JPH0517179B2 - - Google Patents
Info
- Publication number
- JPH0517179B2 JPH0517179B2 JP62070213A JP7021387A JPH0517179B2 JP H0517179 B2 JPH0517179 B2 JP H0517179B2 JP 62070213 A JP62070213 A JP 62070213A JP 7021387 A JP7021387 A JP 7021387A JP H0517179 B2 JPH0517179 B2 JP H0517179B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- impurity element
- cristobalite
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052906 cristobalite Inorganic materials 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- -1 sodium alkali metal compound Chemical class 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/04—Re-forming tubes or rods
- C03B23/047—Re-forming tubes or rods by drawing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、高温熱処理用の半導体工業用石英ガ
ラス製品及びその製造方法に係り、特に半導体ウ
エハの熱処理工程に用いられる炉芯管やベルジヤ
その他の石英ガラス製治具に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to quartz glass products for the semiconductor industry for high-temperature heat treatment and a method for manufacturing the same, and particularly relates to quartz glass products for the semiconductor industry used in heat treatment of semiconductor wafers, such as furnace core tubes, bell gears, etc. used in the heat treatment process of semiconductor wafers. Regarding a quartz glass jig.
「従来の技術」
半導体ウエハの熱処理工程に用いられる炉芯管
等には、純度が優れていて且つ汚染されにくい透
明石英ガラス管を用いて形成されているが、例え
ば1100℃前後の高温下で熱処理を行う拡散炉等に
前記石英ガラス管を使用した場合においては熱変
形を起こし易く、この為使用寿命が短くなるとい
う欠点を有していた。``Prior art'' Furnace core tubes used in the heat treatment process of semiconductor wafers are made of transparent quartz glass tubes, which have excellent purity and are resistant to contamination. When the quartz glass tube is used in a diffusion furnace or the like for heat treatment, it tends to be thermally deformed, which has the disadvantage of shortening its service life.
一方、石英ガラス材は非晶質物質であるため、
結晶性物質と比較して幾つかの利点を有している
が、欠点として不純物等にアルカリ金属等の一価
陽イオンに弱く、この為、前記透明石英ガラス管
を用いた炉芯管構造では、拡散炉内のナトリウム
アルカリ金属の化合物が前記炉芯管外周面に付着
した場合、高温下で前記金属元素が内部へ拡散・
侵入し、該侵入不純物金属が炉芯管を通過して半
導体ウエハ等の被処理物にまで悪影響を及ぼす場
合もある。 On the other hand, since quartz glass material is an amorphous material,
Although it has several advantages compared to crystalline materials, its disadvantage is that it is susceptible to impurities and monovalent cations such as alkali metals. If a sodium alkali metal compound in the diffusion furnace adheres to the outer circumferential surface of the furnace core tube, the metal element will diffuse into the interior at high temperatures.
In some cases, the intruding impurity metal may pass through the furnace core tube and have an adverse effect on objects to be processed such as semiconductor wafers.
かかる欠点と改良する為に例えば、特公昭47−
1477号において、前記透明石英外周面に、石英の
変態結晶が結合された微細結晶層、特にクリスト
バライト層を形成し、該クリストバライト層によ
り前記不純物の侵入を阻止するとともに、高温下
における前記石英管の変形を防止せんとした技術
が提案されている。 In order to improve this shortcoming, for example,
No. 1477, a fine crystal layer, in particular a cristobalite layer, in which transformed crystals of quartz are combined is formed on the outer circumferential surface of the transparent quartz, and the cristobalite layer prevents the impurities from entering, and also prevents the quartz tube from entering at high temperatures. Techniques have been proposed to prevent deformation.
「発明が解決しようとする問題点」
そしてこのようなクリストバライト層を形成す
る方法として、前記公報中に粉末状の最純粋のク
リストバライト石を吹付けた後、火炎により又は
加熱炉内で石英ガラス管表面に焼付ける旨記載さ
れているが、かかる形成方法では、前記粉末状ク
リストバライト石を吹付ける際に付着ムラが生じ
やすく、出来上りのクリストバライト層の厚さが
不均一になつて耐熱性にバラツキを生じ、必ずし
も前記欠点を円滑に解消する事が出来なかつた。``Problems to be Solved by the Invention'' As a method for forming such a cristobalite layer, the purest cristobalite stone in powder form is sprayed onto a quartz glass tube by flame or in a heating furnace. Although it is described that the surface is baked, this formation method tends to cause uneven adhesion when the powdered cristobalite stone is sprayed, and the thickness of the finished cristobalite layer becomes uneven, leading to variations in heat resistance. Therefore, it has not always been possible to smoothly eliminate the above-mentioned drawbacks.
