JPH0461491B2 - - Google Patents

Info

Publication number

JPH0461491B2

JPH0461491B2 JP4846386A JP4846386A JPH0461491B2 JP H0461491 B2 JPH0461491 B2 JP H0461491B2 JP 4846386 A JP4846386 A JP 4846386A JP 4846386 A JP4846386 A JP 4846386A JP H0461491 B2 JPH0461491 B2 JP H0461491B2

Authority

JP

Japan

Prior art keywords

semiconductor

single crystal

substrate

film

insulating layer

Prior art date

1986-03-07

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000013078 crystal Substances 0.000 claims description 57
• 239000004065 semiconductor Substances 0.000 claims description 43
• 239000000758 substrate Substances 0.000 claims description 32
• 238000000034 method Methods 0.000 claims description 17
• 238000004519 manufacturing process Methods 0.000 claims description 16
• 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
• 238000001953 recrystallisation Methods 0.000 claims description 5
• 239000000463 material Substances 0.000 claims description 4
• 230000001678 irradiating effect Effects 0.000 claims description 3
• 230000008018 melting Effects 0.000 claims description 3
• 238000002844 melting Methods 0.000 claims description 3
• 230000015572 biosynthetic process Effects 0.000 claims description 2
• 235000012239 silicon dioxide Nutrition 0.000 claims description 2
• 239000000377 silicon dioxide Substances 0.000 claims description 2
• 239000002184 metal Substances 0.000 claims 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
• 239000010410 layer Substances 0.000 description 19
• WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
• 229910052721 tungsten Inorganic materials 0.000 description 19
• 239000010937 tungsten Substances 0.000 description 19
• 238000005229 chemical vapour deposition Methods 0.000 description 4
• 230000007547 defect Effects 0.000 description 4
• 239000012212 insulator Substances 0.000 description 4
• 238000007711 solidification Methods 0.000 description 4
• 230000008023 solidification Effects 0.000 description 4
• 238000010586 diagram Methods 0.000 description 3
• 230000000694 effects Effects 0.000 description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
• 238000009826 distribution Methods 0.000 description 2
• 229910052710 silicon Inorganic materials 0.000 description 2
• 239000010703 silicon Substances 0.000 description 2
• ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
• YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
• 238000002425 crystallisation Methods 0.000 description 1
• 230000008025 crystallization Effects 0.000 description 1
• 239000003989 dielectric material Substances 0.000 description 1
• 238000010894 electron beam technology Methods 0.000 description 1
• 238000000407 epitaxy Methods 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 239000000155 melt Substances 0.000 description 1
• 229910052750 molybdenum Inorganic materials 0.000 description 1
• 239000011733 molybdenum Substances 0.000 description 1
• 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1
• 239000002344 surface layer Substances 0.000 description 1
• WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
• 229910021342 tungsten silicide Inorganic materials 0.000 description 1