JPH05175375A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH05175375A JPH05175375A JP3342590A JP34259091A JPH05175375A JP H05175375 A JPH05175375 A JP H05175375A JP 3342590 A JP3342590 A JP 3342590A JP 34259091 A JP34259091 A JP 34259091A JP H05175375 A JPH05175375 A JP H05175375A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- semiconductor pellet
- sealing body
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂封止型半導体装置
に関し、特に、半導体ペレットを樹脂封止体で封止する
樹脂封止型半導体装置に適用して有効な技術に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a technique effectively applied to a resin-encapsulated semiconductor device for encapsulating a semiconductor pellet with a resin encapsulant.
【０００２】[0002]
【従来の技術】樹脂封止型半導体装置例えばＱＦＰ（Ｑ
uad Ｆlat Ｐackage）構造を採用する樹脂封止型半導体
装置は半導体ペレット（半導体チップ）を樹脂封止体で
封止する。半導体ペレットの素子形成面は、記憶回路シ
ステムや論理回路システムが搭載されるとともに、これ
らの回路システムと外部装置とを電気的に接続する外部
端子（ボンディングパッド）が配列される。この半導体
ペレットの外部端子はワイヤを通してリードの内部リー
ドに電気的に接続される。内部リードは、半導体ペレッ
トと同様に樹脂封止体で封止され、この樹脂封止体の外
部に突出し配列される外部リードに一体にかつ電気的に
接続される。2. Description of the Related Art Resin-sealed semiconductor devices such as QFP ( Q
uad F lat P ackage) resin-sealed semiconductor device which employs the structure for sealing the semiconductor pellet (semiconductor chip) with a resin sealing body. A memory circuit system and a logic circuit system are mounted on the element forming surface of the semiconductor pellet, and external terminals (bonding pads) that electrically connect these circuit systems and an external device are arranged. The external terminal of the semiconductor pellet is electrically connected to the internal lead of the lead through a wire. The inner lead is sealed with a resin encapsulant like the semiconductor pellet, and is integrally and electrically connected to the outer lead protruding and arranged outside the resin encapsulant.
【０００３】前記半導体ペレットは現在のところ単結晶
珪素で形成されるものが主流である。この半導体ペレッ
トの素子形成面に配列される外部端子は、一般的に、回
路システム内の最上層の結線と同一材料のアルミニウ
ム、アルミニウム合金のいずれかで形成される。内部リ
ード、外部リードの夫々はＦｅ−Ｎｉ合金、Ｃｕ等の材
料で形成される。樹脂封止体は、トランスファモールド
法で成型され、例えばフェノール硬化型エポキシ系樹脂
で形成される。At present, most of the semiconductor pellets are formed of single crystal silicon. The external terminals arranged on the element formation surface of the semiconductor pellet are generally formed of either aluminum or aluminum alloy, which is the same material as the uppermost connection in the circuit system. Each of the inner lead and the outer lead is formed of a material such as Fe-Ni alloy or Cu. The resin encapsulant is molded by the transfer molding method, and is formed of, for example, phenol-curable epoxy resin.
【０００４】この種の樹脂封止型半導体装置は、内部リ
ード、ワイヤの夫々と樹脂封止体との間の接着力が低い
ので、夫々の間の界面領域に樹脂封止体の外部から半導
体ペレットの外部端子に至る水分浸入経路が発生する。
この樹脂封止体の外部から前記水分浸入経路を通して半
導体ペレットの外部端子に水分が浸入した場合、この外
部端子若しくはその周囲に延在する結線が腐食され、半
導体ペレットに搭載される回路システムと外部リードと
の間の電流経路の一部に断線不良が発生する。また、樹
脂封止型半導体装置の樹脂封止体（フェノール硬化型エ
ポキシ系樹脂）はそれ自体に水分透過性があるので、同
様に、半導体ペレットの外部端子若しくはその周囲に延
在する結線が腐食される。In this type of resin-sealed semiconductor device, the adhesive force between the internal leads and the wires and the resin-sealed body is low. A water entry path to the pellet's external terminals occurs.
When moisture enters the external terminals of the semiconductor pellet through the moisture entry path from the outside of the resin encapsulant, the external terminals or the wiring extending around the external terminals are corroded, and the circuit system mounted on the semiconductor pellet and the external A disconnection defect occurs in a part of the current path between the lead and the lead. In addition, since the resin-sealed body (phenol-curable epoxy resin) of the resin-sealed semiconductor device itself has moisture permeability, the external terminals of the semiconductor pellet or the wiring extending around it also corrodes. To be done.
【０００５】さらに、樹脂封止型半導体装置は、前述の
水分が半導体ペレット、樹脂封止体の夫々の間の界面領
域に存在すると、実装基板へ実装する際の半田リフロー
工程において、水分が気化膨張し、樹脂封止体にクラッ
クが発生する。この樹脂封止体のクラックの発生は、前
述と同様に樹脂封止型半導体装置の耐湿性の劣化を招く
ばかりでなく、樹脂封止型半導体装置の樹脂封止体の封
止能力をも低下する。Further, in the resin-encapsulated semiconductor device, when the above-mentioned water is present in the interface region between the semiconductor pellet and the resin-encapsulated body, the water is vaporized in the solder reflow process when mounting on the mounting board. The resin expands and cracks occur in the resin sealing body. The generation of cracks in the resin encapsulation body not only causes deterioration of the moisture resistance of the resin encapsulation type semiconductor device as described above, but also lowers the sealing ability of the resin encapsulation body of the resin encapsulation type semiconductor device. To do.