又前記製法では一般に前記粉末状クリストバラ
イト石を吹付けた後、該石英ガラス管を1600〜
1800℃前後まで加熱して成形を行う為に、該加熱
成形中に前記微細結晶層が成長し発現してしま
い、この結果溶接等の作業が不可能になつてしま
つたり、クリストバライト化が進行してクラツク
が発生したりする場合もあつた。 In addition, in the above manufacturing method, after spraying the powdered cristobalite stone, the quartz glass tube is generally
Since forming is performed by heating to around 1800℃, the above-mentioned fine crystal layer grows and appears during the heat forming, making it impossible to perform work such as welding, and progressing to cristobalite formation. In some cases, cracks occurred.
而も前記微細結晶層は常温ではクリストバライ
トのβ→α転移による微細なクラツクにより白色
化し不透明状態にある為に、製品出荷時点で、石
英ガラス管本体側に発生したクラツクや不純物の
混入を目視又は外観検査で判別する事が不可能と
なり、これらの不純物を含んだ製品が出荷されて
しまう危険性があつた。 However, at room temperature, the microcrystalline layer becomes white and opaque due to microscopic cracks caused by the β→α transition of cristobalite. Therefore, at the time of product shipment, cracks and impurity contamination on the quartz glass tube body side should be visually inspected or inspected. It became impossible to distinguish by visual inspection, and there was a risk that products containing these impurities would be shipped.
かかる欠点を解消する為に、加熱成形後に粉末
状のクリストバライト石の吹付けを行う方法も考
えられるが、かかる方法では、出荷前に行われる
フツ化水素洗浄工程時に前記クリストバライト石
が溶解してしまい、意味をなさなくなつてしま
う。 In order to eliminate this drawback, a method of spraying powdered cristobalite stone after heat molding may be considered, but with this method, the cristobalite stone would dissolve during the hydrogen fluoride cleaning process that is performed before shipping. , it becomes meaningless.
一方、前記従来技術のように粉末状のクリスト
バライト石の吹付けを行わず、SiO2の外に追加
の元素を含む溶解体を前記石英ガラス管表面に蒸
着させた後、熱処理をする方法（特公昭52−
10467号）も提案されているが、かかる従来技術
は単に付着ムラを防止し得るのみで、やはり石英
ガラス管表面に、微細結晶層を成長する核として
機能する溶解体が顕在的に存在する為に、加熱形
成時の短時間の加熱により前記微細結晶層が発現
してしまい、出荷時の検査や溶接作業が困難にな
るという問題点は何等解消し得ない。 On the other hand, unlike the prior art, powdered cristobalite stone is not sprayed, but instead a melt containing additional elements in addition to SiO 2 is deposited on the surface of the quartz glass tube, followed by heat treatment. Kosho 52-
No. 10467) has also been proposed, but this conventional technique can only prevent uneven adhesion, and because there is obviously a dissolved material on the surface of the quartz glass tube that functions as a nucleus for growing a fine crystal layer. Furthermore, the problem that the microcrystalline layer develops due to short-time heating during hot forming, making inspection and welding work difficult at the time of shipment, cannot be solved in any way.
本発明はかかる従来技術の欠点に鑑み、1100℃
を越えるの高温下で熱処理を行う場合においても
熱変形や不純物の侵入を効果的に阻止するクリス
トバライト層の形成を可能にしつつ、且つ加熱成
型工程及び溶接作業時においては前記クリストバ
ライト層の発現を防止し、更には製品出荷時の検
査の容易化を図つた石英ガラス製品を提供する事
を目的とする。 In view of the drawbacks of the prior art, the present invention provides
It enables the formation of a cristobalite layer that effectively prevents thermal deformation and impurity penetration even when heat treatment is performed at temperatures exceeding Furthermore, it is an object of the present invention to provide a quartz glass product that facilitates inspection at the time of product shipment.
又本発明の他の目的とする所は、製品出荷まで
の加熱成型工程中に、前記微細結晶層が発現する
のを防止し、透明状態で出荷可能な高温熱処理用
の石英ガラス製品の製造方法を提供する事を目的
とする。 Another object of the present invention is to provide a method for manufacturing a quartz glass product for high-temperature heat treatment, which prevents the formation of the microcrystalline layer during the heat molding process up to product shipment, and allows shipment in a transparent state. The purpose is to provide.
