JPH0474867A - Production of thin aluminum nitride film - Google Patents
Production of thin aluminum nitride filmInfo
- Publication number
- JPH0474867A JPH0474867A JP2189062A JP18906290A JPH0474867A JP H0474867 A JPH0474867 A JP H0474867A JP 2189062 A JP2189062 A JP 2189062A JP 18906290 A JP18906290 A JP 18906290A JP H0474867 A JPH0474867 A JP H0474867A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- aluminum nitride
- nitride thin
- energy level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002994 raw material Substances 0.000 claims abstract description 21
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000003973 alkyl amines Chemical class 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 125000005234 alkyl aluminium group Chemical group 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 claims description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 5
- 125000000217 alkyl group Chemical group 0.000 abstract description 2
- 125000003282 alkyl amino group Chemical group 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 125000002524 organometallic group Chemical group 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- MAUMSNABMVEOGP-UHFFFAOYSA-N (methyl-$l^{2}-azanyl)methane Chemical compound C[N]C MAUMSNABMVEOGP-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、低温で高品質の窒化アルミニウム薄膜を製造
する窒化アルミニウム薄膜の製造方法に関す４
従来の技術
窒化アルミニウム（ＡＩＮ）ＣＬ 圧電性を有する絶
縁性の物質であり、ＳＡＷデバイス等への応用が考えら
れる。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing an aluminum nitride thin film for producing high-quality aluminum nitride thin films at low temperatures. It is a chemical substance, and its application to SAW devices etc. can be considered.
従！ ＡＩＮ薄膜の製造法として有機金属気相成長（
ＭＯＣＶＤ）法が知られていも これはトリメチルアル
ミニウム（Ａ Ｉ （ＣＨ３） ３）とアンモニア（
ＮＨｓ ）を加熱した基板（通家 サファイア（α−Ａ
ｌｅ’ｓ））表面上で分脈 反応させ、ＡＩＮ薄膜を製
造しようとするものである。Follow! Metal-organic vapor phase epitaxy (
Although the MOCVD (MOCVD) method is known, it uses trimethylaluminum (A I (CH3) 3) and ammonia (
NHs) heated substrate (Tsuke sapphire (α-A
The aim is to produce an AIN thin film by conducting a reaction on the surface.
発明が解決しようとする課題
このような従来の窒化アルミニウム薄膜の製造方法で＋
１ＮＨ３の分解には高温を要するた敦基板温度を１００
０℃以上にする必要があり、均一で平坦性のよいＡＩＮ
薄膜を形成できず、デバイスへの応用が困難であった
本発明は上記課題を解決するもので、ＳＡＷデバイスな
どへの応用に有効な均一でかつ平坦性のよい窒化アルミ
ニウム薄膜を提供することを目的としていも
課題を解決するための手段
本発明は上記目的を達成するために 窒化アルミニウム
薄膜の構成元素を含む原料気体分子を窒化アルミニウム
薄膜を格子定数の近い基板表面に供給しつ２ 光をその
基板表面に照射して窒化アルミニウム薄膜を製造する方
法において、前記光の波長が前記窒化アルミニウム薄膜
の禁制帯幅に相当する波長よりも短い波長を含むものを
用いるとともに 原料気体分子の吸着状態における酸化
エネルギー準位および還元エネルギー準位が窒化アルミ
ニウム薄膜の表面における伝導帯エネルギー単位と価電
子帯エネルギー準位の間にある原料気体分子を用いる構
成よりなるものである。Problems to be solved by the invention:
The decomposition of 1NH3 required a high temperature, so Atsushi set the substrate temperature to 100%.
The temperature must be above 0℃, and the AIN must be uniform and flat.
