JPH05178689A - Production of noble metal single crystal - Google Patents
Production of noble metal single crystalInfo
- Publication number
- JPH05178689A JPH05178689A JP35760391A JP35760391A JPH05178689A JP H05178689 A JPH05178689 A JP H05178689A JP 35760391 A JP35760391 A JP 35760391A JP 35760391 A JP35760391 A JP 35760391A JP H05178689 A JPH05178689 A JP H05178689A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- noble metal
- ball
- wire
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、触媒(能)と結晶面と
の関係を考慮した触媒研究用貴金属単結晶や生化学反応
と結晶面の関係を調査するために生化学反応を生起する
ためのベースプレートに使用する貴金属単結晶の製造方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention causes a biochemical reaction in order to investigate the relationship between a noble metal single crystal for catalyst research in consideration of the relationship between the catalyst (ability) and the crystal plane and the relationship between the biochemical reaction and the crystal plane. The present invention relates to a method for producing a noble metal single crystal used for a base plate for a metal.
【0002】[0002]
【従来の技術】貴金属を溶融し、凝固すると、細い部分
に単結晶が生成され易く、太い部分は多結晶になり易い
為、図12に示すように 0.3mmの貴金属細線1を使用して
単結晶を作っている。即ち、貴金属細線1の下端部を加
熱溶融して溶融ボール2を作り、次に熱源3を溶融ボー
ル2から下方へ次第に移動していき、ボールの単結晶塊
2′を作っている。しかし、貴金属細線1では大きな単
結晶ができない。そこで大きな単結晶を作るには、図13
に示すようにボールの単結晶塊2′の下半部に球径2mm
位の大きなボール4を付け、大きいボールを加熱溶融
し、次に熱源3を下方へ次第に移動して凝固させてい
た。しかしながら、シード(貴金属細線)1に対して垂
直面にできた結晶面が欲しい面とは限らず、大きいボー
ル4を欲しい結晶面でカットすると、図14に示すように
シード1に対して偏った不都合な結晶面4が得られたり
し、研究用試料として取り扱いにくかった。2. Description of the Related Art When a noble metal is melted and solidified, a single crystal is easily generated in a thin portion and a polycrystal is easily formed in a thick portion. Therefore, as shown in FIG. Making crystals. That is, the lower end of the precious metal fine wire 1 is heated and melted to form a molten ball 2, and then the heat source 3 is gradually moved downward from the molten ball 2 to form a single crystal mass 2'of the ball. However, the precious metal fine wire 1 cannot form a large single crystal. So, to make a large single crystal,
As shown in Fig.2, the ball diameter is 2 mm
A large ball 4 was attached, the large ball was heated and melted, and then the heat source 3 was gradually moved downward and solidified. However, the crystal plane formed perpendicular to the seed (noble metal fine wire) 1 is not always the desired plane, and when the large ball 4 is cut with the desired crystal plane, it is biased with respect to the seed 1 as shown in FIG. An inconvenient crystal plane 4 was obtained, and it was difficult to handle as a research sample.
【0003】[0003]
【発明が解決しようとする課題】本発明は上記実情に鑑
みなされたもので、質の良い貴金属単結晶を容易に作る
ことができ、またシードに対して垂直な理想的な結晶面
を精度良く簡単に作ることができて研究用試料として取
り扱い容易な貴金属単結晶を製造することのできる方法
を提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to easily produce a high-quality noble metal single crystal, and to accurately form an ideal crystal plane perpendicular to the seed. An object of the present invention is to provide a method capable of producing a noble metal single crystal that can be easily produced and is easy to handle as a research sample.
【0004】[0004]
【課題を解決するための手段】上記課題を解決するため
の本発明の貴金属単結晶の製造方法は、貴金属線の途中
又は2本の貴金属線を突き合わせその突き合わせ部分を
加熱溶融すると共に該貴金属線を両端側に引っ張って加
熱溶融部分を細く延伸し、単結晶を成長させ、次に単結
晶成長後、貴金属線の一方の太い部分を次第に加熱溶融
していき、大きなボールの単結晶塊を作成し、次いでこ
のボールの単結晶塊にシードを欲しい結晶面に対し垂直
に溶接した後貴金属線の細い部分を切断し、然る後ボー
ルの単結晶塊を中央部よりやや上方まで溶融し、下方に
向かって凝固させることを特徴とするものである。A method for producing a noble metal single crystal according to the present invention for solving the above-mentioned problems is a noble metal wire in the middle or two noble metal wires are butted and the butted portion is heated and melted. By pulling to the both ends to thinly draw the heated and melted part, grow a single crystal, and then grow the single crystal, and gradually heat and melt one thick part of the precious metal wire to create a single crystal mass of a large ball. Then, a seed is welded perpendicularly to the desired crystal plane on the single crystal ingot of this ball, then the thin part of the precious metal wire is cut, and then the single crystal ingot of the ball is melted slightly above the central part, It is characterized by solidifying toward.
【0005】[0005]
【作用】上記のように本発明の貴金属単結晶の製造方法
は、太い貴金属線の途中を加熱溶融すると共に該貴金属
線を両端側に引っ張って加熱溶融部分を細く延伸し、単
結晶を成長させるので、この細い部分では質の良い単結
晶が得られる。次に貴金属線の一方の太い部分を次第に
加熱溶融していき、大きなボールの単結晶塊を作成する
ので、この単結晶塊は前記の質の良い単結晶がそのまま
延長して成長したものとなる。次いで、このボールの単
結晶塊にシードを結晶面に対し垂直に溶接した後前記貴
金属線の細い部分を切断し、然る後ボールの単結晶塊を
中央部よりやや上方まで溶融し、下方に向かって凝固さ
せるので、シードに対し欲しい質の良い結晶面が垂直に
ボールの単結晶塊に形成される。As described above, in the method for producing a noble metal single crystal of the present invention, a thick noble metal wire is heated and melted in the middle, and the noble metal wire is pulled toward both ends to thinly draw the heated and melted portion to grow a single crystal. Therefore, a good quality single crystal can be obtained in this thin portion. Next, one thick part of the noble metal wire is gradually heated and melted to form a large ball single crystal ingot, and this single crystal ingot is obtained by extending and growing the above-mentioned high quality single crystal as it is. . Then, a seed is welded to the single crystal ingot of the ball perpendicularly to the crystal plane, the thin portion of the precious metal wire is cut, and then the single crystal ingot of the ball is melted to slightly above the central portion, and then downward. Since it solidifies toward the seed, the desired crystal plane of the seed is formed perpendicularly to the single crystal ingot of the ball.
【0006】[0006]
【実施例1】本発明の貴金属単結晶の製造方法の一実施
例を図によって説明すると、図1に示すように線径2mm
のPt線10の途中を加熱溶融すると共に該Pt線10を両
端側に引っ張って加熱溶融部11を最小径 0.9mmに延伸
し、単結晶を成長させた。次に単結晶成長後Pt線10の
一方の太い部分を次第に加熱溶融していき、図2に示す
ように球径4mmの大きなボールの単結晶塊12を作製し
た。次いで図3に示すようにボールの単結晶塊12に線径
1mmの細いシード(Pt線)13をファセット12aを基に
欲しい結晶面に対し垂直となるように溶接した後、Pt
線10を細い部分で図4に示すように切り離した。然る後
シード13を把持し、ボールの単結晶塊12を下にして図5
に示すように真っ直ぐに立て、単結晶塊12を中央部より
やや上方まで溶融し、下方に向かって凝固させた。その
結果、シード13に対し欲しい質の良い結晶面が垂直にボ
ールの単結晶塊12′に形成された。Example 1 An example of a method for producing a noble metal single crystal of the present invention will be described with reference to the drawings. As shown in FIG.
The Pt wire 10 was heated and melted in the middle, and the Pt wire 10 was pulled toward both ends to stretch the heat-melted portion 11 to a minimum diameter of 0.9 mm to grow a single crystal. Next, after the single crystal growth, one thick portion of the Pt wire 10 was gradually heated and melted to prepare a large ball single crystal mass 12 having a spherical diameter of 4 mm as shown in FIG. Then, as shown in FIG. 3, a thin seed (Pt wire) 13 having a wire diameter of 1 mm is welded to the single crystal ingot 12 of the ball so as to be perpendicular to the desired crystal plane based on the facet 12a, and then Pt.
The line 10 was cut off at the narrow part as shown in FIG. After that, the seed 13 is grasped, and the single crystal mass 12 of the ball is faced down.
As shown in (1), the single crystal lump 12 was melted to a position slightly above the center and solidified downward as shown in FIG. As a result, desired high quality crystal planes were formed perpendicularly to the seeds 13 in the ball single crystal mass 12 '.
