JPH0519088B2 - - Google Patents
Info
- Publication number
- JPH0519088B2 JPH0519088B2 JP62166176A JP16617687A JPH0519088B2 JP H0519088 B2 JPH0519088 B2 JP H0519088B2 JP 62166176 A JP62166176 A JP 62166176A JP 16617687 A JP16617687 A JP 16617687A JP H0519088 B2 JPH0519088 B2 JP H0519088B2
- Authority
- JP
- Japan
- Prior art keywords
- corresponding part
- epitaxial layer
- pressure
- vibrating
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 238000007789 sealing Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16617687A JPS6410139A (en) | 1987-07-02 | 1987-07-02 | Manufacture of vibration type transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16617687A JPS6410139A (en) | 1987-07-02 | 1987-07-02 | Manufacture of vibration type transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6410139A JPS6410139A (en) | 1989-01-13 |
| JPH0519088B2 true JPH0519088B2 (fi) | 1993-03-15 |
Family
ID=15826487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16617687A Granted JPS6410139A (en) | 1987-07-02 | 1987-07-02 | Manufacture of vibration type transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410139A (fi) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03226637A (ja) * | 1990-01-31 | 1991-10-07 | Yokogawa Electric Corp | 振動子形半導体圧力計 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186725A (ja) * | 1984-03-06 | 1985-09-24 | Yokogawa Hokushin Electric Corp | 圧力センサ |
| JPS61221631A (ja) * | 1984-10-11 | 1986-10-02 | バイサラ・オ−ワイ | 容量式絶対圧力変換器 |
-
1987
- 1987-07-02 JP JP16617687A patent/JPS6410139A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186725A (ja) * | 1984-03-06 | 1985-09-24 | Yokogawa Hokushin Electric Corp | 圧力センサ |
| JPS61221631A (ja) * | 1984-10-11 | 1986-10-02 | バイサラ・オ−ワイ | 容量式絶対圧力変換器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410139A (en) | 1989-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |