JPH0497524A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0497524A JPH0497524A JP21608690A JP21608690A JPH0497524A JP H0497524 A JPH0497524 A JP H0497524A JP 21608690 A JP21608690 A JP 21608690A JP 21608690 A JP21608690 A JP 21608690A JP H0497524 A JPH0497524 A JP H0497524A
- Authority
- JP
- Japan
- Prior art keywords
- rear surface
- photoresist
- tape
- grinding
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000227 grinding Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に素子が形成
された半導体基板の裏面研削方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for grinding the back surface of a semiconductor substrate on which elements are formed.
従来、半導体装置の製造方法において、素子形成後の半
導体基板の上にレジストを塗布して裏面研削を行なう工
程があるが、研削時に半導体基板の割れが多発する場合
がある。この割れを防止する為、半導体基板表面に裏面
研削用テープをはりつける方法が提案され実施されてい
る。以下、第２図及び第３図を用いて更に説明する。Conventionally, in a method of manufacturing a semiconductor device, there is a step of applying a resist on a semiconductor substrate after forming elements and performing backside grinding, but the semiconductor substrate may frequently crack during grinding. In order to prevent this cracking, a method has been proposed and implemented in which a back grinding tape is attached to the surface of the semiconductor substrate. Further explanation will be given below with reference to FIGS. 2 and 3.
まず第３図（ａ）に示すように、シリコン基板１の上に
、アルミニウムからなるポンディングパッド２を０．５
〜１．７μｍの厚さに形成する。First, as shown in FIG. 3(a), a bonding pad 2 made of aluminum is placed on a silicon substrate 1 with a thickness of 0.5 mm.
It is formed to a thickness of ~1.7 μm.
次で全面に厚さ０．２〜１．０μｍの窒化膜３を形成し
たのち、その上にパッシベーション膜として有機Ｍ４を
厚さ１．０〜５．０μｍ程度に形成する。ホンディング
パッド部の開口方法は、はじめにフォトレジストを用い
たパターン形成により有機膜４をウェットエツチングで
開口させ、次に窒化膜３をドライエツチングして開口し
、ポンディングパッド２を露出させる。このドライエツ
チングの際、有機膜４と窒化膜３の接する点からもエツ
チングが進行し、ポンディングパッド２と窒化膜３と有
機膜４との間にアンダーカット部１１が形成される。Next, a nitride film 3 with a thickness of 0.2 to 1.0 μm is formed over the entire surface, and then an organic M4 film is formed thereon to a thickness of about 1.0 to 5.0 μm as a passivation film. The method for opening the bonding pad section is as follows: First, the organic film 4 is opened by wet etching by patterning using a photoresist, and then the nitride film 3 is opened by dry etching to expose the bonding pad 2. During this dry etching, etching also proceeds from the point where the organic film 4 and the nitride film 3 are in contact, and an undercut portion 11 is formed between the bonding pad 2, the nitride film 3, and the organic film 4.
このように構成された半導体素子を有する半導体基板表
面に、第２図に示す基材フィルム８と糊９からなる裏面
研削用テープをセパレータ１０からはがしてはりつけ、
裏面研削を行なうと、アンダーカット部１１に糊９が入
り込んでしまい、裏面研削後テープを剥ぎ取った後も第
３図（ｂ）の様に糊９がポンディングパッド２上に残る
という不都合があった。A back grinding tape made of a base film 8 and glue 9 shown in FIG. 2 is peeled off from the separator 10 and pasted onto the surface of the semiconductor substrate having the semiconductor element configured in this way.
When back grinding is performed, the glue 9 gets into the undercut portion 11, and even after the tape is peeled off after back grinding, the glue 9 remains on the bonding pad 2, as shown in FIG. 3(b). there were.
上述した従来の半導体装置の製造方法では、裏面研削後
に糊残りが発生し、ポンディングパッドに接続されるワ
イヤの接着強度が低下し、半導体装置の信頼性を低下さ
せるという欠点がある。基材フィルム９糊及びセパレー
タの材質、厚さ、硬さ、粘着力、糊付の混合比等の変更
によっても糊残りを防止することは困難であった。The above-described conventional semiconductor device manufacturing method has the drawback that adhesive residue is generated after backside grinding, reducing the adhesive strength of the wire connected to the bonding pad, and reducing the reliability of the semiconductor device. It was difficult to prevent adhesive residue even by changing the material, thickness, hardness, adhesive strength, mixing ratio of adhesive, etc. of the base film 9 adhesive and separator.
本発明の半導体装置の製造方法は、素子が形成された半
導体基板の表面にフォトレジストを塗布し、その上に裏
面研削用テープを貼り付けた後半導体基板の裏面研削を
行なうものである。In the method of manufacturing a semiconductor device of the present invention, a photoresist is applied to the surface of a semiconductor substrate on which elements are formed, a backside grinding tape is attached thereon, and then the backside of the semiconductor substrate is ground.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を説明するための半導体チッ
プの断面図である。FIG. 1 is a sectional view of a semiconductor chip for explaining one embodiment of the present invention.
素子が形成されたシリコン基板１の上にアルミニウムか
らなるポンディングパッド２を０．５〜１．７μｍの厚
さに形成し、次で厚さ０．２〜１．０μｍの窒化ＷＡ３
とパッシベーション膜としての厚さ１．Ｏ〜５．０μｍ
程度の有機膜４を形成する。次で、ウェットエツチング
法により、有機膜４を、そしてドライエツチング法によ
り窒化膜３をエツチングしてポンディングパッド２の表
面を露出させる。次でフォトレジスト５をＱ、 ２〜５
，０μｍの厚さに塗布しエツチングにより形成されたア
ンダーカット部を埋め、その上に裏面研削用テープ６を
貼付けたのちシリコン基板１の裏面７を研削する。次に
裏面研削用テープ６を剥き取り、フォトレジスト５を除
去し、水洗を行なう。A bonding pad 2 made of aluminum is formed to a thickness of 0.5 to 1.7 μm on a silicon substrate 1 on which an element is formed, and then a nitrided WA3 pad 3 is formed to a thickness of 0.2 to 1.0 μm.
and the thickness as a passivation film 1. O~5.0μm
The organic film 4 is formed to a certain extent. Next, the organic film 4 is etched by wet etching, and the nitride film 3 is etched by dry etching to expose the surface of the bonding pad 2. Next, apply photoresist 5 to Q, 2 to 5.
, 0 .mu.m thick to fill the undercut formed by etching, and after applying a back grinding tape 6 thereon, the back surface 7 of the silicon substrate 1 is ground. Next, the back surface grinding tape 6 is peeled off, the photoresist 5 is removed, and water washing is performed.
このように本実施例によれば、エツチングにより形成さ
れた有機Ｊｌｌ（４と窒化膜３の接する部分に形成され
るアンダーカット部をフォトレジストで埋めることがで
きるため、裏面研削用テープを貼り付けても、その糊が
残ることはなくなる。As described above, according to this embodiment, since the undercut portion formed at the contact portion of the organic Jll (4) formed by etching and the nitride film 3 can be filled with photoresist, a tape for back grinding is pasted. However, the glue will no longer remain.
以上説明したように本発明は、ポンディングパッドと窒
化膜と有機膜の接点部にエツチングによって出来たアン
ダーカット部をフォトレジストを塗布して埋込んだのち
裏面研削用テープを貼り、半導体基板の裏面研削を行う
ことにより、糊残りを防止できるため、半導体装置の信
頼性を向上させることができるという効果がある。As explained above, in the present invention, a photoresist is applied to embed the undercut portion created by etching at the contact point between the bonding pad, the nitride film, and the organic film, and a back-grinding tape is applied to the semiconductor substrate. By performing backside grinding, it is possible to prevent adhesive residue, which has the effect of improving the reliability of the semiconductor device.
３・・・窒化膜、４・・・有機膜、５・・・フォトレジ
スト、６・・・裏面研削用テープ、７・・・裏面、８・
・・基材フィルム、９・・・糊、１０・・・セパレータ
、１１・・・アンダーカット部。3... Nitride film, 4... Organic film, 5... Photoresist, 6... Tape for back grinding, 7... Back surface, 8...
... Base film, 9... Glue, 10... Separator, 11... Undercut portion.
Claims (1)
を塗布し、その上に裏面研削用テープを貼り付けた後半
導体基板の裏面研削を行なうことを特徴とする半導体装
置の製造方法。1. A method of manufacturing a semiconductor device, which comprises applying a photoresist to the surface of a semiconductor substrate on which elements are formed, pasting a backside grinding tape thereon, and then grinding the backside of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21608690A JPH0497524A (en) | 1990-08-16 | 1990-08-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21608690A JPH0497524A (en) | 1990-08-16 | 1990-08-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0497524A true JPH0497524A (en) | 1992-03-30 |
Family
ID=16683031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21608690A Pending JPH0497524A (en) | 1990-08-16 | 1990-08-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0497524A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159848A (en) * | 2006-12-25 | 2008-07-10 | Denso Corp | Method for manufacturing semiconductor device |
| DE102013021536A1 (en) | 2012-12-19 | 2014-06-26 | Makita Corporation | Motor drive device and electric mower |
-
1990
- 1990-08-16 JP JP21608690A patent/JPH0497524A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159848A (en) * | 2006-12-25 | 2008-07-10 | Denso Corp | Method for manufacturing semiconductor device |
| DE102013021536A1 (en) | 2012-12-19 | 2014-06-26 | Makita Corporation | Motor drive device and electric mower |
| DE102013021536B4 (en) * | 2012-12-19 | 2019-05-23 | Makita Corporation | Motor drive device and electric mower |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3197788B2 (en) | Method for manufacturing semiconductor device | |
| US20030143818A1 (en) | Method of applying a bottom surface protective coating to a wafer, and wafer dicing method | |
| CN108615706A (en) | A kind of wafer singualtion method | |
| JP3064979B2 (en) | Dicing method for semiconductor wafer | |
| JPH0497524A (en) | Manufacture of semiconductor device | |
| JPH08153833A (en) | Manufacturing method of semiconductor device | |
| JP2597396B2 (en) | Method of forming pattern of silicone rubber film | |
| JPH0645436A (en) | Bonding method for semiconductor substrate | |
| JPH11121457A (en) | Manufacture of semiconductor device | |
| US6320269B1 (en) | Method for preparing a semiconductor wafer to receive a protective tape | |
| JP3173464B2 (en) | Method for manufacturing semiconductor device | |
| JPH08279478A (en) | Production of semiconductor chip | |
| JPH04168724A (en) | Manufacture of semiconductor device | |
| JP2001085456A (en) | Method of forming bumps | |
| JP4011178B2 (en) | Semiconductor device manufacturing method, resin substrate and tape used therefor | |
| JP3722809B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH0350734A (en) | Manufacture of integrated circuit | |
| JP3003394B2 (en) | Method of manufacturing bump electrode | |
| JPS59117219A (en) | Manufacture of semiconductor device | |
| JPH10189583A (en) | Semiconductor device | |
| JP3498459B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH0653194A (en) | Semiconductor wafer processing | |
| JPH07245286A (en) | Manufacture of semiconductor element | |
| KR100567072B1 (en) | Method for adhering die | |
| JP2008108773A (en) | Method of manufacturing semiconductor chip |