JPH05144955A - Package for receiving sensor element - Google Patents
Package for receiving sensor elementInfo
- Publication number
- JPH05144955A JPH05144955A JP3304525A JP30452591A JPH05144955A JP H05144955 A JPH05144955 A JP H05144955A JP 3304525 A JP3304525 A JP 3304525A JP 30452591 A JP30452591 A JP 30452591A JP H05144955 A JPH05144955 A JP H05144955A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- frame
- insulating base
- long side
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はファクシミリ等において
使用される画像情報を電気信号に変換するセンサー素子
を収容するためのセンサー素子収納用パッケージの改良
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a sensor element housing package for housing a sensor element for converting image information used in a facsimile or the like into an electric signal.
【０００２】[0002]
【従来の技術】従来、画像情報を電気信号に変換するセ
ンサー素子を収容するためのセンサー素子収納用パッケ
ージは、上面中央部にセンサー素子が載置固定される載
置部と該載置部周辺から長辺側側面を介し底面かけて導
出されている複数個のメタライズ配線層を有する矩形形
状の絶縁基体と、該絶縁基体のセンサー素子載置部を囲
繞するように中央部に開孔を有する矩形形状の枠体とか
ら構成されており、絶縁基体の上面外周部にガラスから
成る接着材を介して枠体を載置させ、接着材のガラスを
溶融させることによって枠体は絶縁基体の上面に取着さ
れている。2. Description of the Related Art Conventionally, a sensor element housing package for accommodating a sensor element for converting image information into an electric signal includes a mounting portion on which a sensor element is mounted and fixed at a central portion of an upper surface and a periphery of the mounting portion. A rectangular insulating base having a plurality of metallized wiring layers extending from the bottom to the bottom through the long side surface, and an opening in the center so as to surround the sensor element mounting portion of the insulating base. The frame body is composed of a rectangular frame, and the frame body is placed on the outer peripheral portion of the upper surface of the insulating substrate via an adhesive material made of glass, and the glass of the adhesive material is melted to form the upper surface of the insulating substrate body. Is attached to.
【０００３】かかる従来のセンサー素子収納用パッケー
ジは枠体の開孔内に位置する絶縁基体のセンサー素子載
置部にセンサー素子を載置固定するとともに該センサー
素子の各電極をボンディングワイヤを介してメタライズ
配線層に接続し、しかる後、枠体の上部にガラスから成
る透光性蓋体を封止材を介して接合し、内部にセンサー
素子を気密に封止することによってセンサー装置とな
る。In such a conventional package for storing a sensor element, the sensor element is mounted and fixed on the sensor element mounting portion of the insulating substrate located in the opening of the frame, and each electrode of the sensor element is bonded via the bonding wire. After connecting to the metallized wiring layer, a translucent lid body made of glass is bonded to the upper part of the frame body through a sealing material, and the sensor element is hermetically sealed inside to form a sensor device.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、この従
来のセンサー素子収納用パッケージにおいては、通常、
絶縁基体と枠体の外形寸法が同じであり、そのため絶縁
基体の上面外周部に枠体をガラスから成る接着材を介し
て取着すると取着時、溶融ガラスの一部が絶縁基体の側
面から底面にかけて流出するとともに絶縁基体の側底面
に被着させたメタライズ配線層の表面を覆ってしまい、
その結果、メタライズ配線層を外部電気回路基板の配線
導体に強固に接続させるのが不可となって内部に収容す
るセンサー素子を外部電気回路に確実、強固に電気的接
続することができないという欠点を有していた。However, in this conventional package for housing a sensor element, normally,
Since the outer dimensions of the insulating base and the frame are the same, therefore, if the frame is attached to the outer peripheral surface of the upper surface of the insulating base with an adhesive made of glass, a part of the molten glass is removed from the side of the insulating base during attachment. It flows out to the bottom surface and covers the surface of the metallized wiring layer deposited on the side bottom surface of the insulating base,
As a result, it is impossible to firmly connect the metallized wiring layer to the wiring conductor of the external electric circuit board, and the sensor element housed inside cannot be securely and firmly electrically connected to the external electric circuit. I had.
【０００５】[0005]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は内部に収容するセンサー素子を外部電気
回路に確実に電気的接続することができるセンサー素子
収納用パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been conceived in view of the above-mentioned drawbacks, and an object thereof is to provide a sensor element housing package capable of reliably electrically connecting a sensor element housed inside to an external electric circuit. Especially.
