are generally more hard to manage, and this waste gas is also bigger to the pollution of environment, also have, and etched speed is also slower.
C. el
El is to need etched zone with electron beam direct bombardment material surface, makes this zone certain bowl configurations occur.The live width that this method advantage is an etch structures is minimum, even can reach 10 nanometers, but this method process speed is very slow, apparatus expensive, and cost is very high.
D. laser-induced thermal etching
Under the situation less demanding to the etching live width, promptly live width can be greater than 5 microns, and the device etch process that has can adopt the laser-induced thermal etching method.Laser-induced thermal etching is the laser that adopts high-energy-density; The irradiation material surface needs etched zone; This regional surfacing stands to be heated, to melt, to vaporize, to form processes such as physics even the chemistry of a series of complicacies such as plasma, volatilization, sputter, finally forms the pit of definite shape.The advantage of this method is not need mask, and etching speed is very fast, but its shortcoming is after the etching material surface to be had damage, and the affected layer degree of depth generally reaches more than 10 microns.After the laser-induced thermal etching, also to carry out follow-up chemistry or physical treatment, to eliminate these damages to the zone of its damage.
Summary of the invention
The subject matter of above traditional engraving method is: 1. photoetching technique needs photoresist, and this photoresist environmental pollution is bigger, and cost is higher; 2. plasma etching also needs mask, and the waste gas environmental pollutions such as fluoride that produced are bigger; 3. the el process speed is very slow, costs an arm and a leg; 4. laser-induced thermal etching is very big to being etched material damage.
To the existing problem of traditional engraving method, the utility model proposes a kind of no mask local Etaching device, no mask local engraving method and does not have mask local etch system, device, method and system below specifically providing.
A kind of no mask local Etaching device comprises:
Feed pipe, it provides chemical reagent to the surface that is etched thing; And
Discharging tube, its with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal;
Wherein, one in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube, and the shape of the etched port of above-mentioned outer tube is corresponding with above-mentioned pattern that is etched the place and/or the shape that is etched thing.
This device also comprises link, and it is connected above-mentioned feed pipe with above-mentioned feed pipe and the relatively-movable mode of above-mentioned discharging tube with above-mentioned discharging tube.
The above-mentioned thing that is etched comprises solar cell or solar module, and above-mentioned surface comprises front, the back side and/or the side of above-mentioned solar cell or solar module.
At above-mentioned outer tube and the above-mentioned seal member of wanting between the etched surface.
The etched port of above-mentioned outer tube be shaped as groove shapes.
The mode that above-mentioned link seals with the junction with above-mentioned feed pipe and above-mentioned discharging tube, just above-mentioned feed pipe is connected with above-mentioned discharging tube.
Above-mentioned link comprises bellows, spring members, screwed part or its combination.
The inside of above-mentioned discharging tube is negative pressure.
A kind of no mask local etch system comprises above-mentioned each described no mask local Etaching device.
Above-mentioned chemical reagent comprises H
2O, H
3PO
4, HNO
3, HF, NaOH, KOH, organic solvent or its mixture.
A kind of no mask local engraving method may further comprise the steps:
Utilize feed pipe chemical reagent to be provided to the surface that is etched thing;
Utilize discharging tube with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal; And
Through above-mentioned feed pipe and above-mentioned discharging tube are relatively moved, regulate etching speed, etch depth and/or etch profile.
The above-mentioned thing that is etched comprises solar cell or solar module, and above-mentioned surface comprises front, the back side and/or the side of above-mentioned solar cell or solar module.
One in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube.
The step of above-mentioned adjusting etching speed, etch depth and/or etch profile comprises:
Through above-mentioned interior pipe is being vertically moved with respect to above-mentioned outer tube, regulate etching speed, etch depth and/or etch profile.
The shape of the etched port of above-mentioned outer tube is corresponding with the pattern that is etched the place and/or the shape of the above-mentioned thing that is corroded.
The etched port of above-mentioned outer tube be shaped as groove shapes.
The described no mask local engraving method of above-mentioned each, further comprising the steps of:
Be etched under thing has different component at the depth direction of etch pit the situation of material above-mentioned, change composition, ratio and/or the temperature of above-mentioned chemical reagent.
Above-mentioned chemical reagent comprises H
2O, H
3PO
4, HNO
3, HF, NaOH, KOH, organic solvent or its mixture.
A plurality of each described no mask local Etaching devices.
Above-mentioned a plurality of no mask local Etaching device is lined up array.
Feed pipe, it provides chemical reagent to the surface that is etched thing; And discharging tube, its with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal;
Wherein, one in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube, and the shape of the etched port of above-mentioned outer tube is corresponding with above-mentioned pattern that is etched the place and/or the shape that is etched thing.
This device also comprises link, and it is connected above-mentioned feed pipe with above-mentioned feed pipe and the relatively-movable mode of above-mentioned discharging tube with above-mentioned discharging tube.
The above-mentioned thing that is etched comprises solar cell or solar module, and above-mentioned surface comprises front, the back side and/or the side of above-mentioned solar cell or solar module.
At above-mentioned outer tube and the above-mentioned seal member of wanting between the etched surface.
The etched port of above-mentioned outer tube be shaped as groove shapes.
The mode that above-mentioned link seals with the junction with above-mentioned feed pipe and above-mentioned discharging tube, just above-mentioned feed pipe is connected with above-mentioned discharging tube.
Above-mentioned link comprises bellows, spring members, screwed part or its combination.
The inside of above-mentioned discharging tube is negative pressure.
A kind of no mask local etch system comprises:
A plurality of each described no mask local Etaching devices.
Above-mentioned a plurality of no mask local Etaching device is lined up array.
The no mask local Etaching device of the utility model, method and system; Be need not be under the situation that is etched the material surface mask film covering; Just can make the original position material and the external chemical substance generation chemical reaction of the specific region of this material surface; The zone that is consumed of material forms pit in position, to reach etched purpose; This material surface do not need etched zone, external chemical substance does not contact with machined material, thereby the chemical etching reaction does not just take place yet.
Description of drawings
Fig. 1 is the stereoscopic figure of no mask local Etaching device of an embodiment of the utility model.
Fig. 2 is the longitudinal profile perspective view of the no mask local Etaching device of present embodiment.
Fig. 3 is the fundamental diagram that utilizes the no mask local Etaching device etching material surface of present embodiment.
Fig. 4 utilizes the no mask local Etaching device of present embodiment to remove the sketch map of solar cell electric leakage.
Fig. 5 is the sketch map that utilizes the no mask local Etaching device etch component of present embodiment.
Fig. 6 is the stereoscopic figure of variation of the no mask local Etaching device of the utility model.
Fig. 7 utilizes the no mask local Etaching device of this variation to carry out the etched decomposing schematic representation in edge.
Fig. 8 utilizes the no mask local Etaching device of this variation to carry out the etched sketch map in edge.
Label declaration:
1 outer tube; Pipe in 2; 3 links; 4 outer tube external connection end; 5 are etched thing; 6 chemical reagent; 7 reaction products and chemical residue; 8 gas leakages; 9 mixtures; 10 antireflective films; 11 emitter regions; 12 bases; 13 back electrodes; 14 front surface glass; 15EVA; 16 solar cells; 17EVA; 18 backboards.
Embodiment
Below, with reference to the embodiment of accompanying drawing detailed description the utility model.In addition, in following explanation, what the length of the various piece in the accompanying drawing, size, thin and thick, size, ratio etc. maybe be with reality is different.
The no mask local Etaching device of present embodiment comprises: feed pipe, and it provides chemical reagent to the surface that is etched thing; And discharging tube, its with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal; Wherein, one in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube, and the shape of the etched port of above-mentioned outer tube is corresponding with above-mentioned pattern that is etched the place and/or the shape that is etched thing.