The present invention solves the above-mentioned problems, and aims to provide a uniform and flat aluminum nitride thin film that is effective for application to SAW devices and the like. In order to achieve the above object, the present invention supplies raw material gas molecules containing the constituent elements of an aluminum nitride thin film to the surface of a substrate whose lattice constant is similar to that of the aluminum nitride thin film, and 2. In the method of manufacturing an aluminum nitride thin film by irradiating the substrate surface with light, the wavelength of the light is shorter than the wavelength corresponding to the forbidden band width of the aluminum nitride thin film, and oxidation is performed in the adsorbed state of raw material gas molecules. The structure uses source gas molecules whose energy level and reduction energy level are between the conduction band energy unit and the valence band energy level on the surface of the aluminum nitride thin film.
作用
基板に吸着状態の還元エネルギー準位と酸化エネルギー
準位とが、窒化アルミニウム（以後ＡＩＮと略す）の表
面における伝導帯エネルギー準位と価電子帯エネルギー
準位との間にある分子を原料として用ｔ、ｋ さらに
ＡＩＮの禁制帯幅に相当する波長よりも短い波長を含む
光を基板に照射することによって、ＡＩＮ中で光励起さ
れた電子と正孔とを生じさせ、電子が吸着状態にあるア
ルミニウム原料を還元し 正孔が吸着状態にある窒素原
料を酸化して、 この両者により分解及び反応を促逸す
も
実施例
本発明のＡＩＮ薄膜のアルミニウム原料としてトリメチ
ルアルミニウム（Ａ Ｉ （ＣＨｓ） ８）、窒素原
料としてジメチルアミン（（ＣＨｓ）２ＮＨ）を例にと
り、詳細に説明すも
Ａ Ｉ （ＣＨｓ） ｓ及び（ＣＨＩ）！ＮＨＧ＆
それぞれ吸着状態における還元エネルギー準位及び酸
化エネルギー準位が、、ＡＩＮの表面における伝導帯エ
ネルギー単位と価電子帯エネルギー準位との間にあム
さらにＡＩＮの禁制帯幅に相当する波長よりも短い波長
を含む光を基板に照射する光として用いることによって
、ＡＩＮ中に光励起された電子と正孔とを生じさせ、こ
の電子が吸着状態のアルミニウム原料であるＡ Ｉ
（ＣＨ，） ＊を還元し また正孔が吸着状態の窒素原
料である（ＣＨｓ） ２Ｎ Ｈを酸化して、分解及び反
応を促進するという作用に基づくものであム
すなわち第３図に示したよう番へ 吸着したＡｌ（Ｃ
Ｈｓ）ｓ分子の還元エネルギー準位１７及び吸着した（
ＣＨｓ）ｐＮＨ分子の酸化エネルギー準位２０力＜、Ａ
ＩＮ表面における伝導帯エネルギー準位１８と価電子帯
エネルギー準位１９との間にあるた数 光照射によって
ＡＩＮ表面に励起された電子１５は容易に吸着分子に移
動して分解（即ち還元）を促進する。−力先励起された
正孔１６も同様に容易に吸着（ＣＨｓ） ２ＮＨ分子に
移動して分解（即ち酸化）を促進する。Using molecules whose reduction energy level and oxidation energy level adsorbed on the working substrate are between the conduction band energy level and valence band energy level on the surface of aluminum nitride (hereinafter abbreviated as AIN) as raw materials. Furthermore, by irradiating the substrate with light containing a wavelength shorter than the wavelength corresponding to the forbidden band width of AIN, photoexcited electrons and holes are generated in AIN, and the electrons are in an adsorbed state. Trimethylaluminum (A I (CHs) 8) was used as the aluminum raw material for the AIN thin film of the present invention by reducing the aluminum raw material and oxidizing the nitrogen raw material in which holes are adsorbed. , using dimethylamine ((CHs)2NH) as an example of nitrogen raw material, A I (CHs) s and (CHI)! NHG&
The reduction energy level and oxidation energy level in the adsorbed state are between the conduction band energy unit and the valence band energy level at the surface of AIN, respectively, and are shorter than the wavelength corresponding to the forbidden band width of AIN. By using light containing wavelengths as light to irradiate the substrate, photoexcited electrons and holes are generated in AIN, and these electrons are absorbed into the adsorbed aluminum raw material AI.