【０００６】[0006]
【課題を解決するための手段】本発明は上面から長辺側
側面を介し底面にかけて複数個のメタライズ配線層を被
着形成した矩形状絶縁基体の上面外周部にガラスから成
る接着材を介して矩形状枠体を取着したセンサー素子収
納用パッケージであって、前記絶縁基体の上面に枠体
を、該枠体の長辺側側面が絶縁基体の長辺側側面より少
なくとも0.3mm 以上内側となるようにして取着したこと
を特徴とするものである。According to the present invention, a rectangular insulating substrate having a plurality of metallized wiring layers deposited from the upper surface to the bottom surface through the long side surface is provided with an adhesive material made of glass on the outer peripheral surface of the upper surface of the rectangular insulating substrate. A sensor element housing package having a rectangular frame attached, wherein a frame is provided on an upper surface of the insulating base, and a long side surface of the frame is at least 0.3 mm or more inside from a long side surface of the insulating base. It is characterized by being attached so that
【０００７】[0007]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 及び図2 は本発明のセンサー素子収納用パッケ
ージの一実施例を示し、1は矩形形状の絶縁基体、2 は
同じく矩形形状の枠体である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a sensor element of the present invention, in which 1 is a rectangular insulating base and 2 is a rectangular frame.
【０００８】前記絶縁基体１は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体等の電気絶縁材料から成り、その上面中
央部にセンサー素子3 が載置固定される載置部A を有
し、該載置部A にはセンサー素子3 がガラス、有機樹脂
等の接着材を介し固定される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. Has a mounting portion A on which the sensor element 3 is mounted and fixed, and the sensor element 3 is fixed to the mounting portion A via an adhesive material such as glass or organic resin.
【０００９】前記絶縁基体1 は例えば、酸化アルミニウ
ム質焼結体から成る場合、まずアルミナ(Al 2 O 3 ) 、
シリカ(SiO2 ) 、マグネシア(MgO) 、カルシア(CaO) 等
の原料粉末を矩形形状のプレス型内に充填させるととも
に一定圧力を印加して形成し、次に前記成形体を約1500
℃の温度で焼成することによって製作される。When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, first, alumina (Al 2 O 3 )
Silica (SiO 2 ), magnesia (MgO), calcia (CaO), and other raw material powders are filled into a rectangular press die and a constant pressure is applied to form it.
It is manufactured by firing at a temperature of ℃.
【００１０】尚、前記絶縁基体1 はその上面の反りを80
μm以下としておくとセンサー素子3 の長さが例えば15m
m以上の長いものであっても絶縁基体1 の上面に水平に
固定でき、センサー素子3における画像情報から電気信
号への変換を正確となすことができる。従って、前記絶
縁基体1 はその上面の反りを80μm 以下としておくこと
が好ましい。The insulating substrate 1 has a warp of 80
If it is less than μm, the length of the sensor element 3 will be 15m, for example.
Even if the length is longer than m, it can be fixed horizontally on the upper surface of the insulating substrate 1, and the image information in the sensor element 3 can be accurately converted into an electric signal. Therefore, it is preferable that the upper surface of the insulating substrate 1 has a warp of 80 μm or less.
【００１１】また前記絶縁基体1 にはセンサー素子載置
部A 周辺から側面を介し底面に導出されている複数個の
メタライズ配線層4 が被着されており、該メタライズ配
線層4 のセンサー素子載置部A 周辺部にはセンサー素子
3 の各電極がボンディングワイヤ5 を介して電気的に接
続され、また絶縁基体1 の底面部は外部電気回路基板の
配線導体に接続される。Further, a plurality of metallized wiring layers 4 extending from the periphery of the sensor element mounting portion A through the side surface to the bottom surface are adhered to the insulating substrate 1, and the sensor element mounting portions of the metallized wiring layer 4 are mounted. A sensor element is installed around the holder A.
Each electrode of 3 is electrically connected through a bonding wire 5, and the bottom surface of the insulating substrate 1 is connected to a wiring conductor of an external electric circuit board.
