JPH05129851A - Differential amplifier circuit - Google Patents

Differential amplifier circuit

Info

Publication number
JPH05129851A
JPH05129851A JP28530291A JP28530291A JPH05129851A JP H05129851 A JPH05129851 A JP H05129851A JP 28530291 A JP28530291 A JP 28530291A JP 28530291 A JP28530291 A JP 28530291A JP H05129851 A JPH05129851 A JP H05129851A
Authority
JP
Japan
Prior art keywords
differential amplifier
transistor
circuit
amplifier circuit
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28530291A
Other languages
Japanese (ja)
Other versions
JP3036925B2 (en
Inventor
Kazuhiko Inoue
和彦 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP3285302A priority Critical patent/JP3036925B2/en
Publication of JPH05129851A publication Critical patent/JPH05129851A/en
Application granted granted Critical
Publication of JP3036925B2 publication Critical patent/JP3036925B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Amplifiers (AREA)

Abstract

PURPOSE:To reduce the circuit current of the differential amplifier circuit pre- installing an emitter follower circuit in the differential amplifier circuit. CONSTITUTION:The emitter of a transistor Q3 is connected to the base of a transistor Q1 and one terminal of load resistors R1 and R3, the emitter of a transistor Q4 is connected to the base of a transistor Q2 and one terminal of load resistors R2 and R4, the other terminal of the load resistors R1 and R2 is connected to the collector of the transistor Q1, the other terminal of the load resistors R3 and R4 is connected to the collector of the transistor Q2 respectively and therefore, the circuit current can be reduced with low-noise and high-impedance characteristics.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は差動増幅回路に関し、特
にエミッタフォロワ回路を前置きし低ノイズ,高入力イ
ンピーダンス,低消費電力の差動増幅回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a differential amplifier circuit and, more particularly, to a differential amplifier circuit having an emitter follower circuit in front and having low noise, high input impedance and low power consumption.

【0002】[0002]

【従来の技術】従来の差動増幅回路において、差動増幅
回路の前にエミッタフォロワ回路を付加した回路例が、
図3である。図3において、トランジスタQ1,Q2
と、それらの共通エミッタに接続された定電流源I0,
負荷抵抗R1,R2とから構成された差動増幅回路と、
それに前置きしたトランジスタQ3,Q4及び定電流源
I1,I2からなるエミッタフォロワ回路がある。
2. Description of the Related Art An example of a conventional differential amplifier circuit in which an emitter follower circuit is added before the differential amplifier circuit is
It is FIG. In FIG. 3, transistors Q1 and Q2
And a constant current source I0 connected to their common emitter,
A differential amplifier circuit including load resistors R1 and R2;
There is an emitter follower circuit consisting of transistors Q3 and Q4 and constant current sources I1 and I2 placed in front of it.

【0003】定電流源I1,I2による電流は、エミッ
タフォロワ回路を構成するトランジスタQ3,Q4のバ
イアス電流となり、定電流源I0はトランジスタQ1,
Q2による差動増幅回路のバイアス電流となる。
The currents from the constant current sources I1 and I2 serve as bias currents for the transistors Q3 and Q4 which form the emitter follower circuit, and the constant current source I0 serves as the transistor Q1 and Q1.
It becomes the bias current of the differential amplifier circuit by Q2.

【0004】[0004]

【発明が解決しようとする課題】このような従来の差動
増幅回路では、高入力インピーダンスの特性を得るため
に、差動増幅回路の前にエミッタフォロワ回路を置いて
いるが、この回路で低ノイズの特性が必要であるとき、
エミッタフォロワ回路のバイアス電流を多くする必要が
あるが、そのためにはエミッタフォロワ回路のバイアス
電流を多くしなければならず、そのバイアス電流を多く
すると消費電流も増え、半導体集積回路とする場合には
電力消費が大きく、パッケージの許容損失内に収まらな
くなるという欠点がある。また電池駆動のセットにおい
ては、電池の寿命が短くなるという欠点もある。
In such a conventional differential amplifier circuit, an emitter follower circuit is placed in front of the differential amplifier circuit in order to obtain the characteristic of high input impedance. When noise characteristics are needed,
It is necessary to increase the bias current of the emitter follower circuit, but for that purpose, it is necessary to increase the bias current of the emitter follower circuit. If the bias current is increased, current consumption also increases. It has a drawback that it consumes a lot of power and does not fit within the power dissipation of the package. In addition, in a battery-driven set, there is a drawback that the life of the battery is shortened.

【0005】本発明の目的は、前記欠点を解決し、消費
電力を小さくした差動増幅回路を提供することにある。
An object of the present invention is to solve the above-mentioned drawbacks and to provide a differential amplifier circuit with reduced power consumption.

