JPH0456457B2 - - Google Patents

Info

Publication number
JPH0456457B2
JPH0456457B2 JP58172989A JP17298983A JPH0456457B2 JP H0456457 B2 JPH0456457 B2 JP H0456457B2 JP 58172989 A JP58172989 A JP 58172989A JP 17298983 A JP17298983 A JP 17298983A JP H0456457 B2 JPH0456457 B2 JP H0456457B2
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
type region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58172989A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6065543A (ja
Inventor
Katsuyoshi Washio
Yasunobu Tanizaki
Masataka Oota
Makoto Hayashi
Tomoyuki Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP58172989A priority Critical patent/JPS6065543A/ja
Publication of JPS6065543A publication Critical patent/JPS6065543A/ja
Publication of JPH0456457B2 publication Critical patent/JPH0456457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/031—
    • H10W10/30—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58172989A 1983-09-21 1983-09-21 半導体装置の製造方法 Granted JPS6065543A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172989A JPS6065543A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172989A JPS6065543A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6065543A JPS6065543A (ja) 1985-04-15
JPH0456457B2 true JPH0456457B2 (cg-RX-API-DMAC10.html) 1992-09-08

Family

ID=15952110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172989A Granted JPS6065543A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6065543A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS6065543A (ja) 1985-04-15

Similar Documents

Publication Publication Date Title
US5086005A (en) Bipolar transistor and method for manufacturing the same
JPH06318634A (ja) 半導体装置の素子分離方法
JPH0557741B2 (cg-RX-API-DMAC10.html)
JPH0745696A (ja) 半導体装置およびその製造方法
JPS60106142A (ja) 半導体素子の製造方法
JPH10149962A (ja) 半導体基板およびその製造方法
JPH0456457B2 (cg-RX-API-DMAC10.html)
JP3360970B2 (ja) 半導体装置の製造方法
JPH0126184B2 (cg-RX-API-DMAC10.html)
JP2899018B2 (ja) 半導体装置
JP2890550B2 (ja) 半導体装置の製造方法
JPH0366815B2 (cg-RX-API-DMAC10.html)
JP3068733B2 (ja) 半導体装置の製造方法
JP3093615B2 (ja) 半導体装置の製造方法
JP3057692B2 (ja) 半導体装置の製造方法
JPH01137645A (ja) 半導体装置の製造方法
JP3300474B2 (ja) 半導体装置およびその製造方法
JPS6140145B2 (cg-RX-API-DMAC10.html)
JPH06188259A (ja) 半導体装置の製造方法
JPH04242934A (ja) 半導体装置の製造方法
JPS6312380B2 (cg-RX-API-DMAC10.html)
JPH01181465A (ja) 超高速半導体装置の製造方法
JPH04186840A (ja) 半導体集積回路装置の製造方法
JPH02309653A (ja) 半導体集積回路の製造方法
JPS605072B2 (ja) 絶縁ゲ−ト型電界効果半導体装置の製造方法