This is based on the action of reducing (CH,) * and oxidizing (CHs) 2N H, which is a nitrogen source in an adsorbed state, to promote decomposition and reaction, as shown in Figure 3. Next step: Adsorbed Al(C)
Hs) reduction energy level 17 of the s molecule and the adsorbed (
CHs) pNH molecule oxidation energy level 20<,A
The number between the conduction band energy level 18 and the valence band energy level 19 on the IN surface. Electrons 15 excited on the AIN surface by light irradiation easily move to adsorbed molecules and undergo decomposition (i.e. reduction). Facilitate. - The excited holes 16 also easily move to adsorbed (CHs) 2NH molecules to promote decomposition (ie, oxidation).
これらの作用により従来のＭＯＣＶＤ法より低温で、均
一かつ極めて平坦性のよいのＡＩＮ薄膜が製造できる。Due to these effects, a uniform and extremely flat AIN thin film can be produced at a lower temperature than the conventional MOCVD method.
以下、本発明の一実施例について第１図第２図および第
３図を参照して説明する。Hereinafter, one embodiment of the present invention will be described with reference to FIG. 1, FIG. 2, and FIG. 3.
第１図は本発明の製造方法の一実施例で用いられる光Ｃ
ＶＤ装置の構造を示す概略構成図である。Figure 1 shows the light C used in one embodiment of the manufacturing method of the present invention.
1 is a schematic configuration diagram showing the structure of a VD device.
第１図において、 １は真空容器 ２は真空ポンプ、
３はＡＩＮ薄膜と格子定数の近い基板、４は基板ホルタ
′、 ５はヒー久 ６ａはＡＩ（ＣＨａ）３ガ入 ６ｂ
は（ＣＨｓ） ２Ｎ Ｈガ入 ６ｃはＨ２ガ人 ？ａ、
７ｂ、 ７ｃはマスフローコントローラ、８ａ、
８ｂ、 ８ｃはノズノｋ ９はＸｅランプ、 １
０ａ、 １０ｂ、 １０ｃはＸｅランプ光 １１は
コリメー久 １２はハーフミラ−１３はパワーメータ
１４は窓であも
実際の薄膜成長は次のような手順で行なう。In Figure 1, 1 is a vacuum container, 2 is a vacuum pump,
3 is a substrate with a lattice constant similar to that of the AIN thin film, 4 is a substrate holter', 5 is a heater 6a is a 3-gauge AI (CHa) 6b
(CHs) 2N H gas included 6c is H2 gas? a,
7b, 7c are mass flow controllers, 8a,
8b, 8c are nozzle k, 9 is Xe lamp, 1
0a, 10b, 10c are Xe lamp lights 11 is a collimator 12 is a half mirror 13 is a power meter
Although 14 is a window, actual thin film growth is performed in the following procedure.
まず表面を清浄にした基板３を基板ホルダ４に装着すム
この場合基板３は例えばα−ＡｌｚＯｓとすム 次に
真空容器１を真空ポンプ２により高真空に排気す４
次に基板３をヒータ５により結晶成長に適切な温度にす
ム この場合には例えば６５０℃とする。First, the substrate 3 whose surface has been cleaned is mounted on the substrate holder 4. In this case, the substrate 3 is made of α-AlzOs, for example. Next, the vacuum container 1 is evacuated to a high vacuum using the vacuum pump 2. Next, the substrate 3 is placed in a heater. 5, the temperature is set to an appropriate temperature for crystal growth. In this case, the temperature is set to, for example, 650°C.
次にＸｅランプ９を点灯する。Ｘｅランプ光１０ａはコ
リメータ１１により平行光にされ その後、ハーフミラ
−１２により同強度の二つの光ｌＯｂ、１０ｃとなり、
光１０ｂは窓１４を通って基板３に照射される。光１０
ｃの強度をパワーメータ１３により測定することにより
基板３に照射される光１０ｂの強度を知る。光１０ｂの
強度をＸｅランプ９を調節することにより、薄膜成長に
適当な強度にすも この場合例えば５００ｍＷ／Ｃｍ’
とすム
次に窒化アルミニウム薄膜の構成元素を含む原料気体分
子としてＡ Ｉ （ＣＨｓ） ｓガス６ａおよび（Ｃ
Ｈ＝）２ＮＨガス６ｂの流量を、マスフローコントロー
ラ７ａ、７ｂにより適当な流量比になるよう調節し ノ
ズル８ａ、８ｂにより基板３表面に供給すム また 同
時にノズル８ＣよりＨ２ガス６Ｃを真空容器ｌ内に導入
すム この場合の流量は 例えばＡ ｌ （ＣＨａ）
ｓガス６ａが０．５Ｓｃｃｒｒｈ （ＣＨ３）２Ｎ
Ｈガス６ｂが５０ｓｃｃ瓜Ｈ２ガス６ｃが５００ｓｅｃ
ｍとすム
用いたＸｅランプ光の分光分布図は第２図に示すとおり
であり、ＡＩＮの禁制帯幅（約３．８ｅＶ）に相当する
波長（約３２６ｎｍ）よりも短い波長の光を含んでいる
た敢 第３図に示すようにＡＩＮ中に吸収された光は電
子１５及び正孔１６を励起し 電子１５は吸着状態にお
ける還元エネルギー準位１７カ＜、ＡＩＮ表面における
伝導帯エネルギー準位１８と価電子帯エネルギー準位１
９との間にあるＡＩ （ＣＨｓ）３ガス６ａ分子を、
また正孔１６は吸着状態における酸化エネルギー準位２
０力＜、ＡＩＮ表面における伝導帯エネルギー準位１８
と価電子帯エネルギー準位１９との間にある（ＣＨ−）
２ＮＨガス６ｂ分子をそれぞれ還元酸化し 分解・反応
を促進すム
以上のような方法で製造したＡＩＮ薄膜（表 従来のＭ
ＯＣＶＤ法に比べて数百℃以上も低い６５０℃という基
板温度で製造できたた数 均一かつ極めて平坦性のよい
単結晶薄膜であっちなお上述の実施例で！；Ｌ Ａ
ｌ （ＣＨｓ） ｓガス６ａおよび（ＣＨｓ）ｅＮＨ
ガス６ｂを同時に基板３表面に供給した力交 これらを
交互に供給し その流量と供給時皿 さらには光１０ａ
の強度等を制御することによりＡ１層とＮ層が１原子層
づつ並んだ原子層成長も可能であっｔう
なお本実施例では 原料気体分子として、アルキルアル
ミニウムであるトリメチルアルミニウム（Ａ Ｉ （
ＣＨａ） ｓ）ガス６ａについて述べたが、アルキルア
ルミニウムとしてはトリメチルアルミニウを用いること
もでき、 また原料気体分子として、アルキルアミンで
あるジメチルアミン（（ＣＨｓ）ｓＮＨ）ガス６ｂにつ
いて述べた力丈 アルキルアミンとしてはメチルアミン
、エチルアミン。Next, the Xe lamp 9 is turned on. The Xe lamp light 10a is made into parallel light by a collimator 11, and then turned into two lights lOb and 10c with the same intensity by a half mirror 12.
The light 10b passes through the window 14 and is irradiated onto the substrate 3. light 10
By measuring the intensity of light 10b with the power meter 13, the intensity of the light 10b irradiated onto the substrate 3 can be determined. By adjusting the intensity of the light 10b using the Xe lamp 9, the intensity can be adjusted to an appropriate intensity for thin film growth. In this case, for example, 500 mW/Cm'
Next, A I (CHs) s gas 6a and (C
The flow rate of the H=)2NH gas 6b is adjusted to an appropriate flow rate ratio using the mass flow controllers 7a and 7b, and the nozzles 8a and 8b supply the H2 gas 6C to the surface of the substrate 3. At the same time, the H2 gas 6C is supplied from the nozzle 8C into the vacuum vessel l. In this case, the flow rate is, for example, A l (CHa)
s gas 6a is 0.5Sccrrh (CH3)2N
H gas 6b is 50scc, H2 gas 6c is 500sec
The spectral distribution diagram of the Xe lamp light using m and Sum is shown in Figure 2, and it does not include light with a wavelength shorter than the wavelength (approximately 326 nm) corresponding to the forbidden band width of AIN (approximately 3.8 eV). As shown in Figure 3, the light absorbed in AIN excites electrons 15 and holes 16, and electrons 15 reach the reduction energy level 17 in the adsorbed state, and the conduction band energy level at the AIN surface. 18 and valence band energy level 1
The AI (CHs)3 gas 6a molecule between 9 and
In addition, the hole 16 has an oxidation energy level of 2 in the adsorbed state.
0 force <, conduction band energy level 18 on the AIN surface
and the valence band energy level 19 (CH-)
The AIN thin film produced by the method described above reduces and oxidizes each 2NH gas 6b molecule to promote decomposition and reaction (see table)
In the above example, we were able to manufacture a single crystal thin film with a uniform and extremely flat surface at a substrate temperature of 650°C, which is several hundred degrees Celsius lower than that of the OCVD method! ;LA
l (CHs)s gas 6a and (CHs)eNH
A force exchange in which gas 6b is simultaneously supplied to the surface of the substrate 3. These are supplied alternately, and the flow rate and supply time are changed to the plate and the light 10a.
By controlling the strength, etc., it is possible to grow atomic layers in which the A1 layer and the N layer are arranged one atomic layer at a time.In addition, in this example, trimethylaluminum (A I
CHa) s) Although gas 6a has been described, trimethylaluminum can also be used as the alkyl aluminum, and as the raw material gas molecule, the alkyl amine dimethylamine ((CHs)sNH) gas 6b, which is an alkyl amine, has been described. Examples include methylamine and ethylamine.
ジエチルアミン、 およびターシャリ−ブチルアミンの
うちの一つを用いることもできも
また上述の実施例では基板としてα−ＡＩ２０ｓを用い
た力丈 窒化アルミニウム薄膜と格子定数の近い基板例
えばＡｌＡｓ、 Ｓｉ、 ５ｉＣＩ、 他の基板
を用いてもよ（ｌ
さらに 光源はＸｅランプに限らず、光の波長がＡＩＮ
の禁制帯幅に相当する波長よりも短い波長を含むもので
あれば同様の効果が得られる。One of diethylamine, and tertiary-butylamine can also be used.Also, in the above example, α-AI20s was used as the substrate.A substrate with a lattice constant similar to that of the aluminum nitride thin film, such as AlAs, Si, 5iCI, etc. (L) Furthermore, the light source is not limited to a Xe lamp, and the wavelength of light is
A similar effect can be obtained if the wavelength includes a wavelength shorter than the wavelength corresponding to the forbidden band width.
また 原料気体分子は上述の例に限らず、吸着状態にお
ける酸化エネルギー準位および還元エネルギー単位力＜
、ＡＩＮ表面における伝導帯エネルギー準位と価電子帯
エネルギー準位との間にある分子であれば同様の効果が
得られる。In addition, the raw material gas molecules are not limited to the above examples, but the oxidation energy level and reduction energy unit power <
, a similar effect can be obtained if the molecule is between the conduction band energy level and the valence band energy level on the AIN surface.
更に上述の実施例では原料気体分子以外にＨ２ガスを導
入した力丈 必ずしも必要ではなし′１ｏシかし この
Ｈ２には分解によって生じたアルキル基等を炭化水素化
することによって膜中に炭素が取り込まれるのを防ぐ等
の効果がある。Furthermore, in the above embodiment, in addition to the raw material gas molecules, H2 gas was introduced. However, this H2 contains carbon in the film by converting alkyl groups generated by decomposition into hydrocarbons. It has the effect of preventing it from being taken in.
また 薄膜製造中の基板温度４１５００℃以上７５０℃
未満が好適であム ５００℃未満では良好な結晶性の膜
が得られず、また７５０℃を超える温度では平坦性が徐
々に悪くなる。Also, the substrate temperature during thin film manufacturing is 41500℃ or higher and 750℃.
If the temperature is less than 500°C, a film with good crystallinity cannot be obtained, and if the temperature exceeds 750°C, the flatness gradually deteriorates.
発明の効果
以上の実施例から明らかなように本発明によれば 光の
波長が窒化アルミニウム薄膜の禁制帯幅に相当する波長
よりも短い波長を含む光を用いるととも番ミ 原料気
体分子の吸着状態における酸化エネルギー準位および還
元エネルギー準位力士 窒化アルミニウム薄膜の表面に
おける伝導帯エネルギー準位と価電子帯エネルギー準位
との間にある原料気体分子を用いる構成によるので、
ＳＡＷデバイスなどへの応用に極めて有用な均一かつ平
坦性のよい窒化アルミニウム薄膜を提供できる。Effects of the Invention As is clear from the above embodiments, according to the present invention, by using light having a wavelength shorter than the wavelength corresponding to the forbidden band width of the aluminum nitride thin film, it is possible to adsorb raw material gas molecules. The oxidation energy level and reduction energy level in the state are based on the configuration using source gas molecules that are between the conduction band energy level and the valence band energy level on the surface of the aluminum nitride thin film.
It is possible to provide a uniform and flat aluminum nitride thin film that is extremely useful for applications such as SAW devices.
第１図は本発明の一実施例の窒化アルミニウム薄膜の製
造方法を実施するために使用する装置の概略構成医 第
２図は本発明による製造方法に用いられるＸｅランプの
分光分布医 第３図はＡＩＮ表面のエネルギー準位と吸
着状態の原料気体分子の酸化または還元エネルギー準位
との関係を示す模式図である。
３・・・窒化アルミニウム薄膜と格子定数の近い基板、
６ａ・ ・Ａｌ （ＣＨｓ）ｓガス（原料気体分子
）、 ６ｂ・・・ （ＣＨａ）２ＮＨガス（原料気体分
子）、 １０ａ、 １０ｂ、 ｌ０ｃ−Ｘｅランプ
光
代理人の氏名 弁理士 粟野重孝 はか１名３ °−瞥
イヒフルミ＝り、ム、傳Ｓ員乙Ｍド子足１ダの近い基板
ｄａ−＾１ （ｔＨｌ）ｚ ｌｙ”ス（ＩＦ ｆ’ｒ気
イ本分ＪθＡｂ −（ｔＨｓ）ｚ ＮＨｚ−ｘ （月
−ｆｔツ”ｔｎ９”；ｂ）ｌθａ、 １０ｂ、 １０６
−Ｘｅランプ光！３ 図
第
図FIG. 1 is a schematic diagram of the equipment used to carry out the method for manufacturing an aluminum nitride thin film according to an embodiment of the present invention. FIG. 2 is a diagram showing the spectral distribution of a Xe lamp used in the manufacturing method according to the present invention. is a schematic diagram showing the relationship between the energy level of the AIN surface and the oxidation or reduction energy level of the raw material gas molecules in the adsorbed state. 3... Substrate with a lattice constant similar to that of the aluminum nitride thin film,
6a... Al (CHs)s gas (raw material gas molecules), 6b... (CHa)2NH gas (raw material gas molecules), 10a, 10b, 10c-Xe lamp light agent's name Patent attorney Shigetaka Awano Haka 1 Name 3 °-view Ihifurumi = ri, mu, Den S member B M de child foot 1 da nearby board da-^1 (tHl) NHz-x (Mon-fttsu"tn9";b) lθa, 10b, 106
-Xe lamp light! 3 Figure Figure
Claims (4)
分子を、その窒化アルミニウム薄膜と格子定数の近い基
板表面に供給しつつ、光を前記基板表面に照射して窒化
アルミニウム薄膜を製造する方法において、前記光の波
長が前記窒化アルミニウム薄膜の禁制帯幅に相当する波
長よりも短い波長を含む光を用いるとともに、前記原料
気体分子の吸着状態における酸化エネルギー準位と還元
エネルギー準位がともに前記窒化アルミニウム薄膜の表
面における伝導帯エネルギー準位と価電子帯エネルギー
準位の間にある原料気体分子を用いることを特徴とする
窒化アルミニウム薄膜の製造方法。(1) In a method of manufacturing an aluminum nitride thin film by supplying raw material gas molecules containing the constituent elements of the aluminum nitride thin film to the substrate surface whose lattice constant is similar to that of the aluminum nitride thin film, and irradiating the substrate surface with light, The wavelength of the light is shorter than the wavelength corresponding to the forbidden band width of the aluminum nitride thin film, and the oxidation energy level and the reduction energy level of the raw material gas molecules in the adsorbed state are both the aluminum nitride thin film. A method for producing an aluminum nitride thin film, characterized by using raw material gas molecules located between the conduction band energy level and the valence band energy level on the surface of the thin film.
