JPH0510316B2 - - Google Patents

Info

Publication number
JPH0510316B2
JPH0510316B2 JP61179624A JP17962486A JPH0510316B2 JP H0510316 B2 JPH0510316 B2 JP H0510316B2 JP 61179624 A JP61179624 A JP 61179624A JP 17962486 A JP17962486 A JP 17962486A JP H0510316 B2 JPH0510316 B2 JP H0510316B2
Authority
JP
Japan
Prior art keywords
growth
crystal
temperature
heater
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61179624A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6335492A (ja
Inventor
Masahiko Kitagawa
Yoshitaka Tomomura
Tomoji Yamagami
Shigeo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61179624A priority Critical patent/JPS6335492A/ja
Priority to US07/078,564 priority patent/US4869776A/en
Priority to GB8717968A priority patent/GB2194554B/en
Publication of JPS6335492A publication Critical patent/JPS6335492A/ja
Publication of JPH0510316B2 publication Critical patent/JPH0510316B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP61179624A 1986-07-29 1986-07-29 化合物半導体結晶の成長方法 Granted JPS6335492A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61179624A JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法
US07/078,564 US4869776A (en) 1986-07-29 1987-07-28 Method for the growth of a compound semiconductor crystal
GB8717968A GB2194554B (en) 1986-07-29 1987-07-29 A method for the growth of a compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61179624A JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS6335492A JPS6335492A (ja) 1988-02-16
JPH0510316B2 true JPH0510316B2 (enExample) 1993-02-09

Family

ID=16069019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61179624A Granted JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS6335492A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4670002B2 (ja) * 2004-07-20 2011-04-13 学校法人早稲田大学 窒化物単結晶の製造方法
JP5272390B2 (ja) 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Also Published As

Publication number Publication date
JPS6335492A (ja) 1988-02-16

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