「第１発明の要旨」
本発明はかかる技術的課題を達成する為に、
前記ガラス材表面層に直接クリストバライト
化を誘起する核となる、拡散速度の遅い不純物
元素が均一にドーピングされている点、
製品完成時点においては前記不純物元素を核
とするクリストバライト層が発現しておらず、
透明状態を維持している点、
を必須構成要件とする石英ガラス製品を提案す
る。"Summary of the First Invention" In order to achieve the above technical problem, the present invention has the following features: The surface layer of the glass material is uniformly doped with an impurity element having a slow diffusion rate, which serves as a nucleus for directly inducing cristobalite formation. , At the time of product completion, a cristobalite layer with the impurity element as the nucleus has not appeared,
We propose a quartz glass product that maintains a transparent state as an essential component.
この場合前記不純物元素には、一般に半導体毒
とならずに拡散速度の遅い、Al、Ca、Zn、Mg、
Zr、Sn、Ｐ、Sb等の元素が適当であり、この内
特に汎用性等の面からアルミニウム元素がは最も
好適である。 In this case, the impurity elements include Al, Ca, Zn, Mg, which generally do not poison semiconductors and have a slow diffusion rate.
Elements such as Zr, Sn, P, and Sb are suitable, and among these, aluminum is the most suitable from the viewpoint of versatility.
「第１発明の効果」
かかる発明によれば、製品完成時点又は製品出
荷時点までは、不純物元素が表面層に単にドーピ
ングされているのみで、透明の通常のガラス状態
を維持している為に、クラツクや不純物の混入を
目視又は外観検査で判別する事が容易であり、出
荷検査が円滑に行える。"Effects of the First Invention" According to this invention, until the product is completed or shipped, the impurity element is simply doped into the surface layer and the glass remains in a normal transparent glass state. , cracks and impurities can be easily determined visually or by external inspection, and shipping inspection can be carried out smoothly.
又前記不純物元素は被膜として形成されている
のではなく、表面層にドーピングされているもの
である為に、製品完成時点又は出荷前に行われる
フツ化水素洗浄工程時においても溶解する恐れが
なく、而も単時間の加熱処理によりクリストバラ
イト層が成長−発現する恐れもない為に、溶接作
業等が円滑に行える。 In addition, since the impurity elements are not formed as a film but are doped into the surface layer, there is no risk of them dissolving during the hydrogen fluoride cleaning process that is performed at the time of product completion or before shipping. Moreover, since there is no fear that a cristobalite layer will grow or appear due to a single hour of heat treatment, welding work etc. can be carried out smoothly.
更に本発明は、前記製品出荷後においてユーザ
段階で、又は製品完成後メーカ段階で1100℃以上
の加熱温度で十数時間加熱する事により、前記不
純物元素を核としてクリストバライト層を発現さ
せる事が出来る為に、而後における熱変形の恐れ
を完全に阻止出来る。 Furthermore, in the present invention, a cristobalite layer can be developed with the impurity elements as cores by heating at a heating temperature of 1100° C. or higher for more than ten hours at the user stage after the product is shipped, or at the manufacturer stage after the product is completed. Therefore, the fear of subsequent thermal deformation can be completely prevented.
而も該クリストバライト層は石英ガラス表面上
に被膜として形成されているのではなく、石英ガ
ラスと一体化している為に、前記クリストバライ
ト層が石英ガラスの圧縮応力層として機能し、熱
変形を抑制する方向に働き、前記従来技術に比較
して一層熱変形が抑制される。 However, since the cristobalite layer is not formed as a film on the quartz glass surface but is integrated with the quartz glass, the cristobalite layer functions as a compressive stress layer of the quartz glass and suppresses thermal deformation. The thermal deformation is further suppressed compared to the prior art.
この場合に前記不純物元素にAL等の三価の陽
イオンを用いた場合は、一価の陽イオンを捕捉し
てSiと同じ四価になろうとする傾向がある為に、
例えNa、Ｋ、Li等の拡散速度の早い不純物が前
記クリストバライト層を突き抜けて石英ガラス中
に侵入しようとしても、これを前記三価の陽イオ
ンで捕捉し、不純物の侵入及び石英ガラスの失透
を一層防止出来る。 In this case, if a trivalent cation such as AL is used as the impurity element, there is a tendency to trap the monovalent cation and make it tetravalent like Si.