【０００６】このような樹脂封止型半導体装置の耐湿性
を向上する技術としては、半導体ペレットの素子形成面
にポリイミド系樹脂膜を塗布する技術が有効である。ポ
リイミド系樹脂膜は、流動性を有する状態において滴下
塗布法で塗布した後に、ベーク処理で硬化される。ポリ
イミド系樹脂膜は半導体ペレットの外部端子上において
開口され、この開口を通して、外部端子にワイヤがボン
ディングされる。ポリイミド系樹脂膜は、樹脂封止体つ
まりフェノール硬化型エポキシ系樹脂に比べて水分透過
率が小さく、樹脂封止型半導体装置の耐湿性を向上でき
る。また、ポリイミド系樹脂膜は、半導体ペレット、樹
脂封止体のいずれの間においても接着性が高いので、半
導体ペレット、樹脂封止体の夫々の間の境界領域での水
分の気化膨張を抑えられる。As a technique for improving the moisture resistance of such a resin-sealed semiconductor device, a technique of applying a polyimide resin film on the element forming surface of the semiconductor pellet is effective. The polyimide-based resin film is applied by a drop application method in a fluid state and then cured by a baking process. The polyimide resin film is opened on the external terminal of the semiconductor pellet, and the wire is bonded to the external terminal through this opening. The polyimide resin film has a smaller moisture permeability than the resin encapsulant, that is, the phenol-curable epoxy resin, and can improve the moisture resistance of the resin-encapsulated semiconductor device. Further, since the polyimide-based resin film has high adhesiveness between the semiconductor pellet and the resin encapsulant, it is possible to suppress vaporization and expansion of water in the boundary region between the semiconductor pellet and the resin encapsulant. ..
【０００７】なお、樹脂封止型半導体装置の解決すべき
技術課題については、例えば、日経マイクロデバイセ
ス、１９９１年２月号、第８９頁乃至第９７頁において
論じられている。The technical problems to be solved by the resin-encapsulated semiconductor device are discussed, for example, in Nikkei Micro Devices, February 1991, pp. 89-97.
【０００８】[0008]
【発明が解決しようとする課題】本発明者は、樹脂封止
型半導体装置の開発に先立ち、下記の問題点が生じるこ
とを見出した。The present inventor has found that the following problems occur prior to the development of a resin-encapsulated semiconductor device.
【０００９】（Ａ）前述の樹脂封止型半導体装置は、半
導体ペレットの素子形成面にポリイミド系樹脂膜が塗布
されているが、半導体ペレットの外部端子の領域におい
てはワイヤとのボンディングを行うための開口が存在す
る。つまり、半導体ペレットの外部端子、ワイヤ、内部
リードに沿った水分浸入経路は依然として存在する。こ
のため、根本的な耐湿性の改善は図られていないので、
樹脂封止型半導体装置は耐湿性が劣化する。(A) In the resin-encapsulated semiconductor device described above, the polyimide-based resin film is applied to the element forming surface of the semiconductor pellet, but in the area of the external terminal of the semiconductor pellet, bonding with a wire is performed. There is an opening. That is, there is still a water entry path along the external terminals, wires, and internal leads of the semiconductor pellet. Therefore, since the fundamental improvement in moisture resistance has not been achieved,
Moisture resistance of the resin-sealed semiconductor device deteriorates.
【００１０】（Ｂ）前記の樹脂封止型半導体装置は、半
導体ペレットの素子形成面に塗布されるポリイミド系樹
脂膜、樹脂封止体のいずれも高い硬度を有し、半導体ペ
レット、樹脂封止体若しくはポリイミド系樹脂膜の夫々
の間の境界領域で気化膨張した際の応力を吸収できな
い。このため、樹脂封止体にクラックが発生し、同様に
樹脂封止型半導体装置の耐湿性が劣化し、又汚染等に対
する封止能力が劣化する。(B) In the resin-encapsulated semiconductor device described above, both the polyimide resin film applied to the element forming surface of the semiconductor pellet and the resin encapsulant have high hardness. It cannot absorb the stress caused by vaporization and expansion in the boundary region between the body or the polyimide resin film. As a result, cracks occur in the resin encapsulant, and the moisture resistance of the resin-encapsulated semiconductor device also deteriorates, and the encapsulation ability against contamination and the like deteriorates.
【００１１】本発明の目的は、樹脂封止型半導体装置に
おいて、耐湿性を向上することが可能な技術を提供する
ことにある。An object of the present invention is to provide a technique capable of improving moisture resistance in a resin-sealed semiconductor device.
【００１２】本発明の他の目的は、樹脂封止型半導体装
置において、耐湿性を向上するとともに、封止能力を向
上することが可能な技術を提供することにある。Another object of the present invention is to provide a technique capable of improving the moisture resistance and the sealing ability of a resin-sealed semiconductor device.
【００１３】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述及び添付図面によって明らか
になるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１４】[0014]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば下
記のとおりである。Among the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.
