JPH05101935A - Garnet polycrystalline film for optical magnetic recording medium, optical magnetic recording medium, and optical magnetic recording disk - Google Patents

Garnet polycrystalline film for optical magnetic recording medium, optical magnetic recording medium, and optical magnetic recording disk

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Publication number
JPH05101935A
JPH05101935A JP3299284A JP29928491A JPH05101935A JP H05101935 A JPH05101935 A JP H05101935A JP 3299284 A JP3299284 A JP 3299284A JP 29928491 A JP29928491 A JP 29928491A JP H05101935 A JPH05101935 A JP H05101935A
Authority
JP
Japan
Prior art keywords
garnet
layer
film
recording medium
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3299284A
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Japanese (ja)
Other versions
JP3084580B2 (en
Inventor
Kenji Shimokawa
健二 下川
Kiichi Kawamura
紀一 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Japan Broadcasting Corp
Original Assignee
Nippon Hoso Kyokai NHK
Nippon Steel Corp
Japan Broadcasting Corp
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Application filed by Nippon Hoso Kyokai NHK, Nippon Steel Corp, Japan Broadcasting Corp filed Critical Nippon Hoso Kyokai NHK
Priority to JP03299284A priority Critical patent/JP3084580B2/en
Publication of JPH05101935A publication Critical patent/JPH05101935A/en
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Publication of JP3084580B2 publication Critical patent/JP3084580B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To realize a polycrystalline garnet film comprising fine crystal grains on a glass substrate and provide a high performance polycrystalline optical magnetic recording medium using the polycrystalline garnet film. CONSTITUTION:There is laminated bismuth-substituted garnet where a crystal lattice constant of the former is different from the latter by 0.3% or more, and there is separated fine particle garnet polycrystal which is 1mum or less and which has a smaller crystal particle diameter of a first layer from its interface. Such a garnet film has reduced medium noise, and is very useful for an optical magnetic recording medium or a Kerr rotation angle reinforcing layer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はガーネット多結晶光磁気
記録媒体の粒界由来雑音低減に有効な微細結晶粒ガーネ
ット多結晶膜とその応用に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine crystal grain garnet polycrystalline film effective for reducing noises from grain boundaries of a garnet polycrystalline magneto-optical recording medium and its application.

【0002】[0002]

【従来の技術】ガーネット型酸化物は光磁気記録媒体、
光アイソレーター、電流・磁界センサーなど記録材料あ
るいは磁気光学デバイスとして優れた性能を示す材料で
ある。一般的に、この材料は非晶質状態では非磁性であ
るため、単結晶あるいは多結晶状態で利用される。しか
しながら、安価に作製できる多結晶ガーネットは単結晶
ガーネットに比べ粒界等の存在のため、光学的、磁気的
あるいは磁気光学的特性に劣る。特に光磁気記録媒体と
して応用するには、多結晶ガーネットの性能向上が必須
である。
2. Description of the Related Art Garnet type oxide is a magneto-optical recording medium,
It is a material that exhibits excellent performance as a recording material or magneto-optical device such as an optical isolator and a current / magnetic field sensor. In general, this material is non-magnetic in the amorphous state and is therefore used in the single crystal or polycrystal state. However, polycrystalline garnet, which can be manufactured at low cost, is inferior in optical, magnetic or magneto-optical properties to single crystal garnet because of the existence of grain boundaries and the like. In particular, for application as a magneto-optical recording medium, it is essential to improve the performance of polycrystalline garnet.

【0003】光磁気記録は高密度、高信頼性を実現する
最も有力な技術である。高耐食性を示し短波長での磁気
光学効果の大きいガーネット材料は、すでに実現されて
いるアモルファス希土類−遷移金属の欠点(低耐食性と
小さな磁気光学効果)を克服し得る次世代光磁気媒体と
して最も有望視されている。記録密度をさらに向上させ
る方法として、ガーネットの透光性を利用した多層膜に
よる多重記録も提案されている(伊藤ら:第10回日本
応用磁気学会学術講演会概要集、31(1986))。
Magneto-optical recording is the most effective technique for realizing high density and high reliability. Garnet material, which has high corrosion resistance and high magneto-optical effect at short wavelength, is the most promising next-generation magneto-optical medium that can overcome the drawbacks (low corrosion resistance and small magneto-optical effect) of amorphous rare earth-transition metals that have already been realized. Is being watched. As a method for further improving the recording density, multiple recording using a multilayer film utilizing the translucency of garnet has also been proposed (Ito et al .: Proc. 10th Annual Meeting of the Applied Magnetics Society of Japan, 31 (1986)).

【0004】また、ガーネット膜を従来の非晶質遷移金
属希土類合金やPtあるいはPdとCoの多層膜などの
他の金属系光磁気記録媒体と組合わせれば、その大きな
ファラデー回転角を利用した磁気光学効果の増強が可能
であり、光磁気記録媒体の高性能化に有効であることが
知られている。GGG(ガリウム・ガドリニウム・ガー
ネット)単結晶基板上に形成されるBi置換ガーネット
膜は記録再生特性において搬送波・雑音比(標準条件で
の信号・雑音比)で60dBという高性能を示す(H.
Kano et al:IEEE Trans. Ma
gn. MAG−25(5)、3737(198
9))。しかしながら、安価なガラス基板上等に形成さ
れるガーネット膜の場合は多結晶質であり、結晶粒界に
由来する光学的不均一(屈折率の不均一分布)のための
媒体雑音が大きいという欠点がある。
When the garnet film is combined with a conventional amorphous transition metal rare earth alloy or another metal-based magneto-optical recording medium such as Pt or Pd / Co multilayer film, the magnetic field utilizing the large Faraday rotation angle is used. It is known that the optical effect can be enhanced and it is effective for improving the performance of the magneto-optical recording medium. A Bi-substituted garnet film formed on a GGG (gallium gadolinium garnet) single crystal substrate exhibits high performance of 60 dB in terms of carrier / noise ratio (signal / noise ratio under standard conditions) in recording / reproducing characteristics (H.
Kano et al: IEEE Trans. Ma
gn. MAG-25 (5), 3737 (198)
9)). However, in the case of a garnet film formed on an inexpensive glass substrate, etc., it is polycrystalline and has a large medium noise due to optical nonuniformity (nonuniform distribution of refractive index) originating from crystal grain boundaries. There is.

