JPH0453229A - Manufacture device of semiconductor device - Google Patents

Abstract

PURPOSE:To stably produce plasma for the formation of excellent and stable CVD film without using microwaves by a method wherein a wafer is arranged in a processing chamber within the main chamber comprising a plasma chamber and the processing chamber connected to each other; a magnetic field periodically changing and specifying the frequency and the amplitude diverging toward the processing chamber is formed in the plasma chamber; simultaneously plasma gas is fed to feed a reaction gas to the processing chamber. CONSTITUTION:When N2 is fed from a gas feed pipe 3 to a plasma chamber 1a while SiH4 is fed from another gas feed pipe 4 to a processing chamber 1b furthermore, alternate current of 2.45GHz is supplied for coils 2 at the gas pressure of 5X10<-4>Torr in the chamber 1 and at the amplitude of 875G in the magnetic field B and the electric field E formed in the plasma chamber 1a so that the electrons may collide with molecules to produce plasma. Next, the plasma is shifted to the processing chamber 1b along the divergence direction to be reacted with the reaction gas SiH4 to deposit Si3N4 on a wafer 6.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention is based on the reaction between plasma and reactive gas.
The present invention relates to a CVD apparatus for forming a D film.

2. Description of the Related Art In the manufacturing process of semiconductor devices, there is a step of forming a CVD film using plasma on a wafer.

2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated and faster, and wafers have become larger in diameter, stable CVD film formation has been required.

[Conventional technology]

Conventionally, one method for forming a CVD film on a wafer is E.
Those using CR plasma have been put into practical use. This E
CR plasma is generated by a constant magnetic field created within the chamber by a coil placed around the chamber, and by microwaves that are injected into the chamber from a magnetron outside the chamber through a shield plate made of transparent quartz glass, etc. The plasma is generated from the ambient gas supplied into the chamber due to the interaction with the electric field, and the plasma reacts with the reactive gas to form a CVD film on the wafer.

[Problem to be solved by the invention]

However, in the above-mentioned CVD apparatus using plasma, it is necessary to match the impedance between the microwave and the chamber, and in particular, it is necessary to match the impedance between the microwave and the chamber.
Since it becomes difficult to match the impedance as the temperature decreases, it becomes difficult to control or stabilize the film pressure of the CVI film.

Furthermore, the CVD film also adheres to the shield plate into which microwaves are applied, and as the shield plate is used, the transmission efficiency of the microwaves passing through the shield plate decreases, resulting in a reduction in the growth rate of the CVD film.

An object of the present invention is to provide a CVD apparatus that can stably generate plasma and form a high-quality and stable CVD film without using microwaves.

[Means to solve the problem]

FIG. 1 is a diagram explaining the principle of the present invention. That is, it is a plasma CVD apparatus that generates plasma in a chamber 1 and reacts the plasma with a reaction gas to form a CVD film on a wafer 6''. ), the wafer 6 is placed in a processing chamber, and a magnetic field B that changes over time and diverges toward the processing chamber 11 is formed in the plasma chamber 1a. (7) Plasma surrounding gas g1 is supplied, and reaction gas g2 is supplied to the processing chamber 1b.

Further, the magnetic field B has a frequency of 2.45 GHz and an amplitude of 875 GHz.
It is called G.

[Effect]

In the plasma chamber la, an electric field is formed in a direction perpendicular to the magnetic field B due to the temporally changing magnetic field B, and due to the electric field, the electrons moving in a spiral collide with the molecules of the plasma field gas g1, and a plasma is generated. The plasma moves to the processing chamber 1b, reacts with the reaction gas g2, and forms C on the wafer 6.
A VD film is formed.

〔Example〕

Embodiments embodying this invention will be described below with reference to the drawings.

FIG. 2 shows a CVD apparatus, in which a chamber 1 includes a plasma chamber 1a and a processing chamber 1. I) consists of a plasma chamber 1
A coil 2 is arranged around a.

For example, the coil 2 has 2. An alternating current with a frequency of 45 GI-1z is applied, and a magnetic field B is formed in the plasma chamber 1a that changes over time at the same frequency and diverges toward the processing chamber 11]. Note that the current value of the alternating current is the magnetic field B
The amplitude of the magnetic field constituting the is set to be, for example, 875G. Furthermore, as shown in Figure 3, the magnetic field B changes over time due to Faraday's electromagnetic induction.
An electric field E is formed in a direction perpendicular to .

N2 as a surrounding gas is supplied to the plasma chamber 1a from the gas supply pipe 3, and plasma is generated from the N2 due to the interaction between the magnetic field B and the electric field E, and moves in the direction of divergence of the magnetic field B, that is, in the direction of the processing chamber 1b. do.

Processing chamber 11] is supplied with Si as a reaction gas from the gas supply pipe 4.
While H+ is supplied, a wafer holding device 5 is formed to be able to hold a wafer 6. An exhaust pipe 7 is connected to the processing chamber 11], and the pressure inside the processing chamber lb can be adjusted by an intake pump 8 connected to the exhaust pipe 7.
Moreover, the waste gas in the processing chamber Ib can be exhausted. Further, a load lock device 9 is disposed adjacent to the processing chamber lb, and is adapted to feed or eject the wafer 6 to or from the wafer holding device 5.

Now, in the CVD apparatus configured in this way, N2 is supplied from the gas supply pipe 3 into the plasma chamber la, and the gas supply pipe 4
SiH4 was supplied into the processing chamber Ib from 1 to 4, and the gas pressure in the chamber 1 was set to 5×10−'t.

When the alternating current is applied to the coil 2 in a state of rr, the magnetic field B and electric field E formed in the plasma chamber 1a cause electrons to spiral, and the electrons collide with N2 molecules to generate plasma. Then, the plasma is in the magnetic field B
moves to the processing chamber 1b along the divergence direction of the processing chamber lb.
Si3 reacts with the reactive gas SiH4 in the wafer 61.
N4 is deposited.

Therefore, since the electric field E is generated without using microwaves, plasma can be generated stably without being affected by the impedance of the chamber to microwaves, the degree of vacuum in the chamber, or the transmission efficiency of microwaves. Therefore, a high quality and stable CVD film can be formed.

〔Effect of the invention〕

As described in detail above, the present invention exhibits the excellent effect of stably generating plasma and forming a high-quality and stable CVD film without using microwaves.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of the principle of the present invention, FIG. 2 is a schematic diagram showing an embodiment of the present invention, and FIG. 3 is an explanatory diagram showing a magnetic field and an electric field. In the figure, 1 is a chamber, 1a is a plasma chamber, 11 is a processing chamber, 6 is a wafer, B is a magnetic field, gl is a surrounding gas, and g2 is a reaction gas. Figure 1: Detailed explanation of the present invention Figure 2: Part 1 of the present invention! i! Schematic diagram showing I Figure 3 Explanatory diagram showing magnetic field and electric field

Claims (1)

[Claims] 1. Generate plasma in the chamber (1), cause the plasma to react with a reactive gas, and create CV on the wafer (6).
A plasma CVD apparatus for forming a D film, the chamber (1) is composed of a plasma chamber (1a) and a processing chamber (1b) that are connected to each other, the wafer (6) is placed in the processing chamber, and the plasma chamber (1) is 1a) changes over time,
It is characterized by forming a magnetic field (B) that diverges toward the processing chamber (1b), supplying a plasma field gas (g1), and supplying a reaction gas (g2) to the processing chamber (1b). Manufacturing equipment for semiconductor devices. 2. The magnetic field (B) has a frequency of 2.45 GHz and an amplitude of 87
2. The semiconductor device manufacturing apparatus according to claim 1, wherein the semiconductor device manufacturing apparatus is 5G.