JPH0520912B2 - - Google Patents
Info
- Publication number
- JPH0520912B2 JPH0520912B2 JP58161852A JP16185283A JPH0520912B2 JP H0520912 B2 JPH0520912 B2 JP H0520912B2 JP 58161852 A JP58161852 A JP 58161852A JP 16185283 A JP16185283 A JP 16185283A JP H0520912 B2 JPH0520912 B2 JP H0520912B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass
- semiconductor device
- film
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 62
- 239000011521 glass Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000003491 array Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161852A JPS5972165A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161852A JPS5972165A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57226122A Division JPS58112363A (ja) | 1982-12-24 | 1982-12-24 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323301A Division JPH02363A (ja) | 1988-12-23 | 1988-12-23 | 光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5972165A JPS5972165A (ja) | 1984-04-24 |
| JPH0520912B2 true JPH0520912B2 (US20100056889A1-20100304-C00004.png) | 1993-03-22 |
Family
ID=15743167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58161852A Granted JPS5972165A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5972165A (US20100056889A1-20100304-C00004.png) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979185A (US20100056889A1-20100304-C00004.png) * | 1972-12-04 | 1974-07-31 | ||
| JPS4984587A (US20100056889A1-20100304-C00004.png) * | 1972-12-19 | 1974-08-14 | ||
| JPS49123273A (US20100056889A1-20100304-C00004.png) * | 1973-03-29 | 1974-11-26 | ||
| JPS503780A (US20100056889A1-20100304-C00004.png) * | 1973-05-15 | 1975-01-16 | ||
| JPS53120336A (en) * | 1977-03-30 | 1978-10-20 | Hitachi Ltd | Photoelectric converter with composite function |
-
1983
- 1983-09-05 JP JP58161852A patent/JPS5972165A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979185A (US20100056889A1-20100304-C00004.png) * | 1972-12-04 | 1974-07-31 | ||
| JPS4984587A (US20100056889A1-20100304-C00004.png) * | 1972-12-19 | 1974-08-14 | ||
| JPS49123273A (US20100056889A1-20100304-C00004.png) * | 1973-03-29 | 1974-11-26 | ||
| JPS503780A (US20100056889A1-20100304-C00004.png) * | 1973-05-15 | 1975-01-16 | ||
| JPS53120336A (en) * | 1977-03-30 | 1978-10-20 | Hitachi Ltd | Photoelectric converter with composite function |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5972165A (ja) | 1984-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0023021B1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2838318B2 (ja) | 感光装置及びその作製方法 | |
| US4866291A (en) | Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film | |
| EP0165764B1 (en) | Depletion mode thin film semiconductor photodetectors | |
| US20080070340A1 (en) | Image sensor using thin-film SOI | |
| JPH04286361A (ja) | 固体撮像装置 | |
| EP0494694B1 (en) | Photoelectric converting device and image processing apparatus utilizing the same | |
| US6452212B1 (en) | Semiconductor device and method for operating the same | |
| EP0178148A2 (en) | Thin film photodetector | |
| CA1145835A (en) | Photoelectric device and method of producing the same | |
| JPS6292365A (ja) | 半導体装置およびその製造方法 | |
| JPH04261071A (ja) | 光電変換装置 | |
| JPH0426789B2 (US20100056889A1-20100304-C00004.png) | ||
| JPH0520912B2 (US20100056889A1-20100304-C00004.png) | ||
| JPS6318340B2 (US20100056889A1-20100304-C00004.png) | ||
| JP3267375B2 (ja) | 固体撮像装置 | |
| JPH07254693A (ja) | 固体撮像装置及びその製造方法 | |
| JPH05136386A (ja) | イメージセンサ | |
| JP2603285B2 (ja) | 光導電型イメージセンサの製造方法 | |
| JPH04261070A (ja) | 光電変換装置 | |
| JPH0983010A (ja) | 赤外線受光装置およびその製造方法 | |
| JPH04216670A (ja) | 光電変換装置 | |
| JPH06260626A (ja) | 画像読み取り装置 | |
| JP2505848B2 (ja) | 光導電型イメ―ジセンサ | |
| JP2601475B2 (ja) | 光電変換装置の作製方法 |
