JPH0452612B2 - - Google Patents

Info

Publication number
JPH0452612B2
JPH0452612B2 JP58168592A JP16859283A JPH0452612B2 JP H0452612 B2 JPH0452612 B2 JP H0452612B2 JP 58168592 A JP58168592 A JP 58168592A JP 16859283 A JP16859283 A JP 16859283A JP H0452612 B2 JPH0452612 B2 JP H0452612B2
Authority
JP
Japan
Prior art keywords
electrode
plasma
cleaning
film
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58168592A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6059739A (ja
Inventor
Kanetake Takasaki
Kenji Koyama
Atsuhiro Tsukune
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16859283A priority Critical patent/JPS6059739A/ja
Publication of JPS6059739A publication Critical patent/JPS6059739A/ja
Publication of JPH0452612B2 publication Critical patent/JPH0452612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP16859283A 1983-09-13 1983-09-13 ドライクリ−ニング方法 Granted JPS6059739A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16859283A JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16859283A JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Publications (2)

Publication Number Publication Date
JPS6059739A JPS6059739A (ja) 1985-04-06
JPH0452612B2 true JPH0452612B2 (enrdf_load_stackoverflow) 1992-08-24

Family

ID=15870908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16859283A Granted JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Country Status (1)

Country Link
JP (1) JPS6059739A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341014A (ja) * 1986-08-06 1988-02-22 Sanyo Electric Co Ltd エピタキシヤル成長方法
JPS63253628A (ja) * 1987-04-10 1988-10-20 Hitachi Ltd プラズマ処理装置
JP2594967B2 (ja) * 1987-09-04 1997-03-26 株式会社日立製作所 プラズマ洗浄方法
JPH01136970A (ja) * 1987-11-20 1989-05-30 Matsushita Electric Ind Co Ltd プラズマｃｖｄ装置のクリーニング方法
JPH01180969A (ja) * 1988-01-13 1989-07-18 Matsushita Electric Ind Co Ltd スパッタリング方法
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP5284679B2 (ja) * 2008-04-28 2013-09-11 株式会社アルバック プラズマエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559723A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma etching method
JPS5719569A (en) * 1980-07-09 1982-02-01 Mitsubishi Electric Corp Cooler for refrigerator
JPS5944770B2 (ja) * 1980-07-25 1984-11-01 三菱電機株式会社 プラズマｃｖｄ用反応器の洗浄方法

Also Published As

Publication number Publication date
JPS6059739A (ja) 1985-04-06

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