JPH05175528A - Manufacture of amorphous silicon solar cell - Google Patents
Manufacture of amorphous silicon solar cellInfo
- Publication number
- JPH05175528A JPH05175528A JP3344263A JP34426391A JPH05175528A JP H05175528 A JPH05175528 A JP H05175528A JP 3344263 A JP3344263 A JP 3344263A JP 34426391 A JP34426391 A JP 34426391A JP H05175528 A JPH05175528 A JP H05175528A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- surface electrode
- amorphous silicon
- zinc oxide
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、太陽電池等の光デバイ
ス装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical device such as a solar cell.
【０００２】[0002]
【従来の技術】ｐｉｎ接合を有するアモルファスシリコ
ン太陽電池では、ガラス基板上に透明電極層、例えばイ
ンジウムスズ酸化物や酸化亜鉛等をスパッタ法や熱ＣＶ
Ｄ法で形成させ、次にアモルファスシリコン層、ｎ型ア
モルファスシリコン層をプラズマＣＶＤ法にて形成す
る。そのｎ型層には微結晶アモルファスシリコンが用い
られている。その後、スパッタ法や蒸着法、あるいは熱
ＣＶＤ法で裏面電極、例えばアルミニウム、酸化亜鉛、
銀、銅などを形成する。2. Description of the Related Art In an amorphous silicon solar cell having a pin junction, a transparent electrode layer such as indium tin oxide or zinc oxide is formed on a glass substrate by a sputtering method or thermal CV.
Then, the amorphous silicon layer and the n-type amorphous silicon layer are formed by the plasma CVD method. Microcrystalline amorphous silicon is used for the n-type layer. After that, a back surface electrode such as aluminum, zinc oxide, or the like is formed by a sputtering method, an evaporation method, or a thermal CVD method.
Form silver, copper, etc.
【０００３】[0003]
【発明が解決しようとする課題】ところで、変換効率の
向上を図るための一つの方法として、裏面電極を２層構
造にすることが知られている。すなわち、裏面電極はｎ
型層上に形成され、透過光を散乱させる第１の裏面電極
と該第１裏面電極内で散乱する光を完全に封じ込めるた
めの第２裏面電極から構成される。例えば、第１裏面電
極には酸化亜鉛を、また第２裏面電極にはアルミニウ
ム、銀、銅などが用いられている。しかし、酸化亜鉛の
電気伝導度が低い場合は、ｎ層と酸化亜鉛との接触抵抗
が高くなり、オーミック特性が低下し、太陽電池の変換
効率に影響を与えるという問題があった。本発明の目的
は、ｎ型層と裏面電極層のオーミック接合を良くし、曲
線因子を改善して高効率なアモルファスシリコン太陽電
池の製造方法を提供することにある。By the way, it is known that the back electrode has a two-layer structure as one method for improving the conversion efficiency. That is, the back electrode is n
The first back surface electrode is formed on the mold layer and scatters the transmitted light, and the second back surface electrode for completely confining the light scattered in the first back surface electrode. For example, zinc oxide is used for the first back surface electrode, and aluminum, silver, copper or the like is used for the second back surface electrode. However, when the electrical conductivity of zinc oxide is low, there is a problem that the contact resistance between the n layer and zinc oxide becomes high, the ohmic characteristics deteriorate, and the conversion efficiency of the solar cell is affected. An object of the present invention is to improve the ohmic contact between the n-type layer and the back electrode layer, improve the fill factor, and provide a highly efficient method for manufacturing an amorphous silicon solar cell.
【０００４】[0004]
【課題を解決するための手段】上記の目的を達成するた
め、本発明はプラズマＣＶＤ法にて、ｎ型層が微結晶シ
リコン膜であるｐｉｎ接合構造を有するアモルファスシ
リコン太陽電池の製造方法において、前記ｎ型層の形成
後に、ターゲット材中に金属をドープしてスパッタ法に
て第１裏面電極を形成する工程と、前記第１裏面電極上
に第２裏面電極を形成する工程と、前記第２裏面電極を
形成した後に熱処理を行う工程とを具備するものであ
る。好ましくは、第１裏面電極を酸化亜鉛とし、該酸化
亜鉛のターゲット材にアルミニウムが添加されている。In order to achieve the above object, the present invention provides a method for producing an amorphous silicon solar cell having a pin junction structure in which an n-type layer is a microcrystalline silicon film by a plasma CVD method. After the formation of the n-type layer, a step of doping a target material with a metal to form a first back surface electrode by a sputtering method; a step of forming a second back surface electrode on the first back surface electrode; 2 a step of performing heat treatment after forming the back surface electrode. Preferably, the first back surface electrode is zinc oxide, and aluminum is added to the target material of the zinc oxide.