【0007】[0007]
【実施例2】図6に示すように線径2mmのPt線14と線
径1mmのPt線15を突き合わせ、その突き合わせ部分が
融合するように加熱溶融し、次に図7に示すように1φ
mmのPt線15側を成長させて2φmmにし、 0.8φmmに延
伸して10mm生長させた後、図8に示すように4φmmの球
状単結晶塊16を作製した。次いで生長した(III) ファセ
ット16aを基に欲しい結晶面を垂直となるような結晶成
長方向をレーザービーム法で定め、再び図9に示すよう
に単結晶塊16を成長させてシードを溶接しやすくするた
めに細くした単結晶塊16′とした。次に図10に示すよう
に1φmmのシード(Pt線)17を溶接した後、Pt線15
の細い部分で切り離した。然る後シード17を把持し、単
結晶塊16′を下にして図11に示すように真っ直ぐに立
て、単結晶塊16′を中央部よりやや上方まで溶融し、下
方に向かって凝固させた。その結果、シード17に対して
質のよい結晶面が垂直にボールの単結晶塊16″に形成さ
れた。[Embodiment 2] As shown in FIG. 6, a Pt wire 14 having a wire diameter of 2 mm and a Pt wire 15 having a wire diameter of 1 mm are butted and heated and melted so that the butted portions are fused, and then as shown in FIG.
After growing the Pt wire 15 side having a diameter of 2 mm to a diameter of 2 mm, stretching it to 0.8 mm and growing it for 10 mm, a spherical single crystal mass 16 having a diameter of 4 mm was prepared as shown in FIG. Then, based on the grown (III) facet 16a, the crystal growth direction is set by the laser beam method so that the desired crystal plane becomes vertical, and as shown in FIG. 9 again, the single crystal ingot 16 is grown and the seed is easily welded. For this purpose, a single crystal ingot 16 'was made thin. Next, as shown in FIG. 10, after welding a seed (Pt wire) 17 of 1 mm, the Pt wire 15
I cut it off with a thin part. After that, the seed 17 was gripped, and the single crystal ingot 16 'was erected straight up as shown in FIG. 11, the single crystal ingot 16' was melted slightly above the central portion, and solidified downward. . As a result, a high-quality crystal plane was formed perpendicularly to the seed 17 in a ball single crystal mass 16 ″.
【0008】こうして得られた単結晶塊12を、研究用試
料として使用する時は、単結晶塊12をシード13に対し垂
直に切断し、切断した面の良質の結晶面を研摩する。か
くして、取り扱い容易で、精査できる触媒研究用Pt単
結晶や生化学生起用Pt単結晶が得られる。When the thus obtained single crystal ingot 12 is used as a research sample, the single crystal ingot 12 is cut perpendicularly to the seed 13 and the cut surface is polished to a good quality crystal plane. Thus, a Pt single crystal for catalyst research and a Pt single crystal for biosynthesis students which are easy to handle and can be scrutinized can be obtained.
【0009】[0009]
【発明の効果】以上の通り本発明の貴金属単結晶の製造
方法によれば、質の良い貴金属単結晶面を容易に作るこ
とができ、またシードに対して垂直な理想的な結晶面を
有し、従って、取り扱い容易で、精査のできる触媒研究
用や生化学反応生起用の貴金属単結晶を簡単に作ること
ができる。As described above, according to the method for producing a noble metal single crystal of the present invention, a good quality noble metal single crystal plane can be easily formed, and an ideal crystal plane perpendicular to the seed is provided. Therefore, it is possible to easily produce a noble metal single crystal which is easy to handle and can be scrutinized for catalytic research or for inducing biochemical reaction.
【図1】本発明の貴金属単結晶の製造方法の一実施例の
工程を示す図である。FIG. 1 is a diagram showing steps of an example of a method for producing a noble metal single crystal of the present invention.
【図2】本発明の貴金属単結晶の製造方法の一実施例の
工程を示す図である。FIG. 2 is a diagram showing steps of an embodiment of a method for producing a noble metal single crystal of the present invention.
【図3】本発明の貴金属単結晶の製造方法の一実施例の
工程を示す図である。FIG. 3 is a diagram showing steps of one embodiment of the method for producing a noble metal single crystal of the present invention.