In the present embodiment, the above-mentioned thing that is etched can be solar cell or solar module, and above-mentioned surface comprises front, the back side and/or the side of above-mentioned solar cell or solar module.One in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube.Link is to make outer tube and interior pipe in the bellows that vertically can relatively move, spring members, screwed part or its combination.In the utility model, except that bellows, spring members, screwed part, other all can enable outer tube and interior pipe can use at the device that vertically can relatively move, the utility model has no restriction to this.In addition, outer tube, interior pipe and link are formed by the etched material of chemically-resistant.
Specify the no mask local Etaching device of present embodiment with reference to the accompanying drawings.
Fig. 1 and 2 is the sketch map of the no mask local Etaching device of present embodiment.Fig. 1 is the stereoscopic figure of no mask local Etaching device of an embodiment of the utility model.Fig. 2 is the longitudinal profile perspective view of the no mask local Etaching device of present embodiment.
As shown in Figure 1, the no mask local Etaching device of present embodiment comprises outer tube 1, interior pipe 2, outer tube external connection end 4 and link 3.
As shown in Figure 2, outer tube 1 can be that cylindrical shape also can be other arbitrary shape in the cross section of vertical tube cavity direction with interior pipe 2.The effect of link 3 is that outer tube 1 and interior pipe 2 longitudinally can be relatively moved, link 3 bellows in embodiment illustrated, but also can be to make longitudinally can relatively move any device of certain distance of outer tube 1 and interior pipe 2.
The operation principle on the no mask local Etaching device etching material surface of present embodiment is as shown in Figure 3.The lower end mouth of pipe of outer tube 1 is contacted and remains on the surface that is etched thing 5; Manage 2 the lower end mouth of pipe in making simultaneously and be etched thing 5 surfaces certain gap is arranged; This space can be owing to be etched the space that thing 5 surface irregularities or the lower end mouth of pipe out-of-flatness of interior pipe 2 are caused, and also can be owing to be etched the space that the lower end mouth of pipe integral body of surface and the interior pipe 2 of thing 5 has a segment distance to be caused.Get in the pipe of interior pipe 2 with the upper end of the chemical reagent 6 that is etched thing 5 surface reactions, then with the surface mass reaction that is etched thing 5 from interior pipe 2; Reaction product and chemical residue 7 from the lower end mouth of pipe of interior pipe 2 be etched the spaces that thing 5 surfaces form and drain, and get into the space that outer tube 1 and interior pipe 2 form; Simultaneously outer tube 1 be etched thing 5 surperficial contact positions because blow-by has air and gets in the outer tube, form gas leakage 8.Then, discharge from outer tube external connection end 4 by gas leakage 8, reaction product and chemical residue 7 formed mixtures 9.Like this, below interior pipe 2 owing to be etched that thing 5 surface atoms are participated in chemical reaction along with reactant is pulled away, thereby form an etch pit.Outer tube 1, interior pipe 2 and outer tube external connection end 4 all are to be processed by corrosion resistant stable material, and they do not react to each other with chemical reagent 6, reaction product and chemical residue 7, gas leakage 8 and mixture 9.
In addition, in order to reduce the gas leakage 8 that is produced as far as possible, can outer tube 1 be etched the seal member that the thing 5 surperficial ports that contact add sealing ring for example etc.
Also have; For prevent effectively reaction product and chemical residue 7 from the etched port of outer tube 1 be etched air gap leakages that thing 5 surfaces form to outer tube 1 outside; Can confirm the geometry of no mask local Etaching device outer tube 1 etched port according near the pattern characteristics the place of being etched and the place of being etched; So that when etching, the etched port of outer tube 1 and the slit that is etched between thing 5 surfaces reduce as far as possible.For example; Want the thin side that is etched thing 5 of etched thickness or near the preceding of side or/and during the surface location of back; Outer tube 1 etched port can adopt groove shapes as shown in Figure 6, but is not limited to shape shown in Figure 6, as long as the shape of the etched port of outer tube 1 is corresponding with the pattern that is etched the place and/or the shape of the thing 5 that is corroded; Its objective is when etching, reduce the etched port of outer tube 1 and be etched the slit between thing 5 surfaces.