【００１５】半導体ペレットの素子形成面に配置される
外部端子に内部リードが電気的に接続され、この半導体
ペレット及び内部リードが樹脂封止体で封止される樹脂
封止型半導体装置において、前記半導体ペレットの外部
端子と内部リードとの接続領域を含む、この半導体ペレ
ット、樹脂封止体の夫々の間に前記樹脂封止体に比べて
水分透過率が小さくかつヤング率が小さい内部封止体を
設ける。前記樹脂封止体はフェノール硬化型エポキシ系
樹脂で形成され、前記内部封止体はシリコーンゴムで形
成される。In the resin-sealed semiconductor device, the internal lead is electrically connected to an external terminal arranged on the element forming surface of the semiconductor pellet, and the semiconductor pellet and the internal lead are sealed with a resin sealing body. An internal sealing body including a connection region between an external terminal and an internal lead of the semiconductor pellet and having a smaller moisture permeability and a smaller Young's modulus between the semiconductor pellet and the resin sealing body than the resin sealing body. To provide. The resin encapsulant is formed of a phenol-curable epoxy resin, and the inner encapsulant is formed of silicone rubber.
【００１６】[0016]
【作用】上述した手段によれば、以下の作用効果が得ら
れる。 （Ａ）前記樹脂封止体内の内部リードから半導体ペレッ
トの外部端子に至るまでの水分浸入経路内に、樹脂封止
体に比べて水分透過率が小さい内部封止体を設けたの
で、樹脂封止体の外部から半導体ペレットの外部端号に
達する水分の浸入を防止し、外部端子の水分による腐食
を防止できる。この結果、樹脂封止型半導体装置の耐湿
性を向上できる。 （Ｂ）前記半導体ペレット、樹脂封止体の夫々の間の界
面領域に存在する若しくは浸透し溜った水分が半田リフ
ロー時等の高温時に気化膨張することに基づく応力が、
この半導体ペレット、樹脂封止体の夫々の界面領域にお
いて内部封止体で吸収できるので、樹脂封止体のクラッ
クの発生（レジンクラックの発生）を防止できる。この
結果、樹脂封止型半導体装置の耐湿性を向上できるとと
もに、封止能力を向上できる。According to the above-mentioned means, the following operational effects can be obtained. (A) Since the internal sealing body having a smaller moisture transmission rate than that of the resin sealing body is provided in the moisture penetration path from the internal lead in the resin sealing body to the external terminal of the semiconductor pellet, It is possible to prevent moisture from reaching the outer end of the semiconductor pellet from the outside of the stopper and prevent corrosion of the external terminals due to moisture. As a result, the moisture resistance of the resin-sealed semiconductor device can be improved. (B) The stress caused by the moisture existing or penetrating in the interface region between the semiconductor pellet and the resin encapsulant, which has accumulated and vaporized and expanded at a high temperature such as solder reflow,
Since the internal encapsulant can absorb the semiconductor pellets and the resin encapsulant in the respective interface regions, it is possible to prevent the resin encapsulant from cracking (resin cracking). As a result, the moisture resistance of the resin-encapsulated semiconductor device can be improved, and the sealing ability can be improved.
【００１７】以下、本発明の構成について、ＱＦＰ構造
を採用する樹脂封止型半導体装置に本発明を適用した、
実施例とともに説明する。With respect to the structure of the present invention, the present invention is applied to a resin-sealed semiconductor device adopting a QFP structure.
Description will be given together with examples.
【００１８】なお、実施例を説明するための全図におい
て、同一機能を有するものは同一符号を付け、その繰り
返しの説明は省略する。In all the drawings for explaining the embodiments, parts having the same functions are designated by the same reference numerals, and the repeated description thereof will be omitted.
【００１９】[0019]
【実施例】（実 施 例 １）本発明の実施例１であるＱ
ＦＰ構造を採用する樹脂封止型半導体装置の構成を図１
（断面図）、図２（斜視図）の夫々で示す。[Example] (Example 1) Q, which is Example 1 of the present invention
Figure 1 shows the structure of a resin-encapsulated semiconductor device that uses the FP structure.
(Cross-sectional view) and FIG. 2 (perspective view), respectively.
【００２０】図１、図２の夫々に示すように、ＱＦＰ構
造を採用する樹脂封止型半導体装置１は、タブ２Ａの表
面上に搭載された半導体ペレット５の素子形成面に配置
される外部端子５Ｐ、内部リード２Ｂの夫々が電気的に
接続され、これらが樹脂封止体８で封止される。前記樹
脂封止体８の外側面には前記内部リード２Ｂに電気的に
接続されかつ一体に構成された外部リード２Ｃが複数本
配列される。As shown in FIGS. 1 and 2, the resin-sealed semiconductor device 1 adopting the QFP structure is arranged on the element forming surface of the semiconductor pellet 5 mounted on the surface of the tab 2A. The terminal 5P and the internal lead 2B are electrically connected to each other, and these are sealed with the resin sealing body 8. A plurality of external leads 2C that are electrically connected to and integrally formed with the internal leads 2B are arranged on the outer surface of the resin encapsulant 8.
【００２１】前記半導体ペレット５は、平面形状が方形
状で形成され、単結晶珪素基板を主体に構成される。こ
の半導体ペレット５の素子形成面（図１中、上側表面）
は記憶回路システム若しくは論理回路システムが搭載さ
れる。半導体ペレット５の外部端子５Ｐは回路システム
が搭載された素子形成面に複数個配置される。外部端子
５Ｐは、回路システムの最上層の結線と同一材料、例え
ばアルミニウム、若しくはアルミニウム合金のいずれか
を主体に構成される。The semiconductor pellet 5 is formed in a rectangular shape in plan view, and is mainly composed of a single crystal silicon substrate. Element forming surface of the semiconductor pellet 5 (upper surface in FIG. 1)
Is equipped with a memory circuit system or a logic circuit system. A plurality of external terminals 5P of the semiconductor pellet 5 are arranged on the element formation surface on which the circuit system is mounted. The external terminals 5P are mainly composed of the same material as the wiring for the uppermost layer of the circuit system, for example, aluminum or aluminum alloy.
【００２２】前記半導体ペレット５はタブ２Ａ上に接着
層４を介在して固着される。接着層４は例えばＡｇペー
ストが使用される。The semiconductor pellet 5 is fixed on the tab 2A with the adhesive layer 4 interposed. For the adhesive layer 4, for example, Ag paste is used.
【００２３】前記半導体ペレット５の外部端子５Ｐ、内
部リード２Ｂの夫々はワイヤ６を通して電気的に接続さ
れる。ワイヤ６は、例えばＡｕワイヤが使用され、熱圧
着に超音波振動を併用したボンディング法でボンディン
グされる。The external terminals 5P of the semiconductor pellet 5 and the internal leads 2B are electrically connected through wires 6. As the wire 6, for example, an Au wire is used, and the wire 6 is bonded by a bonding method that uses ultrasonic vibration in combination with thermocompression bonding.
【００２４】前記タブ２Ａ、内部リード２Ｂ、外部リー
ド２Ｃの夫々はＦｅ−Ｎｉ合金（例えば、Ｎｉ含有量は
４２又は５０〔％〕）で形成される。また、これらはＣ
ｕ若しくはＣｕ系合金で形成してもよい。Each of the tab 2A, the inner lead 2B, and the outer lead 2C is made of an Fe-Ni alloy (for example, the Ni content is 42 or 50 [%]). Also, these are C
You may form with u or Cu type alloy.
【００２５】前記樹脂封止体８は、トランスファモール
ド法で成型され、例えばフェノール硬化型エポキシ系樹
脂が使用される。このフェノール硬化型エポキシ系樹脂
は例えばヤング率が１０００〜２０００〔Ｋｇ／ｍｍ
2 〕程度の比較的硬度の高いものが使用される。フェノ
ール硬化型エポキシ系樹脂は、通常フィラー（酸化珪素
粒）、可撓材（例えばシリコーンゴム）等が添加され、
紫外線の吸収、静電気の防止などを目的としてカーボン
粒も併せて添加される。The resin encapsulant 8 is molded by a transfer molding method and, for example, a phenol-curable epoxy resin is used. This phenol-curable epoxy resin has a Young's modulus of 1000 to 2000 [Kg / mm
2 ) The one with relatively high hardness is used. Phenol-curing epoxy resin is usually added with filler (silicon oxide particles), flexible material (eg silicone rubber),
Carbon particles are also added for the purpose of absorbing ultraviolet rays and preventing static electricity.
【００２６】このように構成されるＱＦＰ構造を採用す
る樹脂封止型半導体装置１は、図１に示すように、半導
体ペレット５、樹脂封止体８の夫々の間に内部封止体７
が構成される。この内部封止体７は、半導体ペレット５
の表面の露出する領域、特に半導体ペレット５の素子形
成面、外部端子５Ｐとワイヤ６との接続領域及びこのワ
イヤ６自体も含めた領域を被覆する。As shown in FIG. 1, the resin-encapsulated semiconductor device 1 adopting the QFP structure configured as described above has an internal encapsulant 7 between a semiconductor pellet 5 and a resin encapsulant 8, respectively.
Is configured. This internal sealing body 7 is a semiconductor pellet 5.
The exposed area of the surface of the device, especially the element forming surface of the semiconductor pellet 5, the connection area between the external terminal 5P and the wire 6 and the area including the wire 6 itself are covered.
【００２７】内部封止体７は、前記樹脂封止体８に比べ
て水分透過率が小さく、しかもヤング率が小さい材料、
具体的にはシリコーンゴムが使用される。例えば、樹脂
封止体８のフェノール硬化型エポキシ系樹脂は、温度２
５〔℃〕、相対湿度約４０〔％〕の条件下において、約
３００〜３５０時間で１.３〜１.４〔ｍｍ〕の厚さを水
分が透過するのに対して、シリコーンゴムは水分がほと
んど透過しない。しかも、シリコーンゴムは、０.２〜
０.３〔Ｋｇ／ｍｍ2 〕程度の極めて小さいヤング率を
有し（軟らかく）、フェノール硬化型エポキシ系樹脂に
比べて数千分の１のヤング率を有する。The inner sealing body 7 is made of a material having a smaller moisture permeability and a smaller Young's modulus than the resin sealing body 8.
