JPH0453230A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form the alignment marks constituted by forming slits in an interlayer film simply and easily having no trouble in the later electrode formation process by a method wherein the interlayer film having the slits constituting the alignment marks is formed on the surface of a layer whereon the buried-in material for flattening a semiconductor element is not selectively deposited. CONSTITUTION:A 5000Angstrom -thick interlayer film 3 comprising boron glass or phosphorus glass is formed on the whole surface of a semiconductor substrate 1 whereon a field oxide film 2 is previously formed. Next, the slits 3a to be the alignment marks are etched away out of the interlayer film 3 by the photolithography using a resist film. Next, a 3000Angstrom -thick tungsten layer 4 is selectively formed by sputtering process. In such a constitution, when the alignment marks comprising the interlayer film 3 and the slits 3a are formed on the surface of the field oxide film 2 and then the tungsten layer 4 are selectively formed, the tungsten layer 4 is not formed on the surface of the field oxide film 2 thereby enabling the alignment marks to be read out easily.

Description

[Detailed Description of the Invention] [(Already needed) Regarding a method for forming a pattern used for alignment in the manufacturing process of a semiconductor device, alignment marks formed by forming Swans 1 to 1 on an interlayer film are used to form an electrode in a later process. The purpose of the present invention is to provide a method for manufacturing a semiconductor device that can be formed simply and easily without causing any problems, and the method for manufacturing a semiconductor device is provided with alignment marks used for alignment in the manufacturing process of the semiconductor device. An interlayer film having a slit constituting an alignment mark is formed on the surface of a layer in which a buried material used for planarizing a semiconductor element is not selectively grown.

[Industrial application field]

The present invention also relates to a method of forming a pattern used for alignment in the manufacturing process of a conductor device.

2. Description of the Related Art In order to cope with miniaturization accompanying the recent increase in the degree of integration of semiconductor devices, planarization of stacked structures is required. For this purpose, the laminated structure is made flat by selectively growing tungsten or the like, but at the same time, this selective growth of tungsten is performed in the slits of the alignment marks, making the alignment marks difficult to read.

Under the above circumstances, there is a need for a semiconductor device and a method for manufacturing the same that can prevent alignment marks from becoming difficult to read due to planarization of a stacked structure.

(Prior Art) A conventional method for manufacturing a semiconductor device using tungsten as a filling material will be explained in detail in the order of steps with reference to FIG.

First, an interlayer film 23 is formed on the surface of the semiconductor substrate 21, a resist film is formed on the entire surface, and a slit 23a is formed in the interlayer film 23 using photolithography technology as shown in FIG. 3(a). An alignment mark is formed using the interlayer film 23 of the lever, and the resist film is removed.

Next, tungsten is selectively grown on the entire surface as shown in Figure 3 (b).
As shown in ), a tungsten layer 24 grows around the interlayer film 23 and between the sulin layers 23a formed in the interlayer film 23 .

When the tungsten layer 24 grows between the slits 23a of the interlayer film 23 in this way, it becomes difficult to use the interlayer film 23 as an alignment mark, so a resist film 25 is formed on the entire surface and a photolithography technique is used to form the resist film 25 on the entire surface. As shown in FIG. 3(C), an opening window 25a is formed on the surface of this slit 23a.

Next, as shown in FIG. 3(d), this resist film 2 is
Using mask 5 as a mask, the tungsten layer 24 between the interlayer films 23a and 23a is etched and removed, and the resist 25 is also removed.

Finally, as shown in FIG. 3(e), an interlayer insulating film 2G is formed on the entire surface.
is formed, and a window is opened using photolithography technology to form an aluminum electrode 27.

Tungsten is thus formed in the slit 23a of the glabellar membrane 23! If 24 is removed, the interlayer film 23 can be used as an alignment mark.

(Problems to be Solved by the Invention) In the conventional semiconductor device manufacturing method described above,
If a tungsten layer is grown on the slit, there is a problem that the alignment mark becomes difficult to read when using the interlayer film as an alignment mark. Many steps are required to use it,
In this treatment step, the surface of the tungsten layer used for planarization was altered by the resist, resulting in poor contact with the aluminum electrode formed on the surface.

In view of the above-mentioned circumstances, the present invention provides a method for manufacturing a semiconductor device in which alignment marks formed by forming slits in an interlayer film can be simply and easily formed without interfering with electrode formation in the subsequent process. The purpose is to provide

The inlay material is formed on the surface of a layer that does not grow selectively.

[Function] That is, in the present invention, the interlayer film having Surin I, which constitutes the alignment mark used for alignment in the manufacturing process of the semiconductor device, is placed on the surface of the layer where the embedding material used for planarizing the semiconductor element does not selectively grow. Because it forms,
Since the filling material does not selectively grow in the slits of this interlayer film, it is possible to use the interlayer film having this Surin l~ as a positioning mark without the need for a step of etching the filling material in Surin 1-. .

[Failure to solve the problem]

The method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device including an alignment mark used for alignment in the manufacturing process of a semiconductor device. EMBODIMENT OF THE INVENTION [Embodiment] One embodiment of the present invention will be described below in detail with reference to FIG. 1 and another embodiment of the present invention with reference to FIG. 2 in the order of steps.

An example not shown in FIG. 1 is an example in which an interlayer film 3 is formed on the surface of a field 1ζ oxide film 2.

First, as shown in FIG. 1(a), an interlayer film 3 made of boron glass or phosphor glass and having a thickness of 5,000 wafers is formed over the entire surface of a semiconductor substrate on which a field oxide film 2 has been formed.

Next, as shown in FIG. 1, a slit 3a serving as an alignment mark is formed in the interlayer film 3 by etching using a photolithography technique using a resist film.

Then, as shown in No. 111 AI (C), a film thickness of 3.5 mm is selectively formed by sputtering. ooo Form the tungsten layer 4.

In this way, when the alignment mark consisting of the interlayer film 3 and the slit 3a is formed on the surface of the field oxide film 2 and the tungsten layer 4 is selectively formed, the tungsten layer 4 is not formed on the surface of the field oxide film 2. It can be easily read as a positioning mark.

The embodiment shown in FIG. 2 is an embodiment in which the interlayer film 13 is formed on the surface of the lower interlayer film 12.

First, as shown in FIG. 2(a), a film 5 made of phosphorous glass or the like is formed on the surface of a semiconductor substrate 1 on which a lower interlayer film 2 made of boron glass or phosphorous glass is formed with a thickness of 5,000. ,000 interlayer film 13 is formed.

Next, as shown in FIG. 2(b), a line h1.3a serving as an alignment mark is formed on the interlayer film 13 by etching using a photolithography technique using a resist film.

Then, as shown in FIG. 2(C), a tungsten layer 14 having a thickness of 3,000 wafers is selectively formed by the sppack method.

When the alignment marks made of the interlayer film 13 and Surin Ii, 3a are formed on the surface of the lower interlayer film 12 in this way, and the tungsten layer 14 is selectively formed, the tungsten layer 14 is not formed on the surface of the lower interlayer film 12. Therefore, it can be easily read as a positioning mark.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, it is possible to prevent the embedded material used for planarizing the semiconductor device from being formed in the slint of the alignment mark, and the alignment mark can be identified very clearly. Therefore, it is possible to provide a method for manufacturing semiconductor devices that has the advantage of being able to manufacture semiconductor devices with high precision, and can be expected to have significant economic and reliability effects. Become.

4.14 is a tungsten layer, 12 is a lower interlayer membrane; Not shown.

Claims (1)

[Scope of Claims] A method for manufacturing a semiconductor device including an alignment mark used for alignment in a semiconductor device manufacturing process, wherein an interlayer film (3) having a slit (3a) constituting the alignment mark is attached to a semiconductor device. A method for manufacturing a semiconductor device, characterized in that a filling material used for planarizing a device is formed on the surface of a layer (2, 12) that is not selectively grown.