【図4】本発明の貴金属単結晶の製造方法の一実施例の
工程を示す図である。FIG. 4 is a diagram showing steps of an example of a method for producing a noble metal single crystal of the present invention.
【図5】本発明の貴金属単結晶の製造方法の一実施例の
工程を示す図である。FIG. 5 is a diagram showing steps of an example of a method for producing a noble metal single crystal of the present invention.
【図6】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 6 is a diagram showing steps of another embodiment of the method for producing a noble metal single crystal of the present invention.
【図7】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 7 is a diagram showing steps of another embodiment of the method for producing a noble metal single crystal of the present invention.
【図8】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 8 is a diagram showing steps of another embodiment of the method for producing a noble metal single crystal of the present invention.
【図9】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 9 is a diagram showing steps of another embodiment of the method for producing a noble metal single crystal of the present invention.
【図10】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 10 is a diagram showing a step of another example of the method for producing a noble metal single crystal of the present invention.
【図11】本発明の貴金属単結晶の製造方法の他の一実施
例の工程を示す図である。FIG. 11 is a diagram showing a step of another example of the method for producing a noble metal single crystal of the present invention.
【図12】従来の貴金属単結晶の製造方法を示す図であ
る。FIG. 12 is a diagram showing a conventional method for producing a noble metal single crystal.
【図13】従来の他の貴金属単結晶の製造方法を示す図で
ある。FIG. 13 is a diagram showing another conventional method for producing a noble metal single crystal.
【図14】図7の製造方法により得た貴金属単結晶を欲し
い結晶面でカットした状態を示す図である。14 is a diagram showing a state in which a noble metal single crystal obtained by the manufacturing method of FIG. 7 is cut at a desired crystal plane.
10 貴金属線(Pt線) 11 加熱溶融部 12,16′,16″ 単結晶塊 12a,16a ファセット 13,17 シード 14,15 Pt線 16 球状単結晶塊 10 Noble metal wire (Pt wire) 11 Heating / melting part 12, 16 ', 16 ″ Single crystal ingot 12a, 16a Facet 13, 17 Seed 14, 15 Pt wire 16 Spherical single crystal ingot
Claims (1)
き合わせ、その突き合わせ部分を加熱溶融すると共に該
貴金属線を両端側に引っ張って加熱溶融部分を細く延伸
し、単結晶を成長させ、次に単結晶成長後、貴金属線の
一方の太い部分を次第に加熱溶融していき、大きなボー
ルの単結晶塊を作成し、次いでこのボールの単結晶塊に
シードを結晶面に対し垂直に溶接した後貴金属線の細い
部分を切断し、然る後ボールの単結晶塊を中央部よりや
や上方まで溶融し、下方に向かって凝固させることを特
徴とする貴金属単結晶の製造方法。1. A noble metal wire or two noble metal wires are butted against each other, the butted parts are heated and melted, and the noble metal wires are pulled toward both ends to thinly draw the heated and melted parts to grow a single crystal. After the single crystal growth, one thick part of the noble metal wire is gradually heated and melted to form a large ball single crystal mass, and then a seed is welded to the single crystal mass of this ball perpendicular to the crystal plane. A method for producing a noble metal single crystal, which comprises cutting a thin part of a noble metal wire, and then melting a single crystal mass of a ball to a position slightly above the central part and solidifying downward.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35760391A JPH05178689A (en) | 1991-12-26 | 1991-12-26 | Production of noble metal single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35760391A JPH05178689A (en) | 1991-12-26 | 1991-12-26 | Production of noble metal single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05178689A true JPH05178689A (en) | 1993-07-20 |
Family
ID=18454972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35760391A Pending JPH05178689A (en) | 1991-12-26 | 1991-12-26 | Production of noble metal single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05178689A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10304533A1 (en) * | 2003-02-04 | 2004-08-12 | Forschungszentrum Jülich GmbH | Bead single-crystal with provision for electrical heating, ease of cleaning and electroplating applications, as supply wires |
-
1991
- 1991-12-26 JP JP35760391A patent/JPH05178689A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10304533A1 (en) * | 2003-02-04 | 2004-08-12 | Forschungszentrum Jülich GmbH | Bead single-crystal with provision for electrical heating, ease of cleaning and electroplating applications, as supply wires |
DE10304533B4 (en) * | 2003-02-04 | 2008-01-31 | Forschungszentrum Jülich GmbH | Bead crystal and method of making a bead crystal and use |
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