【0005】ガラス基板等の上に高性能多結晶ガーネッ
ト膜を形成するためには結晶粒微細化が結晶粒界起因の
光学的不均一の低減に有効である(例えば、M.Abe
and M.Gomi;J.Magn.Magn.M
ater.、84、222(1990))。結晶粒微細
化の方法としては添加元素(例えば、伊藤ら;第12回
応用磁気学会学術講演会概要集、127(1989))
あるいは急速(熱処理)結晶化法(T.Suzuki
et al;第13回応用磁気学会学術講演会概要集、
49(1988))がある。
In order to form a high-performance polycrystalline garnet film on a glass substrate or the like, grain refinement is effective in reducing optical nonuniformity due to grain boundaries (eg, M. Abe).
and M.D. Gomi; J. Magn. Magn. M
ater. , 84, 222 (1990)). Additive elements (for example, Ito et al .; Proc. 12th Annual Meeting of the Applied Magnetics Society of Japan, 127 (1989))
Alternatively, a rapid (heat treatment) crystallization method (T. Suzuki
et al; Proceedings of the 13th Applied Magnetics Society Academic Conference,
49 (1988)).

【0006】庄野はガーネット膜の完全結晶化後の透過
電子顕微鏡観察を行い、格子定数が約1%異なるGGG
単結晶(111)面上に形成したガーネット膜には微細
結晶粒が観察されるが、格子定数が約0.3%異なるG
CGMZ(カルシウム、マグネシウム、ジルコニウム置
換ガドリニウム・ガリウム・ガーネット)単結晶基板上
では微細結晶粒は観察されず、エピタキシャル成長して
いることを報告している(庄野;“光と磁気−その基礎
と応用−”、昭和63年応用磁気セミナーテキスト、1
07(1988))。
Shono conducted a transmission electron microscope observation after the complete crystallization of the garnet film and found that the lattice constant differs by about 1%.
Fine crystal grains are observed in the garnet film formed on the single crystal (111) plane, but the lattice constant differs by about 0.3%.
It has been reported that fine crystal grains are not observed on CGMZ (calcium, magnesium, zirconium-substituted gadolinium gallium garnet) single crystal substrates, and that epitaxial growth occurs (Shono; “Light and magnetism-its basics and applications- , 1988 Applied Magnetics Seminar text, 1
07 (1988)).

【0007】本発明者らは種々の面方位のGGG単結晶
基板上に結晶化後ガーネット構造を有するBi、Ga置
換DyFeガーネットの非晶質膜を作製して、熱処理に
よる結晶化過程を詳細に観察し、結晶格子定数が±0.
3%以上異なる単結晶基板との界面からガーネットの配
向性微細結晶粒が非晶質膜内部あるいは非晶質膜表面よ
りも優先的に発生していることを確認した。このこと
は、結晶化後ガーネット構造を有する非晶質膜とガーネ
ット単結晶界面では非晶質膜の内部あるいはガーネット
単結晶に接していない表面よりも、結晶核生成に伴う界
面エネルギーの増加が小さく、この部分での不均一核生
成が優先的に起こることによると考えられる。また、格
子定数のミスフィットのためエピタキシャル成長は阻害
され、単結晶基板上においても厳密な意味での単結晶膜
は形成されず、配向性微結晶となると考えられる。
The inventors of the present invention prepared Bi, Ga-substituted DyFe garnet amorphous films having a garnet structure after crystallization on GGG single crystal substrates of various plane orientations, and detailed the crystallization process by heat treatment. Observed, the crystal lattice constant was ± 0.
It was confirmed that the oriented fine crystal grains of garnet were preferentially generated inside the amorphous film or on the surface of the amorphous film from the interface with the single crystal substrate different by 3% or more. This means that at the interface between the amorphous film having a garnet structure after crystallization and the garnet single crystal, the increase in the interface energy due to the formation of crystal nuclei is smaller than that at the inside of the amorphous film or the surface not in contact with the garnet single crystal. , It is considered that heterogeneous nucleation in this part occurs preferentially. Further, it is considered that the epitaxial growth is hindered due to the misfit of the lattice constant, and the single crystal film in the strict sense is not formed even on the single crystal substrate, and it becomes oriented microcrystals.

【0008】[0008]

【発明が解決しようとする課題】本発明は、微細な結晶
粒からなる多結晶ガーネット膜を安価な基板の上に実現
し、それを応用することによって高性能多結晶光磁気記
録媒体の提供を目的とする。
SUMMARY OF THE INVENTION The present invention provides a high-performance polycrystalline magneto-optical recording medium by realizing a polycrystalline garnet film consisting of fine crystal grains on an inexpensive substrate and applying it. To aim.

【0009】[0009]

【課題を解決するための手段】本発明は、基板上に形成
した微細結晶粒よりなるガーネット多結晶膜およびそれ
を応用した高性能光磁気記録媒体を対象とするものであ
る。ここで基板とは、ガラス等の非晶質、ガーネットも
含めた多結晶質、およびガーネットも含めた単結晶質よ
りなる基板を含む。
The present invention is directed to a garnet polycrystalline film formed of fine crystal grains formed on a substrate and a high performance magneto-optical recording medium to which the garnet polycrystalline film is applied. Here, the substrate includes a substrate made of an amorphous material such as glass, a polycrystalline material including garnet, and a single crystalline material including garnet.