Specifically, silicone rubber is used. For example, the phenol-curable epoxy resin of the resin sealing body 8 has a temperature of 2
Under the conditions of 5 [° C.] and relative humidity of about 40 [%], moisture permeates through a thickness of 1.3 to 1.4 [mm] in about 300 to 350 hours, whereas silicone rubber has moisture content. Hardly penetrates. Moreover, silicone rubber is 0.2-
It has an extremely small Young's modulus of about 0.3 [Kg / mm 2 ] (soft) and has a Young's modulus of several thousandth of that of a phenol-curable epoxy resin.
【００２８】また、内部封止体７のシリコーンゴムは、
前述のようにヤング率が小さく、弾力性を有している
が、ゼリー状のシリコーンゲルと異なり、塗布しベーク
処理をして硬化した後の形状の変化がない。つまり、内
部封止体７は、例えばトランスファモールド工程におい
て、樹脂封止体８の成型時、具体的には流動性樹脂の金
型キャビティ内への注入時に、半導体ペレット５の素子
形成面上の肉厚が薄くなる、露出する等の形状の変化を
防止できる。The silicone rubber of the inner sealing body 7 is
As described above, it has a small Young's modulus and elasticity, but unlike jelly-like silicone gel, there is no change in shape after coating, baking and curing. That is, the inner sealing body 7 is formed on the element forming surface of the semiconductor pellet 5 when the resin sealing body 8 is molded, for example, when the fluid resin is injected into the mold cavity in the transfer molding process. It is possible to prevent a change in shape such as thinning or exposure.
【００２９】また、内部封止体７のシリコーンゴムは、
基本的に半導体ペレット５の樹脂封止体８で被覆される
領域の全域に設けられ、樹脂封止体８からの応力をほぼ
すべて吸収できる。The silicone rubber of the inner sealing body 7 is
Basically, it is provided over the entire area of the semiconductor pellet 5 covered with the resin encapsulation body 8, and almost all the stress from the resin encapsulation body 8 can be absorbed.
【００３０】内部封止体７は、半導体ペレット５の外周
囲であって、タブ２Ａの縁部に沿って配置されたダム部
２Ｄで周囲を規定された領域内において設けられる。ダ
ム部２Ｄは、例えばタブ２Ａ等と同様に、Ｆｅ−Ｎｉ合
金で形成する。ダム部２Ｄは、内部封止体７を充填した
際に、内部封止体７で半導体ペレット５の素子形成面、
外部端子５Ｐ等が充分に被覆できる程度の高さ、例えば
半導体ペレット５の厚さと同程度の高さをもって構成さ
れる。ダム部２Ｄは接着層３例えばＡｇペーストを介在
してタブ２Ａの表面に固着される。The inner sealing body 7 is provided on the outer periphery of the semiconductor pellet 5 within a region defined by the dam portion 2D arranged along the edge of the tab 2A. The dam portion 2D is formed of a Fe—Ni alloy similarly to the tab 2A, for example. The dam portion 2D is formed on the element forming surface of the semiconductor pellet 5 by the inner sealing body 7 when the inner sealing body 7 is filled.
The height is such that the external terminals 5P and the like can be sufficiently covered, for example, the height that is approximately the same as the thickness of the semiconductor pellet 5. The dam portion 2D is fixed to the surface of the tab 2A via the adhesive layer 3 such as Ag paste.
【００３１】本実施例の樹脂封止型半導体装置１は、ダ
ム部２Ｄ、ワイヤ６の夫々の間の接触をより防止する目
的で、内部リード２Ｂの位置に比べてタブ２Ａの位置を
低くしたタブ下げ構造が採用される。In the resin-encapsulated semiconductor device 1 of this embodiment, the position of the tab 2A is made lower than the position of the inner lead 2B for the purpose of preventing contact between the dam portion 2D and the wire 6. A tab lowering structure is adopted.
【００３２】このように、半導体ペレット５の素子形成
面に配置される外部端子５Ｐに内部リード２Ｂが電気的
に接続され、この半導体ペレット５及び内部リード２Ｂ
が樹脂封止体８で封止されるＱＦＰ構造を採用する樹脂
封止型半導体装置１において、前記半導体ペレット５の
外部端子５Ｐと内部リード２Ｂとの接続領域を含む、こ
の半導体ペレット５、樹脂封止体８の夫々の間に前記樹
脂封止体８に比べて水分透過率が小さくかつヤング率が
小さい内部封止体７を設ける。前記樹脂封止体８はフェ
ノール硬化型エポキシ系樹脂で形成され、前記内部封止
体７はシリコーンゴムで形成される。この構成によれ
ば、以下の作用効果が得られる。（Ａ）前記樹脂封止体
８内の内部リード２Ｂから半導体ペレット５の外部端子
５Ｐに至るまでの水分浸入経路内に、樹脂封止体８に比
べて水分透過率が小さい内部封止体７を設けたので、樹
脂封止体８の外部から半導体ペレット５の外部端号５Ｐ
に達する水分の浸入を防止し、外部端子５Ｐ若しくはそ
の周囲に延在する配線の水分による腐食を防止できる。
この結果、ＱＦＰ構造を採用する樹脂封止型半導体装置
１の耐湿性を向上できる。（２）前記半導体ペレット
５、樹脂封止体８の夫々の間の界面領域に存在する若し
くは浸透し溜った水分が半田リフロー時等の高温時に気
化膨張することに基づく応力が、この半導体ペレット
５、樹脂封止体８の夫々の界面領域において内部封止体
７で吸収できるので、樹脂封止体８のクラックの発生を
防止できる。この結果、ＱＦＰ構造を採用する樹脂封止
型半導体装置１の耐湿性を向上できるとともに、封止能
力を向上できる。In this way, the internal lead 2B is electrically connected to the external terminal 5P arranged on the element forming surface of the semiconductor pellet 5, and the semiconductor pellet 5 and the internal lead 2B are connected.
