JPH0516172B2 - - Google Patents

Info

Publication number
JPH0516172B2
JPH0516172B2 JP1008384A JP1008384A JPH0516172B2 JP H0516172 B2 JPH0516172 B2 JP H0516172B2 JP 1008384 A JP1008384 A JP 1008384A JP 1008384 A JP1008384 A JP 1008384A JP H0516172 B2 JPH0516172 B2 JP H0516172B2
Authority
JP
Japan
Prior art keywords
processed
plasma
air
substrate
core solenoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1008384A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60154620A (ja
Inventor
Noriaki Yamamoto
Fumio Shibata
Norio Kanai
Sadayuki Okudaira
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1008384A priority Critical patent/JPS60154620A/ja
Publication of JPS60154620A publication Critical patent/JPS60154620A/ja
Publication of JPH0516172B2 publication Critical patent/JPH0516172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP1008384A 1984-01-25 1984-01-25 マイクロ波プラズマ処理方法及び装置 Granted JPS60154620A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1008384A JPS60154620A (ja) 1984-01-25 1984-01-25 マイクロ波プラズマ処理方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1008384A JPS60154620A (ja) 1984-01-25 1984-01-25 マイクロ波プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
JPS60154620A JPS60154620A (ja) 1985-08-14
JPH0516172B2 true JPH0516172B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=11740450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1008384A Granted JPS60154620A (ja) 1984-01-25 1984-01-25 マイクロ波プラズマ処理方法及び装置

Country Status (1)

Country Link
JP (1) JPS60154620A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511433B2 (ja) * 1986-12-12 1996-06-26 株式会社日立製作所 マイクロ波プラズマ処理装置
DE3774098D1 (de) * 1986-12-29 1991-11-28 Sumitomo Metal Ind Plasmageraet.
JPS63207131A (ja) * 1987-02-24 1988-08-26 Japan Steel Works Ltd:The プラズマ処理装置
JP2656503B2 (ja) * 1987-09-24 1997-09-24 株式会社日立製作所 マイクロ波プラズマ処理方法
JP2595640B2 (ja) * 1988-03-30 1997-04-02 株式会社島津製作所 プラズマ処理装置
JPH0567586A (ja) * 1991-09-09 1993-03-19 Nec Corp Ｅｃｒプラズマエツチング装置
JP2781712B2 (ja) * 1993-03-18 1998-07-30 株式会社日立製作所 プラズマ処理方法
JP3199957B2 (ja) 1994-06-20 2001-08-20 株式会社日立製作所 マイクロ波プラズマ処理方法
JP2714547B2 (ja) * 1995-12-13 1998-02-16 株式会社日立製作所 マイクロ波プラズマ処理装置及び処理方法

Also Published As

Publication number Publication date
JPS60154620A (ja) 1985-08-14

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