Even if impurities with a fast diffusion rate such as Na, K, and Li try to penetrate the cristobalite layer and enter the quartz glass, they will be captured by the trivalent cations, preventing the impurities from penetrating and devitrifying the silica glass. can be further prevented.
尚、前記製品をユーザ段階で1000℃以下の加熱
温度で使用する場合には、クリストバライト層が
発現する事なく透明状態のまま使用出来、その使
用用途が特に限定されない。 In addition, when the above-mentioned product is used at a heating temperature of 1000° C. or less at the user stage, it can be used in a transparent state without developing a cristobalite layer, and its usage is not particularly limited.
「第２発明の要旨」
第２発明は前記製品を製造するのに最も好適な
製造方法を提供するもので、
前記従来技術のように、前もつて追加元素と
SiO2が結合した（粉状又は溶融状態にある）ク
リストバライトを噴霧又は蒸着させて石英ガラス
材表面を被覆させるのではなく、拡散速度の遅い
イオン化不純物元素を含有する溶液を、透明石英
ガラス材外表面にスプレーその他の手段により付
着せしめた後加熱処理する事により、該ガラス材
表面層に前記イオン化不純物元素を浸透させ、前
記不純物元素を均一にドーピングせしめた点にあ
る。"Summary of the Second Invention" The second invention provides the most suitable manufacturing method for manufacturing the above-mentioned product.
Rather than spraying or depositing SiO 2 -bonded cristobalite (in powder or molten state) onto the surface of the quartz glass material, a solution containing ionized impurity elements with a slow diffusion rate is applied to the outside of the transparent quartz glass material. The ionized impurity element is applied to the surface by spraying or other means and then heat-treated to infiltrate the surface layer of the glass material and uniformly dope the impurity element.
この場合前記不純物元素を均一に付着させる為
には、前記溶液をスプレー等で噴霧するのが最も
適当である。 In this case, in order to uniformly adhere the impurity element, it is most appropriate to spray the solution with a spray or the like.
又前記イオン化不純物元素を含有する溶液には
前述したアルミニウムイオンが含有する酸性水溶
液を用いるのがよい。 Further, as the solution containing the ionized impurity element, it is preferable to use the above-mentioned acidic aqueous solution containing aluminum ions.
前記加熱処理は、加熱成型による熱源を利用し
て同時に行つてもよく、又加熱成型炉の入口部で
バーナにより焼き込みを行うよう構成してもよ
い。 The heat treatment may be performed simultaneously using a heat source for hot molding, or baking may be performed using a burner at the entrance of a hot molding furnace.
「第２発明の効果」
従来技術においては、加熱成型を行う前に、顕
在化しているクリストバライト被膜を透明石英ガ
ラス材表面に膜形成するものである為に、加熱成
型中又は溶接作業時に短時間で前記クリストバラ
イトが発現してしまうが、本発明は加熱成型前に
おいては、イオン化不純物元素が含有された溶液
を透明石英ガラス材表面に塗布し、加熱成型と同
時に又はその直前位置での加熱処理によりドーピ
ングを行う為に、加熱成型時又は溶接作業時にお
ける短時間の加熱では、前記ドーピングが進行す
るも、特に前記不純物元素を核とするクリストバ
ライト層が発現するまでは至らず、製品出荷後の
長時間加熱により、始めてクリストバライト層が
発現するものである。"Effects of the Second Invention" In the conventional technology, the cristobalite film that has become visible is formed on the surface of the transparent quartz glass material before heat forming, so it is possible to However, in the present invention, before heat forming, a solution containing an ionized impurity element is applied to the surface of the transparent quartz glass material, and then heat treatment is performed at the same time as the heat forming or immediately before the heat forming. In order to perform doping, when heating for a short time during hot forming or welding work, the doping progresses, but it does not reach the point where a cristobalite layer with the impurity elements as the nucleus develops, and the product is heated for a long time after shipping. A cristobalite layer appears only after heating for a period of time.
従つて本発明によれば、第１発明に記載した石
英ガラス製品を円滑に製造する事が出来る。 Therefore, according to the present invention, the quartz glass product described in the first invention can be smoothly manufactured.