【0006】[0006]

【課題を解決するための手段】本発明の差動増幅回路の
構成は、差動増幅回路を構成する第1,第2のトランジ
スタとエミッタフォロワ回路を構成する第3,第4のト
ランジスタとを備えた差動増幅回路において、前記第3
のトランジスタのエミッタを前記第1のトランジスタの
ベース及び第1,第3の負荷抵抗に接続し、前記第4の
トランジスタのエミッタを前記第2のトランジスタのベ
ース及び第2,第4の負荷抵抗に接続し、前記第1のト
ランジスタのコレクタに前記第1,第2の負荷抵抗の共
通接続点を接続し、前記第2のトランジスタのコレクタ
に前記第3,第4の負荷抵抗の共通接続点を接続し、前
記第1,第2のトランジスタの共通エミッタに定電流源
を接続したことを特徴とする。
The structure of a differential amplifier circuit of the present invention comprises a first and a second transistor forming a differential amplifier circuit and a third and a fourth transistor forming an emitter follower circuit. In the differential amplifier circuit provided, the third
The emitter of the second transistor is connected to the base of the first transistor and the first and third load resistors, and the emitter of the fourth transistor is connected to the base of the second transistor and the second and fourth load resistors. And a common connection point of the first and second load resistors is connected to the collector of the first transistor, and a common connection point of the third and fourth load resistors is connected to the collector of the second transistor. And a constant current source is connected to the common emitter of the first and second transistors.

【0007】[0007]

【実施例】図1は本発明の一実施例の差動増幅回路を示
す回路図である。
1 is a circuit diagram showing a differential amplifier circuit according to an embodiment of the present invention.

【0008】図1において、本発明の一実施例の差動増
幅回路は、npn型トランジスタQ1,Q2と、負荷抵
抗R1,R2,R3,R4,及び定電流源I0とからな
る差動増幅回路と、それに前置きするエミッタフォロワ
回路を構成するnpn型ランジスタQ3,Q4と、電源
Vcc及び信号源Vsとを備えている。
In FIG. 1, a differential amplifier circuit according to an embodiment of the present invention comprises a npn-type transistor Q1 and Q2, load resistors R1, R2, R3 and R4, and a constant current source I0. And npn-type transistors Q3 and Q4 forming an emitter follower circuit, a power supply Vcc and a signal source Vs.

【0009】エミッタフォロワ回路のトランジスタQ
3,Q4のベース間には信号源Vsが印加し、そのトラ
ンジスタQ3,Q4のエミッタ間に負荷抵抗R1,R
2,及び抵抗R3,R4をそれぞれ直列に接続する。ま
たトランジスタQ3,Q4のそれぞれのエミッタは差動
増幅回路を構成するトランジスタQ1,Q2のそれぞれ
のベースに接続され、そのトランジスタQ1,Q2のコ
レクタは負荷抵抗R1,R2の共通接続点及び抵抗R
3,R4の共通接続点にそれぞれ接続され、またトラン
ジスタQ1,Q2の共通エミッタには定電流源I0が接
続さている。
Transistor Q of the emitter follower circuit
A signal source Vs is applied between the bases of Q3 and Q4, and load resistors R1 and R are applied between the emitters of the transistors Q3 and Q4.
2, and resistors R3 and R4 are connected in series. Further, the emitters of the transistors Q3 and Q4 are connected to the bases of the transistors Q1 and Q2 that form the differential amplifier circuit, and the collectors of the transistors Q1 and Q2 are the common connection point of the load resistors R1 and R2 and the resistor R.
3, R4 are connected to a common connection point of addition to the common emitter of the transistors Q1, Q2 are connected to a constant current source I0.

【0010】図2は本発明の他の実施例の差動増幅回路
を示す回路図である。
FIG. 2 is a circuit diagram showing a differential amplifier circuit according to another embodiment of the present invention.

【0011】図2において、本実施例は、図1の回路を
pnp型のトランジスタQ1,Q2,Q3,Q4で構成
したもので、これらトランジスタの変更にともない、接
続関係も変更されている。動作は図1と同様である。
In FIG. 2, the present embodiment is the one in which the circuit of FIG. 1 is composed of pnp type transistors Q1, Q2, Q3 and Q4, and the connection relationship is changed with the change of these transistors. The operation is similar to that of FIG.

【0012】[0012]

【発明の効果】以上、本発明の実施例によれば、エミッ
タフォロワ回路のバイアス電流を次の差動増幅回路のバ
イアス電流として使用する回路構成にしたので、低ノイ
ズ特性を必要とする差動増幅回路でエミッタフォロワ回
路のバイアス電流を多くした時、従来回路での回路電流
Iccは、Icc=I0+I1+I2(I0:差動増幅
回路のバイアス電流、I1,I2:エミッタフォロワ回
路のバイアス電流)となるが、本発明の差動増幅回路で
はエミッタフォロワ回路のバイアス電流を差動増幅回路
のバイアス電流とするため回路電流Iccは、Icc=
I0となり、従来回路より回路電流を少なくできるため
消費電力が小さくなるという効果がある。
As described above, according to the embodiment of the present invention, since the bias current of the emitter follower circuit is used as the bias current of the next differential amplifier circuit, the differential circuit requiring the low noise characteristic is used. When the bias current of the emitter follower circuit is increased in the amplifier circuit, the circuit current Icc in the conventional circuit becomes Icc = I0 + I1 + I2 (I0: bias current of the differential amplifier circuit, I1, I2: bias current of the emitter follower circuit). However, in the differential amplifier circuit of the present invention, since the bias current of the emitter follower circuit is used as the bias current of the differential amplifier circuit, the circuit current Icc is Icc =
Since it becomes I0, and the circuit current can be reduced as compared with the conventional circuit, there is an effect that the power consumption becomes small.