【００１２】前記メタライズ配線層4 はタングステン、
モリブデン−マンガン、銀−パラジウム等の金属材料か
ら成り、該金属材料粉末に適当な有機溶剤、溶媒を添加
混合して得た金属ペーストを絶縁基体1 のセンサー素子
載置部A 周辺から底面にかけて従来周知のスクリーン印
刷法等の厚膜手法を採用して印刷塗布するとともにこれ
を高温で焼き付けることによって形成される。The metallized wiring layer 4 is made of tungsten,
A metal paste made of a metal material such as molybdenum-manganese or silver-palladium, obtained by adding and mixing a suitable organic solvent or solvent to the powder of the metal material, is conventionally used from the periphery of the sensor element mounting portion A of the insulating substrate 1 to the bottom surface. It is formed by applying a well-known thick film method such as a screen printing method by printing and baking it at a high temperature.
【００１３】尚、前記メタライズ配線層4 は銀(Ag)70.0
乃至90.0重量％、パラジウム(Pd)10.0乃至30.0重量％、
ビスマス(Bi)1.0 乃至5.0 重量％の金属で形成しておく
とメタライズ金属層4 を絶縁基体1 に強固に被着させる
ことができるとともにメタライズ配線層4 の導通抵抗を
低い値として、且つ耐酸化性を優れたものとなすことが
でき、後述する絶縁基体1 の上面に枠体2 をガラスから
成る接着材を介して取着してもメタライズ配線層4 の表
面にガラスの溶融熱によって酸化物膜が形成されること
はなく、メタライズ配線層4 とボンディングワイヤ5 と
の電気的接続及びメタライズ配線層4 と外部電気回路基
板の配線導体との接続を極めて強固となすことができ
る。従って、前記メタライズ配線層4 は銀(Ag)70.0乃至
90.0重量％、パラジウム(Pd)10.0乃至30.0重量％、ビス
マス(Bi)1.0 乃至5.0 重量％の金属で形成しておくこと
が好ましい。The metallized wiring layer 4 is made of silver (Ag) 70.0
To 90.0 wt%, palladium (Pd) 10.0 to 30.0 wt%,
Forming a metal of bismuth (Bi) of 1.0 to 5.0% by weight enables the metallized metal layer 4 to be firmly adhered to the insulating substrate 1, reduces the conduction resistance of the metallized wiring layer 4, and also resists oxidation. Even if the frame body 2 is attached to the upper surface of the insulating substrate 1 described below with an adhesive made of glass, the surface of the metallized wiring layer 4 is oxidized by the heat of fusion of the glass to form an oxide. No film is formed, so that the electrical connection between the metallized wiring layer 4 and the bonding wire 5 and the connection between the metallized wiring layer 4 and the wiring conductor of the external electric circuit board can be made extremely strong. Therefore, the metallized wiring layer 4 is formed of silver (Ag) 70.0 to
The metal is preferably 90.0% by weight, palladium (Pd) 10.0 to 30.0% by weight, and bismuth (Bi) 1.0 to 5.0% by weight.
【００１４】前記絶縁基体1 の上面外周部にはまた矩形
形状の枠体2 がガラスから成る接着材6 を介して取着さ
れており、該枠体2 は絶縁基体1 のセンサー素子3 が載
置固定される載置部A を囲繞するような枠状の形状とな
っている。この枠体2 はその中央部の開孔と絶縁基体1
の上面とでセンサー素子3 を内部に収容するための空所
を形成する。A rectangular frame 2 is attached to the outer peripheral portion of the upper surface of the insulating base 1 via an adhesive 6 made of glass, and the sensor element 3 of the insulating base 1 is mounted on the frame 2. It has a frame-like shape that surrounds the placing portion A that is placed and fixed. This frame 2 has an opening in the center and an insulating base 1.
A space for housing the sensor element 3 inside is formed with the upper surface of the.
【００１５】前記枠体2 は酸化アルミニウム質焼結体、
ムライト質焼結体、窒化アルミニウム質焼結体、炭化珪
素質焼結体等の電気絶縁材料から成り、前述の絶縁基体
1 と同様の方法、即ち、酸化アルミニウム質焼結体から
成る場合にはアルミナ(Al 2 O 3 ) 、シリカ(SiO2 ) 、
マグネシア(MgO) 、カルシア(CaO) 等の原料粉末をプレ
ス成形法により枠状に成形するとともに該成形体を約16
00℃の温度で焼成することによって製作される。The frame 2 is an aluminum oxide sintered body,
The insulating base material is made of an electrically insulating material such as a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body.