【０００５】[0005]
【作用】ｎ型アモルファスシリコン層上に、少なくとも
スパッタ法で形成される第１裏面電極をもつ裏面電極の
形成後に熱処理を施すことにより、ｎ型層と酸化亜鉛膜
のオーミック接合を良くし、曲線因子が改善される。By forming a back surface electrode having at least a first back surface electrode formed by a sputtering method on the n-type amorphous silicon layer and then performing a heat treatment, the ohmic contact between the n-type layer and the zinc oxide film is improved, and the curve The factor is improved.
【０００６】[0006]
【実施例】以下、本発明の実施例を説明する。図１はア
モルファスシリコン太陽電池の基本構成を示している。
図において、ガラス基板上１に厚さが約0.45μｍ程度の
ＳｎＯ2を熱ＣＶＤ法により透明電極層２を形成する。
続いて、ｐｉｎ接合を有するアモルファスシリコン膜３
をプラズマＣＶＤ法を用いて約0.4μｍの厚さに形成す
る。その後に、スパッタ法にて酸化亜鉛膜を約0.1μｍ
の厚さで第１裏面電極４を形成し、次いで蒸着法にて銀
を約0.7μｍの厚さで第２裏面電極５を形成する。酸化
亜鉛膜をスパッタ法にて形成する際、そのターゲット材
にはアルミニウムが約２％程度含有されている。EXAMPLES Examples of the present invention will be described below. FIG. 1 shows the basic structure of an amorphous silicon solar cell.
In the figure, a transparent electrode layer 2 of SnO 2 having a thickness of about 0.45 μm is formed on a glass substrate 1 by a thermal CVD method.
Subsequently, the amorphous silicon film 3 having a pin junction
Is formed to a thickness of about 0.4 μm by using the plasma CVD method. After that, a zinc oxide film of about 0.1 μm is formed by the sputtering method.
To form the first back surface electrode 4 and then form the second back surface electrode 5 to a thickness of about 0.7 μm by vapor deposition. When the zinc oxide film is formed by the sputtering method, the target material contains about 2% aluminum.
【０００７】このアモルファスシリコン太陽電池の構造
において、ｎ型層（３−３）のアモルファスシリコン膜
と第１裏面電極４の酸化亜鉛膜とのオーミック接合は、
酸化亜鉛膜の高抵抗が原因で、接触特性が低下してい
る。そこで、裏面電極の形成後に温度約１５０0Ｃで熱
処理を行い、酸化亜鉛膜中のアルミニウムをｎ型層内に
拡散させる。これにより、オーミック接合は改善され、
ｎ層と第１裏面電極の酸化亜鉛層との接触特性が良くな
った。In the structure of this amorphous silicon solar cell, the ohmic contact between the amorphous silicon film of the n-type layer (3-3) and the zinc oxide film of the first back electrode 4 is
The contact resistance is deteriorated due to the high resistance of the zinc oxide film. Accordingly, a heat treatment at a temperature of about 0.99 0 C after the formation of the back electrode, to diffuse the aluminum in the zinc oxide film on the n-type layer. This improves the ohmic contact,
The contact characteristics between the n-layer and the zinc oxide layer of the first back electrode were improved.
【０００８】図２は、温度約１５０℃にて熱処理したと
きのアモルファスシリコン太陽電池の曲線因子の変化を
示している。この図から判るように、熱処理を約６０分
することで、性能を十分改善することができた。アモル
ファスシリコン太陽電池素子の従来型と本発明の特性比
較を表１に示する。本発明の太陽電池素子では、１００
ｍＷ／ｃｍ2の入射光の場合に１０．９％という高い変
換効率が得られた。また熱ＣＶＤ法にて第１裏面電極を
形成する際はアルミニウムが添加されていれば、同じよ
うな効果が得られる。FIG. 2 shows changes in the fill factor of an amorphous silicon solar cell when heat-treated at a temperature of about 150 ° C. As can be seen from this figure, the performance could be sufficiently improved by performing the heat treatment for about 60 minutes. Table 1 shows a characteristic comparison between the conventional amorphous silicon solar cell element and the present invention. In the solar cell element of the present invention, 100
A high conversion efficiency of 10.9% was obtained in the case of incident light of mW / cm 2 . Further, when aluminum is added when the first back electrode is formed by the thermal CVD method, the same effect can be obtained.