In above process, as shown in Figure 3, the flow direction of chemical reagent is to get into from interior pipe 2; Flow out from outer tube external connection end 4, at this moment, the mobile needed power of each material composition is to be provided by the negative pressure that negative pressure pump that is communicated with outer tube external connection end 4 or miscellaneous equipment etc. are produced; Perhaps at the same time; External connection end place at interior pipe 2 is communicated with positive pressure devices such as positive pressure pump, so that a malleation is provided for the chemical reagent 6 in the interior pipe 2, promptly interior pipe 2 has a malleation with respect to etching place that is etched thing 5 surfaces.
In addition, the flow direction of chemical composition also can get into from outer tube external connection end 4, from the external connection end outflow of interior pipe 2; At this moment; The mobile needed power of each material composition is to be provided by the negative pressure that negative pressure pump that is communicated with interior pipe 2 or miscellaneous equipment etc. are produced, and perhaps at the same time, is communicated with positive pressure devices such as positive pressure pump at outer tube external connection end 4 places; So that a malleation is provided for the chemical reagent 6 of outer tube external connection end 4 the insides, promptly with respect to etching place that is etched thing 5 surfaces a malleation is arranged in the outer tube external connection end 4; Negative pressure is provided for these or/and the device of malleation is referred to as the chemomotive force system.That is, the negative pressure that the power that chemical substance flows is produced by outer tube external connection end 4, or the malleation that pipe 2 external connection end produce in having simultaneously provides; The negative pressure that the power that chemical substance flows also can be produced by interior pipe 2 external connection end, or the malleation that has outer tube external connection end 4 to produce simultaneously provides; These negative pressure and malleation all are for etching place that is etched thing 5 surfaces.
When being etched that etch pit appears in thing 5 surfaces and along with the intensification of etch pit; The lower end mouth of pipe of interior pipe 2 and the space that is etched between the thing 5 are strengthened; Contact in order to make chemical reagent 6 continued etched surface with needs better; Through the effect of link 3, pipe 2 declines are managed 2 the lower end mouth of pipe and are etched the space between thing 5 surfaces in reducing in making.In etching process, the distance that interior pipe 2 and outer tube 1 relatively move can be used as a scalar of the etch pit degree of depth that obtains.Thereby, through interior pipe 2 and the distance that outer tube 1 relatively moves, can control the degree of depth of etch pit.Through managing 2 the lower end mouth of pipe in regulating and being etched the space between the thing 5, can also control the flowing velocity of chemical reagent 6, so that reach the etching speed that control is etched thing 5 surfaces.In addition; When the lower end of outer tube 1 mouth of pipe is positioned at etching and is etched on thing 5 surfaces diverse location; The formed fluid field of various chemical compositions on the etch pit surface is different, thereby the chemical reaction type and/or the reaction speed that are continued etched etch pit surface are also different, so; Through managing 2 the lower end mouth of pipe in regulating and being etched the space between the thing 5, can control the pattern on etch pit surface.In a word, through relatively moving of pipe 2 and outer tube 1 in link 3 controls, can be controlled at the pattern that is etched thing 5 lip-deep etch depths, etching speed and etch pit surface is etch profile.Etch pit up to depth desired forms, and just stops chemical reagent 6 in the supply that is etched thing 5 surfaces, and process stops etching.
In no mask local etching process, when the depth direction at etch pit has the material of different component, chemical reagent 6 can be replaced with different chemical compositions or/and stoicheiometry or/and temperature; Can also change the state of chemical reagent 6, can be liquid, gaseous state or vaporific; Can also change the no mask Etaching device that different materials is processed, to reach best etch effect.
Chemical reagent 6 can be H
2O, H
3PO
4, HNO
3, HF, NaOH, KOH, organic solvent or the like one or more mixtures, these reagent not with flow through their mask local Etaching device channel material reaction.When chemical reagent is water, can the no mask Etaching device of present embodiment be used as cleaning device.
