JPH0516184B2 - - Google Patents

Info

Publication number
JPH0516184B2
JPH0516184B2 JP58026460A JP2646083A JPH0516184B2 JP H0516184 B2 JPH0516184 B2 JP H0516184B2 JP 58026460 A JP58026460 A JP 58026460A JP 2646083 A JP2646083 A JP 2646083A JP H0516184 B2 JPH0516184 B2 JP H0516184B2
Authority
JP
Japan
Prior art keywords
links
word line
distance
decoders
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58026460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59151454A (ja
Inventor
Kazuhiro Shimotori
Kazuyasu Fujishima
Hideyuki Ozaki
Hideji Myatake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58026460A priority Critical patent/JPS59151454A/ja
Publication of JPS59151454A publication Critical patent/JPS59151454A/ja
Publication of JPH0516184B2 publication Critical patent/JPH0516184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58026460A 1983-02-17 1983-02-17 半導体記憶装置 Granted JPS59151454A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026460A JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026460A JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59151454A JPS59151454A (ja) 1984-08-29
JPH0516184B2 true JPH0516184B2 (OSRAM) 1993-03-03

Family

ID=12194116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026460A Granted JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59151454A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636172A (en) * 1995-12-22 1997-06-03 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
US5905295A (en) * 1997-04-01 1999-05-18 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176948A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS59151454A (ja) 1984-08-29

Similar Documents

Publication Publication Date Title
JP3964584B2 (ja) 半導体記憶装置
KR0172393B1 (ko) 탄력적인 컬럼구제 기능을 가지는 반도체 메모리 장치
US5386386A (en) Redundancy circuit having a spare memory block replacing defective memory cells in different blocks
JP2632076B2 (ja) 半導体記憶装置
US5502676A (en) Integrated circuit memory with column redundancy having shared read global data lines
JPH0535520B2 (OSRAM)
JPH07122096A (ja) 半導体メモリ用高速冗長行及び列
JPH03162800A (ja) 半導体メモリ装置
US5379259A (en) Semiconductor memory device
JPS63220500A (ja) 半導体記憶装置の冗長回路
US5272672A (en) Semiconductor memory device having redundant circuit
JPH03203100A (ja) 半導体メモリ装置の並列テスト方法及び半導体メモリ装置
US5706231A (en) Semiconductor memory device having a redundant memory cell
JP2981346B2 (ja) 読み出し専用半導体記憶装置
JPH0156478B2 (OSRAM)
US5528540A (en) Redundant address decoder
JPS6284498A (ja) 半導体記憶装置
JPH0516184B2 (OSRAM)
JPH1027494A (ja) 半導体メモリ
JP4125448B2 (ja) 半導体メモリ装置
JP2980472B2 (ja) 半導体記憶装置
US6762971B2 (en) Semiconductor memory device
JP3178430B2 (ja) 半導体記憶装置
US6078535A (en) Redundancy arrangement for novel memory architecture
JPH0463479B2 (OSRAM)