「実施例」
以下、図面を参照して本発明の好適な実施例を
例示的に詳しく説明する。ただしこの実施例に記
載されている構成部品の寸法、材質、形状、その
相対配置などは特に特定的な記載がない限りは、
この発明の範囲をそれのみに限定する趣旨ではな
く、単に説明例に過ぎない。"Embodiments" Hereinafter, preferred embodiments of the present invention will be described in detail by way of example with reference to the drawings. However, the dimensions, materials, shapes, relative positions, etc. of the components described in this example are as follows, unless otherwise specified.
This is not intended to limit the scope of the invention, but is merely an illustrative example.
第１図は本発明の実施例に係る石英ガラス製炉
芯管を製造する装置で、１はバーナ１ａにより炉
芯管３ｂを製造する材料となる透明石英ガラス管
３ａを加熱しながら、該ガラス管３ａを成型する
加熱成型炉、２は該加熱成型炉１の直前位置に配
設された、後記アルミニウムイオンが含有する水
溶液を塗布するスプレー装置である。 FIG. 1 shows an apparatus for manufacturing a quartz glass furnace core tube according to an embodiment of the present invention, in which a burner 1a is used to heat a transparent quartz glass tube 3a, which is a material for manufacturing a furnace core tube 3b, while the glass A heating forming furnace 2 for forming the tube 3a is a spray device disposed immediately before the heating forming furnace 1 for applying an aqueous solution containing aluminum ions, which will be described later.
かかる装置において、前記石英ガラス管３ａを
回転させつつ加熱成型炉１側に向け軸線方向に移
動しながら、加熱成型炉１直前位置で、スプレー
装置２により石英ガラス管３ａ全周面にアルミニ
ウムイオンが含有する水溶液を塗布した後、該溶
液を塗布した石英ガラス管３ａを加熱成型炉１内
に装入し、前記バーナ１ａの火炎により少なくと
も石英ガラスの軟化点以上に加熱する事により、
前記溶液中のイオン化アルミ原子が石英ガラス管
３ａの表面層に浸透しつつ所定形状に成型され
る。 In this apparatus, while the quartz glass tube 3a is rotated and moved in the axial direction toward the heating forming furnace 1, aluminum ions are sprayed onto the entire circumferential surface of the quartz glass tube 3a by a spray device 2 at a position immediately before the heating forming furnace 1. After applying the containing aqueous solution, the quartz glass tube 3a coated with the solution is placed in the heating forming furnace 1, and heated to at least the softening point of the quartz glass by the flame of the burner 1a.
The ionized aluminum atoms in the solution penetrate into the surface layer of the quartz glass tube 3a and are molded into a predetermined shape.
そして成型後の炉芯管３ｂは、第２図に示すよ
うにその表面層４に前記アルミ原子４ａが均一に
ドーピングされており、且つ透明状態を維持して
いる事が確認され、白色のクリストバライトの発
生は全く無かつた。 As shown in FIG. 2, the furnace core tube 3b after molding was confirmed to have its surface layer 4 uniformly doped with the aluminum atoms 4a, and to maintain a transparent state, and to form white cristobalite. There was no occurrence of any.
そしてかかる炉芯管３ｂを電気炉にて約10〜15
時間、1300℃前後で加熱した処、全外表面に均一
にクリストバライト層４′が発生し、熱による変
形は殆んどみられなかつた。 Then, the furnace core tube 3b is heated for about 10 to 15 minutes in an electric furnace.
When heated at around 1300°C for an hour, a cristobalite layer 4' was uniformly generated on the entire outer surface, and almost no deformation due to heat was observed.
従つてかかる実施例によれば前記アルミ原子４
ａが及び該アルミ原子４ａと結合した化合物層が
均一に成型後の炉芯管３ｂ表面層４に分布してい
るだけなので、溶接作業や出荷検査等の製作工程
中では全く通常のガラスと同様に扱う事が可能で
ある。該分布（ドーピング）層４も所定肉厚で完
全に均一に製作でき、前述した本発明の効果を円
滑に達成し得る。 Therefore, according to this embodiment, the aluminum atom 4
A and the compound layer combined with the aluminum atoms 4a are uniformly distributed on the surface layer 4 of the furnace core tube 3b after molding, so during the manufacturing process such as welding work and shipping inspection, it is completely the same as ordinary glass. It is possible to treat The distribution (doping) layer 4 can also be manufactured completely uniformly with a predetermined thickness, and the above-described effects of the present invention can be smoothly achieved.