A method similar to 1, that is, alumina (Al 2 O 3 ) when composed of an aluminum oxide sintered body, silica (SiO 2 ),
Raw material powders such as magnesia (MgO) and calcia (CaO) are molded into a frame shape by press molding and
It is manufactured by firing at a temperature of 00 ° C.
【００１６】また前記枠体2 は図2 に示す如く、その長
辺側側面が絶縁基体1 の長辺側側面より0.3m以上の距離
t をもって内側に配されるように絶縁基体1 上に取着さ
れており、これによって枠体2 の絶縁基体1 への取着が
絶縁基体1 の外周部より若干内側となり、その結果、絶
縁基体1 上に枠体2 をガラスから成る接着材6 を介して
取着する際、接着材6 を構成するガラスの一部が絶縁基
体1 の底面に流出して絶縁基体1 の底面部のメタライズ
配線層4 を覆うことはなく、メタライズ配線層4 を常に
外部電気回路基板の配線導体に強固に接続させて内部に
収容するセンサー素子3 を外部電気回路に確実、且つ強
固に電気的接続することができる。Further, as shown in FIG. 2, the frame body 2 has a side surface on the long side of 0.3 m or more from the side surface on the long side of the insulating base 1.
It is attached to the insulating base 1 so as to be arranged inside with t, so that the attachment of the frame body 2 to the insulating base 1 is slightly inside the outer peripheral portion of the insulating base 1, and as a result, the insulating base 1 is attached. 1 When the frame 2 is attached to the upper surface of the insulating substrate 1 via the adhesive material 6 made of glass, a part of the glass constituting the adhesive material 6 flows out to the bottom surface of the insulating base 1 and the metallized wiring on the bottom surface of the insulating base 1 is attached. The metallized wiring layer 4 is always firmly connected to the wiring conductor of the external electric circuit board without covering the layer 4 so that the sensor element 3 housed inside is securely and firmly electrically connected to the external electric circuit. it can.
【００１７】尚、前記絶縁基体1 の長辺側側面と枠体2
の長辺側側面との間の距離t は0.3mm 未満となると絶縁
基体1 と枠体2 とを取着させる接着材6 が絶縁基体1 の
底面に流出してメタライズ配線層4 を外部電気回路基板
の配線導体に強固に接続させることができなくなる。従
って、前記絶縁基体1 の長辺側側面と枠体2の長辺側側
面との間の距離t は0.3mm 以上としておくことが好まし
い。The long side surface of the insulating base 1 and the frame 2
When the distance t between the long side of the insulating base 1 and the side surface is less than 0.3 mm, the adhesive 6 for attaching the insulating base 1 and the frame 2 flows out to the bottom surface of the insulating base 1 and the metallized wiring layer 4 is connected to the external electric circuit. It becomes impossible to firmly connect to the wiring conductor of the substrate. Therefore, the distance t between the long side surface of the insulating substrate 1 and the long side surface of the frame body 2 is preferably 0.3 mm or more.
【００１８】また前記絶縁基体1 と枠体2 とを取着する
接着材6 はガラスから成り、例えば酸化鉛50.0乃至70.0
重量％、酸化珪素1.0 乃至7.0 重量％、酸化ホウ素4.0
乃至14.0重量％、酸化亜鉛5.0 乃至15.0重量％にフィラ
ーとしてのジルコンを10.0乃至30.0重量％含有させたも
のが好適に使用される。The adhesive 6 for attaching the insulating base 1 and the frame 2 is made of glass, for example, lead oxide 50.0 to 70.0.
% By weight, silicon oxide 1.0 to 7.0% by weight, boron oxide 4.0
It is suitable to use zircon as a filler in an amount of 10.0 to 34.0% by weight, zinc oxide in an amount of 5.0 to 15.0% by weight, and zircon as a filler in an amount of 10.0 to 30.0% by weight.
