JPS6317329B2 - - Google Patents

Info

Publication number
JPS6317329B2
JPS6317329B2 JP56137546A JP13754681A JPS6317329B2 JP S6317329 B2 JPS6317329 B2 JP S6317329B2 JP 56137546 A JP56137546 A JP 56137546A JP 13754681 A JP13754681 A JP 13754681A JP S6317329 B2 JPS6317329 B2 JP S6317329B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56137546A
Other languages
Japanese (ja)
Other versions
JPS5839012A (en
Inventor
Junji Sakurai
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56137546A priority Critical patent/JPS6317329B2/ja
Publication of JPS5839012A publication Critical patent/JPS5839012A/en
Publication of JPS6317329B2 publication Critical patent/JPS6317329B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
JP56137546A 1981-08-31 1981-08-31 Expired JPS6317329B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56137546A JPS6317329B2 (en) 1981-08-31 1981-08-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56137546A JPS6317329B2 (en) 1981-08-31 1981-08-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP813889A Division JPH0353772B2 (en) 1989-01-17 1989-01-17

Publications (2)

Publication Number Publication Date
JPS5839012A JPS5839012A (en) 1983-03-07
JPS6317329B2 true JPS6317329B2 (en) 1988-04-13

Family

ID=15201214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56137546A Expired JPS6317329B2 (en) 1981-08-31 1981-08-31

Country Status (1)

Country Link
JP (1) JPS6317329B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925215A (en) * 1982-08-02 1984-02-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60152017A (en) * 1984-01-20 1985-08-10 Agency Of Ind Science & Technol Electron beam annealing device
JPH0722119B2 (en) * 1984-02-06 1995-03-08 富士通株式会社 Beam annealing method
JPS61245517A (en) * 1985-04-23 1986-10-31 Agency Of Ind Science & Technol Formation of soi crystal
EP0431685A1 (en) * 1989-12-05 1991-06-12 Koninklijke Philips Electronics N.V. Method of forming thin defect-free strips of monocrystalline silicon on insulators
JP2002057105A (en) * 2000-08-14 2002-02-22 Nec Corp Method and device for manufacturing semiconductor thin film, and matrix circuit-driving device
TW521310B (en) 2001-02-08 2003-02-21 Toshiba Corp Laser processing method and apparatus
JP2006100661A (en) * 2004-09-30 2006-04-13 Sony Corp Method of manufacturing thin film semiconductor device
JP2007281421A (en) * 2006-03-13 2007-10-25 Sony Corp Method of crystallizing semiconductor thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device

Also Published As

Publication number Publication date
JPS5839012A (en) 1983-03-07

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