JPH0456354U - - Google Patents

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Publication number
JPH0456354U
JPH0456354U JP9855190U JP9855190U JPH0456354U JP H0456354 U JPH0456354 U JP H0456354U JP 9855190 U JP9855190 U JP 9855190U JP 9855190 U JP9855190 U JP 9855190U JP H0456354 U JPH0456354 U JP H0456354U
Authority
JP
Japan
Prior art keywords
substrate
fixed
conductive
conductive part
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9855190U
Other languages
Japanese (ja)
Other versions
JP2528402Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990098551U priority Critical patent/JP2528402Y2/en
Publication of JPH0456354U publication Critical patent/JPH0456354U/ja
Application granted granted Critical
Publication of JP2528402Y2 publication Critical patent/JP2528402Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案による光モジユールの熱交換構
造の第１の実施例を示す側断面図、第２図は同光
モジユールの平面図、第３図は第２の実施例によ
る光モジユールの熱交換構造の側断面図である。 １……光モジユール、２，３……光半導体素子
、６……基板、６ｂ……表面、６ｃ……裏面、７
……貫通穴、９……伝導部、９ａ……一端、９ｂ
……他端、１０……放熱部、１３……ペルチエ素
子。 FIG. 1 is a side sectional view showing a first embodiment of the heat exchange structure of an optical module according to the present invention, FIG. 2 is a plan view of the same optical module, and FIG. FIG. 3 is a side sectional view of the replacement structure. 1... Optical module, 2, 3... Optical semiconductor element, 6... Substrate, 6b... Front surface, 6c... Back surface, 7
...Through hole, 9...Conduction part, 9a...One end, 9b
...Other end, 10... Heat dissipation section, 13... Peltier element.

Claims (1)

【実用新案登録請求の範囲】 １ 非導電性であるとともに、断熱性の素材で形
成され、かつ、貫通穴７が形成された基板６と、 前記基板の貫通穴に挿入固定されるとともに、
該基板の裏面６ｃに一端９ａが突出し、かつ他端
９ｂが該基板の表面６ｂに表出する伝導部９と、 該伝導部の一端に設けられる放熱部１０と、 前記伝導部の他端に固定される光半導体素子２
，３と、を具備し、前記光半導体素子が固定され
る前記基板を気密密封させたことを特徴とする光
モジユールの熱交換構造。 ２ 非導電性であるとともに、断熱性の素材で形
成され、かつ、貫通穴７が形成された基板６と、 前記基板の貫通穴に挿入固定されるとともに、
該基板の裏面６ｃに一端９ａが突出し、かつ他端
９ｂが該基板の表面６ｂに表出する伝導部９と、 該伝導部の一端に設けられる放熱部１０と、 前記伝導部の他端に固定されるペルチエ素子１
３と、 該ペルチエ素子上に固定される光半導体素子２
，３と、を具備し、前記光半導体素子が固定され
る前記基板を気密密封させたことを特徴とする光
モジユールの熱交換構造。[Claims for Utility Model Registration] 1. A substrate 6 made of a non-conductive and heat-insulating material and having a through hole 7 formed therein; and a substrate 6 inserted and fixed into the through hole of the substrate;
a conductive part 9 with one end 9a protruding from the back surface 6c of the substrate and the other end 9b exposed on the front surface 6b of the substrate; a heat radiation part 10 provided at one end of the conductive part; and a heat dissipation part 10 provided at the other end of the conductive part. Optical semiconductor element 2 to be fixed
, 3, wherein the substrate to which the optical semiconductor element is fixed is hermetically sealed. 2. A substrate 6 made of a non-conductive and heat insulating material and having a through hole 7 formed therein; and a substrate 6 which is inserted and fixed into the through hole of the substrate;
a conductive part 9 with one end 9a protruding from the back surface 6c of the substrate and the other end 9b exposed on the front surface 6b of the substrate; a heat radiation part 10 provided at one end of the conductive part; and a heat dissipation part 10 provided at the other end of the conductive part. Peltier element 1 to be fixed
3, and an optical semiconductor element 2 fixed on the Peltier element.
, 3, wherein the substrate to which the optical semiconductor element is fixed is hermetically sealed.
JP1990098551U 1990-09-21 1990-09-21 Heat exchange structure of optical module Expired - Fee Related JP2528402Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990098551U JP2528402Y2 (en) 1990-09-21 1990-09-21 Heat exchange structure of optical module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990098551U JP2528402Y2 (en) 1990-09-21 1990-09-21 Heat exchange structure of optical module

Publications (2)

Publication Number Publication Date
JPH0456354U true JPH0456354U (en) 1992-05-14
JP2528402Y2 JP2528402Y2 (en) 1997-03-12

Family

ID=31839819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990098551U Expired - Fee Related JP2528402Y2 (en) 1990-09-21 1990-09-21 Heat exchange structure of optical module

Country Status (1)

Country Link
JP (1) JP2528402Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123541A (en) * 2005-10-27 2007-05-17 Aisin Seiki Co Ltd Device with built-in functional part

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582663A (en) * 1978-12-20 1980-06-21 Canon Inc Recording medium liquid jet recording method by heat energy
JPS5916435A (en) * 1982-07-20 1984-01-27 Hitachi Ltd Optical transmission module
JPS625341A (en) * 1985-07-02 1987-01-12 オリンパス光学工業株式会社 Laser probe
JPS636864A (en) * 1986-06-26 1988-01-12 Mitsubishi Electric Corp Transistor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582663A (en) * 1978-12-20 1980-06-21 Canon Inc Recording medium liquid jet recording method by heat energy
JPS5916435A (en) * 1982-07-20 1984-01-27 Hitachi Ltd Optical transmission module
JPS625341A (en) * 1985-07-02 1987-01-12 オリンパス光学工業株式会社 Laser probe
JPS636864A (en) * 1986-06-26 1988-01-12 Mitsubishi Electric Corp Transistor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123541A (en) * 2005-10-27 2007-05-17 Aisin Seiki Co Ltd Device with built-in functional part

Also Published As

Publication number Publication date
JP2528402Y2 (en) 1997-03-12

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Legal Events

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LAPS Cancellation because of no payment of annual fees