【００１９】前記接着材6 による絶縁基体1 と枠体2 の
取着は、まず絶縁基体1 の上面もしくは枠体2 の下面に
予め接着材6 を塗布しておき、次に前記絶縁基体1 の上
面に枠体2 を間に接着材6 を挟むようにして載置させ、
最後にこれを約450 ℃の温度に加熱し、絶縁基体1 もし
くは枠体2 に予め塗布させておいた接着材を溶融させる
ことによって行われる。この場合、接着材6 は枠体2 の
長辺側側面が絶縁基体1 の長辺側側面より所定距離内側
となっていることから接着材6 が絶縁基体1 の底面に流
出することはなく、メタライズ配線層4 の絶縁基体1 底
面部が接着材6のガラスで被覆されるのを皆無としてメ
タライズ配線層4 を常に外部電気回路基板の配線導体に
強固に接続させることが可能となる。To attach the insulating base 1 and the frame 2 with the adhesive 6, the adhesive 6 is first applied to the upper surface of the insulating base 1 or the lower surface of the frame 2, and then the insulating base 1 is attached. Place the frame body 2 on the top surface with the adhesive 6 sandwiched between them,
Finally, this is heated to a temperature of about 450 ° C. to melt the adhesive material previously applied to the insulating substrate 1 or the frame 2. In this case, the adhesive 6 does not flow out to the bottom surface of the insulating base 1 because the long side of the frame body 2 is inside the long side of the insulating base 1 by a predetermined distance. Since the bottom surface of the insulating substrate 1 of the metallized wiring layer 4 is not covered with the glass of the adhesive material 6, the metallized wiring layer 4 can always be firmly connected to the wiring conductor of the external electric circuit board.
【００２０】前記絶縁基体1 上に取着された枠体2 の上
面にはまた透光性の蓋体7 が樹脂等から成る封止材を介
して接合され、これによって内部にセンサー素子3 が気
密に収容される。A translucent lid 7 is joined to the upper surface of the frame body 2 attached on the insulating substrate 1 via a sealing material made of resin or the like, whereby the sensor element 3 is internally provided. Airtightly housed.
【００２１】前記透光性蓋体7 はサファイヤやガラス等
の光を透過し得る透光性の材料から成り、外部の画像情
報を内部に収容するセンサー素子3に照射する作用を為
す。The light-transmitting lid 7 is made of a light-transmitting material such as sapphire or glass capable of transmitting light, and has a function of irradiating the sensor element 3 housed therein with external image information.
【００２２】尚、前記透光性蓋体7 は、例えばガラスか
ら成る場合、酸化珪素、酸化アルミニウム、酸化カルシ
ウム、酸化バリウム等のガラス成分粉末を溶融冷却する
とともに平板状に形成することによって製作される。When the translucent lid 7 is made of glass, for example, it is manufactured by melting and cooling glass component powder such as silicon oxide, aluminum oxide, calcium oxide, barium oxide, etc. and forming it into a flat plate shape. It
【００２３】また前記透光性蓋体7 が接合される枠体2
の上面を平坦加工し、反りを80μm以下となしておくと
枠体2 に透光性材料から成る蓋体7 を封止材B を介して
接合させる際、枠体2 と蓋体7 との間に介在する封止材
B の量を全体にわたって略均等となすことができ、その
結果、枠体2 と蓋体7 との接合強度を強くしてパッケー
ジ内の気密封止を完全となし、内部に収容するセンサー
素子3を長期間にわたり正常、且つ安定に作動させるこ
とができる。A frame body 2 to which the translucent lid body 7 is joined
When the upper surface of the frame is flattened and the warp is set to 80 μm or less, when the lid body 7 made of a translucent material is bonded to the frame body 2 through the sealing material B, the frame body 2 and the lid body 7 are joined together. Sealing material interposed
The amount of B can be made substantially uniform over the whole, and as a result, the joint strength between the frame body 2 and the lid body 7 is strengthened to complete the hermetic sealing in the package, and the sensor element 3 housed inside is packaged. Can be operated normally and stably for a long period of time.
【００２４】更に前記透光性蓋体7 が接合される枠体2
の上面を平坦加工し、反りを80μm以下となしておくと
枠体2 に透光性材料から成る蓋体7 を封止材B を介して
接合させると透光性蓋体7 が内部に収容するセンサー素
子3 の上面と実質的に平行となり、その結果、画像情報
を透光性蓋体7 を介してセンサー素子3 に照射した際、
該画像情報は透光性蓋体7 で歪みを発生することなくそ
のままの状態でセンサー素子3 に照射され、センサー素
子3 に画像情報に対応した正確な電気信号への変換を起
こさせることができる。Further, the frame body 2 to which the translucent lid body 7 is joined
When the upper surface of the is processed flat and the warp is set to 80 μm or less, the translucent lid 7 is housed inside when the lid 7 made of a translucent material is joined to the frame 2 through the sealing material B. It becomes substantially parallel to the upper surface of the sensor element 3, and as a result, when the image information is applied to the sensor element 3 through the translucent lid 7,
The image information is applied to the sensor element 3 as it is without distortion in the translucent lid 7, and the sensor element 3 can be converted into an accurate electric signal corresponding to the image information. ..