When etch pit reaches dark; It is also increasing that its horizontal area becomes; Near the part that is etched thing 5 surface even exceed outer tube 1 lower end external diameter scope, in order to proceed etch process, can be with being etched thing 5 surface levels by erosion and placing up; Or/and the lower end mouth of pipe of outer tube 1 is descended; So that more near the pit surface that is etched out, or/and adopt no mask local Etaching device with different size or profile, or/and adopt caliber to have the no mask local Etaching device that wriggling function changes size; These measures can be controlled chemical composition and can not let out from the outer tube 1 lower end mouth of pipe, also can be controlled at the pattern that is etched thing 5 lip-deep etch depths, etching speed and etch pit surface simultaneously to a certain extent.
When the etched pit quantity of needs more for a long time, can several not had mask local Etaching device and line up an array and constitute a system, be etched material surface and etch a plurality of pits to be implemented in simultaneously.
Generally speaking, the utility model also provides following no mask local engraving method.
A kind of no mask local engraving method is characterized in that, may further comprise the steps: utilize feed pipe to the surface that is etched thing chemical reagent to be provided; Utilize discharging tube with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal; And, regulate etching speed, etch depth and/or etch profile through above-mentioned feed pipe and above-mentioned discharging tube are relatively moved.
In the method, preferred, the step of above-mentioned adjusting etching speed, etch depth and/or etch profile comprises: vertically moving with respect to above-mentioned outer tube through making above-mentioned interior pipe, regulating etching speed, etch depth and/or etch profile.
In addition, preferred, this method is further comprising the steps of: be etched under thing has different component at the depth direction of etch pit the situation of material above-mentioned, change composition, ratio and/or the temperature of above-mentioned chemical reagent.
Specifically, the no mask local engraving method of the utility model, its roughly technical process comprise the steps:
1. confirm to want etched zone;
2. the etched port aligning with Etaching device needs etched zone;
3. start system such as chemomotive force and carry out etching;
4. stop etching when etch depth reaches requirement.
Can know through above description, adopt no mask local Etaching device, the method and system of the utility model, can under the situation that does not need mask, carry out etching material surface; And, can be controlled at and be etched the surperficial pattern of thing 5 lip-deep etch depths, etching speed and etch pit because the interior pipe of the no mask local Etaching device that adopts can have relatively with outer tube vertically moves; This method has etching speed faster, and the technology cost is also lower.In addition, the no mask local Etaching device of the utility model can be repeatedly used, and environment is not produced and pollutes, and the no mask local engraving method of the utility model is a kind of no mask local engraving method of environmental protection.
[application example]
Instance 1: solar cell front or reverse side electric leakage are removed
Electric leakage is an electrical defects very serious in the solar cell, the electric current shunting that it can make solar cell produce, and fill factor, curve factor reduces, and then reduces battery conversion efficiency; Electric leakage can also produce hot spot, burns out solar module.Fig. 4 is that no mask local engraving method is removed solar cell electric leakage sketch map, and for the sake of simplicity, the solar cell shown in Fig. 4 comprises antireflective film 10, emitter region 11, base 12 and back electrode 13, and preceding electrode does not draw.Adopt the no mask local Etaching device of the utility model to remove the battery that the electric leakage method is not limited to this structure shown in Fig. 4; This no mask local Etaching device can be used for all solar cell or solar cell semi-finished product with p-n junction or p-i-n knot, and the electric leakage of removal comprises all, and p-n junction leaks electricity or/and the p-i-n junction leakage because the electric conducting material short circuit is leaked electricity.
Adopt the no mask local Etaching device removal solar cell front or the reverse side electric leakage of the utility model to comprise following flow process:
1. confirm the zone of electric leakage: adopt technology such as electroluminescence, luminescence generated by light, infrared thermal imagery to confirm the position of electric leakage;
2. the etched port aligning that will not have mask local Etaching device needs etched zone;
3. start system such as chemomotive force and carry out etching;
4., etch depth stops etching when reaching the position that electric leakage is removed.