In the resin-encapsulated semiconductor device 1 adopting the QFP structure in which is encapsulated by the resin encapsulant 8, the semiconductor pellet 5, including the connection region between the external terminal 5P of the semiconductor pellet 5 and the internal lead 2B, the resin An internal sealing body 7 having a smaller moisture permeability and a smaller Young's modulus than the resin sealing body 8 is provided between the sealing bodies 8. The resin encapsulant 8 is formed of a phenol-curable epoxy resin, and the inner encapsulant 7 is formed of silicone rubber. According to this configuration, the following operational effects can be obtained. (A) In the moisture intrusion route from the internal lead 2B in the resin encapsulation body 8 to the external terminal 5P of the semiconductor pellet 5, the inner encapsulation body 7 having a smaller moisture permeability than the resin encapsulation body 8 is provided. Since the resin sealing body 8 is provided with the external end 5P of the semiconductor pellet 5,
It is possible to prevent the invasion of moisture reaching to the external terminal 5P and to prevent the corrosion of the wiring extending to the external terminal 5P or the periphery thereof due to the moisture.
As a result, the moisture resistance of the resin-encapsulated semiconductor device 1 that employs the QFP structure can be improved. (2) The stress caused by the moisture existing in the interface region between the semiconductor pellet 5 and the resin encapsulant 8 or permeated and accumulated to vaporize and expand at a high temperature such as solder reflow is caused. Since the internal sealing bodies 7 can absorb the respective interface regions of the resin sealing body 8, the generation of cracks in the resin sealing body 8 can be prevented. As a result, the moisture resistance of the resin-encapsulated semiconductor device 1 that employs the QFP structure can be improved, and the sealing ability can be improved.
【００３３】（実 施 例 ２）本実施例２は、前述のＱ
ＦＰ構造を採用する樹脂封止型半導体装置において、内
部封止体の形状を変えた、又は内部封止体の保持方法を
変えた、本発明の第２実施例である。(Execution example 2) With this execution example 2, the above-mentioned Q
It is a second embodiment of the present invention in which the shape of the internal sealing body is changed or the method of holding the internal sealing body is changed in the resin-sealed semiconductor device adopting the FP structure.
【００３４】本発明の実施例２であるＱＦＰ構造を採用
する樹脂封止型半導体装置の構成を図３（断面図）、図
４（断面図）の夫々で示す。The configuration of a resin-sealed semiconductor device adopting the QFP structure according to the second embodiment of the present invention is shown in FIG. 3 (cross-sectional view) and FIG. 4 (cross-sectional view), respectively.
【００３５】図３に示すＱＦＰ構造を採用する樹脂封止
型半導体装置１は、樹脂封止体８の内部において、半導
体ペレット５、タブ２Ａ、内部リード２Ｂのワイヤ６側
の先端部及びワイヤ６が内部封止体７で被覆（モール
ド）される。In the resin-sealed semiconductor device 1 adopting the QFP structure shown in FIG. 3, inside the resin-sealed body 8, the semiconductor pellet 5, the tab 2A, the tip of the inner lead 2B on the wire 6 side and the wire 6 are provided. Is covered (molded) with the internal sealing body 7.
【００３６】図４に示すＱＦＰ構造を採用する樹脂封止
型半導体装置１は、前述の実施例１のダム部２Ｄを廃止
し、変わりにタブ２Ａの周囲の表面に内部封止体７を堰
き止める溝２ａが構成される。In the resin-sealed semiconductor device 1 adopting the QFP structure shown in FIG. 4, the dam portion 2D of the first embodiment described above is eliminated, and instead the inner sealing body 7 is dammed on the surface around the tab 2A. The stopping groove 2a is formed.
【００３７】図３、図４のいずれのＱＦＰ構造を採用す
る樹脂封止型半導体装置１も、前述の実施例１と同様の
作用効果が得られる。The resin-encapsulated semiconductor device 1 employing the QFP structure shown in FIG. 3 or FIG. 4 has the same effects as those of the first embodiment.
【００３８】（実 施 例 ３）本実施例３は、半導体ペ
レットの外部端子とそれに接続されるワイヤとの接続領
域において、水分浸入経路を抑えた、本発明の第３実施
例である。(Embodiment 3) Embodiment 3 is a third embodiment of the present invention in which the moisture infiltration route is suppressed in the connection region between the external terminal of the semiconductor pellet and the wire connected thereto.
【００３９】本発明の実施例３であるＱＦＰ構造を採用
する樹脂封止型半導体装置の半導体ペレットの構造を図
５（図５（Ａ）は要部拡大断面図、図５（Ｂ）は要部拡
大平面図）で示す。The structure of the semiconductor pellet of the resin-encapsulated semiconductor device adopting the QFP structure according to the third embodiment of the present invention is shown in FIG. 5 (FIG. 5A is an enlarged sectional view of an essential part, and FIG. Partial enlarged plan view).