【００２５】かくしてこのセンサー素子収納用パッケー
ジによれば、絶縁基体1 のセンサー素子載置部A にセン
サー素子3 を接着材を介して載置固定するとともに該セ
ンサー素子3 の各電極をボンディングワイヤ5 を介しメ
タライズ配線層4 に電気的に接続した後、枠体2 の上面
にガラス等から成る透光性の蓋体7 を樹脂等の封止材B
で接合させ、内部にセンサー素子3 を気密に封止するこ
とによって最終製品としてのセンサー装置となる。Thus, according to this sensor element housing package, the sensor element 3 is mounted and fixed on the sensor element mounting portion A of the insulating substrate 1 via the adhesive, and each electrode of the sensor element 3 is bonded by the bonding wire 5 After electrically connecting to the metallized wiring layer 4 via the, the translucent lid body 7 made of glass or the like is attached to the upper surface of the frame body 2 with a sealing material B such as resin.
Then, the sensor element 3 is hermetically sealed inside to form a sensor device as a final product.
【００２６】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えばメタライズ配線層4 の表
面に金(Au)、白金(Pt)等の金属を被着させておいてもよ
い。The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, gold (Au) may be formed on the surface of the metallized wiring layer 4. ), Platinum (Pt), or other metal may be deposited.
【００２７】[0027]
【発明の効果】本発明のセンサー素子収納用パッケージ
によれば、矩形形状の絶縁基体上面に矩形形状の枠体
を、枠体の長辺側側面が絶縁基体の長辺側側面より0.3m
m 以上の距離をもって内側に配されるように取着したこ
とから絶縁基体に枠体を取着する接着材の一部が絶縁基
体の底面に流出し、絶縁基体の底面部に位置するメタラ
イズ配線層を覆うことはなく、その結果、メタライズ配
線層を常に外部電気回路基板の配線導体に強固に接続さ
せて内部に収容するセンサー素子を外部電気回路に確
実、且つ強固に電気的接続することが可能となる。According to the sensor element housing package of the present invention, a rectangular frame is provided on the upper surface of a rectangular insulating substrate, and the long side surface of the frame is 0.3 m from the long side surface of the insulating substrate.
The metallized wiring located on the bottom of the insulating substrate flows out to the bottom of the insulating substrate because part of the adhesive that attaches the frame to the insulating substrate flows out because it is attached so that it is placed inside with a distance of m or more. As a result, the metallized wiring layer is always firmly connected to the wiring conductor of the external electric circuit board to securely and firmly electrically connect the sensor element housed inside to the external electric circuit without covering the layer. It will be possible.
【図１】本発明のセンサー素子収納用パッケージの一実
施例を示す拡大断面図である。FIG. 1 is an enlarged cross-sectional view showing an embodiment of a sensor element housing package of the present invention.
【図２】図１に示すパッケージの枠体を取着させた絶縁
基体の平面図である。FIG. 2 is a plan view of an insulating base to which the frame body of the package shown in FIG. 1 is attached.