【０００９】 表１ 太陽電池 変換効率 開放電圧 短絡電流 曲線因子 種類 （％） （Ｖ） （ｍＡ／ｃｍ2） 従来型 １０.３ ０.８９ １７.９８ ０.６５ 本発明 １０.９ ０.８９ １７.９０ ０.６８Table 1 Conversion efficiency of solar cell Open circuit voltage Short circuit current Fill factor (%) (V) (mA / cm 2 ) Conventional type 10.3 0.89 17.98 0.65 Present invention 10.9 0.89 17.90 0.68
【００１０】[0010]
【発明の効果】以上説明したように、本発明によれば、
ｎ型アモルファスシリコン層上に、少なくともスパッタ
法で形成される第１裏面電極をもつ裏面電極の形成後に
熱処理を施すことにより、従来のものに比べて曲線因子
の改善が図られ、変換効率が向上されるアモルファスシ
リコン太陽電池の製造が可能となる。As described above, according to the present invention,
By performing heat treatment after forming a back electrode having at least a first back electrode formed by a sputtering method on the n-type amorphous silicon layer, the fill factor is improved and conversion efficiency is improved compared to the conventional one. It is possible to manufacture an amorphous silicon solar cell as described above.
【図面の簡単な説明】[Brief description of drawings]
【図１】 アモルファスシリコン太陽電池の基本構成図
である。FIG. 1 is a basic configuration diagram of an amorphous silicon solar cell.
【図２】 熱処理時間による曲線因子への依存性を示す
図である。FIG. 2 is a diagram showing the dependence of the heat treatment time on the fill factor.
１ ガラス基板、２ 透明絶縁層、３ アモルファスシ
リコン層、４ 第１裏面電極、５ 第２裏面電極1 glass substrate, 2 transparent insulating layer, 3 amorphous silicon layer, 4 first back electrode, 5 second back electrode
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１２月２１日[Submission date] December 21, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００３[Name of item to be corrected] 0003
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００３】[0003]
【発明が解決しようとする課題】ところで、変換効率の
向上を図るための一つの方法として、裏面電極を２層構
造にすることが知られている。すなわち、裏面電極はｎ
型層上に形成され、透過光を散乱させる第１の裏面電極
と該第１裏面電極内で散乱する光を完全に封じ込めるた
めの第２裏面電極から構成される。例えば、第１裏面電
極には酸化亜鉛を、また第２裏面電極にはアルミニウ
ム、銀、銅などが用いられている。しかし、酸化亜鉛の
特性が、例えば、抵抗が高い場合や電気伝導度が低い場
合は、酸化亜鉛によるシャント抵抗の増加や、ｎ層と酸
化亜鉛との接触抵抗が高くなり、太陽電池の変換効率に
影響を与えるという問題があった。本発明の目的は、酸
化亜鉛の特性を改善し、それによって、太陽電池の曲線
因子を改善することで、高効率なアモルファスシリコン
太陽電池の製造方法を提供することにある。By the way, it is known that the back electrode has a two-layer structure as one method for improving the conversion efficiency. That is, the back electrode is n
The first back surface electrode is formed on the mold layer and scatters the transmitted light, and the second back surface electrode for completely confining the light scattered in the first back surface electrode. For example, zinc oxide is used for the first back surface electrode, and aluminum, silver, copper or the like is used for the second back surface electrode. But of zinc oxide
If the characteristics are, for example, high resistance or low electrical conductivity.
In that case, there was a problem that the shunt resistance increased due to zinc oxide and the contact resistance between the n layer and zinc oxide increased, which affected the conversion efficiency of the solar cell. An object of the present invention, acid
Improves the properties of zinc oxide and thereby the curve of solar cells
It is to provide a highly efficient method for manufacturing an amorphous silicon solar cell by improving the factor .
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００７[Correction target item name] 0007
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００７】このアモルファスシリコン太陽電池の構造
において、ｎ型層（３−３）のアモルファスシリコン膜
と第１裏面電極４の酸化亜鉛膜とのオーミック接合は、
酸化亜鉛膜の高抵抗が原因で、シャント抵抗の増加ある
いはｎ型層との接触特性が低下している。そこで、裏面
電極形成後にアモルファスシリコン膜の堆積温度にほぼ
近い温度約150℃で熱処理を行った。これにより、アモ
ルファスシリコン太陽電池の曲線因子が改善され、変換
効率が向上した。そこでアモルファスシリコン太陽電池
の曲線因子の向上の原因を調べるため、熱処理する前と
した後でのアモルファスシリコン太陽電池の収集効率を
測定した。図３は、そのスペクトルを示している。な
お、熱処理する前とした後のデータがほとんど一致して
いるため、図では重なって描かれている。図３におい
て、波長が650ｎｍを超える長波長領域においての収集
効率には熱処理に関係なく変化が見られなかった。この
ことは、熱処理によるアモルファスシリコン太陽電池の
曲線因子の改善は、高抵抗な酸化亜鉛膜によるシャント
抵抗が原因であったことを意味し、ｎ型層と酸化亜鉛の
オーミック接合の改善ではなかったことがわかった。即
ち、熱処理することで、酸化亜鉛膜中に含まれるアルミ
ニウムが十分に膜中に拡散し、それによって、酸化亜鉛
膜が低抵抗化し、太陽電池の酸化亜鉛によるシャント抵
抗が低下し、曲線因子を改善することができた。 In the structure of this amorphous silicon solar cell, the ohmic contact between the amorphous silicon film of the n-type layer (3-3) and the zinc oxide film of the first back electrode 4 is
There is an increase in shunt resistance due to the high resistance of the zinc oxide film
Or the contact characteristics with the n-type layer are deteriorated. Therefore, the deposition temperature of the amorphous silicon film is almost
It was Tsu line to a heat treatment at a temperature close about 150 ℃. This makes ammo
Ruffus Silicon Solar Cell Fill Factor Improved and Converted
Efficiency improved. So amorphous silicon solar cells
To investigate the cause of the improvement of fill factor of
The collection efficiency of the amorphous silicon solar cell after
It was measured. FIG. 3 shows the spectrum. Na
Oh, the data before and after heat treatment are almost the same
Therefore, they are drawn overlapping in the figure. Smell in Figure 3
For collection in the long wavelength region where the wavelength exceeds 650 nm
No change was observed in the efficiency regardless of the heat treatment. this
That is, the heat treatment of amorphous silicon solar cells
The fill factor is improved by a shunt with a high resistance zinc oxide film.