【００４０】図５に示すように、ＱＦＰ構造を採用する
樹脂封止型半導体装置１の半導体ペレット５の外部端子
５Ｐは同一導電層に形成された内部配線５６と電気的に
接続され、この内部配線５６は下層に形成された内部配
線５４に電気的に接続される。内部配線５４、５６、外
部端子５Ｐの夫々は例えばアルミニウム若しくはアルミ
ニウム合金で形成される。内部配線５４は単結晶珪素で
形成される半導体基板５１の上部に素子分離絶縁膜５
２、層間絶縁膜５３の夫々を介在して配置され、内部配
線５６は層間絶縁膜５５を介在して配置される。内部配
線５６、５４の夫々は層間絶縁膜５５に形成された接続
孔５５Ａを通して電気的に接続される。As shown in FIG. 5, the external terminal 5P of the semiconductor pellet 5 of the resin-sealed semiconductor device 1 adopting the QFP structure is electrically connected to the internal wiring 56 formed in the same conductive layer, and the inside The wiring 56 is electrically connected to the internal wiring 54 formed in the lower layer. Each of the internal wirings 54 and 56 and the external terminal 5P is formed of, for example, aluminum or aluminum alloy. The internal wiring 54 is formed of single crystal silicon and is provided on the semiconductor substrate 51.
2, the interlayer insulating film 53 is interposed, and the internal wiring 56 is arranged with the interlayer insulating film 55 interposed. Each of the internal wirings 56 and 54 is electrically connected through a connection hole 55A formed in the interlayer insulating film 55.
【００４１】前記外部端子５Ｐは平面形状が実質的に正
方形で形成され、この外部端子５Ｐは、その表面上を被
覆する最終保護膜５７及び５８に形成されたボンディン
グ開口５８Ａを通してワイヤ６に接続される。The external terminal 5P is formed in a substantially square plan shape, and the external terminal 5P is connected to the wire 6 through a bonding opening 58A formed in the final protective films 57 and 58 covering the surface thereof. It
【００４２】最終保護膜５７は例えば耐湿性の向上を目
的としてプラズマＣＶＤ法で堆積した窒化珪素膜の単層
若しくはそれを主体とした積層で構成される。最終保護
膜５８は、外部応力の吸収を目的として、若しくは半導
体ペレット５の素子形成面に記憶回路システムが搭載さ
れる場合はα線ソフトエラー耐圧の向上を目的として、
ポリイミド系樹脂膜で構成される。The final protective film 57 is composed of, for example, a single layer of a silicon nitride film deposited by a plasma CVD method for the purpose of improving moisture resistance or a laminated layer mainly composed of the silicon nitride film. The final protective film 58 is for the purpose of absorbing external stress, or when the storage circuit system is mounted on the element forming surface of the semiconductor pellet 5, for the purpose of improving the α-ray soft error withstand voltage.
It is composed of a polyimide resin film.
【００４３】ワイヤ６は、ボールボンディング方式が採
用され、外部端子５Ｐに接続される側にワイヤ６の直径
に比べて大きい直径を有するボールを形成し、このボー
ルが外部端子５Ｐに接続される。The wire 6 adopts a ball bonding method, and a ball having a diameter larger than that of the wire 6 is formed on the side connected to the external terminal 5P, and this ball is connected to the external terminal 5P.
【００４４】前記最終保護膜５７、５８の夫々に形成さ
れるボンディング開口５８Ａは、その平面形状がワイヤ
６のボールに比べて若干大きい直径を有する相似形状で
構成される。この結果、ボンディング開口５８Ａの内壁
とワイヤ６のボールとの間の隙間がボールの周囲の全域
において均等に形成され、ボンディング開口５８Ａの平
面形状を正方形状とした場合に比べて隙間を小さくでき
る。つまり、ボンディング開口５８Ａにおいて、水分浸
入経路を小さくでき、ＱＦＰ構造を採用する樹脂封止型
半導体装置１の耐湿性を向上できる。The bonding opening 58A formed in each of the final protective films 57 and 58 has a similar planar shape whose diameter is slightly larger than that of the ball of the wire 6. As a result, the gap between the inner wall of the bonding opening 58A and the ball of the wire 6 is formed uniformly over the entire circumference of the ball, and the gap can be made smaller than in the case where the bonding opening 58A has a square planar shape. That is, in the bonding opening 58A, the water entry path can be made small, and the moisture resistance of the resin-encapsulated semiconductor device 1 employing the QFP structure can be improved.
【００４５】以上、本発明者によってなされた発明を、
前記実施例に基づき具体的に説明したが、本発明は、前
記実施例に限定されるものではなく、その要旨を逸脱し
ない範囲において種々変更可能であることは勿論であ
る。As described above, the invention made by the present inventor is
Although the specific description has been given based on the above-mentioned embodiment, the present invention is not limited to the above-mentioned embodiment, and needless to say, various modifications can be made without departing from the scope of the invention.