１・・・・・絶縁基体 ２・・・・・枠体 ３・・・・・センサー素子 ４・・・・・メタライズ配線層 ６・・・・・ガラスから成る接着材 Ａ・・・・・センサー素子載置部 Ｂ・・・・・封止材 1 ... Insulating substrate 2 ... Frame 3 ... Sensor element 4 ... Metallized wiring layer 6 ... Adhesive made of glass A ... Sensor element mounting part B ... Sealing material
Claims (1)
数個のメタライズ配線層を被着形成した矩形状絶縁基体
の上面外周部にガラスから成る接着材を介して矩形状枠
体を取着したセンサー素子収納用パッケージであって、
前記絶縁基体の上面に枠体を、該枠体の長辺側側面が絶
縁基体の長辺側側面より少なくとも0.3mm以上内側とな
るようにして取着したことを特徴とするセンサー素子収
納用パッケージ。1. A rectangular frame body is attached to an outer peripheral surface of an upper surface of a rectangular insulating substrate on which a plurality of metallized wiring layers are adhered and formed from an upper surface to a bottom surface of a long side by an adhesive made of glass. A package for storing the sensor element,
A package for storing a sensor element, characterized in that a frame is attached to an upper surface of the insulating base such that a long side surface of the frame is at least 0.3 mm or more inside a long side surface of the insulating base. ..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3304525A JP2801448B2 (en) | 1991-11-20 | 1991-11-20 | Package for storing sensor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3304525A JP2801448B2 (en) | 1991-11-20 | 1991-11-20 | Package for storing sensor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05144955A true JPH05144955A (en) | 1993-06-11 |
| JP2801448B2 JP2801448B2 (en) | 1998-09-21 |
Family
ID=17934068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3304525A Expired - Fee Related JP2801448B2 (en) | 1991-11-20 | 1991-11-20 | Package for storing sensor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2801448B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002118191A (en) * | 2000-10-10 | 2002-04-19 | Sanyo Electric Co Ltd | Semiconductor device and method of manufacturing the same |
| WO2003041174A1 (en) * | 2001-11-05 | 2003-05-15 | Mitsumasa Koyanagi | Solid-state image sensor and its production method |
| JP2007507911A (en) * | 2005-01-29 | 2007-03-29 | イーエーディーエス・アストリウム・リミテッド | Improvements in packaged high frequency ceramic circuits. |
-
1991
- 1991-11-20 JP JP3304525A patent/JP2801448B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002118191A (en) * | 2000-10-10 | 2002-04-19 | Sanyo Electric Co Ltd | Semiconductor device and method of manufacturing the same |
| WO2003041174A1 (en) * | 2001-11-05 | 2003-05-15 | Mitsumasa Koyanagi | Solid-state image sensor and its production method |
| JPWO2003041174A1 (en) * | 2001-11-05 | 2005-03-03 | 小柳 光正 | Solid-state image sensor and manufacturing method thereof |
| JP5105695B2 (en) * | 2001-11-05 | 2012-12-26 | カミヤチョウ アイピー ホールディングス | Solid-state image sensor and manufacturing method thereof |
| JP2007507911A (en) * | 2005-01-29 | 2007-03-29 | イーエーディーエス・アストリウム・リミテッド | Improvements in packaged high frequency ceramic circuits. |
| JP4699444B2 (en) * | 2005-01-29 | 2011-06-08 | アストリウム・リミテッド | Method for assembling a packaged high frequency circuit module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2801448B2 (en) | 1998-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2801448B2 (en) | Package for storing sensor elements | |
| EP0275122B1 (en) | Chip package transmissive to ultraviolet light | |
| JP2851733B2 (en) | Package for storing sensor elements | |
| JP3046148B2 (en) | Electronic component storage package | |
| JP2002107254A (en) | Package for pressure detector | |
| JP2948956B2 (en) | Package for storing sensor elements | |
| JPH05144956A (en) | Package for receiving semiconductor element | |
| JP2685083B2 (en) | Manufacturing method of semiconductor device storage package | |
| JP2792638B2 (en) | Package for storing semiconductor elements | |
| JP2922682B2 (en) | Package for storing solid-state image sensor | |
| JP2792637B2 (en) | Package for storing semiconductor elements | |
| JP2549768Y2 (en) | Package for storing solid-state image sensor | |
| JP2948991B2 (en) | Package for storing semiconductor elements | |
| JP3176251B2 (en) | Package for storing semiconductor elements | |
| JP3176267B2 (en) | Package for storing semiconductor elements | |
| JP2750255B2 (en) | Electronic component storage package | |
| JPH05326738A (en) | Package for semiconductor element | |
| JPH06169025A (en) | Semiconductor element housing package | |
| JPH0637196A (en) | Package for housing semiconductor device | |
| JP2555178Y2 (en) | Package for storing semiconductor elements | |
| JP2514911Y2 (en) | Package for storing semiconductor devices | |
| JP2750256B2 (en) | Package for storing semiconductor elements | |
| JP2746802B2 (en) | Semiconductor device | |
| JPH0629330A (en) | Semiconductor device | |
| JPH11233661A (en) | Package for electronic component accommodation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |