JPH046087B2 - - Google Patents

Info

Publication number
JPH046087B2
JPH046087B2 JP58037626A JP3762683A JPH046087B2 JP H046087 B2 JPH046087 B2 JP H046087B2 JP 58037626 A JP58037626 A JP 58037626A JP 3762683 A JP3762683 A JP 3762683A JP H046087 B2 JPH046087 B2 JP H046087B2
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
lithium tantalate
absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58037626A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59163817A (ja
Inventor
Hideki Tsuya
Masakazu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58037626A priority Critical patent/JPS59163817A/ja
Publication of JPS59163817A publication Critical patent/JPS59163817A/ja
Publication of JPH046087B2 publication Critical patent/JPH046087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2923—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H10P14/2925—
    • H10P14/3238—
    • H10P14/3248—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3466—
    • H10P14/3814—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
JP58037626A 1983-03-08 1983-03-08 半導体装置用基板 Granted JPS59163817A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58037626A JPS59163817A (ja) 1983-03-08 1983-03-08 半導体装置用基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58037626A JPS59163817A (ja) 1983-03-08 1983-03-08 半導体装置用基板

Publications (2)

Publication Number Publication Date
JPS59163817A JPS59163817A (ja) 1984-09-14
JPH046087B2 true JPH046087B2 (enExample) 1992-02-04

Family

ID=12502841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58037626A Granted JPS59163817A (ja) 1983-03-08 1983-03-08 半導体装置用基板

Country Status (1)

Country Link
JP (1) JPS59163817A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874486B2 (ja) * 1991-11-29 1999-03-24 ソニー株式会社 ポリッシュ工程を備えたトレンチアイソレーションの形成方法及び半導体装置の製造方法
DE69232648T2 (de) * 1991-11-29 2003-02-06 Sony Corp., Tokio/Tokyo Verfahren zur Herstellung einer Grabenisolation mittels eines Polierschritts und Herstellungsverfahren für eine Halbleitervorrichtung
KR100511903B1 (ko) * 1999-06-29 2005-09-02 주식회사 하이닉스반도체 에스오아이 기판의 제조방법

Also Published As

Publication number Publication date
JPS59163817A (ja) 1984-09-14

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