【0010】本発明では、Bix 3-X Y Fe3-Y
12(ここで、0≦X≦3、0≦Y≦5、Rはイットリウ
ムを含む1種類以上の希土類元素、NはGa、Alある
いはInを表す)の組成で代表される多結晶ガーネット
を対象とする。1つの層のガーネット結晶粒径がもう1
つの層のガーネット結晶粒径よりも小さくかつ1μm以
下の結晶粒径である多結晶ガーネットを実現するため
に、隣接するガーネット層間の結晶格子定数は±0.3
%以上、好ましくは±0.5%以上異なることが特徴で
ある。結晶化過程において、ガーネット層とガーネット
層あるいは結晶化後ガーネット構造を有する非晶質層の
界面からの微細結晶粒の発生を利用して結晶粒を微細化
する。また、1kOe以上の保磁力を調整するために
は、酸素を除いた残余の原子量比で5at%以下のCu
を添加する。3層以上の多層膜においても、少なくとも
1組以上の2層について、本発明を応用すれば多重記録
光磁気記録媒体として使用できる。このような微細結晶
ガーネット2層膜の上には、非晶質遷移金属希土類合金
やPtあるいはPdとCoの多層膜を積層することが可
能であり、磁気光学効果増強膜としても応用できる。
In the present invention, Bi x R 3-X N Y Fe 3-YO
12 Polycrystalline garnet represented by the composition (where 0 ≦ X ≦ 3, 0 ≦ Y ≦ 5, R is one or more kinds of rare earth elements including yttrium, and N is Ga, Al or In). And Garnet grain size of one layer is another
In order to realize a polycrystalline garnet having a crystal grain size smaller than the garnet grain size of one layer and 1 μm or less, the crystal lattice constant between adjacent garnet layers is ± 0.3.
It is characterized by a difference of not less than%, preferably ± 0.5%. In the crystallization process, the generation of fine crystal grains from the interface between the garnet layer and the garnet layer or the amorphous layer having a garnet structure after crystallization is used to refine the crystal grains. Further, in order to adjust the coercive force of 1 kOe or more, the residual atomic weight ratio excluding oxygen is 5 at% or less of Cu.
Is added. Even in a multilayer film of three or more layers, at least one set of two layers can be used as a multiple recording magneto-optical recording medium by applying the present invention. An amorphous transition metal rare earth alloy or a Pt or Pd / Co multilayer film can be laminated on such a fine crystal garnet two-layer film, and can also be applied as a magneto-optical effect enhancing film.

【0011】多層膜結晶化に際しては、1)成膜中に基
板温度を上げて結晶化させながら積層するか、2)1層
ずつ成膜後熱処理によって積層するか、3)隣接する層
の結晶化温度が異なるように非晶質のまま積層し、積層
後、2つ以上の温度で熱処理結晶化するか、あるいは
4)隣接する層の結晶化温度が異なるガーネット層を基
板温度を上げながら1層以上を成膜中に結晶化しつつ2
層以上積層し、成膜後に熱処理によって残層を結晶化す
るかのいずれでもよい。
In crystallization of a multilayer film, 1) stacking is performed while crystallizing by raising the substrate temperature during film formation, 2) stacking one layer at a time by heat treatment after film formation, or 3) crystal of adjacent layers. Amorphous layers are laminated so that the crystallization temperatures are different, and after the layers are laminated, they are heat-treated and crystallized at two or more temperatures, or 4) garnet layers with different crystallization temperatures of adjacent layers are raised while increasing the substrate temperature. While crystallizing more than one layer during film formation 2
Any one of stacking more than one layer and crystallizing the remaining layer by heat treatment after film formation may be used.

【0012】[0012]

【作用】本発明者らは、従来の技術に記載の単結晶基板
での実験結果から、ガーネット多結晶層・ガーネット多
結晶層あるいは結晶化後ガーネット構造を有する非晶質
層の界面おいても微細化効果が期待できると予測した。
そこで、ガラス基板上に結晶化後の格子定数が±0.3
%以上、好ましくは±0.5%以上異なるガーネット層
を2層形成し、その界面からの微細結晶粒の優先的発生
を実現した。
The inventors of the present invention have found from the results of experiments on a single crystal substrate described in the prior art that even at the interface between a garnet polycrystal layer / garnet polycrystal layer or an amorphous layer having a garnet structure after crystallization. It was predicted that the miniaturization effect could be expected.
Therefore, the lattice constant after crystallization on the glass substrate is ± 0.3.
%, Preferably ± 0.5% or more, two different garnet layers were formed, and preferential generation of fine crystal grains from the interface was realized.

【0013】さらに、本発明者らは光磁気媒体用ガーネ
ット膜にCuを添加することによって5kOe以上の保
磁力が実現できることを発見し(特開平1−31676
2号公報)、本発明でもCu添加が保磁力増大に有効で
あることを確認した。本発明の2層膜の上に、記録層と
してTbFeCoやPtあるいはPdとCoの多層膜を
形成し、再生時に光学的に均一な微細結晶ガーネット層
の大きなファラデー回転角を利用して大きな感度の再生
信号を取り出した。
Furthermore, the present inventors have discovered that a coercive force of 5 kOe or more can be realized by adding Cu to the garnet film for magneto-optical media (Japanese Patent Laid-Open No. 31676/1993).
No. 2), it was confirmed that addition of Cu is also effective for increasing coercive force in the present invention. A multi-layered film of TbFeCo or Pt or Pd and Co is formed as a recording layer on the two-layer film of the present invention, and a large Faraday rotation angle of an optically uniform fine crystal garnet layer is utilized during reproduction to achieve high sensitivity. The playback signal was taken out.

【0014】さらに本発明の微細結晶粒ガーネット多結
晶膜を5.25インチ直径のガラスディスク上に形成し
て、粒界由来の雑音の極めて小さな光磁気ディスクを作
製することができた。このようなガーネット多層膜は、
スパッタ法、熱分解法等によって基板上に形成される。
スパッタ法ではArガスあるいはArと酸素の混合ガス
を使用し、基板加熱やバイアス電圧の印加を行ってもよ
い。同種類同組成の膜においても、結晶化温度は成膜中
に結晶化する場合と成膜後に熱処理によって結晶化する
場合では、一般に異なる。成膜中結晶化するには基板温
度は少なくとも、400℃以上にする必要がある。成膜
後熱処理で結晶化するには、少なくとも450℃以上で
熱処理する必要がある。
Further, the fine crystal grain garnet polycrystalline film of the present invention was formed on a glass disk having a diameter of 5.25 inches, whereby a magneto-optical disk having extremely small noise due to grain boundaries could be manufactured. Such a garnet multilayer film,
It is formed on the substrate by a sputtering method, a thermal decomposition method, or the like.
In the sputtering method, Ar gas or a mixed gas of Ar and oxygen may be used to heat the substrate and apply a bias voltage. Even for films of the same type and composition, the crystallization temperature is generally different between crystallization during film formation and crystallization by heat treatment after film formation. To crystallize during film formation, the substrate temperature must be at least 400 ° C or higher. In order to crystallize by heat treatment after film formation, it is necessary to perform heat treatment at 450 ° C. or higher.

【0015】結晶格子定数が±0.3%以上異なるガー
ネットの組合せとしては、Bix 3-X Y Fe3-Y
12(ここで、0≦X≦3、0≦Y≦5、Rはイットリウ
ムを含む1種類以上の希土類元素、NはGa、Alある
いはInを表す)の組成で代表される多結晶ガーネット
が、光磁気記録媒体用として最も有望である。イオン半
径が大きいBiなどで希土類サイトを置換すると結晶格
子定数はXの増加と共に大きくなる。Feサイトを置換
する元素では、イオン半径の小さなGaやAlなどを用
いると結晶格子定数はYの増加と共に小さくなる。ま
た、結晶化温度もガーネットの種類や組成によって異な
る。従って、結晶格子定数が±0.3%以上異なるガー
ネットの組合せの例には、Gd3 Fe5 12(12.4
7A)/Dy3 Fe5 12(12.41A);格子定数
差0.5%、GGG(12.38A)/Tb3 Fe5
12(12.44A);格子定数差0.5%のような異種
の元素を含む組合せのガーネットの他に、Bi0.5 Dy
2.5 Fe5 12(12.44A)/Bi2 Dy1 Fe5
12(12.51A);格子定数差0.6%やY3 Al
1 Fe4 12(12.31A)/Y3 Al4 Fe1 12
(12.09A);格子定数差1.8%などの同種類の
元素から成るがその組成の異なるガーネットの組合せも
ある。ここでかっこ内の数字は結晶格子定数を表す。
Gar having different crystal lattice constants of ± 0.3% or more
As a combination of nets, BixR 3-XNYFe3-YO
12(Where 0 ≦ X ≦ 3, 0 ≦ Y ≦ 5, R is yttria
One or more kinds of rare earth elements including aluminum, N is Ga or Al
(Representing In), a polycrystalline garnet represented by the composition
However, it is the most promising for magneto-optical recording media. AEON half
If the rare earth site is replaced with Bi, etc., which has a large diameter, it will be crystalline
The child constant increases as X increases. Replace Fe site
For the element to be used, Ga or Al with a small ionic radius is used.
The crystal lattice constant decreases as Y increases. Well
Also, the crystallization temperature varies depending on the type and composition of garnet.
It Therefore, the crystal lattice constants differing by ± 0.3% or more
An example of a net combination is Gd3FeFiveO12(12.4
7A) / Dy3FeFiveO12(12.41A); lattice constant
0.5% difference, GGG (12.38A) / Tb3FeFiveO
12(12.44A); Different types with a lattice constant difference of 0.5%
In addition to the combination of garnet containing the elements of0.5Dy
2.5FeFiveO12(12.44A) / Bi2Dy1FeFive
O12(12.51A); lattice constant difference of 0.6% or Y3Al
1FeFourO12(12.31A) / Y3AlFourFe1O12
(12.09A); Lattice constant difference of 1.8%
A combination of garnets that consist of elements but have different compositions
is there. Here, the number in parentheses represents the crystal lattice constant.

【0016】ガーネット多層膜中の各層は、単にガーネ
ット構造を下地に必要とする準安定層を形成するための
多結晶下地としての利用も併せて可能である。
Each of the layers in the garnet multilayer film can also be used as a polycrystalline underlayer simply for forming a metastable layer which requires a garnet structure as an underlayer.

【0017】[0017]

【実施例】以下に本発明の実施例を挙げ図面を参照しな
がら説明する。これらのガーネット膜の高周波スパッタ
法による作製条件は以下のとおりである。 ターゲット:直径80mmのセラミックターゲット 高周波パワー:200W スパッタガス:アルゴンあるいはアルゴンと酸素の混合
ガス ガス圧:10〜30mTorr(酸素分圧30%以下) 基板:ガラス 基板温度:10〜550℃ 膜厚:100〜5000A 熱処理温度:540℃〜750℃(大気中) 組成決定法:金属元素と酸素の原子量比を8対12と仮
定し、金属元素のみを発光分析から評価し算出する。
Embodiments of the present invention will be described below with reference to the drawings. The conditions for producing these garnet films by the high frequency sputtering method are as follows. Target: Ceramic target with a diameter of 80 mm High frequency power: 200 W Sputtering gas: Argon or mixed gas of argon and oxygen Gas pressure: 10-30 mTorr (oxygen partial pressure 30% or less) Substrate: Glass Substrate temperature: 10-550 ° C Film thickness: 100 ˜5000 A Heat treatment temperature: 540 ° C. to 750 ° C. (in air) Composition determination method: Assuming that the atomic weight ratio of the metal element and oxygen is 8 to 12, only the metal element is evaluated and calculated by optical emission analysis.

【0018】実施例1 Bi2.6 Dy0.4 Ga1.1 Fe3.9 12(格子定数1
2.56A、ガラス基板上に直接形成した時の平均結晶
粒径12μm、以下a層と略記)とBi2.0 Dy 1.0
1.5 Fe3.5 12(格子定数12.50A、a層との
格子定数差0.5%、ガラス基板に直接形成した時の平
均結晶粒径3μm、以下b層と略記)の組合せで、スパ
ッタ法での請求項記載のガーネット多結晶膜の作製例を
挙げる。
Example 1 Bi2.6Dy0.4Ga1.1Fe3.9O12(Lattice constant 1
2.56A, average crystal when directly formed on a glass substrate
Particle size 12 μm, hereinafter abbreviated as a layer) and Bi2.0Dy 1.0G
a1.5Fe3.5O12(Lattice constant 12.50A, with a layer
Lattice constant difference 0.5%, flatness when directly formed on glass substrate
A uniform crystal grain size of 3 μm, hereinafter abbreviated as layer b)
Example of making a garnet polycrystalline film according to the claim by the Tatta method
I will give you.

【0019】成膜後、熱処理で結晶化する場合、a層の
結晶化温度は560℃でb層のそれは620℃である。
成膜中に結晶化するには500℃以上に基板温度を上げ
る必要がある。基板温度500℃にてbおよびa層を積
層して、請求項1記載の2層膜を作製した。この時のa
層の平均結晶粒径は0.1μmであった。
When the film is crystallized by heat treatment after the film formation, the crystallization temperature of the a layer is 560 ° C. and that of the b layer is 620 ° C.
To crystallize during film formation, it is necessary to raise the substrate temperature to 500 ° C. or higher. The b and a layers were laminated at a substrate temperature of 500 ° C. to produce a two-layer film according to claim 1. A at this time
The average crystal grain size of the layer was 0.1 μm.

【0020】同じスパッタ条件でa層を積層する際に複
合ターゲットを用いて、3at%のCuを添加し、5k
Oeの保磁力を達成し、請求項2記載の2層膜を作製し
た。この時のa層の平均結晶粒径は0.1μmであっ
た。非晶質のaおよびb層をb/a/bの順に基板温度
を上げずに交互に計3層積層した後、まず560℃の熱
処理でa層のみ結晶化させ、次に620℃の熱処理で2
つのb層を結晶化させて請求項3記載の3層膜を作製し
た。この時のb層の平均結晶粒径は0.2μmであっ
た。
3 at% Cu was added using a composite target when laminating the a layer under the same sputtering conditions, and 5 k was added.
A coercive force of Oe was achieved, and the two-layer film according to claim 2 was produced. At this time, the average crystal grain size of the layer a was 0.1 μm. After a total of 3 layers of amorphous a and b layers are alternately laminated in the order of b / a / b without increasing the substrate temperature, first, only the a layer is crystallized by heat treatment at 560 ° C., and then heat treatment at 620 ° C. In 2
The three b layers were crystallized to produce a three-layer film according to claim 3. At this time, the average crystal grain size of the layer b was 0.2 μm.

【0021】基板温度500℃でCuを2at%添加し
たa層とb層を、a/b/a/b/a/bの順で交互に
6層積層し、請求項4記載の6層膜を作製した。この時
のa層の保磁力は3.5kOeで、平均結晶粒径は0.
1μmであった。熱処理結晶化してbおよびa層を積
層、その上に合金ターゲットを用いてアモルファスTb
FeCo膜を積層し、請求項5記載の膜を作製した。こ
の時のa層の平均結晶粒径は0.1μmであり、基板側
より入射した波長514nmのレーザー光によるTbF
eCoのカー回転角は10倍に増強された。
6. A six-layer film according to claim 4, wherein six layers a and b containing 2 at% of Cu added at a substrate temperature of 500 ° C. are alternately laminated in the order of a / b / a / b / a / b. Was produced. At this time, the coercive force of the layer a was 3.5 kOe, and the average crystal grain size was 0.1.
It was 1 μm. Crystallization is performed by heat treatment to stack layers b and a, and an amorphous Tb layer is formed on the layers by using an alloy target.
An FeCo film was laminated to form a film according to claim 5. At this time, the average crystal grain size of the a layer was 0.1 μm, and TbF generated by the laser beam having a wavelength of 514 nm incident from the substrate side was used.
The Kerr rotation angle of eCo was enhanced 10 times.

【0022】基板温度500℃にてb層を積層し、その
上に直径150ミリのCu添加セラミックターゲットを
用いて、3at%のCuを添加し、5kOeの保磁力を
達成したa層を形成した2層膜を5.25インチガラス
ディスク基板に作製した。熱吸収と光反射を兼ねたCr
膜をこの2層膜の上に直径150ミリの金属ターゲット
を用いて形成して、請求項6記載の光磁気ディスクを作
製した。このディスクで波長514nmのArレーザー
を用い、50dB以上の搬送波・雑音比を達成した。
Layer b was laminated at a substrate temperature of 500 ° C., and 3 at% Cu was added to the layer b using a Cu-added ceramic target having a diameter of 150 mm to form layer a having a coercive force of 5 kOe. A two-layer film was prepared on a 5.25 inch glass disk substrate. Cr that combines heat absorption and light reflection
A film was formed on the two-layer film by using a metal target having a diameter of 150 mm to manufacture a magneto-optical disk according to claim 6. With this disc, an Ar laser with a wavelength of 514 nm was used to achieve a carrier-noise ratio of 50 dB or more.

【0023】いずれの場合も、1つの多結晶ガーネット
層の結晶粒径はもう1つの層よりも小さくかつ1μm以
下で均一な膜が作製できた。表1に他の実施例について
まとめた。
In each case, a uniform film could be produced in which the crystal grain size of one polycrystalline garnet layer was smaller than that of the other layer and was 1 μm or less. Table 1 summarizes other examples.

【0024】[0024]

【表1】 [Table 1]

【0025】実施例1)〜9)のいずれの場合において
もガーネット層とガーネット層あるいは結晶化後ガーネ
ット構造を有する非晶質層の界面より、結晶化過程にお
いてその結晶粒径よりも小さくかつ粒径1μm以下の微
細多結晶が成長したガーネット2層膜が得られた。これ
らの微細多結晶ガーネット膜は光磁気記録媒体として極
めて有望であると考えられることを、以下に写真図を用
いて具体的に説明する。
In any of Examples 1) to 9), from the interface between the garnet layer and the garnet layer or the amorphous layer having a garnet structure after crystallization, the grain size is smaller and smaller than the crystal grain size in the crystallization process. A garnet two-layer film in which fine polycrystals having a diameter of 1 μm or less were grown was obtained. The fact that these fine polycrystalline garnet films are considered to be extremely promising as a magneto-optical recording medium will be specifically described below with reference to the photographic drawings.