【００４６】例えば、本発明は、ＱＦＰ構造を採用する
樹脂封止型半導体装置に限らず、半導体ペレットの外部
端子と内部リードとが電気的に接続され、これらが樹脂
封止体で封止される他の構造の樹脂封止型半導体装置に
広く適用できる。For example, the present invention is not limited to the resin-sealed semiconductor device adopting the QFP structure, but the external terminals of the semiconductor pellet and the internal leads are electrically connected, and these are sealed with the resin-sealed body. It can be widely applied to resin-sealed semiconductor devices having other structures.
【００４７】[0047]
【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば、下
記のとおりである。The effects obtained by the representative ones of the inventions disclosed in this application will be briefly described as follows.
【００４８】樹脂封止型半導体装置において、耐湿性を
向上できる。Moisture resistance can be improved in the resin-sealed semiconductor device.
【００４９】樹脂封止型半導体装置において、耐湿性を
向上できるとともに、封止能力を向上できる。In the resin-sealed semiconductor device, it is possible to improve the moisture resistance and the sealing ability.
【図１】 本発明の実施例１である樹脂封止型半導体装
置の断面図。FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device that is Embodiment 1 of the present invention.
【図２】 前記樹脂封止型半導体装置の斜視図。FIG. 2 is a perspective view of the resin-sealed semiconductor device.
【図３】 本発明の実施例２である樹脂封止型半導体装
置の断面図。FIG. 3 is a sectional view of a resin-sealed semiconductor device that is Embodiment 2 of the present invention.
【図４】 他の樹脂封止型半導体装置の断面図。FIG. 4 is a cross-sectional view of another resin-sealed semiconductor device.
【図５】 本発明の実施例３である樹脂封止型半導体装
置の半導体ペレットであり、（Ａ）は断面図、（Ｂ）は
平面図。5A and 5B are semiconductor pellets of a resin-encapsulated semiconductor device that is Embodiment 3 of the present invention, in which FIG. 5A is a sectional view and FIG.
１…樹脂封止型半導体装置、２Ａ…タブ、２Ｂ…内部リ
ード、２Ｃ…外部リード、２Ｄ…ダム、５…半導体ペレ
ット、５Ｐ…外部端子、６…ワイヤ、７…内部封止体
（シリコーンゴム）、８…樹脂封止体、５７，５８…最
終保護膜、５８Ａ…ボンディング開口。DESCRIPTION OF SYMBOLS 1 ... Resin-sealed semiconductor device, 2A ... Tab, 2B ... Internal lead, 2C ... External lead, 2D ... Dam, 5 ... Semiconductor pellet, 5P ... External terminal, 6 ... Wire, 7 ... Internal sealing body (silicone rubber) ), 8 ... Resin sealing body, 57, 58 ... Final protective film, 58A ... Bonding opening.
Claims (2)
る外部端子に内部リードが電気的に接続され、この半導
体ペレット及び内部リードが樹脂封止体で封止される樹
脂封止型半導体装置において、前記半導体ペレットの外
部端子と内部リードとの接続領域を含む、この半導体ペ
レット、樹脂封止体の夫々の間に前記樹脂封止体に比べ
て水分透過率が小さくかつヤング率が小さい内部封止体
を設ける。1. A resin-encapsulated semiconductor device in which an internal lead is electrically connected to an external terminal arranged on an element formation surface of a semiconductor pellet, and the semiconductor pellet and the internal lead are encapsulated with a resin encapsulant. An internal seal having a smaller moisture permeability and a smaller Young's modulus than the resin encapsulant between each of the semiconductor pellet and the resin encapsulant, including a connection region between the external terminal of the semiconductor pellet and an internal lead. Provide a stopper.
ノール硬化型エポキシ系樹脂で形成され、前記内部封止
体はシリコーンゴムで形成される。2. The resin encapsulant according to claim 1 is formed of a phenol-curable epoxy resin, and the inner encapsulant is formed of silicone rubber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3342590A JPH05175375A (en) | 1991-12-25 | 1991-12-25 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3342590A JPH05175375A (en) | 1991-12-25 | 1991-12-25 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175375A true JPH05175375A (en) | 1993-07-13 |
Family
ID=18354947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3342590A Pending JPH05175375A (en) | 1991-12-25 | 1991-12-25 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175375A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007148398A1 (en) * | 2006-06-22 | 2007-12-27 | Fujitsu Limited | Resin-sealed module, optical module and method of resin sealing |
| WO2014103133A1 (en) | 2012-12-28 | 2014-07-03 | 富士電機株式会社 | Semiconductor device |
| JP2015231027A (en) * | 2014-06-06 | 2015-12-21 | 住友電気工業株式会社 | Semiconductor device |
-
1991
- 1991-12-25 JP JP3342590A patent/JPH05175375A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007148398A1 (en) * | 2006-06-22 | 2007-12-27 | Fujitsu Limited | Resin-sealed module, optical module and method of resin sealing |
| WO2014103133A1 (en) | 2012-12-28 | 2014-07-03 | 富士電機株式会社 | Semiconductor device |
| US9852968B2 (en) | 2012-12-28 | 2017-12-26 | Fuji Electric Co., Ltd. | Semiconductor device including a sealing region |
| JP2015231027A (en) * | 2014-06-06 | 2015-12-21 | 住友電気工業株式会社 | Semiconductor device |
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