JPH0455346B2 - - Google Patents
Info
- Publication number
- JPH0455346B2 JPH0455346B2 JP58234236A JP23423683A JPH0455346B2 JP H0455346 B2 JPH0455346 B2 JP H0455346B2 JP 58234236 A JP58234236 A JP 58234236A JP 23423683 A JP23423683 A JP 23423683A JP H0455346 B2 JPH0455346 B2 JP H0455346B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity region
- solid
- state imaging
- imaging device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58234236A JPS59130468A (ja) | 1983-12-14 | 1983-12-14 | 固体撮像装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58234236A JPS59130468A (ja) | 1983-12-14 | 1983-12-14 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59130468A JPS59130468A (ja) | 1984-07-27 |
| JPH0455346B2 true JPH0455346B2 (cs) | 1992-09-03 |
Family
ID=16967820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58234236A Granted JPS59130468A (ja) | 1983-12-14 | 1983-12-14 | 固体撮像装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59130468A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4539176B2 (ja) * | 2004-05-31 | 2010-09-08 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234674A (en) * | 1975-09-12 | 1977-03-16 | Toshiba Corp | Semiconductor device |
| JPS5847906B2 (ja) * | 1976-06-02 | 1983-10-25 | 株式会社日立製作所 | 固体撮像素子 |
| JPS5342567A (en) * | 1976-09-30 | 1978-04-18 | Oki Electric Ind Co Ltd | Semiconductor device and its production |
| JPS54145078U (cs) * | 1978-03-29 | 1979-10-08 | ||
| JPS6033340B2 (ja) * | 1979-02-19 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
| JPS5691462U (cs) * | 1979-12-17 | 1981-07-21 |
-
1983
- 1983-12-14 JP JP58234236A patent/JPS59130468A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59130468A (ja) | 1984-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4484388A (en) | Method for manufacturing semiconductor Bi-CMOS device | |
| US20090315137A1 (en) | Semiconductor devices, cmos image sensors, and methods of manufacturing same | |
| US6306679B1 (en) | Photodiode having transparent insulating film around gate islands above P-N junction | |
| JPS6043857A (ja) | 固体撮像装置とその製造方法 | |
| US4041519A (en) | Low transient effect switching device and method | |
| JPH11274461A (ja) | 固体撮像装置とその製造方法 | |
| US6403994B1 (en) | Solid-state imaging device and method of fabricating the same | |
| US4994888A (en) | Monolithic semiconductor device having CCD, bipolar and MOS structures | |
| EP0118568B1 (en) | Semiconductor image pickup device | |
| JPH09232556A (ja) | 半導体装置 | |
| JP3208307B2 (ja) | 光半導体装置 | |
| JPH0455346B2 (cs) | ||
| JPS6018957A (ja) | 固体撮像素子 | |
| JP4775486B2 (ja) | 固体撮像装置及びその製造方法 | |
| JPS6223156A (ja) | 固体撮像装置およびその製造方法 | |
| JPS63122267A (ja) | 光センサ | |
| JPH10189771A (ja) | 半導体装置及びその製造方法 | |
| US20070158712A1 (en) | Process for fabricating an integrated circuit comprising a photodiode, and corresponding integrated circuit | |
| KR0140634B1 (ko) | 고체촬상소자의 제조방법 | |
| JPH069236B2 (ja) | 固体撮像装置及びその製造方法 | |
| KR950010286B1 (ko) | 반도체 집적 회로의 장치 | |
| JP2792219B2 (ja) | フォトダイオードを備えた半導体装置及びその製造方法 | |
| JPH0650771B2 (ja) | 固体撮像装置及びその製造方法 | |
| JP3041362B2 (ja) | リニアイメージセンサ | |
| JPH0620121B2 (ja) | 半導体装置の製造方法 |