【0026】図1は、走査型電子顕微鏡による実施例2
のa層の結晶化途中の断面写真である。結晶化したb層
(平均結晶粒径2μm)の界面(領域A)より0.5μ
m以下の微細結晶粒(領域B)が優先的に発生している
ことがわかる。ここで、領域Cは非晶質領域である。図
2では、a)実施例2の2層膜と、b)ガラス基板上に
直接形成した実施例2のb層単層膜での透過光学顕微鏡
写真を示す。実施例2の2層膜では、ガラス基板上の直
接形成膜(平均結晶粒径3μm)に見られる結晶粒界が
微細化のため、明確には観察されない。
FIG. 1 shows a second embodiment using a scanning electron microscope.
2 is a photograph of a cross section of the a layer during crystallization. 0.5 μ from the interface (region A) of the crystallized b layer (average crystal grain size 2 μm)
It can be seen that fine crystal grains (area B) of m or less are preferentially generated. Here, the region C is an amorphous region. FIG. 2 shows transmission optical micrographs of a) the two-layer film of Example 2 and b) the b-layer single-layer film of Example 2 directly formed on the glass substrate. In the two-layer film of Example 2, the crystal grain boundaries found in the directly formed film (average crystal grain size 3 μm) on the glass substrate are not clearly observed due to the miniaturization.

【0027】このような実施例3の2層膜とガラス基板
上に直接形成した同膜厚の実施例3のa層単層膜につい
て、100Oeの外部磁界を印加しながら波長633n
mのHe−Neレーザーによりビットを書き込み、その
形状を調べた。ガラス基板上の直接形成膜では結晶粒界
に沿った乱れたビット形状を示すが、実施例3の2層膜
では極めて形状の良好な円形のビットが書き込み可能で
あり、光磁気記録媒体として有望であることがわかっ
た。
With respect to the two-layer film of Example 3 and the a-layer single-layer film of Example 3 having the same film thickness formed directly on the glass substrate, a wavelength of 633n was applied while applying an external magnetic field of 100 Oe.
Bits were written by a He-Ne laser of m and the shape thereof was examined. The directly formed film on the glass substrate shows a disordered bit shape along the crystal grain boundaries, but the two-layer film of Example 3 can write a circular bit having an extremely good shape, and is promising as a magneto-optical recording medium. I found out.

【0028】[0028]

【発明の効果】以上、実施例において説明したようにB
x 3-X Y Fe3-Y 12(ここで、0≦X≦3、0
≦Y≦5、Rはイットリウムを含む1種類以上の希土類
元素、NはGa、AlあるいはInを表す)の組成で代
表される多結晶ガーネットにおいて、隣接する結晶化後
のガーネット層間の格子定数が±0.3%以上異なるガ
ーネット層を積層し、ガーネット層とガーネット層ある
いは結晶化後ガーネット構造を有する非晶質層の界面を
形成して、成膜中に基板温度を上げて結晶化するか、あ
るいは成膜後に熱処理によって結晶化することで、その
界面より結晶化過程において1つの層の結晶粒径よりも
小さくかつ平均結晶粒径が1μm以下の微細結晶粒を発
生させることに成功した。本発明による安価な基板上に
形成した微細結晶粒径ガーネット多結晶膜は光磁気記録
媒体や磁気光学効果増強層として有望である。
As described above in the embodiments, B
i x R 3-X N Y Fe 3-Y O 12 (where 0 ≦ X ≦ 3, 0
≦ Y ≦ 5, R is one or more kinds of rare earth elements including yttrium, and N is Ga, Al or In), and the lattice constant between adjacent crystallization garnet layers is Whether garnet layers that differ by ± 0.3% or more are laminated to form an interface between the garnet layer and the garnet layer or an amorphous layer having a garnet structure after crystallization and the substrate temperature is raised during film formation to crystallize Alternatively, by crystallizing by heat treatment after film formation, in the crystallization process from the interface, fine crystal grains smaller than the crystal grain size of one layer and having an average crystal grain size of 1 μm or less were successfully generated. The fine crystal grain size garnet polycrystalline film formed on an inexpensive substrate according to the present invention is promising as a magneto-optical recording medium or a magneto-optical effect enhancing layer.

【図面の簡単な説明】[Brief description of drawings]

【図1】走査型電子顕微鏡によるBi0.3 Tb2.7 Ga
0.3 Fe4.7 12層上に形成したBi2 Dy1 Ga1
4 12層の微細結晶構造を示す15000倍の断面写
真である。
FIG. 1 Bi 0.3 Tb 2.7 Ga by scanning electron microscope
Bi 2 Dy 1 Ga 1 F formed on 0.3 Fe 4.7 O 12 layer
It is a 15,000 times cross-sectional photograph showing the fine crystal structure of the e 4 O 12 layer.

【図2】a)ガラス基板上のBi0.3 Tb2.7 Ga0.3
Fe4.7 12層上に形成したBi2 Dy1 Ga1 Fe4
12層と、b)ガラス基板上に直接形成した同じ厚みの
Bi2 Dy1 Ga1 Fe4 12膜の微細結晶構造を示す
1000倍の透過光学顕微鏡写真である。
FIG. 2 a) Bi 0.3 Tb 2.7 Ga 0.3 on a glass substrate
Bi 2 Dy 1 Ga 1 Fe 4 formed on the Fe 4.7 O 12 layer
3 is a transmission optical microscope photograph at 1000 times showing a fine crystal structure of an O 12 layer and b) a Bi 2 Dy 1 Ga 1 Fe 4 O 12 film having the same thickness formed directly on a glass substrate.

【手続補正書】[Procedure amendment]

【提出日】平成4年1月14日[Submission date] January 14, 1992

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項1[Name of item to be corrected] Claim 1

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0005[Correction target item name] 0005

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0005】ガラス基板等の上に高性能多結晶ガーネッ
ト膜を形成するためには結晶粒微細化が結晶粒界起因の
光学的不均一の低減に有効である(例えば、M.Abe
and M.Gomi;J.Magn.Magn.M
ater.、84、222(1990))。結晶粒微細
化の方法としては添加元素(例えば、伊藤ら;第12回
応用磁気学会学術講演会概要集、127(1988))
あるいは急速(熱処理)結晶化法(T.Suzuki
et al;第13回応用磁気学会学術講演会概要集、
49(1989))がある。
In order to form a high-performance polycrystalline garnet film on a glass substrate or the like, grain refinement is effective in reducing optical nonuniformity due to grain boundaries (eg, M. Abe).
and M.D. Gomi; J. Magn. Magn. M
ater. , 84, 222 (1990)). Additive elements (for example, Ito et al .; Proc. 12th Annual Meeting of the Applied Magnetics Society of Japan, 127 ( 1988 ))
Alternatively, a rapid (heat treatment) crystallization method (T. Suzuki
et al; Proceedings of the 13th Applied Magnetics Society Academic Conference,
49 ( 1989 )).

【手続補正3】[Procedure 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0010】本発明では、Bix 3-X Y Fe 5-Y
12(ここで、0≦X≦3、0≦Y≦5、Rはイットリウ
ムを含む1種類以上の希土類元素、はGa、Alある
いはInを表す)の組成で代表される多結晶ガーネット
を対象とする。1つの層のガーネット結晶粒径がもう1
つの層のガーネット結晶粒径よりも小さくかつ1μm以
下の結晶粒径である多結晶ガーネットを実現するため
に、隣接するガーネット層間の結晶格子定数は±0.3
%以上、好ましくは±0.5%以上異なることが特徴で
ある。結晶化過程において、ガーネット層とガーネット
層あるいは結晶化後ガーネット構造を有する非晶質層の
界面からの微細結晶粒の発生を利用して結晶粒を微細化
する。また、1kOe以上の保磁力を調整するために
は、酸素を除いた残余の原子量比で5at%以下のCu
を添加する。3層以上の多層膜においても、少なくとも
1組以上の2層について、本発明を応用すれば多重記録
光磁気記録媒体として使用できる。このような微細結晶
ガーネット2層膜の上には、非晶質遷移金属希土類合金
やPtあるいはPdとCoの多層膜を積層することが可
能であり、磁気光学効果増強膜としても応用できる。
[0010] In the present invention, Bi x R 3-X M Y Fe 5-Y O
12 Polycrystalline garnet represented by the composition (where 0 ≦ X ≦ 3, 0 ≦ Y ≦ 5, R is one or more kinds of rare earth elements including yttrium, and M is Ga, Al or In). And Garnet grain size of one layer is another
In order to realize a polycrystalline garnet having a crystal grain size smaller than the garnet grain size of one layer and 1 μm or less, the crystal lattice constant between adjacent garnet layers is ± 0.3.
It is characterized by a difference of not less than%, preferably ± 0.5%. In the crystallization process, the generation of fine crystal grains from the interface between the garnet layer and the garnet layer or the amorphous layer having a garnet structure after crystallization is used to refine the crystal grains. Further, in order to adjust the coercive force of 1 kOe or more, the residual atomic weight ratio excluding oxygen is 5 at% or less of Cu.
Is added. Even in a multilayer film of three or more layers, at least one set of two layers can be used as a multiple recording magneto-optical recording medium by applying the present invention. An amorphous transition metal rare earth alloy or a Pt or Pd / Co multilayer film can be laminated on such a fine crystal garnet two-layer film, and can also be applied as a magneto-optical effect enhancing film.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0015[Correction target item name] 0015

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0015】結晶格子定数が±0.3%以上異なるガー
ネットの組合せとしては、Bix 3-X Y Fe 5-Y
12(ここで、0≦X≦3、0≦Y≦5、Rはイットリウ
ムを含む1種類以上の希土類元素、はGa、Alある
いはInを表す)の組成で代表される多結晶ガーネット
が、光磁気記録媒体用として最も有望である。イオン半
径が大きいBiなどで希土類サイトを置換すると結晶格
子定数はXの増加と共に大きくなる。Feサイトを置換
する元素では、イオン半径の小さなGaやAlなどを用
いると結晶格子定数はYの増加と共に小さくなる。ま
た、結晶化温度もガーネットの種類や組成によって異な
る。従って、結晶格子定数が±0.3%以上異なるガー
ネットの組合せの例には、Gd3 Fe5 12(12.4
7A)/Dy3 Fe5 12(12.41A);格子定数
差0.5%、GGG(12.38A)/Tb3 Fe5
12(12.44A);格子定数差0.5%のような異種
の元素を含む組合せのガーネットの他に、Bi0.5 Dy
2.5 Fe5 12(12.44A)/Bi2 Dy1 Fe5
12(12.51A);格子定数差0.6%やY3 Al
1 Fe4 12(12.31A)/Y3 Al4 Fe1 12
(12.09A);格子定数差1.8%などの同種類の
元素から成るがその組成の異なるガーネットの組合せも
ある。ここでかっこ内の数字は結晶格子定数を表す。
Gar having different crystal lattice constants of ± 0.3% or more
As a combination of nets, BixR 3-X M YFe 5-Y O
12(Where 0 ≦ X ≦ 3, 0 ≦ Y ≦ 5, R is yttria
One or more rare earth elements, includingMIs Ga, Al
(Representing In), a polycrystalline garnet represented by the composition
However, it is the most promising for magneto-optical recording media. AEON half
If the rare earth site is replaced with Bi, etc., which has a large diameter, it will be crystalline
The child constant increases as X increases. Replace Fe site
For the element to be used, Ga or Al with a small ionic radius is used.
The crystal lattice constant decreases as Y increases. Well
Also, the crystallization temperature varies depending on the type and composition of garnet.
It Therefore, the crystal lattice constants differing by ± 0.3% or more
An example of a net combination is Gd3FeFiveO12(12.4
7A) / Dy3FeFiveO12(12.41A); lattice constant
0.5% difference, GGG (12.38A) / Tb3FeFiveO
12(12.44A); Different types with a lattice constant difference of 0.5%
In addition to the combination of garnet containing the elements of0.5Dy
2.5FeFiveO12(12.44A) / Bi2Dy1FeFive
O12(12.51A); lattice constant difference of 0.6% or Y3Al
1FeFourO12(12.31A) / Y3AlFourFe1O12
(12.09A); Lattice constant difference of 1.8%
A combination of garnets that consist of elements but have different compositions
is there. Here, the number in parentheses represents the crystal lattice constant.