ルアミンであることを特徴とする、請求項１記載の窒化
アルミニウム薄膜の製造方法。(2) The method for producing an aluminum nitride thin film according to claim 1, wherein the raw material gas molecules are an alkyl aluminum and an alkyl amine.
ウムまたはトリエチルアルミニウムの何れかを用い、ア
ルキルアミンとしてメチルアミン、ジメチルアミン、エ
チルアミン、ジエチルアミン、ターシャリーブチルアミ
ンのうちの一つを用いることを特徴とする、請求項２記
載の窒化アルミニウム薄膜の製造方法。(3) The aluminum alkyl is either trimethylaluminum or triethylaluminum, and the alkylamine is one of methylamine, dimethylamine, ethylamine, diethylamine, and tert-butylamine. A method for producing an aluminum nitride thin film.
度を、５００℃〜７５０℃の範囲に設定したことを特徴
とする、請求項１記載の窒化アルミニウム薄膜の製造方
法。(4) The method for producing an aluminum nitride thin film according to claim 1, wherein the temperature of the substrate having a lattice constant similar to that of the aluminum nitride thin film is set in a range of 500°C to 750°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189062A JPH0474867A (en) | 1990-07-16 | 1990-07-16 | Production of thin aluminum nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189062A JPH0474867A (en) | 1990-07-16 | 1990-07-16 | Production of thin aluminum nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0474867A true JPH0474867A (en) | 1992-03-10 |
Family
ID=16234659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2189062A Pending JPH0474867A (en) | 1990-07-16 | 1990-07-16 | Production of thin aluminum nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0474867A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08130439A (en) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | High-speed surface acoustic wave element |
| JP2002237737A (en) * | 2000-12-05 | 2002-08-23 | Ngk Insulators Ltd | Substrate for surface acoustic wave device and method for manufacturing the substrate and surface acoustic wave device using the substrate |
| US6742251B1 (en) | 1997-03-18 | 2004-06-01 | Yazaki Corporation | Method of crimping a terminal onto an electrical wire equipped with a water-proof plug using a positioning means |
-
1990
- 1990-07-16 JP JP2189062A patent/JPH0474867A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08130439A (en) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | High-speed surface acoustic wave element |
| US6742251B1 (en) | 1997-03-18 | 2004-06-01 | Yazaki Corporation | Method of crimping a terminal onto an electrical wire equipped with a water-proof plug using a positioning means |
| JP2002237737A (en) * | 2000-12-05 | 2002-08-23 | Ngk Insulators Ltd | Substrate for surface acoustic wave device and method for manufacturing the substrate and surface acoustic wave device using the substrate |
| JP4502553B2 (en) * | 2000-12-05 | 2010-07-14 | 日本碍子株式会社 | Method for manufacturing substrate for surface acoustic wave device |
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