JPH0513383B2 - - Google Patents

Info

Publication number
JPH0513383B2
JPH0513383B2 JP60058951A JP5895185A JPH0513383B2 JP H0513383 B2 JPH0513383 B2 JP H0513383B2 JP 60058951 A JP60058951 A JP 60058951A JP 5895185 A JP5895185 A JP 5895185A JP H0513383 B2 JPH0513383 B2 JP H0513383B2
Authority
JP
Japan
Prior art keywords
package
terminals
chips
self
gto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60058951A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61218151A (ja
Inventor
Eiji Harada
Hitoshi Matsuzaki
Shigeo Tomita
Katsunori Senda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60058951A priority Critical patent/JPS61218151A/ja
Priority to DE19863609458 priority patent/DE3609458A1/de
Publication of JPS61218151A publication Critical patent/JPS61218151A/ja
Priority to US07/144,061 priority patent/US4884126A/en
Publication of JPH0513383B2 publication Critical patent/JPH0513383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W90/00—

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
JP60058951A 1985-03-23 1985-03-23 半導体装置 Granted JPS61218151A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60058951A JPS61218151A (ja) 1985-03-23 1985-03-23 半導体装置
DE19863609458 DE3609458A1 (de) 1985-03-23 1986-03-20 Halbleitervorrichtung mit parallel geschalteten selbstabschalt-halbleiterbauelementen
US07/144,061 US4884126A (en) 1985-03-23 1988-01-15 Semiconductor device having parallel-connected, self turn-off type semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60058951A JPS61218151A (ja) 1985-03-23 1985-03-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS61218151A JPS61218151A (ja) 1986-09-27
JPH0513383B2 true JPH0513383B2 (enExample) 1993-02-22

Family

ID=13099133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60058951A Granted JPS61218151A (ja) 1985-03-23 1985-03-23 半導体装置

Country Status (3)

Country Link
US (1) US4884126A (enExample)
JP (1) JPS61218151A (enExample)
DE (1) DE3609458A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393126A (ja) * 1986-10-08 1988-04-23 Fuji Electric Co Ltd 半導体装置
DE3643288A1 (de) * 1986-12-18 1988-06-30 Semikron Elektronik Gmbh Halbleiterbaueinheit
US5243217A (en) * 1990-11-03 1993-09-07 Fuji Electric Co., Ltd. Sealed semiconductor device with protruding portion
JPH065742A (ja) * 1992-06-22 1994-01-14 Mitsubishi Electric Corp 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法
JP2956363B2 (ja) * 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置
JP3225457B2 (ja) * 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
DE29900370U1 (de) * 1999-01-12 1999-04-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG, 59581 Warstein Leistungshalbleitermodul mit Deckel
EP1596436A1 (en) * 2004-05-12 2005-11-16 Seiko Epson Corporation Electronic circuit and method for manufacturing an electronic circuit
DE102006014582B4 (de) * 2006-03-29 2011-09-15 Infineon Technologies Ag Halbleitermodul
JP5098636B2 (ja) * 2007-12-27 2012-12-12 株式会社デンソー 半導体モジュール
US9345948B2 (en) 2012-10-19 2016-05-24 Todd Martin System for providing a coach with live training data of an athlete as the athlete is training
US10388596B2 (en) * 2014-11-20 2019-08-20 Nsk Ltd. Electronic part mounting heat-dissipating substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH448213A (fr) * 1966-03-16 1967-12-15 Secheron Atel Dispositif de contrôle à semi-conducteurs pour courant alternatif
US4193083A (en) * 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
JPS5386576A (en) * 1977-01-10 1978-07-31 Nec Corp Package for semiconductor element
US4394530A (en) * 1977-09-19 1983-07-19 Kaufman Lance R Power switching device having improved heat dissipation means
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
FR2506075A1 (fr) * 1981-05-18 1982-11-19 Radiotechnique Compelec Procede d'assemblage d'un dispositif semi-conducteur et de son boitier de protection
DE3127456A1 (de) * 1981-07-11 1983-02-03 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichteranordnung
DE3201296C2 (de) * 1982-01-18 1986-06-12 Institut elektrodinamiki Akademii Nauk Ukrainskoj SSR, Kiev Transistoranordnung
EP0088924A3 (de) * 1982-03-13 1985-10-23 BROWN, BOVERI & CIE Aktiengesellschaft Halbleiterbauelement in Modulbauweise
JPS5968958A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ組立体
DE3241509A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul

Also Published As

Publication number Publication date
US4884126A (en) 1989-11-28
DE3609458A1 (de) 1986-10-02
JPS61218151A (ja) 1986-09-27

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