JPH0480878B2 - - Google Patents

Info

Publication number

JPH0480878B2

JPH0480878B2 JP59095389A JP9538984A JPH0480878B2 JP H0480878 B2 JPH0480878 B2 JP H0480878B2 JP 59095389 A JP59095389 A JP 59095389A JP 9538984 A JP9538984 A JP 9538984A JP H0480878 B2 JPH0480878 B2 JP H0480878B2

Authority

JP

Japan

Prior art keywords

annealing

substrate

compound semiconductor

implanted

present

Prior art date

1984-05-11

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

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• 238000000137 annealing Methods 0.000 claims description 26
• 239000000758 substrate Substances 0.000 claims description 26
• 150000001875 compounds Chemical class 0.000 claims description 16
• 238000000034 method Methods 0.000 claims description 16
• 239000004065 semiconductor Substances 0.000 claims description 16
• 238000010438 heat treatment Methods 0.000 claims description 12
• 150000002484 inorganic compounds Chemical class 0.000 claims description 4
• 229910010272 inorganic material Inorganic materials 0.000 claims description 4
• 150000002500 ions Chemical class 0.000 claims description 3
• 239000000463 material Substances 0.000 claims description 3
• 230000001678 irradiating effect Effects 0.000 claims 1
• 238000001228 spectrum Methods 0.000 claims 1
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
• 238000007796 conventional method Methods 0.000 description 5
• 230000008020 evaporation Effects 0.000 description 5
• 238000001704 evaporation Methods 0.000 description 5
• 239000007789 gas Substances 0.000 description 5
• 230000001681 protective effect Effects 0.000 description 5
• 239000010453 quartz Substances 0.000 description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
• 238000009792 diffusion process Methods 0.000 description 4
• 230000004913 activation Effects 0.000 description 3
• 239000013078 crystal Substances 0.000 description 3
• 238000004519 manufacturing process Methods 0.000 description 3
• 229910004298 SiO 2 Inorganic materials 0.000 description 2
• 229910052799 carbon Inorganic materials 0.000 description 2
• 229910002804 graphite Inorganic materials 0.000 description 2
• 239000010439 graphite Substances 0.000 description 2
• 239000012535 impurity Substances 0.000 description 2
• 239000011261 inert gas Substances 0.000 description 2
• 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
• 238000005979 thermal decomposition reaction Methods 0.000 description 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
• 238000006243 chemical reaction Methods 0.000 description 1
• 238000005336 cracking Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• 238000005259 measurement Methods 0.000 description 1
• VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
• 231100000331 toxic Toxicity 0.000 description 1
• 230000002588 toxic effect Effects 0.000 description 1
• 238000002834 transmittance Methods 0.000 description 1