Instance 2: assembly during etching
Fig. 5 adopts the no mask local Etaching device of the utility model and the sketch map of method etch component, and modular construction comprises front surface glass 14, EVA15, solar cell 16, EVA17 and backboard 18.The assembly that no mask local Etaching device of the utility model and method are suitable for comprises all assemblies that is packaged with solar cell, and solar cell wherein comprises that all have the solar cell of p-n junction or p-i-n knot.No mask local Etaching device of the utility model and method any material and the solar cell in can the etching solar module, the position of etched material comprises hot spot, is mingled with, electrically connects the position at places such as coming off in the assembly.
Adopt the no mask local Etaching device etch component of the utility model to comprise following flow process:
1. confirm to want in the assembly etched position;
2. the etched port aligning that will not have mask local Etaching device needs etched zone;
3. start system such as chemomotive force and carry out etching;
4. when reaching needs are removed, etch depth stops etching when target is removed fully.
Instance 3: solar cell perforation technology
In the solar cell technical process, often to use perforation technology, that is: with the direction perforate of the solar cell semi-finished product after initial silicon chip or one or more solar cell technologies of silicon chip process, penetrating until fully at the vertical si plate plane.For example in emitter coating (Emitter Wrap Through-EWT) solar cell and metallic cover (Metal Wrap Through-MWT) solar cell, in the technical process, just need prepare several holes with laser from front surface to the surface, back.No mask local Etaching device of the utility model and method can be used for comprising before each processing procedure link of various solar cells of EWT, MWT solar cell or later perforation technology, and the hole that is connected is penetrating fully from the thickness direction of silicon chip, solar cell semifinished or finished goods.
Adopt the no mask local Etaching device of the utility model to realize that the processing step of solar cell perforation is following:
1. need to confirm the position of perforation at initial silicon chip or solar cell semi-finished product;
2. the etched port aligning that will not have mask local Etaching device needs the zone of perforation;
3. start system such as chemomotive force and carry out etching;
4. after the hole connects and after reaching the pattern that needs, stop etching.
Instance 4: solar cell perforate
The existing screen printing crystalline silicon solar cell of market share more than 80% that account for; It is exactly to process the antapex contact structures that its efficient also has the place of very big lifting; Promptly regional major part will have good passivating film to cover at the back side of base; And, promptly being several local areas of dispersed and distributed in other zone, the base material just forms ohmic contact with metal electrode.Hole opening technology will be used in these places that form local ohmic contact; So that with the back side of base need to form the place of ohmic contact exposed with metal; Not being passivated film covers; Directly prepare one deck electrode metal film then in this place, pass through sintering afterwards so that form ohmic contact, this solar cell promptly is called antapex contact solar cell.
The no mask local Etaching device and the method for the utility model can be used for comprising that antapex contacts before each processing procedure link of various solar cells of solar cell or later hole opening technology, the position of perforate can be solar battery surface all need form the zone of pit or groove.
Adopt the needed step of no mask local Etaching device hole opening technology of the utility model following:
1. need to confirm the position of perforate at the solar cell semi-finished product;
2. the etched port aligning that will not have mask local Etaching device needs the zone of perforate;
3. start system such as chemomotive force and carry out etching;
4., perforate stops etching after reaching the pattern that needs.
Instance 5: material surface sampling
Sometimes, the following certain zone in material surface regional area surface or surface needs sampling carry out the certain analysis test, and the no mask local engraving method of use the utility model can be realized the preparation of sample.No mask local engraving method can be used for the local sampling of material surface, both can be used for the sampling of skin-material, also can realize the sampling of the following layers of material in material regional area surface step by step.
It is following to adopt the no mask local Etaching device of the utility model to carry out the material surface sampling process:
1. confirm the surf zone of sampling;
2. the etched port aligning that will not have mask local Etaching device needs the zone of sampling;
3. start system such as chemomotive force and carry out etching, and collect the composition after the after chemical reaction, if multilayer material can be collected every layer material respectively;
4., sampling amount stops etching after reaching requirement.
Instance 6: the solar cell edge current leakage is removed
The position of solar cell edge current leakage is or/and reverse side in the side of battery or from the front of lateral distance very near (being generally less than 2mm); As shown in Figure 6; For prevent effectively reaction product and chemical residue 7 from the etched port of outer tube 1 be etched air gap leakages that thing 5 surfaces form to outer tube 1 outside; Outer tube 1 etched port can adopt shape as shown in Figure 6; But be not limited to shape shown in Figure 6, its objective is when etching outer tube 1 etched port of minimizing and be etched the slit between thing 5 surfaces.
Adopt the no mask local Etaching device removal solar cell edge current leakage of the utility model to may further comprise the steps (like Fig. 6-8):
1. confirm the zone of edge current leakage;
2. select the outer tube etched port to have the no mask Etaching device of slit opening;
2. solar cell piece is embedded slit opening, pipe 2 etched ports are over against wanting etched zone (like Fig. 8) in making;
3. start system such as chemomotive force and carry out etching;
4., etch depth stops etching when reaching the degree of depth that electric leakage is removed.
Though more than embodiment through certain exemplary to no mask local Etaching device, the no mask local engraving method of the utility model and do not have mask local etch system and carried out detailed description; But above these embodiment are not exhaustive, and those skilled in the art can realize variations and modifications in the spirit of the utility model and scope.Therefore, the utility model is not limited to these embodiment, and the scope of the utility model only is as the criterion with appended claims.
Claims (10)
1. a no mask local Etaching device is characterized in that, comprising:
Feed pipe, it provides chemical reagent to the surface that is etched thing; And
Discharging tube, its with above-mentioned chemical reagent and the above-mentioned reacted material of thing that is etched from above-mentioned surface removal;
Wherein, one in above-mentioned discharging tube and the above-mentioned feed pipe is interior pipe, and another is an outer tube, and the shape of the etched port of above-mentioned outer tube is corresponding with above-mentioned pattern that is etched the place and/or the shape that is etched thing.
2. no mask local Etaching device according to claim 1 is characterized in that, also comprises:
Link, it is connected above-mentioned feed pipe with above-mentioned feed pipe and the relatively-movable mode of above-mentioned discharging tube with above-mentioned discharging tube.
3. no mask local Etaching device according to claim 1 and 2 is characterized in that,
The above-mentioned thing that is etched comprises solar cell or solar module, and above-mentioned surface comprises front, the back side and/or the side of above-mentioned solar cell or solar module.
4. no mask local Etaching device according to claim 1 and 2 is characterized in that, also comprises:
At above-mentioned outer tube and the above-mentioned seal member of wanting between the etched surface.
5. no mask local Etaching device according to claim 1 and 2 is characterized in that,
The etched port of above-mentioned outer tube be shaped as groove shapes.
6. no mask local Etaching device according to claim 2 is characterized in that,
The mode that above-mentioned link seals with the junction with above-mentioned feed pipe and above-mentioned discharging tube, just above-mentioned feed pipe is connected with above-mentioned discharging tube.
7. no mask local Etaching device according to claim 2 is characterized in that,
Above-mentioned link comprises bellows, spring members, screwed part or its combination.
8. no mask local Etaching device according to claim 1 and 2 is characterized in that,
The inside of above-mentioned discharging tube is negative pressure.
9. a no mask local etch system is characterized in that, comprising:
A plurality of each described no mask local Etaching devices according to claim 1-8.
10. no mask local etch system according to claim 9 is characterized in that,
Above-mentioned a plurality of no mask local Etaching device is lined up array.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200322514U CN202633359U (en) | 2012-01-31 | 2012-01-31 | Maskless local etching apparatus and maskless local etching system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200322514U CN202633359U (en) | 2012-01-31 | 2012-01-31 | Maskless local etching apparatus and maskless local etching system |
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| CN202633359U true CN202633359U (en) | 2012-12-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227234A (en) * | 2012-01-31 | 2013-07-31 | 张陆成 | Maskless local etching device, maskless local eteching method and maskless local eteching system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227234A (en) * | 2012-01-31 | 2013-07-31 | 张陆成 | Maskless local etching device, maskless local eteching method and maskless local eteching system |
| CN103227234B (en) * | 2012-01-31 | 2016-06-22 | 张陆成 | The Etaching device of local without mask, method and system |
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