【0013】ここでトランジスタのノイズVNは次式の
ようになる。
The noise VN of the transistor is given by the following equation.

【0014】 [0014]

【0015】この式において、ノイズVNを1mV以下
にしようとすると、バイアス電流Icを5mA以上流さ
なくてはならない。これを従来回路の回路電流の式と本
実施例の式にあてはめると、従来回路では、Icc=I
0+I1+I2=10mA+5mA+5mA=20mA
となるが、本実施例の回路では、Icc=I0=10m
Aとなり、従来回路の回路電流の半分でよいことにな
る。
In this equation, if the noise VN is to be set to 1 mV or less, the bias current Ic must be 5 mA or more. When this is applied to the formula of the circuit current of the conventional circuit and the formula of the present embodiment, Icc = I in the conventional circuit.
0 + I1 + I2 = 10mA + 5mA + 5mA = 20mA
However, in the circuit of this embodiment, Icc = I0 = 10 m
A, which is half the circuit current of the conventional circuit.

【0016】また、入力インピーダンスも従来回路と同
様に高入力インピーダンスとなる。また、図1のnpn
型トランジスタを、図2の様に、pnp型トランジスタ
にしても同様の効果がある。
Also, the input impedance becomes a high input impedance as in the conventional circuit. In addition, npn in FIG.
If the type transistor is a pnp type transistor as shown in FIG. 2, the same effect can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の差動増幅回路を示す回路図
である。
FIG. 1 is a circuit diagram showing a differential amplifier circuit according to an embodiment of the present invention.

【図2】本発明の他の実施例の回路図である。FIG. 2 is a circuit diagram of another embodiment of the present invention.

【図3】従来の差動増幅回路を示す回路図である。FIG. 3 is a circuit diagram showing a conventional differential amplifier circuit.

【符号の説明】[Explanation of symbols]

Q1,Q2 差動増幅回路を構成するトランジスタ Q3,Q4 エミッタフォロワ回路を構成するトラン
ジスタ R1〜R4 負荷抵抗 I0〜I2 バイアス電流用定電流源 Vs 入力信号源 Vcc 電源
Q1, Q2 Transistors constituting differential amplifier circuit Q3, Q4 Transistors constituting emitter follower circuit R1 to R4 Load resistors I0 to I2 Constant current source for bias current Vs Input signal source Vcc power source

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 差動増幅回路を構成する第1,第2のト
ランジスタとエミッタフォロワ回路を構成する第3,第
4のトランジスタとを備えた差動増幅回路において、前
記第3のトランジスタのエミッタを前記第1のトランジ
スタのベース及び第1,第3の負荷抵抗に接続し、前記
第4のトランジスタのエミッタを前記第2のトランジス
タのベース及び第2,第4の負荷抵抗に接続し、前記第
1のトランジスタのコレクタに前記第1,第2の負荷抵
抗の共通接続点を接続し、前記第2のトランジスタのコ
レクタに前記第3,第4の負荷抵抗の共通接続点を接続
し、前記第1,第2のトランジスタの共通エミッタに定
電流源を接続したことを特徴とする差動増幅回路。
1. A differential amplifier circuit comprising first and second transistors forming a differential amplifier circuit and third and fourth transistors forming an emitter follower circuit, wherein the emitter of the third transistor is an emitter. Is connected to the base of the first transistor and the first and third load resistors, and the emitter of the fourth transistor is connected to the base of the second transistor and the second and fourth load resistors, The common connection point of the first and second load resistors is connected to the collector of the first transistor, and the common connection point of the third and fourth load resistors is connected to the collector of the second transistor, A differential amplifier circuit characterized in that a constant current source is connected to a common emitter of the first and second transistors.
【請求項2】 第1乃至第4のトランジスタがすべてn
pn型またはpnp型である請求項1記載の差動増幅回
路。
2. The first to fourth transistors are all n
The differential amplifier circuit according to claim 1, which is a pn type or a pnp type.
JP3285302A 1991-10-31 1991-10-31 Differential amplifier circuit Expired - Lifetime JP3036925B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3285302A JP3036925B2 (en) 1991-10-31 1991-10-31 Differential amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3285302A JP3036925B2 (en) 1991-10-31 1991-10-31 Differential amplifier circuit

Publications (2)

Publication Number Publication Date
JPH05129851A true JPH05129851A (en) 1993-05-25
JP3036925B2 JP3036925B2 (en) 2000-04-24

Family

ID=17689770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3285302A Expired - Lifetime JP3036925B2 (en) 1991-10-31 1991-10-31 Differential amplifier circuit

Country Status (1)

Country Link
JP (1) JP3036925B2 (en)

Also Published As

Publication number Publication date
JP3036925B2 (en) 2000-04-24

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