JPH0468280B2 - - Google Patents
Info
- Publication number
- JPH0468280B2 JPH0468280B2 JP61029296A JP2929686A JPH0468280B2 JP H0468280 B2 JPH0468280 B2 JP H0468280B2 JP 61029296 A JP61029296 A JP 61029296A JP 2929686 A JP2929686 A JP 2929686A JP H0468280 B2 JPH0468280 B2 JP H0468280B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- joining
- solids
- bonding
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2929686A JPS62186938A (ja) | 1986-02-13 | 1986-02-13 | 固体の接合方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2929686A JPS62186938A (ja) | 1986-02-13 | 1986-02-13 | 固体の接合方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62186938A JPS62186938A (ja) | 1987-08-15 |
| JPH0468280B2 true JPH0468280B2 (enExample) | 1992-10-30 |
Family
ID=12272277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2929686A Granted JPS62186938A (ja) | 1986-02-13 | 1986-02-13 | 固体の接合方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62186938A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2324405C (en) * | 1998-03-24 | 2009-09-15 | Kia Silverbrook | Method for construction of nanotube matrix material |
| FR2854493B1 (fr) * | 2003-04-29 | 2005-08-19 | Soitec Silicon On Insulator | Traitement par brossage d'une plaquette semiconductrice avant collage |
| JP4616149B2 (ja) * | 2005-10-18 | 2011-01-19 | 本田技研工業株式会社 | 金属部材の固相接合方法 |
| JP5517588B2 (ja) * | 2009-12-11 | 2014-06-11 | 日産自動車株式会社 | 金属部材の接合方法及び金属部材の接合装置並びにこれらを用いた金属接合部材の製造方法 |
| CN111270314A (zh) * | 2020-04-17 | 2020-06-12 | 中国电子科技南湖研究院 | 一种制备大尺寸单晶的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180148A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Manufacture of semiconductor device having dielectric isolation structure |
| JPS5855732A (ja) * | 1981-09-30 | 1983-04-02 | Hitachi Ltd | 静電容量型圧力センサ |
-
1986
- 1986-02-13 JP JP2929686A patent/JPS62186938A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62186938A (ja) | 1987-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2857802B2 (ja) | 2個の物体を一体に連結する方法 | |
| US8778121B2 (en) | Method for laser-assisted bonding, substrates bonded in this manner and use thereof | |
| US8975159B2 (en) | Method for manufacturing bonded wafer | |
| KR102474915B1 (ko) | 동력학적으로 제한된 나노-스케일 확산 접합 구조 및 방법 | |
| KR102599962B1 (ko) | 산화물 단결정 박막을 구비한 복합 웨이퍼의 제조 방법 | |
| US7115481B2 (en) | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate | |
| US8999090B2 (en) | Process for bonding two substrates | |
| KR100741541B1 (ko) | 접합웨이퍼의 제조방법 및 접합웨이퍼 | |
| JP2012004599A (ja) | 電子工学、光学または光電子工学に使用される2つの基板を直接接合する方法 | |
| JPS62185339A (ja) | 半導体デバイスの製造法 | |
| JP2010503239A (ja) | 厚層転写プロセスを用いて太陽電池を製造するための方法および構造 | |
| KR101578964B1 (ko) | Soi 기판의 제작 방법 | |
| KR20080101868A (ko) | Soi 기판의 제조 방법 | |
| JPS641045B2 (enExample) | ||
| JPH0468280B2 (enExample) | ||
| JPS60121715A (ja) | 半導体ウエハの接合方法 | |
| JP2004140266A (ja) | 薄膜層ウェハ製造方法、及び薄膜層ウェハ | |
| EP4661061A1 (en) | Bonding method and soi substrate preparation method | |
| JPS61116820A (ja) | 半導体のアニ−ル方法 | |
| CN1086926A (zh) | 硅片直接键合方法 | |
| JPH08195334A (ja) | シリコン基板の接合方法 | |
| Belford et al. | Surface activation using remote plasma for silicon to quartz wafer bonding | |
| KR102843010B1 (ko) | 두 개의 반도체 기판을 접합하기 위한 방법 | |
| JP4594121B2 (ja) | Soiウエーハの製造方法及びsoiウエーハ | |
| RU2244984C1 (ru) | Способ изготовления гетероструктуры |