JPH0466347B2 - - Google Patents

Info

Publication number
JPH0466347B2
JPH0466347B2 JP21500385A JP21500385A JPH0466347B2 JP H0466347 B2 JPH0466347 B2 JP H0466347B2 JP 21500385 A JP21500385 A JP 21500385A JP 21500385 A JP21500385 A JP 21500385A JP H0466347 B2 JPH0466347 B2 JP H0466347B2
Authority
JP
Japan
Prior art keywords
spot
ion beam
ion
processing
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21500385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6275533A (ja
Inventor
Akira Shimase
Satoshi Haraichi
Hiroshi Yamaguchi
Takeoki Myauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60215003A priority Critical patent/JPS6275533A/ja
Publication of JPS6275533A publication Critical patent/JPS6275533A/ja
Publication of JPH0466347B2 publication Critical patent/JPH0466347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP60215003A 1985-09-30 1985-09-30 イオンビ−ム加工方法および装置 Granted JPS6275533A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60215003A JPS6275533A (ja) 1985-09-30 1985-09-30 イオンビ−ム加工方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60215003A JPS6275533A (ja) 1985-09-30 1985-09-30 イオンビ−ム加工方法および装置

Publications (2)

Publication Number Publication Date
JPS6275533A JPS6275533A (ja) 1987-04-07
JPH0466347B2 true JPH0466347B2 (enrdf_load_stackoverflow) 1992-10-22

Family

ID=16665093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60215003A Granted JPS6275533A (ja) 1985-09-30 1985-09-30 イオンビ−ム加工方法および装置

Country Status (1)

Country Link
JP (1) JPS6275533A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams

Also Published As

Publication number Publication date
JPS6275533A (ja) 1987-04-07

Similar Documents

Publication Publication Date Title
JP2680074B2 (ja) 荷電粒子ビーム露光を用いた半導体装置の製造方法
TW495834B (en) Method of electron-beam exposure and mask and electron-beam exposure system used therein
US4743766A (en) Method of drawing a desired pattern on a target through exposure thereof with an electron beam
EP0298495B1 (en) Method and apparatus for correcting defects of x-ray mask
JPS5856332A (ja) マスクの欠陥修正方法
JP3340248B2 (ja) 電子ビーム露光方法
US4112305A (en) Method of projecting a beam of charged particles
US4710639A (en) Ion beam lithography system
JPS58190028A (ja) 可変ライン走査を用いる荷電粒子ビ−ム露光装置
US6326632B1 (en) Particle-optical imaging system for lithography purposes
US4263514A (en) Electron beam system
JPS59208830A (ja) イオンビ−ム加工方法およびその装置
JPH0466347B2 (enrdf_load_stackoverflow)
JPS60126834A (ja) イオンビーム加工装置
US4158140A (en) Electron beam exposure apparatus
JP3060613B2 (ja) 集束イオンビーム装置、及び集束イオンビームを用いた断面加工方法
JPH1125895A (ja) 電子線装置
JP3247700B2 (ja) 走査形投影電子線描画装置および方法
JP2672808B2 (ja) イオンビーム加工装置
TW514969B (en) Electron beam exposure apparatus and electron beam exposure method
JPS62241248A (ja) 集束イオン線装置
JPH07136781A (ja) 加工位置指定方法
JP3240730B2 (ja) イオンビーム装置、及びイオンビーム装置による加工条件表示方法
JPH07105321B2 (ja) イオンビ−ム加工方法およびその装置
JPH10312954A (ja) 電子ビーム露光装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees