JPH0451093B2 - - Google Patents

Info

Publication number
JPH0451093B2
JPH0451093B2 JP59241563A JP24156384A JPH0451093B2 JP H0451093 B2 JPH0451093 B2 JP H0451093B2 JP 59241563 A JP59241563 A JP 59241563A JP 24156384 A JP24156384 A JP 24156384A JP H0451093 B2 JPH0451093 B2 JP H0451093B2
Authority
JP
Japan
Prior art keywords
line
voltage line
standby
voltage
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59241563A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60120420A (ja
Inventor
Kurisu Deuitsuto Bii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS60120420A publication Critical patent/JPS60120420A/ja
Publication of JPH0451093B2 publication Critical patent/JPH0451093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Electronic Switches (AREA)
  • Power Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59241563A 1983-11-17 1984-11-15 電力用マルチプレクサ・スイツチ Granted JPS60120420A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/552,933 US4556804A (en) 1983-11-17 1983-11-17 Power multiplexer switch and method
US552933 1983-11-17

Publications (2)

Publication Number Publication Date
JPS60120420A JPS60120420A (ja) 1985-06-27
JPH0451093B2 true JPH0451093B2 (OSRAM) 1992-08-18

Family

ID=24207412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59241563A Granted JPS60120420A (ja) 1983-11-17 1984-11-15 電力用マルチプレクサ・スイツチ

Country Status (3)

Country Link
US (1) US4556804A (OSRAM)
JP (1) JPS60120420A (OSRAM)
KR (1) KR930001745B1 (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686388A (en) * 1985-03-12 1987-08-11 Pitney Bowes Inc. Integrated circuit substrate bias selection circuit
JP2628631B2 (ja) * 1986-04-09 1997-07-09 アポロ精工株式会社 ワイヤストリツパー装置及びこれを用いた自動配線装置
US5272393A (en) * 1987-11-24 1993-12-21 Hitachi, Ltd. Voltage converter of semiconductor device
US4937477A (en) * 1988-01-19 1990-06-26 Supertex, Inc. Integrated mos high-voltage level-translation circuit, structure and method
JP2600753B2 (ja) * 1988-02-03 1997-04-16 日本電気株式会社 入力回路
WO1991002408A1 (en) * 1989-07-28 1991-02-21 Dallas Semiconductor Corporation Line-powered integrated circuit transceiver
US5107149A (en) * 1990-12-18 1992-04-21 Synaptics, Inc. Linear, continuous-time, two quadrant multiplier
ATE134082T1 (de) * 1991-11-11 1996-02-15 Philips Electronics Nv Anordnung zum liefern elektrischer energie zu einer last
DE69417622T2 (de) * 1993-04-30 1999-09-09 Stmicroelectronics Spannungskomparator mit einer Summierung von auf dem Bandgap-Prinzip beruhenden Gleichströmen und diesen enthaltender Versorgungsspannungsschalter
US5406140A (en) * 1993-06-07 1995-04-11 National Semiconductor Corporation Voltage translation and overvoltage protection
JP2727921B2 (ja) * 1993-08-13 1998-03-18 日本電気株式会社 半導体集積回路装置
JP3566745B2 (ja) * 1994-01-25 2004-09-15 新日本製鐵株式会社 電圧変換装置
US5594381A (en) * 1994-04-29 1997-01-14 Maxim Integrated Products Reverse current prevention method and apparatus and reverse current guarded low dropout circuits
US5650672A (en) * 1995-09-25 1997-07-22 Xilinx Inc High-voltage power multiplexor
US6163044A (en) 1998-02-18 2000-12-19 Micron Technology, Inc. Method and circuit for lowering standby current in an integrated circuit
US6859074B2 (en) * 2001-01-09 2005-02-22 Broadcom Corporation I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off
US6847248B2 (en) * 2001-01-09 2005-01-25 Broadcom Corporation Sub-micron high input voltage tolerant input output (I/O) circuit which accommodates large power supply variations
SE520306C2 (sv) * 2001-01-31 2003-06-24 Ericsson Telefon Ab L M Regulator för en halvledarkrets
US7138836B2 (en) * 2001-12-03 2006-11-21 Broadcom Corporation Hot carrier injection suppression circuit
CN112100117A (zh) * 2019-06-18 2020-12-18 北京小米移动软件有限公司 电源复用电路、数据信号的切换方法及装置、电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936676A (en) * 1974-05-16 1976-02-03 Hitachi, Ltd. Multi-level voltage supply circuit for liquid crystal display device
JPS5227400A (en) * 1975-08-27 1977-03-01 Sharp Corp Power source device
JPS55149871A (en) * 1978-07-31 1980-11-21 Fujitsu Ltd Line voltage detector
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
US4463270A (en) * 1980-07-24 1984-07-31 Fairchild Camera & Instrument Corp. MOS Comparator circuit
US4384350A (en) * 1980-11-03 1983-05-17 Fairchild Camera & Instrument Corp. MOS Battery backup controller for microcomputer random access memory
EP0061513B1 (de) * 1981-04-01 1984-10-10 Deutsche ITT Industries GmbH Integrierte Auswahlschaltung in CMOS-Technik für vier Potentiale und deren Vereinfachung für drei Potentiale
US4513212A (en) * 1982-07-22 1985-04-23 Electronics Pty. Ltd. Automatic P-well clamping for CMOS integrated circuit
US4473758A (en) * 1983-02-07 1984-09-25 Motorola Inc. Substrate bias control circuit and method

Also Published As

Publication number Publication date
JPS60120420A (ja) 1985-06-27
KR930001745B1 (ko) 1993-03-12
US4556804A (en) 1985-12-03
KR850003645A (ko) 1985-06-20

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