It means that the resistance was the cause of the n-type layer and zinc oxide.
It turned out that it was not an improvement in ohmic contact. Immediately
After heat treatment, the aluminum contained in the zinc oxide film
The nickel is well diffused into the film, which causes zinc oxide
The resistance of the film is reduced, and the shunt resistance of the solar cell due to zinc oxide is increased.
The resistance was reduced and the fill factor could be improved.
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図３[Name of item to be corrected] Figure 3
【補正方法】追加[Correction method] Added
【補正内容】[Correction content]
【図３】 アモルファスシリコン太陽電池の収集効率の
スペクトルを示す図である。FIG. 3 is a diagram showing a spectrum of collection efficiency of an amorphous silicon solar cell.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図３[Name of item to be corrected] Figure 3
【補正方法】追加[Correction method] Added
【補正内容】[Correction content]
【図３】 [Figure 3]
Claims (2)
シリコン膜であるｐｉｎ接合構造を有するアモルファス
シリコン太陽電池の製造方法において、 前記ｎ型層の形成後に、ターゲット材中に金属をドープ
してスパッタ法にて第１裏面電極を形成する工程と、 前記第１裏面電極上に第２裏面電極を形成する工程と、 前記第２裏面電極を形成した後に熱処理を行う工程と、 を具備するアモルファスシリコン太陽電池の製造方法。1. A method of manufacturing an amorphous silicon solar cell having a pin junction structure in which an n-type layer is a microcrystalline silicon film by a plasma CVD method, wherein a target material is doped with a metal after the formation of the n-type layer. Forming a first back surface electrode by a sputtering method, forming a second back surface electrode on the first back surface electrode, and performing a heat treatment after forming the second back surface electrode. Method for producing amorphous silicon solar cell.
化亜鉛のターゲット材にアルミニウムが添加されている
ことを特徴とする請求項１記載のアモルファスシリコン
太陽電池の製造方法。2. The method for manufacturing an amorphous silicon solar cell according to claim 1, wherein the first back surface electrode is zinc oxide, and aluminum is added to a target material of the zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3344263A JPH05175528A (en) | 1991-12-26 | 1991-12-26 | Manufacture of amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3344263A JPH05175528A (en) | 1991-12-26 | 1991-12-26 | Manufacture of amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175528A true JPH05175528A (en) | 1993-07-13 |
Family
ID=18367891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3344263A Pending JPH05175528A (en) | 1991-12-26 | 1991-12-26 | Manufacture of amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175528A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100419383B1 (en) * | 1996-05-23 | 2004-06-04 | 에스케이 주식회사 | Method for fabricating p-i-n amorphous silicon solar cell |
| WO2006049003A1 (en) * | 2004-11-04 | 2006-05-11 | Kaneka Corporation | Process for producing thin-film photoelectric converter |
| US7671271B2 (en) | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
-
1991
- 1991-12-26 JP JP3344263A patent/JPH05175528A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100419383B1 (en) * | 1996-05-23 | 2004-06-04 | 에스케이 주식회사 | Method for fabricating p-i-n amorphous silicon solar cell |
| WO2006049003A1 (en) * | 2004-11-04 | 2006-05-11 | Kaneka Corporation | Process for producing thin-film photoelectric converter |
| US7671271B2 (en) | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
| US7838442B2 (en) | 2006-03-08 | 2010-11-23 | National Science And Technology Development Agency | Thin film solar cell and its fabrication |
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