JPH0473301B2 - - Google Patents

Info

Publication number
JPH0473301B2
JPH0473301B2 JP57164666A JP16466682A JPH0473301B2 JP H0473301 B2 JPH0473301 B2 JP H0473301B2 JP 57164666 A JP57164666 A JP 57164666A JP 16466682 A JP16466682 A JP 16466682A JP H0473301 B2 JPH0473301 B2 JP H0473301B2
Authority
JP
Japan
Prior art keywords
region
type
semiconductor substrate
upper gate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57164666A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5952882A (ja
Inventor
Mitsuo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP57164666A priority Critical patent/JPS5952882A/ja
Publication of JPS5952882A publication Critical patent/JPS5952882A/ja
Publication of JPH0473301B2 publication Critical patent/JPH0473301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57164666A 1982-09-20 1982-09-20 接合型電界効果トランジスタ Granted JPS5952882A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57164666A JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164666A JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5952882A JPS5952882A (ja) 1984-03-27
JPH0473301B2 true JPH0473301B2 (cs) 1992-11-20

Family

ID=15797509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57164666A Granted JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5952882A (cs)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248567A (ja) * 1985-04-26 1986-11-05 Matsushita Electronics Corp 接合型電界効果トランジスタ
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
JP3158973B2 (ja) * 1995-07-20 2001-04-23 富士電機株式会社 炭化けい素縦型ｆｅｔ
DE19548443A1 (de) * 1995-12-22 1997-06-26 Siemens Ag Halbleiteranordnung zur Strombegrenzung
DE19726678A1 (de) * 1997-06-24 1999-01-07 Siemens Ag Passiver Halbleiterstrombegrenzer
TW407371B (en) * 1997-04-25 2000-10-01 Siemens Ag Equipment to limited alternative current, especially in short-circuit case
JP4716580B2 (ja) * 2001-01-11 2011-07-06 積水化学工業株式会社 コウモリの侵入防御装置及び建物ユニット

Also Published As

Publication number Publication date
JPS5952882A (ja) 1984-03-27

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