JPH0515069B2 - - Google Patents

Info

Publication number
JPH0515069B2
JPH0515069B2 JP60005411A JP541185A JPH0515069B2 JP H0515069 B2 JPH0515069 B2 JP H0515069B2 JP 60005411 A JP60005411 A JP 60005411A JP 541185 A JP541185 A JP 541185A JP H0515069 B2 JPH0515069 B2 JP H0515069B2
Authority
JP
Japan
Prior art keywords
oxide film
element isolation
region
source
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60005411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61164265A (ja
Inventor
Michio Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60005411A priority Critical patent/JPS61164265A/ja
Publication of JPS61164265A publication Critical patent/JPS61164265A/ja
Publication of JPH0515069B2 publication Critical patent/JPH0515069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Element Separation (AREA)
JP60005411A 1985-01-16 1985-01-16 Ｍｉｓ型半導体集積回路装置 Granted JPS61164265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60005411A JPS61164265A (ja) 1985-01-16 1985-01-16 Ｍｉｓ型半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60005411A JPS61164265A (ja) 1985-01-16 1985-01-16 Ｍｉｓ型半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS61164265A JPS61164265A (ja) 1986-07-24
JPH0515069B2 true JPH0515069B2 (enrdf_load_html_response) 1993-02-26

Family

ID=11610401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60005411A Granted JPS61164265A (ja) 1985-01-16 1985-01-16 Ｍｉｓ型半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS61164265A (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079932B2 (ja) * 1989-04-07 1995-02-01 株式会社東芝 半導体装置
US5285069A (en) * 1990-11-21 1994-02-08 Ricoh Company, Ltd. Array of field effect transistors of different threshold voltages in same semiconductor integrated circuit
US6437416B1 (en) * 1996-04-12 2002-08-20 Cree Microwave, Inc. Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance
US6320245B1 (en) 1998-05-19 2001-11-20 Nec Corporation Radiation-hardened semiconductor device
JP5555864B2 (ja) * 2009-12-22 2014-07-23 株式会社ブルックマンテクノロジ 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375777A (en) * 1976-12-16 1978-07-05 Nec Corp Mos type semiconductor device
JPS5435688A (en) * 1977-08-25 1979-03-15 Mitsubishi Electric Corp Manufacture of complementary mos integrated circuit
JPS6018150B2 (ja) * 1977-09-16 1985-05-09 日本電気株式会社 絶縁ゲ−ト型電界効果半導体装置
JPS5735341A (en) * 1980-08-12 1982-02-25 Toshiba Corp Method of seperating elements of semiconductor device

Also Published As

Publication number Publication date
JPS61164265A (ja) 1986-07-24

Similar Documents

Publication Publication Date Title
US4853340A (en) Semiconductor device isolated by a pair of field oxide regions
JPH0770685B2 (ja) 相補形ｍｉｓ半導体集積回路
JP4009331B2 (ja) Ｍｏｓトランジスタおよびその製造方法
JPH02264464A (ja) 半導体装置およびその製造方法
JPH0515069B2 (enrdf_load_html_response)
JP3058604B2 (ja) 二重接合構造を持つ半導体装置およびその製造方法
JPH0770686B2 (ja) 相補形ｍｉｓ半導体集積回路装置
JP2949745B2 (ja) 縦型ｍｏｓ電界効果トランジスタの製造方法
JPS62262462A (ja) 半導体装置
JP2547729B2 (ja) 高耐圧パワ−集積回路
JP2684712B2 (ja) 電界効果トランジスタ
JPH06244428A (ja) Ｍｏｓ型半導体素子の製造方法
JP3059009B2 (ja) 半導体装置およびその製造方法
JPH05283425A (ja) Ｍｉｓ型半導体装置の製造方法
JPS627148A (ja) 相補型半導体装置及びその製造方法
JP2808620B2 (ja) 半導体装置の製造方法
JP3253712B2 (ja) 半導体装置の製造方法
JPS625654A (ja) 半導体集積回路装置及びその製造方法
JP2676769B2 (ja) 半導体装置
JPH02219237A (ja) Ｍｉｓ型半導体装置
JPH0517713B2 (enrdf_load_html_response)
JPH03120870A (ja) 絶縁ゲート型半導体装置
JPS60130136A (ja) 半導体集積回路装置
JPH0661484A (ja) 半導体装置
JP2682426B2 (ja) 半導体集積回路装置およびその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term