【手続補正5】[Procedure Amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0028[Correction target item name] 0028

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0028】[0028]

【発明の効果】以上、実施例において説明したようにB
x 3-X Y Fe 5-Y 12(ここで、0≦X≦3、0
≦Y≦5、Rはイットリウムを含む1種類以上の希土類
元素、はGa、AlあるいはInを表す)の組成で代
表される多結晶ガーネットにおいて、隣接する結晶化後
のガーネット層間の格子定数が±0.3%以上異なるガ
ーネット層を積層し、ガーネット層とガーネット層ある
いは結晶化後ガーネット構造を有する非晶質層の界面を
形成して、成膜中に基板温度を上げて結晶化するか、あ
るいは成膜後に熱処理によって結晶化することで、その
界面より結晶化過程において1つの層の結晶粒径よりも
小さくかつ平均結晶粒径が1μm以下の微細結晶粒を発
生させることに成功した。本発明による安価な基板上に
形成した微細結晶粒径ガーネット多結晶膜は光磁気記録
媒体や磁気光学効果増強層として有望である。
As described above in the embodiments, B
i x R 3-X M Y Fe 5-Y O 12 (where 0 ≦ X ≦ 3, 0
≦ Y ≦ 5, R is one or more kinds of rare earth elements including yttrium, and M is Ga, Al, or In, and the polycrystalline garnet represented by the composition has a lattice constant between adjacent garnet layers after crystallization. Whether garnet layers that differ by ± 0.3% or more are laminated to form an interface between the garnet layer and the garnet layer or an amorphous layer having a garnet structure after crystallization and the substrate temperature is raised during film formation to crystallize Alternatively, by crystallizing by heat treatment after film formation, in the crystallization process from the interface, fine crystal grains smaller than the crystal grain size of one layer and having an average crystal grain size of 1 μm or less were successfully generated. The fine crystal grain size garnet polycrystalline film formed on an inexpensive substrate according to the present invention is promising as a magneto-optical recording medium or a magneto-optical effect enhancing layer.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 Bix 3-X Y Fe3-Y 12(ここ
で、0≦X≦3、0≦Y≦5、Rはイットリウムを含む
1種類以上の希土類元素、NはGa、AlあるいはIn
を表す)の組成で代表される多結晶ガーネットにあっ
て、結晶格子定数が±0.3%以上異なる2層から成
り、1つの層の平均結晶粒径がもう1つの層のそれより
も小さくかつ1μm以下であることを特徴とする光磁気
記録媒体用ガーネット多結晶膜。
1. A Bi x R 3-X N Y Fe 3-Y O 12 ( where, 0 ≦ X ≦ 3,0 ≦ Y ≦ 5, R is one or more rare earth elements including yttrium, N is the Ga , Al or In
, Which is composed of two layers having different crystal lattice constants of ± 0.3% or more, and the average crystal grain size of one layer is smaller than that of the other layer. And a garnet polycrystalline film for a magneto-optical recording medium, which is 1 μm or less.
【請求項2】 請求項1におけるガーネットの2層のう
ち、少なくとも1層に、該ガーネットの酸素を除いた残
余の原子量比で5at%以下のCuを添加し、その層の
保磁力が1kOe以上であることを特徴とする光磁気記
録媒体用ガーネット多結晶膜。
2. The garnet according to claim 1, wherein at least one of the two layers of garnet is added with Cu of 5 at% or less in terms of a residual atomic weight ratio excluding oxygen of the garnet, and the coercive force of the layer is 1 kOe or more. A garnet polycrystalline film for a magneto-optical recording medium, characterized in that
【請求項3】 3層以上、ガーネットを積層した光磁気
記録媒体用ガーネット多結晶膜において少なくとも2層
が請求項1記載の2層膜であることを特徴とする光磁気
記録媒体用ガーネット多結晶膜。
3. A garnet polycrystal for a magneto-optical recording medium, wherein at least two layers in the garnet polycrystal film for a magneto-optical recording medium, in which three or more layers of garnet are laminated, are two-layer films according to claim 1. film.
【請求項4】 3層以上、ガーネットを積層した光磁気
記録媒体用ガーネット多結晶膜において少なくとも2層
が請求項2記載の2層膜であることを特徴とする光磁気
記録媒体用ガーネット多結晶膜。
4. A garnet polycrystal for a magneto-optical recording medium, wherein at least two layers in the garnet polycrystal film for a magneto-optical recording medium in which three or more layers of garnet are laminated are at least two layers. film.
【請求項5】 請求項1におけるガーネット2層膜にさ
らに非晶質希土類遷移金属合金、またはPtあるいはP
dとCoの多層膜を積層したことを特徴とする光磁気記
録用媒体または光磁気記録ディスク。
5. The amorphous rare earth-transition metal alloy, Pt or P is added to the garnet two-layer film according to claim 1.
A magneto-optical recording medium or a magneto-optical recording disk, wherein a multilayer film of d and Co is laminated.
【請求項6】 請求項1、2、3、4記載のガーネット
多結晶膜を使用することを特徴とする光磁気記録ディス
ク。
6. A magneto-optical recording disk comprising the garnet polycrystalline film according to any one of claims 1, 2, 3, and 4.
JP03299284A 1990-11-14 1991-11-14 Garnet polycrystalline film for magneto-optical recording medium, magneto-optical recording medium, and magneto-optical recording disk Expired - Fee Related JP3084580B2 (en)

Priority Applications (1)

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JP03299284A JP3084580B2 (en) 1990-11-14 1991-11-14 Garnet polycrystalline film for magneto-optical recording medium, magneto-optical recording medium, and magneto-optical recording disk

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30760090 1990-11-14
JP2-307600 1990-11-14
JP03299284A JP3084580B2 (en) 1990-11-14 1991-11-14 Garnet polycrystalline film for magneto-optical recording medium, magneto-optical recording medium, and magneto-optical recording disk

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JPH05101935A true JPH05101935A (en) 1993-04-23
JP3084580B2 JP3084580B2 (en) 2000-09-04

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5702793A (en) * 1993-02-25 1997-12-30 Nippon Steel Corporation Magneto-optical recording medium, disk and method of manufacturing the same
KR100834428B1 (en) * 2004-08-31 2008-06-04 가부시키가이샤 리코 Sputtering target and the production method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5702793A (en) * 1993-02-25 1997-12-30 Nippon Steel Corporation Magneto-optical recording medium, disk and method of manufacturing the same
KR100834428B1 (en) * 2004-08-31 2008-06-04 가부시키가이샤 리코 Sputtering target and the production method thereof

Also Published As

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