第１図は本発明の実施例に係る石英ガラス製炉
芯管を製造する装置、第２図は該装置により製造
された出荷時点における炉芯管の断面図を示して
いる。
FIG. 1 shows an apparatus for manufacturing a quartz glass furnace core tube according to an embodiment of the present invention, and FIG. 2 shows a sectional view of the furnace core tube manufactured by the apparatus at the time of shipment.
Claims (1)
石英ガラス製品において、表面層にクリストバラ
イト化を誘起する核となる、拡散速度の遅い不純
物元素が均一にドーピングされており、且つ透明
状態を維持している事を特徴とする石英ガラス製
品。 ２ 拡散速度の遅いイオン化不純物元素を含有す
る溶液を、透明石英ガラス材の外表面に付着せし
めた後加熱処理する事により、該ガラス材表面層
に前記イオン化不純物元素を浸透させ、クリスト
バライト化を誘起する核となる不純物元素を均一
にドーピングせしめた事を特徴とする石英ガラス
製品の製造方法。 ３ 前記イオン化不純物元素が、アルミニウムで
ある特許請求の範囲第第２項記載の石英ガラス製
品の製造方法。 ４ 前記加熱処理が加熱成型と同時に又はその直
前位置で行われる特許請求の範囲第２項又は第３
項記載の石英ガラス製品の製造方法。[Scope of Claims] 1. A quartz glass product for the semiconductor industry having a tubular or concave internal space, the surface layer of which is uniformly doped with an impurity element having a slow diffusion rate and which becomes a nucleus for inducing cristobalite formation, and which is transparent. A quartz glass product that maintains its condition. 2. By applying a solution containing an ionized impurity element with a slow diffusion rate to the outer surface of a transparent quartz glass material and then heating it, the ionized impurity element penetrates into the surface layer of the glass material and induces cristobalite formation. A method for manufacturing a quartz glass product characterized by uniformly doping an impurity element that serves as a core. 3. The method for manufacturing a quartz glass product according to claim 2, wherein the ionized impurity element is aluminum. 4. Claim 2 or 3, wherein the heat treatment is performed at the same time as the heat molding or immediately before the heat molding.
Method for manufacturing quartz glass products described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7021387A JPS63236722A (en) | 1987-03-26 | 1987-03-26 | Quartz glass products and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7021387A JPS63236722A (en) | 1987-03-26 | 1987-03-26 | Quartz glass products and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63236722A JPS63236722A (en) | 1988-10-03 |
| JPH0517179B2 true JPH0517179B2 (en) | 1993-03-08 |
Family
ID=13425022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7021387A Granted JPS63236722A (en) | 1987-03-26 | 1987-03-26 | Quartz glass products and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63236722A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343722A (en) * | 2001-05-16 | 2002-11-29 | Toshiba Ceramics Co Ltd | Quartz glass furnace core tube for low pressure cvd |
| US6875515B2 (en) * | 2002-05-10 | 2005-04-05 | General Electric Company | Fused quartz article having controlled devitrification |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5210467A (en) * | 1975-07-14 | 1977-01-26 | Suzusa Goukin Chiyuuzoushiyo Y | Apparatus for peeling egg shell of boiled egg |
| JPS545404A (en) * | 1977-06-13 | 1979-01-16 | Kubota Ltd | Sound insulating structure ventilation port |
| JPS60186412A (en) * | 1984-03-05 | 1985-09-21 | Onoda Cement Co Ltd | Preparation of cristobalite |
| JPS6123315A (en) * | 1984-07-11 | 1986-01-31 | Toshiba Ceramics Co Ltd | Silica material for heat-treatment of semiconductor |
-
1987
- 1987-03-26 JP JP7021387A patent/JPS63236722A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5210467A (en) * | 1975-07-14 | 1977-01-26 | Suzusa Goukin Chiyuuzoushiyo Y | Apparatus for peeling egg shell of boiled egg |
| JPS545404A (en) * | 1977-06-13 | 1979-01-16 | Kubota Ltd | Sound insulating structure ventilation port |
| JPS60186412A (en) * | 1984-03-05 | 1985-09-21 | Onoda Cement Co Ltd | Preparation of cristobalite |
| JPS6123315A (en) * | 1984-07-11 | 1986-01-31 | Toshiba Ceramics Co Ltd | Silica material for heat-treatment of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63236722A (en) | 1988-10-03 |
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